Research progress of memristors and memristive mechanism

Liu Dong-Qing; Cheng Hai-Feng; Zhu Xuan; Wang Nan-Nan; Zhang Chao-Yang

doi:10.7498/aps.63.187301

Abstract

Memristors are the fourth basic circuit element in addition to the three classical elements: resistor, capacitor, and inductor, which have great application prospects in the fields of information storage, logic operations and neuromorphic networks. The recent development of memristors and memristive mechanism is reviewed, including connotations and characteristics of memristors, memristive mechanism, types of memristive mateirals, and application prospects of memristors. Finally, the key problems and development proposals are presented and a prospect on the development trend is also given.

Keywords:

Authors and contacts

1.
Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, National University of Defense Technology, Changsha 410073, China;
2.
State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 21203248) and the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.

References

[1]	Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3]	Zhu X, Tang Y H, Wu C Q, Wu J J, Yi X 2014 Chin. Phys. B 23 028501
[4]	Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 96401(in Chinese)[李智炜, 刘海军, 徐欣 2013 物理学报 62 96401]
[5]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[6]	Biolek D, Biolek Z, Biolkova V 2011 Electron. Lett. 47 1385
[7]	Adhikari S P, Sah M P, Hyongsuk K, Chua L O 2013 IEEE Trans. Circuits Syst. Regul. Pap. 60 3008
[8]	Pershin Y V, Ventra M D 2011 Adv. Phys. 60 145
[9]	Chua L O, Sung Mo K 1976 Proc. IEEE 64 209
[10]	Chua L 2011 Appl. Phys. A: Mater. 102 765
[11]	Prodromakis T, Toumazou C, Chua L 2012 Nat. Mater. 11 478
[12]	Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306(in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]
[13]	Waser R, Aono M 2007 Nat. Mater. 6 833
[14]	Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13
[15]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[16]	Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
[17]	Kamiya K, Young Y M, Park S G, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K 2012 Appl. Phys. Lett. 100 073502
[18]	Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671
[19]	Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y 2008 Appl. Phys. Lett. 93 042106
[20]	Tian H, Chen H Y, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren T L, Zhang Y, Wong H S 2013 Nano Lett. 13 651
[21]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[22]	Gopalan C, Ma Y, Gallo T, Wang J, Runnion E, Saenz J, Koushan F, Blanchard P, Hollmer S 2011 Solid-State Electron. 58 54
[23]	Cuello G 2010 Sci. School 15 24
[24]	Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252
[25]	Hirose Y, Hirose H 1976 J. Appl. Phys. 47 2767
[26]	West W C 1998 J. Electrochem. Soc. 145 2971
[27]	Lin W P, Liu S J, Gong T, Zhao Q, Huang W 2014 Adv. Mater. 26 570
[28]	Zhang B 2013 Ph. D. Dissertation (Shanghai: East China University of Science and Technology) (in Chinese)[张斌 2013 博士学位论文 (上海: 华东理工大学)]
[29]	Celinska J, Mcwilliams C, Paz De Araujo C, Xue K H 2011 J. Appl. Phys. 109 091603
[30]	Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
