Research progress of solution processed all-inorganic perovskite solar cell

Wang Ji-Ming; Chen Ke; Xie Wei-Guang; Shi Ting-Ting; Liu Peng-Yi; Zheng Yi-Fan; Zhu Rui

doi:10.7498/aps.68.20190355

Abstract

Photovoltaic technology, which can converse solar illumination into electricity, is crucial to the sustainable development of human civilization. Among them, the organic-inorganic hybrid perovskite solar cell (OIPSC) has become a research front due to its excellent photoelectric characteristics, low production cost and high power conversion efficiency (PCE). Although the PCE of OIPSC has exceeded 24%, the organic components in the perovskite system are sensitive to the decomposion caused by either being exposed to light or heated in high temperature environment. The stability defects have greatly limited the commercialization of perovskite solar cells. Therefore, it is urgent to improve the stability of perovskite solar cells, especially to solve the material decomposition problem. All-inorganic perovskite photovoltaic material, composed of all-inorganic elements, exhibits excellent heat and moisture resistance. Therefore, the development of all-inorganic perovskite solar cells is of great significance for solving the current stability problems in perovskite photovoltaics. In this work, we review the recent research progress of all-inorganic perovskite solar cells, discuss the solution approaches to processing all-inorganic perovskite films, and explore the enhancement of device stability. Our work provides a guideline for further promoting the device stability and PCE.

Keywords:

Authors and contacts

1.
Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, China
2.
State Key Laboratory For Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871, China
3.
Collaboration Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

Corresponding author: Liu Peng-Yi, tlpy@jnu.edu.cn ; Zheng Yi-Fan, yifan.zheng@pku.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11804117, 61674070), the Fundamental Research Funds for the Central Universities, China (Grant No. 21618313), the Key Science and Technology Program of Guangdong Province, China (Grant No. 2017B09090701), and the China Postdoctoral Innovation Talent Foundation (Grant No. 8206200013).

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图 1 立方晶格钙钛矿结构ABX₃

Figure 1. Cubic perovskite structures of ABX₃.

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图 2 (a)一步成膜法制备CsPbI₃粉末及薄膜^[38]; (b)多步成膜法制备CsPbBr₃^[49]; (c)喷涂^[62]; (d)一步静电纺丝工艺^[63]

Figure 2. Schematic illustration of (a) the one-step solution-phase synthesis and powders and thin film fabrication of CsPbI₃^[38], (b) the multi-step fabrication process of the cesium lead bromide films^[49]; (c) spray-coated^[62]; (d) one-step electrospinning technique^[63].

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图 3 (a) CsPbBr₃, Cs_0.98Li_0.02PbBr₃, Cs_0.94Na_0.06PbBr₃, Cs_0.92K_0.08PbBr₃和Cs_0.91Rb_0.09PbBr₃薄膜的表面扫描电子显微镜(SEM)图像和不同碱金属阳离子掺杂全无机PSCs的伏安特性曲线^[65]. (b) 各种金属离子对Pb²⁺的部分取代(掺杂或合金化), 改善正交CsPbBr₃的热稳定性, 使α-CsPbI₃稳定化^[83]. 下图显示了Sn基全无机钙钛矿中随Br^–浓度变化的带隙变化曲线图: 从左到右为CsSnI₃, CsSnI₂Br, CsSnIBr₂和CsSnBr₃^[84]. (c) 在FTO / c-TiO₂/m-TiO₂基底上制备的不同镧系元素掺杂的钙钛矿薄膜的SEM图像: CsPbBr₃, Yb³⁺-CsPbBr₃, Er³⁺-CsPbBr₃, Ho³⁺-CsPbBr₃, Tb³⁺-CsPbBr₃, Sm³⁺-CsPbBr₃^[90]; (d)纯CsPbI₃和CsPbI_3–xCl_x的化学烧结薄膜的紫外-可见吸收光谱和Abs及PL (右侧, 吸收(细线)和光致发光(粗线))图谱^[94,95]; (e) CsPbI₃通过PEO进行相稳定的机制和薄膜制备流程^[99]

