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Graphene, as the representative of two-dimensional materials, has varous novel physical properties and potential applications. The intrinsic zero band gap of graphene limits its application in semiconductor devices, and thus the search for new semiconducting alternative materials has become a current research hotspot. Phosphorene is the monolayer of black phosphorus and has a puckered honeycomb structure. Its advanced properties, such as adjustable direct band gap, high carrier mobility and in-plane anisotropy and so on, have recently aroused great research interest, thus opening up the research field of puckered honeycomb monolayers in group V elements. In this article, we first focus on the structure, synthesis and physical properties of five single-element two-dimensional materials (nitrogen, phosphorus, arsenic, antimony and bismuth) each with puckered honeycomb structure. Second, some binary two-dimensional materials with puckered honeycomb structure are discussed, including IV-VI and V-V compounds. These materials have their own unique crystal symmetry, and the properties can be controlled by changing their structures and dimensions. Finally, we also make a summary on some current challenges that need to be solved, and the possible future applications of these two-dimensional materials are also presented.
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Keywords:
- group V elements /
- puckered honeycomb /
- two-dimensional materials
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图 1 (a) 2号晶粒的二维X射线衍射(XRD)图像. 白色方框标志了bp结构氮的衍射点, 数字表示相应的米勒指数[41]; (b) 在140 GPa下, bp-N的实验(黑色)和计算(蓝色)的拉曼光谱与文献[31]报道的LP-N结构的计算拉曼光谱(红色)对比; (c) bp-N层的之字形和扶手椅形排列; (d) bp-N的晶格结构; (e) 两层叠加的bp-N结构[40]
Figure 1. (a) 2D XRD image from grain #2. White boxes mark the diffraction spots of BP-structured nitrogen. Numbers indicate corresponding Miller indices[41]. (b) comparison of the experimental (black) and calculated Raman spectrum of bp-N (blue) at 140 GPa with the Raman spectrum calculated in this work for LP-N with the structure reported in Ref [31] (red); (c) the zigzag and armchair arrangements forming the bp-N layers; (d) the crystal structure of bp-N; (e) two superimposed layers of the bp-N structure[40].
图 2 (a) 原子力显微镜成像的单层磷晶体测量厚度约为0.85 nm; (b) 在300 nm SiO2/Si衬底上单层磷和块状黑磷样品的光致发光光谱, 在1.45 eV左右表现出明显光致发光信号[50]; (c) 原始多层磷的图像; (d) 经过Ar+离子薄化后的图像[51]; (e) 在0.35 μm2的衬底上制备的二维黑磷薄膜. 插图:薄膜的高度轮廓, 大约为四层厚度(3.4 nm)[53]
Figure 2. (a) Atomic force microscopy image of a single-layer phosphorene crystal with the measured thickness of about 0.85 nm; (b) photoluminescence spectra for single-layer phosphorene and bulk black phosphorus samples on a 300 nm SiO2/Si substrate, showing a pronounced photoluminescence signal around 1.45 eV [50]; (c) optical image of multilayered pristine phosphorene; (d) the same as in Fig. (c) after Ar+ plasma thinning[51]; (e) thin film of 2D black phosphorene on substrates with 0.35 μm2 area. Inset: height profile for thin film showing thickness of approximately four layers (3.4 nm) [53].
图 3 (a)单层磷烯的俯视图; (b) 单层磷烯的侧视图[59]; (c) 蓝磷的原子模型. 晶胞用黑色菱形标记[61]; (d) 本征单层磷烯的能带结构; (e) 双轴应变5%时磷烯的能带结构; (f) 沿之字形方向施加6%的单轴应变时磷烯的能带结构[59]
Figure 3. (a) Top view of monolayer phosphorene; (b) side views of monolayer[59]; (c) atomic model of blue phosphorus. The unit cell is labeled by the black rhombus[61]; (d) band structures of intrinsic monolayer phosphorene; (e) band structures of phosphorene with a 5% biaxial strain; (f) band structures of phosphorene with a 6% zigzag uniaxial strain[59].
图 4 (a) 正交晶体As的常规晶体结构; (b)单层砷烯的能带结构. 箭头表示间接带隙; (c) 第一性原理revPBE、杂化密度泛函HSE06计算得到的砷烯带隙随层数变化图[70]
Figure 4. (a) The conventional crystal structure of orthorhombic bulk As; (b) band structures of monolayer arsenene. The arrow shows an indirect bandgap; (c) the band gap of arsenene calculated by first-principle revPBE, hybrid density functional HSE06 calculation with the number of layers[70].
