Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga<sub>2</sub>O<sub>3</sub>-SiC-Ag multilayer structures

Hu Sheng-Run; Ji Xue-Qiang; Wang Jin-Jin; Yan Jie-Yun; Zhang Tian-Yue; Li Pei-Gang

doi:10.7498/aps.73.20231534

Abstract

Optical bistability has attracted much attention due to its enormous potential applications in all-optical operation and signal processing. However, the weak nonlinear responses typically require huge pump power to reach the threshold of the optical bistability, thus hindering the real applications. In this study, we propose an efficient optical bistable metamaterial, which is composed of multilayer Ga₂O₃-SiC-Ag metal-dielectric nanostructures. We not only use the epsilon-near-zero (ENZ) with SiC-Ag thin layers to enhance the substantial field, but also incorporate the SiC material to increase its significant optical nonlinear coefficient. In the structural design, the introduction of Ga₂O₃ layer facilitates the light field concentration, contributing to the further reduction in threshold power for optical bistability, and also conducing to the improvement of the physical and chemical stability of the device. The influences of the thickness and length of the ENZ layer on the optical bistability are systematically investigated by using the finite element method. The results demonstrate that optical bistability becomes more pronounced with the increase of the thickness and length of ENZ layer, exhibiting a bistability switching threshold as low as ~10^–6 W/cm² in the telecommunication band. Comparing with the previously reported optical bistability based on ENZ mechanism, the threshold shows a significant reduction by 9 orders of magnitude, demonstrating great application potential in the fields of semiconductor devices and photonic integrated circuits.

Keywords:

Authors and contacts

1.
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
2.
Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
3.
Laboratory of Power Devices and Power Integrated Circuits, School of Integrated Circuits,Beijing University of Posts and Telecommunications, Beijing 100876, China

Corresponding author: Zhang Tian-Yue, tianyue_zhang@bupt.edu.cn ; Li Pei-Gang, pgli@bupt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 51572241), the BUPT Excellent Ph.D. Students Foundation, China (Grant No. CX2023301), and the Fundamental Research Funds for the Central Universities, China (Grant No. 2023RC87).

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References

[1]	董丽娟, 薛春华, 孙勇, 邓富胜, 石云龙 2016 物理学报 65 114207 Google Scholar 1] Dong L J, Xue C H, Sun Y, Deng F S, Shi Y L 2016 Acta Phys. Sin. 65 114207 Google Scholar
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[3]	Bassani F, Liedl G L, Wyder P 2005 Encyclopedia of Condensed Matter Physics (Oxford: Elsevier) pp147–152
[4]	Keshtkar P, Miri M, Yasrebi N 2021 Appl. Opt. 60 7234 Google Scholar
[5]	Hu X Y, Jiang P, Ding C Y, Yang H, Gong Q H 2008 Nat. Photonics 2 185 Google Scholar
[6]	Liu C W, Liu Y, Du L, Su W J, Wu H, Li Y 2023 Opt. Express 31 9236 Google Scholar
[7]	Li Y N, Chen Y Y, Wan R G, Yan H W 2019 Phys. Lett. A 383 2248 Google Scholar
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[9]	Carmichael H J 1993 Phys. Rev. Lett. 70 2273 Google Scholar
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[33]	De Leonardis F, Soref R A, Passaro V M N 2017 Sci. Rep. 7 40924 Google Scholar
[34]	Borshch A, Brodyn M, Volkov V I, Rudenko V I, Lyakhovetskii V, Semenov V, Puzikov V 2008 JETP Lett. 88 386 Google Scholar
[35]	Brodyn M, Volkov V, Lyakhovetskii V, Rudenko V, Puzilkov V, Semenov A 2012 J. Exp. Theor. Phys. 114 205 Google Scholar
[36]	Johnson P B, Christy R W 1972 Phys. Rev. B 6 4370 Google Scholar
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[38]	Silvester P P, Ferrari R L 1996 Finite Elements for Electrical Engineers (Cambridge University Press
[39]	Jin J M 2015 The Finite Element Method in Electromagnetics (John Wiley & Sons
[40]	Lu J, Thiel D V 2000 IEEE Trans. Magn. 36 1000 Google Scholar
[41]	Selleri S 2003 IEEE Antennas Propag. Mag. 45 86 Google Scholar
[42]	Bhaumik I, Bhatt R, Ganesamoorthy S, Saxena A, Karnal A, Gupta P, Sinha A, Deb S 2011 Appl. Opt. 50 6006 Google Scholar
[43]	Pearton S, Yang J, Cary P H, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301 Google Scholar
[44]	Gosciniak J, Hu Z, Thomaschewski M, Sorger V J, Khurgin J B 2023 Laser Photonics Rev. 17 2200723 Google Scholar

Cited By

图 1 (a) 基于ENZ材料(Ga₂O₃-SiC-Ag)的光学双稳态的工作原理图; (b) 多层光学双稳态器件的几何特性图

Figure 1. (a) The working principle diagram of an optical bistable based on ENZ material (Ga₂O₃-SiC-Ag); (b) the proposed multi-layered optical bistable device’s geometric characteristics.

