Two types of nanoscale nonlinear memristor models and their series-parallel circuits

Dong Zhe-Kang; Duan Shu-Kai; Hu Xiao-Fang; Wang Li-Dan

doi:10.7498/aps.63.128502

Abstract

The memristor is a novel kind of electronic device with dynamic variable resistance that is dependent on the past history of the input current or voltage. As the fourth fundamental circuit element, the memristor captures a number of unique properties that have been found to possess attractive potentials in some promising fields such as nonvolatile memory, nonlinear circuit and system, and neuromorphic system. Additionally, compared with a circuit of single memristor, series-parallel circuit of memristors possesses more abundant device characteristics which arouses increasingly extensive interest from numerous researchers. In this paper, the mathematical closed-form charge-governed and flux-governed HP memristor nonlinear models are presented with constructive procedures. In particular, these models are more realistic by taking into account the nonlinear dopant drift effect nearby the terminals and the boundary conditions, and by adding a simple and effective window function. Furthermore, based on the internal parameters and threshold of the memristor respectively, the theoretical derivation and numerical analysis of the memristor-based series-parallel connection circuits have been made comprehensively. For obtaining the characteristics of the memristor-based combinational circuits intuitively, a graphical user interface is designed based on Matlab software, which is beneficial to displaying the properties of the memristive system clearly. The results in the present paper may provide theoretical reference and reliable experimental basis for the further development of the memristor-based combinational circuits.

Keywords:

Authors and contacts

1.
School of Electronic and Information Engineering, Southwest University, Chongqing 400715, China;
2.
Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Hong Kong, China
Funds: Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. [2013]47), the National Natural Science Foundation of China (Grant Nos. 61372139, 61101233, 60972155), the "Spring Sunshine Plan" Research Project of Ministry of Education of China (Grant No. z2011148), the Technology Foundation for Selected Overseas Chinese Scholars, Ministry of Personnel in China (Grant No. [2012]186), the University Excellent Talents Supporting Foundation of Chongqing, China (Grant No. [2011]65), the University Key Teacher Supporting Foundation of Chongqing, China (Grant No. [2011]65), and the Fundamental Research Fund for the Central Universities, China (Grant Nos. XDJK2014A009, XDJK2013B011).

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Cited By

[1]	Chua L O 1971 IEEE Trans. Circ. Syst. I 18 507
[2]	Tour J M, Tao H 2008 Nature 453 42
[3]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[4]	Williams R S 2008 IEEE Spectr. 45 28
[5]	Hu X F, Duan S K, Wang L D, Liao X F 2011 Sci. China Inf. Sci. 41 500
[6]	Li Y T, Long S B, Lu H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu L 2011 Chin. Phys. B 20 017305
[7]	Itoh M, Chua L O 2008 Int. J. Bifurcat. Chaos 18 3183
[8]	Duan S K, Hu X F, Wang L D, Li C D, Mazumder P 2012 Sci. China Inf. Sci. 42 754
[9]	Bao B C, Liu Z, Xu J P 2010 Chin. Phys. B 19 030510
[10]	Hu X F, Duan S K, Wang L D, Li C D 2011 J. Univ. Electron. Technol. China 40 642
[11]	Gao S Y, Duan S K, Wang L D 2012 Adv. Mater. Res. 9 204
[12]	Vontobel P O, Robinett W, Kuekes P J, Stewart D R, Williams R S, Straznicky J 2009 Nanotechnology 20 21
[13]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P, Lu W 2010 Nano Lett. 10 1297
[14]	Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S 2010 Nature 464 873
[15]	McDonald N R, Pino R E, Rozwood P J, Wysocki B T 2010 The 2010 International Joint Conference on Neural Networks Barcelona, Spain, July 18-23, 2010 p1
[16]	Wang X Y, Andrew L F, Herbert H C I, Victor S, Qi W G 2012 Chin. Phys. B 21 108501
[17]	Kvatinsky S, Friedman E G, Kolodny A, Weiser U C 2012 IEEE Trans. Circ. Syst. I 60 211
[18]	Mahvash M, Parker A C 2010 IEEE International Midwest Symposium on Circuits and Systems Seattle, USA, August 1-4, 2010 p989
[19]	Fang X D, Tang Y H, Wu J J 2012 Chin. Phys. B 21 098901
[20]	Batas D, Fiedler H 2011 IEEE Trans. Nanotechnol. 2 250
[21]	Wang L D, Drakakis E, Duan S K, He P F 2012 Int. J. Bifurcat. Chaos 22 1250205
[22]	Wang L D, Duan S K 2012 Abstr. Appl. Anal. 2012 726927
[23]	Yin W H, Wang L D, Duan S K 2013 Appl. Mech. Mater. 284 2485
[24]	Biolek Z, Biolek D, Biolková V 2009 Radio. Eng. 18 210
[25]	Kim H, Sah M, Yang C, Cho S, Chua L O 2012 IEEE Trans. Circ. Syst. 59 2422
[26]	Adhikari S P, Yang C, Kim H, Chua L O 2012 IEEE Trans. Neural Netw. Learning Syst. 23 1426
[27]	Kim H, Sah M, Yang C, Roska T, Chua L O 2012 Proc. IEEE 100 2061
[28]	Prodromakis T, Peh B P, Papavassiliou C, Toumazou C 2011 IEEE Trans. Electron. Dev. 58 3099

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Vol. 63, Issue 12 - 2014-06-20

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