图 5 (a)机械剥落的b-As的AFM像; (b)具有原子分辨率的b-As的HRTEM图像, 内插图是选区电子衍射图; (c) 沿b-As和其他二维材料的AC和ZZ方向的电导率σ、迁移率μ、热导率κ和有效质量 m*的平面内各向异性的比较; (d) α-As电导的角度相关现象, 表现出沿armchair (AC)方向的优先输运; (e) 纵向电导率σxx 沿armchair(AC)和zigzag(ZZ)方向的磁场相关转换[75]
Figure 5. (a) A b-As flake mechanically exfoliated and imaged with AFM; (b) HRTEM image of b-As with atomic resolution, inset is the indexed SAED pattern; (c) comparison of in-plane anisotropy in electrical conductivity σ, mobility μ, thermal conductivity κ, and effective mass m* along the AC and ZZ directions of b-As and other 2D materials; (d) angle-dependent appearance on electrical conductance of α-arsenene, exhibiting the preferred transportation along arm-chair (AC) direction; (e)Magnetic-field-dependent conversion of longitudinal conductivity σxx along armchair (AC) and zigzag (ZZ) directions [75].
图 6 在摩尔体积浓度为0.01 mol/L NH4PF6/DMF中电化学剥离的少层砷烯 (a) STEM表征(超声处理过); (b) TEM表征(在花边碳载体上); (c) AFM表征(超声离心过后)[76]
Figure 6. Characterization of the electrochemically exfoliated FA in 0.01 mol/L NH4PF6/DMF by electron microscopy: (a) STEM images of sonicated few-layer arsenene; (b) high-resolution TEM images of the few-layer arsenene on lacey carbon support; (c) AFM images (after washing in the DMF followed by the sonication) [76].
图 7 (a)在WTe2上制备的单层α-Sb的STM形貌图(120 nm × 120 nm), U = +2 V, It = 100 pA; (b) 在U = –50 mV下采集的原子分辨STM图像(8 nm × 8 nm), It = 100 pA, 插图中黑色和黄色矩形标记R2重建和1 × 1晶格的晶胞; (c) 红色曲线为单层α-Sb的–2.5至+2.5 V的STS谱, 蓝色曲线为–2.0 至+1.0 V的放大部分[83]; (d) 在400 K下沉积在SnSe上的约0.5 ML Sb的STM形貌图(400 nm × 400 nm), 插图显示α-锑烯单层的台阶高度(约6.8 Å), U = +3 V, It = 100 pA; (e) 在α-锑烯单层上的原子分辨图像(19.5 nm × 19.5 nm), U = –880 mV, It = 5 nA, 插图显示了一个单元的放大图像(1.5 nm × 1.5 nm), 黑色矩形为1 × 1元胞 U = –1 V, It = 1 nA; (f) 1 ML锑烯费米能附近dI/dV谱的对数形式(从–0.4到+0.4 V), α-锑烯单层的带隙约为170 meV[85]
Figure 7. (a) The STM topographic image (120 nm × 120 nm) of single layer α-Sb fabricated on WTe2. U = +2 V, It = 100 pA. (b) atomically resolved STM topographic images (8 nm × 8 nm) taken at U = –50 mV. It = 100 pA. In the inset, the black and yellow rectangles mark the unit cells of R2 reconstruction and 1 × 1 lattice; (c) The red curve shows the experimental STS of single layer α-Sb from –2.5 to +2.5 V. The blue curve is the enlarged part from –2.0 to +1.0 V[83]. (d) The STM image (400 nm × 400 nm) of about 0.5 ML Sb deposited on SnSe at 400 K. The inset shows the step height of the α-antimonene monolayer (about 6.8 Å). U = +3 V, It = 100 pA. (e) The atomically resolved STM image (19.5 nm × 19.5 nm) taken on the α-antimonene monolayer. U = –880 mV, It = 5 nA. The inset shows the enlarged image (1.5 nm × 1.5 nm) of panel e. The 1 × 1 unit cell is marked by the black rectangle. U = –1 V, It = 1 nA. (f) The logarithmic format of the dI/dV spectra near the Fermi energy (from –0.4 to +0.4 V) for the 1 ML antimonene films. The band gap of the α-antimonene monolayer isabout 170 meV [85].