[31]	Ha S D, Aydogdu G H, Ramanathan S 2011 Appl. Phys. Lett. 98 012105
[32]	Xue K H, Paz de Araujo C A, Celinska J, Mcwilliams C 2011 J. Appl. Phys. 109 091602
[33]	Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[34]	Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, Roditchev D 2013 Nano Lett. 13 3648
[35]	Wong H S P, Raoux S, Sangbum K, Jiale L, Reifenberg J P, Rajendran B, Asheghi M, Goodson K E 2010 Proc. IEEE 98 2201
[36]	Ielmini D, Bruchhaus R, Waser R 2011 Phase Transitions 84 570
[37]	Yun J B, Kim S, Seo S, Lee M J, Kim D C, Ahn S E, Park Y, Kim J, Shin H 2007 Physica Status Solidi RRL 1 280
[38]	Inoue I, Yasuda S, Akinaga H, Takagi H 2008 Phys. Rev. B 77 035105
[39]	Shima H, Takano F, Akinaga H, Tamai Y, Inoue I H, Takagi H 2007 Appl. Phys. Lett. 91 012901
[40]	Hickmott T W 1962 J. Appl. Phys. 33 2669
[41]	Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951
[42]	Prakash A, Jana D, Maikap S 2013 Nanoscale Res. Lett. 8 418
[43]	Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M, Sune J 2013 Sci. Rep. 3 2929
[44]	Choi B J, Torrezan A C, Norris K J, Miao F, Strachan J P, Zhang M X, Ohlberg D A, Kobayashi N P, Yang J J, Williams R S 2013 Nano Lett. 13 3213
[45]	Muenstermann R, Menke T, Dittmann R, Waser R 2010 Adv. Mater. 22 4819
[46]	Yan Z, Guo Y, Zhang G, Liu J M 2011 Adv. Mater. 23 1351
[47]	Liu D, Wang N, Wang G, Shao Z, Zhu X, Zhang C, Cheng H 2013 Appl. Phys. Lett. 102 134105
[48]	Liu D, Cheng H, Zhu X, Wang G, Wang N 2013 ACS Appl. Mater. Interfaces 5 11258
[49]	Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y 2013 IEEE Electron Device Lett. 34 1506
[50]	Kozicki M N, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M 2005 Proceedings of the Non-Volatile Memory Technology Symposium Dallas, United States, November 7-10, 2005 p83
[51]	Morales-Masis M, Molen S J V D, Fu W T, Hesselberth M B, Ruitenbeek J M V 2009 Nanotechnology 20 095710
[52]	Nayak A, Tsuruoka T, Terabe K, Hasegawa T, Aono M 2011 Nanotechnology 22 235201
[53]	Liang X F, Chen Y, Shi L, Lin J, Yin J, Liu Z G 2007 J. Phys. D: Appl. Phys. 40 4767
[54]	Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508
[55]	Soni R, Meuffels P, Kohlstedt H, Kugeler C, Waser R 2009 Appl. Phys. Lett. 94 123503
[56]	Choi S J, Kim K H, Park G S, Bae H J, Yang W Y, Cho S 2011 IEEE Electron Device Lett. 32 375
[57]	Park Y S, Lee S Y, Yoon S M, Jung S W, Yu B G, Lee S J, Yoon S G 2007 Appl. Phys. Lett. 91 162107
[58]	Pandian R, Kooi B J, Palasantzas G, De Hosson J T M, Pauza A 2007 Appl. Phys. Lett. 91 152103
[59]	Guo X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513
[60]	Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Devices 54 2762
[61]	Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M 2010 Nanotechnology 21 045202
[62]	Sakamoto T, Lister K, Banno N, Hasegawa T, Terabe K, Aono M 2007 Appl. Phys. Lett. 91 092110
[63]	Lee W, Park J, Son M, Lee J, Jung S, Kim S, Park S, Shin J, Hwang H 2011 IEEE Electron Device Lett. 32 680
[64]	Zhuge F, Dai W, He C L, Wang A Y, Liu Y W, Li M, Wu Y H, Cui P, Li R W 2010 Appl. Phys. Lett. 96 163505
[65]	Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47
[66]	Potember R S, Poehler T O, Cowan D O 1979 Appl. Phys. Lett. 34 405
