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Zinc oxide (ZnO) is a wide direct band gap (3.37 eV) II-VI semiconductor material with a wide range of applications in light emitting devices, solar cells, field emission devices, gas sensors, etc. Over the past decades, metal oxide semiconductors have been investigated extensively for sensing various types of vapors and toxic gases. Among the various metal oxides for gas sensing applications, ZnO is one of the potential materials for high response, stability and sensitivity to volatile organic gases. At present, the ZnO-based gas sensor has a relatively high operating temperature. However, the stability and lifetime of gas sensors operating under high temperature conditions with a long term will be greatly reduced. In addition, the power consumption of gas sensors is also significantly increased. Furthermore, there can exist the potential of explosion when gas sensors are used to detect the flammable gases at high temperature. Therefore, it is necessary to improve the sensing properties and reduce the operating temperature of gas sensors. In this paper, ultra-long, large-sized Sb doped ZnO microwires are successfully prepared by using chemical vapor deposition. The gas sensor is based on the principle of non-balance electric bridge, and a single Sb doped ZnO microwire is used as a bridge arm R4 of non-balance electric bridge to produce a gas sensor that can work at room temperature. The results show that the response-recovery curves of sensors at the acetone and ethanol concentrations of 20 ppm, 50 ppm, 100 ppm and 200 ppm (1 ppm = 10–6) are rectangular at room temperature, and have stable current values in air and measured gas, and the response value of the device gradually increases with gas concentration increasing. Furthermore, the detection of acetone and ethanol gas reveal that the device has better selectivity for acetone gas. The response of the gas sensor to 200 ppm acetone is about 243%, with response and recovery time of 0.2 s and 0.3 s, respectively. Compared with the traditional resistive gas sensor, this non-balanced electric bridge sensor has high response, fast response and recovery time. In addition, the sensing mechanism of the device is also studied.
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Keywords:
- chemical vapor deposition /
- Sb doped ZnO microwires /
- non-balance electric bridge /
- gas sensor
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图 1 气体传感器的结构示意图
Figure 1. Schematic image of gas sensor.
图 2 (a) Sb掺杂ZnO微米线阵列实物照片; (b)单根Sb掺杂ZnO微米线的SEM图
Figure 2. (a) Photograph of Sb doped ZnO microwire arrays; (b) SEM image of the single Sb doped ZnO microwire.
图 3 单根Sb掺杂ZnO微米线的EDS
Figure 3. EDS for the single Sb doped ZnO microwire.
图 4 室温下单根Sb掺杂ZnO微米线分别在空气和浓度为200 ppm丙酮及乙醇气体中的I-V特性曲线
Figure 4. The I-V characteristic curves of the single ZnO micronwire for air, acetone (200 ppm) and ethanol (200 ppm) at room temperature.
图 5 室温条件下传感器在不同浓度丙酮和乙醇气体中的响应和恢复曲线 (a)丙酮; (b)乙醇; (c), (d)室温下传感器对不同浓度丙酮及乙醇气体的响应度曲线
Figure 5. Response and recovery curves of the gas sensor to different concentrations of acetone (a) and (b) ethanol at room temperature; (c), (d) the response of the gas sensor to different concentrations of acetone and ethanol at room temperature.
图 6 室温下气体传感器对200 ppm被测气体的响应恢复曲线 (a)丙酮; (b)乙醇
Figure 6. Response and recovery curves of gas sensor to 200 ppm acetone (a) and ethanol (b) at room temperature.
图 7 两种气敏传感器室温下对200 ppm丙酮和乙醇气体的响应和恢复曲线 (a), (b)非平衡电桥式; (c), (d)传统电导式
Figure 7. Response and recovery curves of two gas sensors to 200 ppm acetone and ethanol gases at room temperature: (a), (b) Non-balance electric bridge type; (c), (d) conventional conductance type.
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[1] 李酽, 李娇, 陈丽丽, 连晓雪, 朱俊武 2018 物理学报 67 140701
Google Scholar
Li Y, Li J, Chen L L, Lian X X, Zhu J W 2018 Acta Phys. Sin. 67 140701
Google Scholar
[2] Yang X, Dong L, Shan C X, Sun J L, Zhang N, Wang S P, Jiang M M, Li B H, Xie X H, Shen D Z 2017 Adv. Mater. 29 1602832
Google Scholar
[3] 冯秋菊, 许瑞卓, 郭慧颖, 徐坤, 李荣, 陶鹏程, 梁红伟, 刘佳媛, 梅艺赢 2014 物理学报 63 168101
Google Scholar
Feng Q J, Xu R Z, Guo H Y, X K, Li R, Tao P C T, Liang H W, Liu J Y, Mei Y Y 2014 Acta Phys. Sin. 63 168101
Google Scholar
[4] Mourad S, Ghoul J E, Omri K, Khirouni K 2019 Chin. Phys. B 28 047701
Google Scholar
[5] 刘姿, 张恒, 吴昊, 刘昌 2019 物理学报 68 107301
Google Scholar
Liu Z, Zhang H, Wu H, Liu C 2019 Acta Phys. Sin. 68 107301
Google Scholar
[6] Wei A, Wang Z, Pan L H, Li W W, Xiong L, Dong X C, Huang W 2011 Chin. Phys. Lett. 28 080702
Google Scholar
[7] 胡杰, 邓霄, 桑胜波, 李朋伟, 李刚, 张文栋 2014 物理学报 63 207102
Google Scholar
Hu J, Deng X, Sang S B, Li P W, Li G, Zhang W D 2014 Acta Phys. Sin. 63 207102
Google Scholar
[8] Liang J, Yang R, Zhu K, Hu M 2018 J. Mater. Sci. Mater. Electron. 29 3780
Google Scholar
[9] Shao C, Chang Y, Long Y 2014 Sens. Actuators B 204 666
Google Scholar
[10] Kim H J, Lee J H 2014 Sens. Actuators B 192 607
Google Scholar
[11] Feng Q J, Shi X C, Xing Y, Li T T, Li F, Pan D Z, Liang H W 2018 J. Alloys Compd. 739 298
Google Scholar
[12] Gu F B, You D, Wang Z H, Han D M, Guo G S 2014 Sens. Actuators B 204 342
Google Scholar
[13] Zhang P S, Pan G F, Zhang B Q, Zhen J L, Sun Y C 2014 Mater. Res. 17 817
Google Scholar
[14] Tian S, Yang F, Zeng D, Xie C 2012 J. Phys. Chem. C 116 10586
Google Scholar
[15] Li X W, Wang C, Guo H, Sun P, Liu F, Liang X, Lu G 2015 ACS Appl. Mater. Interfaces 7 17811
Google Scholar
[16] Alexiadou M, Kandyla M, Mousdis G, M. Kompitsas 2017 Appl. Phys. A 123 262
[17] Hsueh T J, Hsu C L, Chang S J, Chen I C 2007 Sens. Actuators B 126 473
Google Scholar
[18] Wang T, Xu S, Hu N, Hu J, Huang D, Jiang W, Wang S, Wu S, Zhang Y, Yang Z 2018 Sens. Actuators B 255 1006
Google Scholar
[19] Moreau W R 1989 Eur. J. Phys. 10 286
Google Scholar
[20] Castro H F, Correia V, Pereira N, Costab P, Oliveiraa J, Lanceros-Méndez S L 2018 Addit. Manuf. 20 119
Google Scholar
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