Research advances in spintronic terahertz sources

Xu Yong; Zhang Fan; Zhang Xiao-Qiang; Du Yin-Chang; Zhao Hai-Hui; Nie Tian-Xiao; Wu Xiao-Jun; Zhao Wei-Sheng

doi:10.7498/aps.69.20200623

Abstract

The terahertz frequency band is located between infrared and microwave in the electromagnetic spectrum. The interesting properties such as broadband, low energy, high permeability, fingerprint, etc. make terahertz wave important for applications in the fields of aerospace, wireless communications, security, materials science, biomedicine, etc. The development and application of terahertz science and technology are largely limited by the terahertz sources, therefore it is crucial to develop new terahertz radiation sources. Recently, it was shown that terahertz spintronic not only provides the possibility of physically controlling the femtosecond spin current, but also expects to be the next-generation ultra-wideband, low-cost, high-efficiency terahertz sources. In this paper we systematically review the historical development, experimental devices, emission mechanisms, material selections, and future prospects of the spintronic terahertz sources. We present the research advances in the physical mechanisms of ultrafast spin current induced by femtosecond laser, the spin charge conversion at ferromagnetic and non-magnetic interfaces, and the terahertz emission triggered by ultrafast pulses. This review also introduces spintronic terahertz sources based on heavy metals, topological insulators, Rashba interfaces, and semiconductor systems.

Keywords:

terahertz source /
ferromagnetic/non-magnetic heterostructure /
ultrafast demagnetization /
spin-charge conversion

Authors and contacts

1.
Beijing Advanced Innovation Certer for Big Data and Brain Computing, School of Microelectronics, Beihang University, Beijing 100191, China
2.
Hefei Innovation Research Institute, Beihang University, Hefei 230012, China
3.
School of Electronic and Information Engineering, Beihang University, Beijing 100191, China

Corresponding author: Wu Xiao-Jun, xiaojunwu@buaa.edu.cn ; Zhao Wei-Sheng, weisheng.zhao@buaa.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11904016, 61905007, 61627813), the Beihang Hefei Innovation Research Institute Project, China (Grant Nos. BHKX-19-01, BHKX-19-02), and the Beijing Natural Science Foundation, China (Grant No. 4194083)

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Cited By

图 1 透射式太赫兹发射谱仪的光路示意图

Figure 1. Schematic diagram of experimental setup of spintronic terahertz emission spectroscopy in transmission geometry.

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图 2 铁磁/非磁异质结太赫兹发射　(a)时域波形; (b)频谱

Figure 2. The time-domain waveform and frequency-domain spectrum of the terahertz wave emitted by FM/NM heterostructures:　(a) The time-domain waveform; (b) frequency-domain spectrum.

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图 3 面内磁化的铁磁薄膜FM被飞秒激光激发, 自旋极化的非平衡热电子注入非磁层. 根据逆自旋霍尔效应, 多数电子和少数电子在不同方向偏转, 从而将纵向自旋流转换为横向的电荷流, 产生了太赫兹发射

Figure 3. The in-plane magnetized ferromagnetic layer is excited by the femtosecond laser, which induces the injection of non-equilibrium spin-polarized hot electrons into the non-magnetic layer. The spin-majority electrons and the spin-minority electrons are deflected into opposite directions due to inverse spin Hall effect. The longitudinal spin current is converted into a transverse electric current and leads to the terahertz emission.

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图 4 (a)拓扑绝缘体表面的能量色散关系图; (b) Rashba界面的能量色散关系图, Rashba界面态和拓扑绝缘体表面态中形成了强烈的自旋-动量锁定; (c)拓扑绝缘体表面的逆Edelstein效应; (d) Rashba界面的逆Edelstein效应, 注入y极化的自旋流密度诱导出x方向的电荷流^[57]

Figure 4. (a) Energy dispersion of the Rashba interface; (b) energy dispersion of the topological insulator. Strong spin-momentum locking can be observed in interface states of the Rashba interface and surface states of the topological insulator; (c) the inverse Edelstein effect of Rashba interfaces; (d) the inverse Edelstein effect of topological insulator surface states. The y-polarized spin current induces a charge current in the x direction^[57].

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