[67]	Yang Y, Ouyang J, Ma L, Tseng R J H, Chu C W 2006 Adv. Funct. Mater. 16 1001
[68]	Chu C W, Ouyang J, Tseng J H, Yang Y 2005 Adv. Mater. 17 1440
[69]	Kang N G, Cho B, Kang B G, Song S, Lee T, Lee J S 2012 Adv. Mater. 24 385
[70]	Lai Y S, Tu C H, Kwong D L, Chen J S 2006 IEEE Electron Device Lett. 27 451
[71]	Song Y, Tan Y P, Teo E Y H, Zhu C, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508
[72]	Majee S K, Majumdar H S, Bolognesi A, Pal A J 2006 Synth. Met. 156 828
[73]	Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[74]	Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870
[75]	Chai Y, Wu Y, Takei K, Chen H Y, Yu S, Chan P C H, Javey A, Wong H S P 2011 IEEE Trans. Electron Devices 58 3933
[76]	Johnson S L, Sundararajan A, Hunley D P, Strachan D R 2010 Nanotechnology 21 125204
[77]	He C, Li J, Wu X, Chen P, Zhao J, Yin K, Cheng M, Yang W, Xie G, Wang D, Liu D, Yang R, Shi D, Li Z, Sun L, Zhang G 2013 Adv. Mater. 25 5593
[78]	Hwang S K, Lee J M, Kim S, Park J S, Park H I, Ahn C W, Lee K J, Lee T, Kim S O 2012 Nano Lett. 12 2217
[79]	Siebeneicher P, Kleemann H, Leo K, Lsem B 2012 Appl. Phys. Lett. 100 193301
[80]	Chen Y, Zhang B, Liu G, Zhuang X, Kang E T 2012 Chem. Soc. Rev. 41 4688
[81]	Kim H D, An H M, Lee E B, Kim T G 2011 IEEE Trans. Electron Devices 58 3566
[82]	Kim H D, An H M, Kim T G 2012 Microelectron. Eng. 98 351
[83]	Zhu W, Zhang X, Fu X, Zhou Y, Luo S, Wu X 2012 Phys. Status Solidi A 209 1996
[84]	Choi B, Yang J J, Zhang M X, Norris K, Ohlberg D A, Kobayashi N, Medeiros-Ribeiro G, Williams R S 2012 Appl. Phys. A: Mater. 109 1
[85]	Liu T Y, Yan T H, Scheuerlein R, Chen Y, Lee J K, Balakrishnan G, Yee G, Zhang H, Yap A, Ouyang J, Sasaki T, Al-Shamma A, Chen C, Gupta M, Hilton G, Kathuria A, Lai V, Matsumoto M, Nigam A, Pai A, Pakhale J, Siau C H, Wu X X, Yin Y, Nagel N, Tanaka Y, Higashitani M, Minvielle T, Gorla C, Tsukamoto T, Yamaguchi T, Okajima M, Okamura T, Takase S, Inoue H, Fasoli L 2014 IEEE J. Solid-State Circuits 49 140
[86]	Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S 2010 Nature 464 873
[87]	Zhu X, Yang X J, Wu C Q, Xiao N, Wu J J, Yi X 2013 IEEE Trans. Circuits Syst. Express Briefs 60 682
[88]	Fang X D 2013 Ph. D. Dissertation (Changsha: National University of Defense Technology) (in Chinese)[方旭东 2013 博士学位论文 (长沙: 国防科学技术大学)]
[89]	Hyongsuk K, Sah M P, Changju Y, Roska T, Chua L O 2012 Proc. IEEE 100 2061
[90]	Gao B 2013 Ph. D. Dissertation (Beijing: Peking University) (in Chinese)[高滨 2013 博士学位论文(北京: 北京大学)]
[91]	Li H T 2011 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)[李海涛 2011 博士学位论文(南京: 南京大学)]
[92]	Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, Miao X 2013 Sci. Rep. 3 1619
[93]	L H B, Wan H J, Tang T A 2010 IEEE Electron Device Lett. 31 978
[94]	Gao B, Zhang H W, Yu S, Sun B, Liu L F, Liu X Y, Wang Y, Han R Q, Kang J F, Yu B, Wang Y Y 2009 Proceedings of the Symposium on VLSI Technology Hsinchu, China, April 27-29, 2009 p30
[95]	Chang W Y, Cheng K J, Tsai J M, Chen H J, Chen F, Tsai M J, Wu T B 2009 Appl. Phys. Lett. 95 042104
[96]	Zhuge F, Peng S, He C, Zhu X, Chen X, Liu Y, Li R W 2011 Nanotechnology 22 275204
[97]	Liu C Y, Hsu J M 2010 Microelectron. Eng. 87 2504