DownLoad: Full-Size Img PowerPoint

图 2 (a) 正负介电常数的光学相图; (b) Ag填充分数为0.1的多层结构平行介电常数$ {\varepsilon }_{//} $的实部和虚部

Figure 2. (a) Optical phase diagram of the positive and negative permittivities; (b) real and imaginary parts of the parallel ($ {\varepsilon }_{//} $) permittivities for the multilayer structure with a Ag fraction of 0.1.

DownLoad: Full-Size Img PowerPoint

图 3 电场在器件中的空间分布　(a) 普通模式(1550 nm); (b) ENZ模式(1350 nm). Y方向电场振幅分布　(c) 普通模式(1550 nm); (d) ENZ模式(1350 nm)

Figure 3. The spatial distribution of the electric field in the device: (a) Normal mode (1550 nm); (b) ENZ mode (1350 nm). The amplitude distribution of the electric field in the Y direction: (c) Normal mode (1550 nm); (d) ENZ mode (1350 nm).

DownLoad: Full-Size Img PowerPoint

图 4 ENZ层厚H为10 nm时, 不同SiC-Ag层的对数下基于ENZ模式的光学双稳态曲线　(a) 40组; (b) 60组; (c) 80组

Figure 4. When the ENZ layer thickness H is 10 nm, optical bistable curves are obtained for varying quantities of SiC-Ag pairs: (a) 40 pairs; (b) 60 pairs; (c) 80 pairs.

DownLoad: Full-Size Img PowerPoint

图 5 电场在器件中的空间分布　(a) 普通模式(1700 nm); (b) ENZ模式 (1400 nm). Y方向电场振幅分布　(c) 普通模式(1700 nm); (d) ENZ模式(1400 nm)

Figure 5. The spatial distribution of the electric field in the device: (a) Normal mode (1700 nm); (b) ENZ mode (1400 nm). The amplitude distribution of the electric field in the Y direction: (c) Normal mode (1700 nm); (d) ENZ mode (1400 nm).

DownLoad: Full-Size Img PowerPoint

图 6 ENZ层厚H为20 nm时, 不同SiC-Ag层的对数下基于ENZ模式的光学双稳态曲线　(a) 40组; (b) 60组; (c) 80组

Figure 6. When the thickness H of the ENZ layer is 20 nm, optical bistable curves are obtained for varying quantities of SiC-Ag pairs: (a) 40 pairs; (b) 60 pairs; (c) 80 pairs.