Figure 3. (a) Scanning electron microscope (SEM) images of the CsPbBr₃, Cs_0.98Li_0.02PbBr₃, Cs_0.94Na_0.06PbBr₃, Cs_0.92K_0.08PbBr₃, and Cs_0.91Rb_0.09PbBr₃ films and J-V curves of different alkali metal cations doped PSCs under air mass 1.5 global^[65]. (b) Schematic representation showing partial substitution (doping or alloying) of Pb²⁺ by various metal ions, which can lead to stabilization of α-CsPbI₃ at room temperature and improved thermal stability of orthorhombic CsPbBr₃^[83]. The graphic is about band gap variation with respect to Br⁻ concentration in the Sn based all-inorganic perovskite: CsSnI₃, CsSnI₂Br, CsSnIBr₂ and CsSnBr₃ from left to right^[84]. (c) The top SEM images of as-prepared perovskite films with different Lanthanide-doping on FTO/c-TiO₂/m-TiO₂ substrates CsPbBr₃, Yb³⁺-CsPbBr₃, Er³⁺-CsPbBr₃, Ho³⁺-CsPbBr₃, Tb³⁺-CsPbBr₃, Sm³⁺-CsPbBr₃^[90]. (d) UV-vis absorbance spectra of chemically sintered thin films of pure CsPbI₃ and CsPbI_3−xCl_x, absorption spectra (thin lines) and photoluminescence (PL) spectra (thick lines) of CsPbX₃ samples^[94,95]. (e) PEO added in precursor colloidal solution to improve the stability of perovskite film and the fabrication process of CsPbI₃^[99].

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图 4 (a) α-CsPbI₃ QDs PCSs的结构和基于μGR/ CsPbI₃薄膜的PSCs的电荷传输过程和稳定机制的示意图^[113]; (b) 基于CsPbI₃钙钛矿纳米线的光电探测器装置的能带图, 其中铝和氧化铟锡(indium tin oxides, ITO)作为电极, 基于CsPbI₃钙钛矿纳米线的器件的示意图, 具有面积为0.0314 cm²的ITO的顶部圆形电极^[122]; (c) 合成2D超薄CsPbBr₃纳米片高倍放大SEM图像^[125]; (d) 分级界面的太阳能电池的结构示意图和SEM图像^[133]

Figure 4. (a) Architecture of the completed α-CsPbI₃ device and the charge transport process and stabilization mechanism for the μGR/CsPbI₃ film based PSCs^[113]; (b) band diagram for CsPbI₃ perovskite nanowires (NWs)-based photodetector device and CsPbI₃ perovskite NWs based device with top circular electorode^[122]; (c) 2D-CsPbBr₃ nanosheets high-magnification SEM images^[125]; (d) schematic structures of devices without and with a graded interface and SEM images of CsPbBrI₂ film, CsPbBrI₂ NSs/CsPbBrI₂ film, CsPbBrI₂ QDs/CsPbBrI₂ film, and CsPbBrI₂ QDs/CsPbBrI₂ NSs/CsPbBrI₂ film^[133].

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图 5 (a) KPFM测量非老化和热老化的CsPbBr₃振幅, 晶界上的形貌和功函数信号^[135]; (b) CsPbI₃在5 kV, 1 nA和点1, 2和3的CL光谱下的SEM图像^[16]; (c)在光照射前后比较CsPbBr₃和MAPbBr₃之间的SEM图像的示意图^[15]; (d) CsPbI₃钙钛矿薄膜上的梯度Br掺杂和PTA有机阳离子表面钝化的示意图^[27]

Figure 5. (a) KPFM measurement on the non-aged and thermally aged CsPbBr₃ amplitude, cross-sections of topography and work function signals over the grain boundary^[135]; (b) SEM image of CsPbI₃ under 5 kV, 1 nA, and CL spectra of points 1, 2 and 3 ^[16]; (c) schematic comparing SEM images between the CsPbBr₃ and MAPbBr₃ before and after illumination^[15]; (d) gradient Br doping and PTA organic cation surface passivation on CsPbI₃ perovskite thin film^[27].

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表 1 溶液法及其他方法全无机PSCs性能

Table 1. Performance of all inorganic perovskite solar cells fabricated by solution or other process.

