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Metal halide perovskite nanocrystals (NCs) have attracted great attention in the fields of light-emitting diodes, lasers, X-ray imaging, solar cells and photoelectric detectors due to their excellent optoelectronic properties. Compared with organic-inorganic hybrid perovskite NCs, all inorganic perovskite CsPbX3 (X = Cl, Br, I) NCs have good photoelectric properties and high stability. To further improve the photoluminescence (PL) quantum yields (QYs) and stability of CsPbX3 NCs, researchers reduced the defects as nonradiative recombination centers in NCs by the following strategies: 1) surface treatment with different ligands; 2) control of synthesis conditions with halide rich compounds; 3) doping of metal ions. Among them, metal doping is considered as a universal and effective way to adjust the optoelectronic properties of semiconductors. It is found that the type and the concentration of metal ions have great influence on the electronic band structure and PL performance of NCs after the metal ions have been doped into CsPbX3 NCs. At the same time, compared with II-VI and III-V semiconductors, the unique structure of all inorganic perovskite NCs makes the doping of metal ions easier. Appropriate doping can not only enhance the intrinsic optical properties of the NCs without affecting their crystal structure, but also introduce new electronic energy levels into the NCs and new luminescent properties of doped metal ions. Based on metal ions doping strategy, the PLQYs of doped CsPbX3 NCs have been enhanced to nearly 100%. In this work, we summarize recent advances in metal doping of the four typical kinds of perovskite NCs, including CsPbCl3, CsPbBr3, CsPbI3, and Mn2+ doped CsPbX3, and discuss the physical mechanisms of the improved properties through doping metal ions. It should be pointed out that the doping of some metal ions such as Ni2+ and Cd2+ into the above four kinds of NC systems can effectively passivate NC defects, thus improving the PL QY and stability of NCs. In addition, we put forward some personal perspectives on the future research subjects of interest and directions of metal doping for enhanced PL of CsPbX3 NCs, which needs to be further explored in order to promote extensive application of perovskite NCs to various optoelectronic devices.
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Keywords:
- metal ions /
- doping /
- inorganic perovskite /
- photoluminescence quantum yields
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图 1 纳米晶的形貌和晶体结构 (a)和(b)分别为Cu掺杂CsPbCl3纳米晶前后的TEM图片, 插图为单个纳米晶的高分辨TEM图片[49]; (c)为Cu掺杂CsPbCl3纳米晶前后的XRD图谱[49]
Figure 1. Morphology and crystal structure of nanocrystals (NCs): (a), (b) TEM images of CsPbCl3 and Cu doped CsPbCl3 NCs, the inset shows high resolution TEM images of a single NC[49]; (c) XRD patterns of CsPbCl3 and Cu doped CsPbCl3 NCs[49].
图 2 金属离子掺杂CsPbCl3纳米晶的光学性能和晶体结构 (a) Cu掺杂CsPbCl3纳米晶的吸收光谱和PL光谱[49]; (b) BaCl2掺杂CsPbCl3纳米晶示意图[50]; CdCl2处理前后CsPbCl3纳米晶的PL光谱(c)和PL衰减曲线(d), 图(c)的内插图为处理前后样品在紫外光激发下的数码照片[52]; (e) Ni2+掺杂CsPbCl3纳米晶的DFT计算掺杂能带结构和态密度图, 其中水平虚线表示费米能级[53]