图 8 (a)在约350 K退火10 min后在SnSe上生长的Sb的表面(100 nm × 100 nm). U = +3 V, It = 100 pA. (b) 沿(a)中红色箭头线的扫描线. (c) 半层锑的原子结构. 上图: 大尺度图像(7 nm × 7 nm) U = –1.3 V; It = 1 mA. 下图: 从上图提取的放大图像(3.5 nm × 2.5 nm). 半层(HL) Sb和全层(FL) α-Sb区域被标记在图像上. 为获得更好的视觉效果, 黄点阵列部分叠加在表面原子上. (d) 通过传统的直接过程(灰色路径)和两步过程(红色路径), 从dH结构到皱褶α-Sb层的动力学路径. 插图显示了初始dH结构、中间结构、最终α-Sb结构和过渡态的原子结构. 能量分布图上标记的点表示每个相应原子结构的位置[84]
Figure 8. (a) The as-grown surface (100 nm × 100 nm) after about 0.5 ML Sb is deposited on the SnSe substrate kept at about 350 K. U = +3 V, It = 100 pA. (b) line-scan profile taken along the red arrowed line in Fig. (a). (c) atomically resolved images taken on the as-grown sample. Upper panel: large-scale images (7 nm × 7 nm). U = –1.3 V; It = 1 nA. Lower panel: Zoom-in images (3.5 nm × 2.5 nm) extracted from the upper panel. The regions of the half-layer (half layer,HL) Sb and full layer (full layer,FL) α-Sb are labeled on the images. The yellow dot arrays are partially superimposed on the surface atoms for better vision. (d) kinetic pathways from the dH structure to the puckered α-Sb layer through a traditional direct process (gray path) and a two-step process (red path). Insets show the atomic structures of the initial dH structure, the intermediate structure, the final α-Sb structure, and the transition states. The points marked on the energy profile indicate the position of each corresponding atomic structure[84].
图 9 (a) 黑磷结构和块体结构下, 4 ML Bi原子的侧视图; (b) 实验测得在石墨烯上生长的Bi(110)面的原子分辨图, 上层叠加的是1 ML Bi(110)面的原子球棍模型; (c) 典型的4 ML Bi(110)纳米带上进行STS谱测量, 绿色虚线表示在EG上的Bi和纳米网(NM)上的Bi之间的边界. 为了清楚起见, STS曲线垂直移动. 特征峰用标号表示[92]; (d) 在HOPG衬底上生长的2 ML和4 ML的Bi(110)岛; (e) 4 ML Bi(110)面的原子分辨图; (f) 沿着图(e)中蓝线和绿线方向的高度起伏图[93]
Figure 9. (a) Side view of 4 ML Bi atoms under black phosphorous structure and bulk structure. (b) atomic resolution image of Bi(110) surface grown on graphene, superimposed on the upper layer. The atomic ball and stick model of 1 ML Bi(110) surface. (c) STS measurements on a typical 4 ML Bi(110) nanoribbon. The boundary between Bi on EG and Bi on the nanomesh (NM) is highlighted by a green dotted curve. The STS curves are shifted vertically for clarity. The characteristic peaks are denoted by labels[92]. (d) Bi(110) islands of 2 ML and 4 ML grown on HOPG substrate. (e) 4 ML Bi(110) surface atom resolution image. (f) Diagram of height fluctuations along the blue and green lines in Fig. (e)[93].
图 10 (a) Bi(110)岛的STM形貌图, U = –0.5 V, It = 0.3 nA, 岛的高度显示在每个图像的左上角, 每个图像的自相关显示在插图中; (b)波纹的平均峰距; (c)波纹的振幅的高度依赖性[95]
Figure 10. (a) STM topographic images of the corrugation on the Bi(110) islands. U = –0.5 V, It = 0.3 nA. The height of the island is indicated in long-range the top left corner of each image, and the autocorrelation of each image is displayed in the inset. (b) and (c) Height dependences of the average peak distance and amplitude of the corrugation [95].