Cited By

[1]	Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[2]	Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[3]	Zhu X, Tang Y H, Wu C Q, Wu J J, Yi X 2014 Chin. Phys. B 23 028501
[4]	Li Z W, Liu H J, Xu X 2013 Acta Phys. Sin. 62 96401(in Chinese)[李智炜, 刘海军, 徐欣 2013 物理学报 62 96401]
[5]	Li Y T, Long S B, L H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S, Liu M 2011 Chin. Phys. B 20 017305
[6]	Biolek D, Biolek Z, Biolkova V 2011 Electron. Lett. 47 1385
[7]	Adhikari S P, Sah M P, Hyongsuk K, Chua L O 2013 IEEE Trans. Circuits Syst. Regul. Pap. 60 3008
[8]	Pershin Y V, Ventra M D 2011 Adv. Phys. 60 145
[9]	Chua L O, Sung Mo K 1976 Proc. IEEE 64 209
[10]	Chua L 2011 Appl. Phys. A: Mater. 102 765
[11]	Prodromakis T, Toumazou C, Chua L 2012 Nat. Mater. 11 478
[12]	Jia L N, Huang A P, Zheng X H, Xiao Z S, Wang M 2012 Acta Phys. Sin. 61 217306(in Chinese)[贾林楠, 黄安平, 郑晓虎, 肖志松, 王玫 2012 物理学报 61 217306]
[13]	Waser R, Aono M 2007 Nat. Mater. 6 833
[14]	Yang J J, Strukov D B, Stewart D R 2013 Nat. Nanotechnol. 8 13
[15]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[16]	Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 957
[17]	Kamiya K, Young Y M, Park S G, Magyari-Köpe B, Nishi Y, Niwa M, Shiraishi K 2012 Appl. Phys. Lett. 100 073502
[18]	Chen J Y, Hsin C L, Huang C W, Chiu C H, Huang Y T, Lin S J, Wu W W, Chen L J 2013 Nano Lett. 13 3671
[19]	Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y 2008 Appl. Phys. Lett. 93 042106
[20]	Tian H, Chen H Y, Gao B, Yu S, Liang J, Yang Y, Xie D, Kang J, Ren T L, Zhang Y, Wong H S 2013 Nano Lett. 13 651
[21]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[22]	Gopalan C, Ma Y, Gallo T, Wang J, Runnion E, Saenz J, Koushan F, Blanchard P, Hollmer S 2011 Solid-State Electron. 58 54
[23]	Cuello G 2010 Sci. School 15 24
[24]	Hasegawa T, Terabe K, Tsuruoka T, Aono M 2012 Adv. Mater. 24 252
[25]	Hirose Y, Hirose H 1976 J. Appl. Phys. 47 2767
[26]	West W C 1998 J. Electrochem. Soc. 145 2971
[27]	Lin W P, Liu S J, Gong T, Zhao Q, Huang W 2014 Adv. Mater. 26 570
[28]	Zhang B 2013 Ph. D. Dissertation (Shanghai: East China University of Science and Technology) (in Chinese)[张斌 2013 博士学位论文 (上海: 华东理工大学)]
[29]	Celinska J, Mcwilliams C, Paz De Araujo C, Xue K H 2011 J. Appl. Phys. 109 091603
[30]	Zhou Y, Chen X, Ko C, Yang Z, Mouli C, Ramanathan S 2013 IEEE Electron Device Lett. 34 220
[31]	Ha S D, Aydogdu G H, Ramanathan S 2011 Appl. Phys. Lett. 98 012105
[32]	Xue K H, Paz de Araujo C A, Celinska J, Mcwilliams C 2011 J. Appl. Phys. 109 091602
[33]	Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[34]	Dubost V, Cren T, Vaju C, Cario L, Corraze B, Janod E, Debontridder F, Roditchev D 2013 Nano Lett. 13 3648
[35]	Wong H S P, Raoux S, Sangbum K, Jiale L, Reifenberg J P, Rajendran B, Asheghi M, Goodson K E 2010 Proc. IEEE 98 2201
[36]	Ielmini D, Bruchhaus R, Waser R 2011 Phase Transitions 84 570
[37]	Yun J B, Kim S, Seo S, Lee M J, Kim D C, Ahn S E, Park Y, Kim J, Shin H 2007 Physica Status Solidi RRL 1 280