电池结构	制备方法	V_OC/V	J_sc/mA·cm^–2	FF/%	PCE/%	参考文献
FTO/PEDOT:PSS/CsPbI₃/PCBM/Al	溶液法	~0.9	3		1.7	[26]
FTO/c-TiO₂/CsPbI₃/Spiro-OMeTAD/Au	溶液法	0.8	12		2.9	[26]
FTO/c-TiO₂/m-TiO₂/CsPbI₃/Spiro-OMeTAD/Au	溶液法	~0.6	8		1.3	[26]
FTO/c-TiO₂/CsPbI₃/CuI/Au	溶液法	0.89	16.02	56.59	8.07	[149]
FTO/c-TiO₂/CsPb_0.96Bi_0.04I₃/CuI/Au	溶液法	0.97	18.76	72.59	13.21	[149]
FTO/TiO₂/CsPbI₃/Spiro-OMeTAD/Ag	溶液法	0.66	11.92	52.47	4.13	[39]
FTO/c-TiO₂/CsPbI₃/Carbon	溶液法	0.67	14.31	48	4.65	[38]
FTO/c-TiO₂/m-TiO₂/CsPbI₃/Carbon	溶液法	0.58	13.74	44	3.48	[38]
FTO/TiO₂/AX-coatedCsPbI₃-QDs/Spiro-OMeTAD/MoO_x/Al	溶液法	1.16	15.24	76.63	13.43	[110]
FTO/TiO₂/CsPbI₃ QDs/Spiro-OMeTAD/MoO_x/Al	溶液法	1.23	13.47	65	10.77	[23]
MgF₂/FTO/c-TiO₂/m-TiO₂/CsPb_0.95Ca_0.05I₃/P3HT/Au	溶液法	0.95	17.9	80	13.5	[78]
ITO/PTAA/zwitterion-CsPb(I_0.98Cl_0.02)₃/PCBM/C₆₀/BCP/Al	溶液法	1.09	14.9	70	11.4	[150]
ITO/TiO₂/CsPbBr₃/Carbon	溶液法	0.64	5.3	64	3.9	[151]
FTO/TiO₂/CsPbI₂Br-0.02MnCl₂/PCBM/Ag	溶液法	1.172	14.37	80	13.47	[85]
FTO/TiO₂/CsPbI₂Br/PTAA/Au	溶液法	1.177	14.25	80.2	13.45	[77]
FTO/TiO₂/CsPbI₃ QDs/PTAA/Au	溶液法	1.192	11.75	78.3	10.97	[77]
FTO/c-TiO₂/CsPbI₃-0.05DETAI₃/P3HT/Au	溶液法	1.06	12.21	61	7.89	[101]
FTO/TiO₂/quasi-2D Cs_0.9PEA_0.1PbI₃/Spiro-OMeTAD/Au	溶液法	0.838	10.96	62	5.7	[128]
FTO/NiO_x/InCl₃:CsPbI₂Br/ZnO@C₆₀/Ag	溶液法	1.15	15.1	78	13.57	[91]
FTO/NiO_x/CsPbI₂Br/ZnO@C₆₀/Ag	溶液法	1.1	15.1	78	12.92	[91]
FTO/TiO₂/CsPbI₃/Carbon	溶液法	0.79	18.5	65	9.5	[37]
FTO/TiO₂/CsPbI₃ QDs/PTB7/MoO_x/Ag	溶液法	1.27	12.39	80	12.55	[112]
FTO/c-TiO₂/BA₂CsPb₂I₇/Spiro-OMeTAD/Au	溶液法	0.957	8.88	57	4.84	[127]
FTO/TiO₂/CsPb_0.995Mn_0.005I_1.01Br_1.99/Carbon	溶液法	0.99	13.15	57	7.36	[86]
FTO/bl-TiO₂/2 wt% Sn-TiO₂/Cs₂SnI₄Br₂/solid state Cs₂SnI₆ based HTM/LPAH	溶液法	0.563	6.22	57.7	2.025	[52]
FTO/TiO₂/CsPbI₂Br/CsPbI₃ QDs/PTAA/Au	溶液法	1.204	15.25	78.7	14.45	[77]
FTO/c-TiO₂/m-TiO₂/CsPbBr₃/MoS₂ QDs/Carbon	喷涂法	1.307	6.55	79.4	6.80	[152]
FTO/c-TiO₂/m-TiO₂/CsPbIBr₂/Spiro-OMeTAD/Au	喷涂法	1.121	7.9	70	6.2	[59]
FTO/SnO₂ QDs/CsPbBr₃/carbon	溶液法	1.572	7.68	75	9.15	[50]
ITO/PEDOT:PSS/CsPbBr₃/PCBM/Ag	溶液法	0.982	5.9	73.7	4.5	[135]
FTO/m-TiO₂/CsPbBr₃/CsBi_2/3Br₃/carbon	溶液法	1.594	7.75	80.9	10.0	[50]
FTO/SnO₂ QDs/CsPbBr₃/CsSnBr₃ QDs/carbon	溶液法	1.610	7.8	84.4	10.6	[50]
FTO/m-TiO₂/Cs₂AgBiBr₆/Spiro-MeOTAD/Ag	溶液法	0.98	3.93	63	2.43	[76]
FTO/TiO₂/PTABrCsPbI₃/Spiro-MeOTAD/Ag	溶液法	1.104	19.15	68.5	17.06	[27]
FTO/TiO₂/CsPbI₃/Spiro-MeOTAD/Ag	溶液法	1.051	18.89	68.5	13.61	[27]
PET/ITO/TiO₂/CsPb_0.96Bi_0.04I₃/Spiro-OMeTAD/Au	溶液-气相辅助法	1.05	15.11	72.32	11.47	[87]
ITO/TiO₂/CsPbI₃/P3HT/Au	气相法	1.063	13.8	71.6	10.5	[142]
ITO/TiO₂/CsPbI₃/Au	气相法	0.959	8.7	56	4.7	[46]
ITO/C₆₀/CsPbI₂Br/TAPC/MoO₃/Ag	气相法	1.15	15.2	67	11.7	[140]
FTO/TiO₂/CsPbI₃/P3HT/Ag	气相法	0.79	12..06	72	6.79	[146]

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