图 11 (a) 优化后的单层Ⅳ族单硫族化物的类磷烯结构. 四种化合物和磷烯的x-z平面的侧面图. SnS与磷烯y-z平面的侧面图. 结构的俯视图, 沿x和y方向有晶格向量a和b. 相应的倒空间布里渊区和高对称点Г, X, T, Y[110]. (b) SnSe纳米片的TEM图像. (c) SnSe纳米片的原子力显微镜图像以及它的高度数据[117]. (d) 7 nm SnSe薄膜(60 nm × 60 nm)的STM图像. 插图显示了沿黑线的线条轮廓. (e) 在Bi2Se3薄膜上生长的16 nm SnSe薄膜的截面HRTEM图像[118]
Figure 11. (a) Optimized structures of monolayers of group-IV monochalcogenides with phosphorenelike structure. Side view of the x-z plane for the four compounds and for phosphorene. Side view of the y-z plane of SnS and phosphorene. Top view of the structures, with the lattice vectors a and b along the x and y directions. The BZ and the high-symmetry points Г, X, T and Y[110]. (b) TEM images of SnSe nanosheets. (c) AFM images of SnSe nanosheets with their height data[117]. (d) STM image of a 7 nm SnSe film (60 nm × 60 nm). The inset shows the line profile along the black line. (e) Cross-section HRTEM image of a 16 nm SnSe film grown on Bi2Se3 film[118].
图 12 (a) SnTe薄膜的典型STM形貌图; (b) 域结构, 每个区域的箭头表示晶格畸变的方向; (c) 晶格畸变, 铁电相中晶格畸变和原子位移的示意图, 实线表示岩盐单元格, 虚线表示Te子格的原始单元格, 箭头指向扭曲的方向; (d) 电场对极化的操纵, 在薄膜上施加5 V电压脉冲前后50 ms相同区域的地形图像, 箭头指示极化的方向; (e) 能带弯曲, 在左图中, 沿着两个箭头获得了空间分辨的dI/dV spectra(右图) [123]; (f) 横向SnS存储器件(通道长度L = 4 μm, 从–5.5 V循环到5.5 V)在不同栅极电压Vg下的I-V磁滞曲线[129]; (g) 采用迭代法(实线)和单模弛豫时间近似法(single-mode relaxation time approximation,SMRTA)(虚线)计算了Ⅳ-Ⅵ族单层膜的晶格导热系数随温度的变化. 四种材料的晶格导热系数都很低, 同时沿扶手椅和之字形方向的晶格导热系数不同[136]
Figure 12. (a) Typical STM topographic image of SnTe film. (b) Domain structure. The arrowsin each domain indicate the direction of lattice distortion. (c) Lattice distortion. Schematic of the lattice distortion and atom displacement in the ferroelectric phase. The solid lines indicate the rock-salt unit cell, and the dashed lines indicate the primitive cell of the Te sublattice. The arrows point to the directions of distortion. (d) Polarization manipulation by electric field. Topography images of the same area before (upper) and after (lower) a 5 V voltage pulse is applied for 50 ms on the film. The arrows indicate the direction of polarization. (e) Band-bending. Spatially resolved dI/dV spectra (right panels) obtained along the two arrows in the image on the left[123]. (f) I-V hysteresis curves of a lateral SnS memory device (channel length L = 4 μm, cycled from –5.5 to 5.5 V) measured at different gate voltages Vg[129]. (g) lattice thermal conductivity for the group IV–VI monolayers are calculated as a function of the temperature using iterative (solid lines) and SMRTA (dashed lines) method. All four of the materials have very low lattice thermal conductivity. We also found the different lattice thermal conductivity along the armchair and zigzag directions[136].
图 13 (a) 室温MD模拟中, α-AsP, α-SbN, α-PN和α-AsN的总能量与时间的关系, 同时显示了6 ps结束时的几何结构[145]; (b) 前人研究的二维压电晶体(MoS2, GeSe和SnSe)和Ⅴ族二元化合物的弛豫离子压电系数的比较[147]
Figure 13. (a) Relationships of total energy and time during room-temperature MD simulations of α-AsP, α-SbN, α-PN, and α-AsN, respectively. The final geometric structures at the end of 6 ps are also shown[145]. (b) Comparison of the relaxed-ion piezoelectric coefficients between previously studied 2D piezoelectric crystals (MoS2, GeSe, and SnSe) and group-V binary compounds presented in this work[147].
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