[38]	Inoue I, Yasuda S, Akinaga H, Takagi H 2008 Phys. Rev. B 77 035105
[39]	Shima H, Takano F, Akinaga H, Tamai Y, Inoue I H, Takagi H 2007 Appl. Phys. Lett. 91 012901
[40]	Hickmott T W 1962 J. Appl. Phys. 33 2669
[41]	Wong H S P, Lee H Y, Yu S, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T, Tsai M J 2012 Proc. IEEE 100 1951
[42]	Prakash A, Jana D, Maikap S 2013 Nanoscale Res. Lett. 8 418
[43]	Long S, Perniola L, Cagli C, Buckley J, Lian X, Miranda E, Pan F, Liu M, Sune J 2013 Sci. Rep. 3 2929
[44]	Choi B J, Torrezan A C, Norris K J, Miao F, Strachan J P, Zhang M X, Ohlberg D A, Kobayashi N P, Yang J J, Williams R S 2013 Nano Lett. 13 3213
[45]	Muenstermann R, Menke T, Dittmann R, Waser R 2010 Adv. Mater. 22 4819
[46]	Yan Z, Guo Y, Zhang G, Liu J M 2011 Adv. Mater. 23 1351
[47]	Liu D, Wang N, Wang G, Shao Z, Zhu X, Zhang C, Cheng H 2013 Appl. Phys. Lett. 102 134105
[48]	Liu D, Cheng H, Zhu X, Wang G, Wang N 2013 ACS Appl. Mater. Interfaces 5 11258
[49]	Liu D Q, Cheng H F, Wang G, Zhu X, Shao Z Z, Wang N N, Zhang C Y 2013 IEEE Electron Device Lett. 34 1506
[50]	Kozicki M N, Balakrishnan M, Gopalan C, Ratnakumar C, Mitkova M 2005 Proceedings of the Non-Volatile Memory Technology Symposium Dallas, United States, November 7-10, 2005 p83
[51]	Morales-Masis M, Molen S J V D, Fu W T, Hesselberth M B, Ruitenbeek J M V 2009 Nanotechnology 20 095710
[52]	Nayak A, Tsuruoka T, Terabe K, Hasegawa T, Aono M 2011 Nanotechnology 22 235201
[53]	Liang X F, Chen Y, Shi L, Lin J, Yin J, Liu Z G 2007 J. Phys. D: Appl. Phys. 40 4767
[54]	Liang X F, Chen Y, Chen L, Yin J, Liu Z G 2007 Appl. Phys. Lett. 90 022508
[55]	Soni R, Meuffels P, Kohlstedt H, Kugeler C, Waser R 2009 Appl. Phys. Lett. 94 123503
[56]	Choi S J, Kim K H, Park G S, Bae H J, Yang W Y, Cho S 2011 IEEE Electron Device Lett. 32 375
[57]	Park Y S, Lee S Y, Yoon S M, Jung S W, Yu B G, Lee S J, Yoon S G 2007 Appl. Phys. Lett. 91 162107
[58]	Pandian R, Kooi B J, Palasantzas G, De Hosson J T M, Pauza A 2007 Appl. Phys. Lett. 91 152103
[59]	Guo X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513
[60]	Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Devices 54 2762
[61]	Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M 2010 Nanotechnology 21 045202
[62]	Sakamoto T, Lister K, Banno N, Hasegawa T, Terabe K, Aono M 2007 Appl. Phys. Lett. 91 092110
[63]	Lee W, Park J, Son M, Lee J, Jung S, Kim S, Park S, Shin J, Hwang H 2011 IEEE Electron Device Lett. 32 680
[64]	Zhuge F, Dai W, He C L, Wang A Y, Liu Y W, Li M, Wu Y H, Cui P, Li R W 2010 Appl. Phys. Lett. 96 163505
[65]	Terabe K, Hasegawa T, Nakayama T, Aono M 2005 Nature 433 47
[66]	Potember R S, Poehler T O, Cowan D O 1979 Appl. Phys. Lett. 34 405
[67]	Yang Y, Ouyang J, Ma L, Tseng R J H, Chu C W 2006 Adv. Funct. Mater. 16 1001
[68]	Chu C W, Ouyang J, Tseng J H, Yang Y 2005 Adv. Mater. 17 1440
[69]	Kang N G, Cho B, Kang B G, Song S, Lee T, Lee J S 2012 Adv. Mater. 24 385
[70]	Lai Y S, Tu C H, Kwong D L, Chen J S 2006 IEEE Electron Device Lett. 27 451