Figure 2. Optical properties and crystal structure of metal ion doped CsPbCl3 NCs. (a) Absorption and PL spectra of CsPbCl3 and Cu-doped CsPbCl3 NCs[49]. (b) Schematic diagram of doping models for BaCl2 doped CsPbCl3[50]. PL spectra (c) and PL decay curves (d) of CsPbCl3 NCs before and after CdCl2 treatment. The inset in panel (c) shows the photos of untreated and treated samples under a UV lamp[52]. (e) Band structure and DOS of Ni2+:CsPbCl3 by DFT calculation. The horizontal dotted line represents the Fermi level[53]
图 3 金属离子掺杂CsPbBr3纳米晶的光学性能和晶体结构 (a) Sb3+掺杂CsPbBr3示意图[57]; (b) Ni2+掺杂CsPbBr3纳米晶掺杂浓度与PLQY间的关系图[59]; (c) Cu2+掺杂CsPbBr3纳米晶掺杂浓度与PLQY之间的关系图[60]; (d)和(e)分别为CsPbBr3纳米在Cu2+掺杂前后能隙结构[60]; (f) Mg2+掺杂CsPbCl3, CsPbBr3前后的PL谱及PLQY[51]
Figure 3. Optical properties and crystal structure of metal ion doped CsPbBr3 NCs: (a) Schematic illustration of Sb3+ doped CsPbBr3[57]; (b) PLQY vs. Ni2+ doping concentration of CsPbBr3 NCs[59]; (c) PLQY vs. Cu2+ doping concentration of CsPbBr3 NCs; electronic band structures before (d) and after (e) of Cu2+doped CsPbBr3 NCs by DFT calculations[60]; (f) PL spectra and PLQYs before and after Mg2+ doping of CsPbCl3 and CsPbBr3 NCs[51]
图 4 金属离子掺杂CsPbI3纳米晶的光学性能 (a)不同Cu2+浓度的CsPbBrI2纳米晶PLQY[62]; (b)不同SrI2掺杂浓度的CsPbI3纳米晶PLQY随时间天数的变化[63]; (c)不同Ni2+掺杂浓度的吸收和PL光谱[64]; (d) Sb3+掺杂与(e)非掺杂CsPbI3纳米晶薄膜PL强度随时间的变化[65]; (f)不同Zn掺杂浓度下CsPbI3纳米晶的吸收、PL光谱和PLQY[66]
Figure 4. Optical properties of metal ion doped CsPbI3 NCs: (a) PLQY of CsPbBrI2 NCs solution with different dopant concentration of Cu2+[62]; (b) PLQY values as a function of aged days for unsubstituted and Sr2+-substituted CsPbI3 NCs solutions[63]; (c) absorption and PL spectra of as-synthesized Ni (II) doped CsPbI3 NCs[64]; successive PL spectra of Sb3+ doped (d) and undoped (e) CsPbI3 NCs[65]; (f) the absorption and PL peak maxima and PLQYs of CsPbI3 NCs with different Zn-to-(Zn plus Pb) ratios[66]
图 5 Mn2+掺杂CsPbX3纳米晶光学性能 (a) Mn2+掺杂前后CsPbCl3纳米晶的PL光谱和UV光照下的数码照片[67]; Mn2+掺杂CsPbCl3纳米晶分别在340 K (b)和360 K (c)热处理下的PL强度及PL寿命随时间的变化[69]
Figure 5. Optical properties of Mn2+ doped CsPbI3 NCs: (a) PL spectra and photographs under UV excitation of CsPbCl3 NCs before and after Mn2+ doping[67]; (b), (c) PL intensity and PL lifetime of Mn2+:CsPbCl3 at different temperature (340 and 360 K) with different time[69].
图 6 金属离子和Mn2+掺杂CsPbX3纳米晶的光学性能 (a) Mn2+:CsPbX3纳米晶的PLQY与不同Ni/Pb比间的关系[72];(b) CdCl2溶液处理后Mn2+:CsPbX3纳米晶的PL光谱和PL衰减曲线[73]; (c) CdCl2溶液处理后Mn2+:CsPbX3纳米晶经过不同纯化次数在紫外激发下的数码照片[73]
Figure 6. Optical properties of CsPbX3 NCs doped with metal ions and Mn2+: (a) PLQY of Mn2+ doped CsPbX3 NCs vs. Ni/Pb ratios[72]; (b) PL spectrum and PL decay curve of Mn2+ doped CsPbX3 NCs after treatment with CdCl2 solution[73]; (c) digital photos of Mn2+ doped CsPbX3 NCs before and after treatment with CdCl2 solution under UV excitation with different purification times[73].
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