[71]	Song Y, Tan Y P, Teo E Y H, Zhu C, Chan D S H, Ling Q D, Neoh K G, Kang E T 2006 J. Appl. Phys. 100 084508
[72]	Majee S K, Majumdar H S, Bolognesi A, Pal A J 2006 Synth. Met. 156 828
[73]	Bozano L D, Kean B W, Beinhoff M, Carter K R, Rice P M, Scott J C 2005 Adv. Funct. Mater. 15 1933
[74]	Jo S H, Kim K H, Lu W 2009 Nano Lett. 9 870
[75]	Chai Y, Wu Y, Takei K, Chen H Y, Yu S, Chan P C H, Javey A, Wong H S P 2011 IEEE Trans. Electron Devices 58 3933
[76]	Johnson S L, Sundararajan A, Hunley D P, Strachan D R 2010 Nanotechnology 21 125204
[77]	He C, Li J, Wu X, Chen P, Zhao J, Yin K, Cheng M, Yang W, Xie G, Wang D, Liu D, Yang R, Shi D, Li Z, Sun L, Zhang G 2013 Adv. Mater. 25 5593
[78]	Hwang S K, Lee J M, Kim S, Park J S, Park H I, Ahn C W, Lee K J, Lee T, Kim S O 2012 Nano Lett. 12 2217
[79]	Siebeneicher P, Kleemann H, Leo K, Lsem B 2012 Appl. Phys. Lett. 100 193301
[80]	Chen Y, Zhang B, Liu G, Zhuang X, Kang E T 2012 Chem. Soc. Rev. 41 4688
[81]	Kim H D, An H M, Lee E B, Kim T G 2011 IEEE Trans. Electron Devices 58 3566
[82]	Kim H D, An H M, Kim T G 2012 Microelectron. Eng. 98 351
[83]	Zhu W, Zhang X, Fu X, Zhou Y, Luo S, Wu X 2012 Phys. Status Solidi A 209 1996
[84]	Choi B, Yang J J, Zhang M X, Norris K, Ohlberg D A, Kobayashi N, Medeiros-Ribeiro G, Williams R S 2012 Appl. Phys. A: Mater. 109 1
[85]	Liu T Y, Yan T H, Scheuerlein R, Chen Y, Lee J K, Balakrishnan G, Yee G, Zhang H, Yap A, Ouyang J, Sasaki T, Al-Shamma A, Chen C, Gupta M, Hilton G, Kathuria A, Lai V, Matsumoto M, Nigam A, Pai A, Pakhale J, Siau C H, Wu X X, Yin Y, Nagel N, Tanaka Y, Higashitani M, Minvielle T, Gorla C, Tsukamoto T, Yamaguchi T, Okajima M, Okamura T, Takase S, Inoue H, Fasoli L 2014 IEEE J. Solid-State Circuits 49 140
[86]	Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R, Williams R S 2010 Nature 464 873
[87]	Zhu X, Yang X J, Wu C Q, Xiao N, Wu J J, Yi X 2013 IEEE Trans. Circuits Syst. Express Briefs 60 682
[88]	Fang X D 2013 Ph. D. Dissertation (Changsha: National University of Defense Technology) (in Chinese)[方旭东 2013 博士学位论文 (长沙: 国防科学技术大学)]
[89]	Hyongsuk K, Sah M P, Changju Y, Roska T, Chua L O 2012 Proc. IEEE 100 2061
[90]	Gao B 2013 Ph. D. Dissertation (Beijing: Peking University) (in Chinese)[高滨 2013 博士学位论文(北京: 北京大学)]
[91]	Li H T 2011 Ph. D. Dissertation (Nanjing: Nanjing University) (in Chinese)[李海涛 2011 博士学位论文(南京: 南京大学)]
[92]	Li Y, Zhong Y, Xu L, Zhang J, Xu X, Sun H, Miao X 2013 Sci. Rep. 3 1619
[93]	L H B, Wan H J, Tang T A 2010 IEEE Electron Device Lett. 31 978
[94]	Gao B, Zhang H W, Yu S, Sun B, Liu L F, Liu X Y, Wang Y, Han R Q, Kang J F, Yu B, Wang Y Y 2009 Proceedings of the Symposium on VLSI Technology Hsinchu, China, April 27-29, 2009 p30
[95]	Chang W Y, Cheng K J, Tsai J M, Chen H J, Chen F, Tsai M J, Wu T B 2009 Appl. Phys. Lett. 95 042104
[96]	Zhuge F, Peng S, He C, Zhu X, Chen X, Liu Y, Li R W 2011 Nanotechnology 22 275204
[97]	Liu C Y, Hsu J M 2010 Microelectron. Eng. 87 2504

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Vol. 63, Issue 18 - 2014-09-20

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