DownLoad: Full-Size Img PowerPoint

[1]	董丽娟, 薛春华, 孙勇, 邓富胜, 石云龙 2016 物理学报 65 114207 Google Scholar 1] Dong L J, Xue C H, Sun Y, Deng F S, Shi Y L 2016 Acta Phys. Sin. 65 114207 Google Scholar
[2]	张强, 周胜, 励强华, 王选章, 付淑芳 2012 物理学报 61 157501 Google Scholar Zhang Q, Zhou S, Li Q H, Wang X Z, Fu S F 2012 Acta Phys. Sin. 61 157501 Google Scholar
[3]	Bassani F, Liedl G L, Wyder P 2005 Encyclopedia of Condensed Matter Physics (Oxford: Elsevier) pp147–152
[4]	Keshtkar P, Miri M, Yasrebi N 2021 Appl. Opt. 60 7234 Google Scholar
[5]	Hu X Y, Jiang P, Ding C Y, Yang H, Gong Q H 2008 Nat. Photonics 2 185 Google Scholar
[6]	Liu C W, Liu Y, Du L, Su W J, Wu H, Li Y 2023 Opt. Express 31 9236 Google Scholar
[7]	Li Y N, Chen Y Y, Wan R G, Yan H W 2019 Phys. Lett. A 383 2248 Google Scholar
[8]	Nozaki K, Shinya A, Matsuo S, Suzaki Y, Segawa T, Sato T, Kawaguchi Y, Takahashi R, Notomi M 2012 Nat. Photonics 6 248 Google Scholar
[9]	Carmichael H J 1993 Phys. Rev. Lett. 70 2273 Google Scholar
[10]	Gibbs H M, McCall S L, Gossard A C, Passner A, Wiegmann W, Venkatesan T N C 1979 Laser Spectroscopy IV (Berlin: Heidelberg) pp441–450
[11]	Koenderink A F, Alù A, Polman A 2015 Science 348 516 Google Scholar
[12]	Powell K, Wang J, Shams-Ansari A, Liao B K, Meng D B, Sinclair N, Li L W, Deng J D, Lončar M, Yi X K 2022 Opt. Express 30 34149 Google Scholar
[13]	Peng Y X, Xu J, Dong H, Dai X Y, Jiang J, Qian S Y, Jiang L Y 2020 Opt. Express 28 34948 Google Scholar
[14]	Atorf B, Muehlenbernd H, Zentgraf T, Kitzerow H 2020 Opt. Express 28 8898 Google Scholar
[15]	Vassant S, Hugonin J-P, Marquier F, Greffet J-J 2012 Opt. Express 20 23971 Google Scholar
[16]	Hendrickson J R, Vangala S, Dass C, Gibson R, Goldsmith J, Leedy K, Walker Jr D E, Cleary J W, Kim W, Guo J 2018 ACS Photonics 5 776 Google Scholar
[17]	郭绮琪, 陈溢杭 2021 物理学报 70 187303 Google Scholar Guo Q Q, Chen Y H 2021 Acta Phys. Sin. 70 187303 Google Scholar
[18]	Campione S, Brener I, Marquier F 2015 Phys. Rev. B 91 121408 Google Scholar
[19]	Vassant S, Archambault A, Marquier F, Pardo F, Gennser U, Cavanna A, Pelouard J L, Greffet J J 2012 Phys. Rev. Lett. 109 237401 Google Scholar
[20]	Kim M, Kim S, Kim S 2019 Sci. Rep. 9 6552 Google Scholar
[21]	Wang R, Hu F, Meng Y T, Gong M, Liu Q L 2023 Opt. Lett. 48 1371 Google Scholar
[22]	Xu J, Peng Y X, Jiang J, Qian S Y, Jiang L Y 2023 Opt. Lett. 48 3235 Google Scholar
[23]	Ding F, Yang Y, Deshpande R A, Bozhevolnyi S I 2018 Nanophotonics 7 1129 Google Scholar
[24]	Gramotnev D K, Bozhevolnyi S I 2010 Nat. Photonics 4 83 Google Scholar
[25]	Chen L, Shakya J, Lipson M 2006 Opt. Lett. 31 2133 Google Scholar
[26]	Sanchis P, Blasco J, Martínez A, Martí J 2007 J. Lightwave Technol. 25 1298 Google Scholar
[27]	郭道友, 李培刚, 陈政委, 吴真平, 唐为华 2019 物理学报 68 078501 Google Scholar Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H 2019 Acta Phys. Sin. 68 078501 Google Scholar
[28]	Ji X Q, Liu M Y, Yan Z Y, Li S, Liu Z, Qi X H, Yuan J Y, Wang J J, Zhao Y C, Tang W H 2023 IEEE Trans. Electron Devices 70 4236 Google Scholar
[29]	董典萌, 汪成, 张清怡, 张涛, 杨永涛, 夏翰驰, 王月晖, 吴真平 2023 物理学报 72 097302 Google Scholar Dong D M, Wang C, Zhang Q Y, Zhang T, Yang Y T, Xia H C, Wang Y H, Wu Z P 2023 Acta Phys. Sin. 72 097302 Google Scholar
[30]	Wang J J, Ji X Q, Yan Z Y, Yan X, Lu C, Li Z T, Qi S, Li S, Qi X H, Zhang S R 2023 Mater. Sci. Semicond. Process. 159 107372 Google Scholar
[31]	Ji X Q, Lu C, Yan Z Y, Shan L, Yan X, Wang J J, Yue J Y, Qi X H, Liu Z, Tang W H, Li P G 2022 J. Phys. D: Appl. Phys. 55 443002
[32]	Guo B, Zhang Z S, Huo Y Y, Wang S Y, Ning T Y 2023 Chin. Opt. Lett. 21 013602 Google Scholar
[33]	De Leonardis F, Soref R A, Passaro V M N 2017 Sci. Rep. 7 40924 Google Scholar
[34]	Borshch A, Brodyn M, Volkov V I, Rudenko V I, Lyakhovetskii V, Semenov V, Puzikov V 2008 JETP Lett. 88 386 Google Scholar
[35]	Brodyn M, Volkov V, Lyakhovetskii V, Rudenko V, Puzilkov V, Semenov A 2012 J. Exp. Theor. Phys. 114 205 Google Scholar
[36]	Johnson P B, Christy R W 1972 Phys. Rev. B 6 4370 Google Scholar
[37]	Larruquert J I, PérezMarín A P, García Cortés S, Rodríguez de Marcos L, Aznárez J A, Méndez J A 2011 JOSA A 28 2340 Google Scholar
[38]	Silvester P P, Ferrari R L 1996 Finite Elements for Electrical Engineers (Cambridge University Press
[39]	Jin J M 2015 The Finite Element Method in Electromagnetics (John Wiley & Sons
[40]	Lu J, Thiel D V 2000 IEEE Trans. Magn. 36 1000 Google Scholar
[41]	Selleri S 2003 IEEE Antennas Propag. Mag. 45 86 Google Scholar
[42]	Bhaumik I, Bhatt R, Ganesamoorthy S, Saxena A, Karnal A, Gupta P, Sinha A, Deb S 2011 Appl. Opt. 50 6006 Google Scholar
[43]	Pearton S, Yang J, Cary P H, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301 Google Scholar
[44]	Gosciniak J, Hu Z, Thomaschewski M, Sorger V J, Khurgin J B 2023 Laser Photonics Rev. 17 2200723 Google Scholar

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Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga₂O₃-SiC-Ag multilayer structures

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Corresponding author: Zhang Tian-Yue, tianyue_zhang@bupt.edu.cn ; Li Pei-Gang, pgli@bupt.edu.cn

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Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga2O3-SiC-Ag multilayer structures

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Corresponding author: Zhang Tian-Yue, tianyue_zhang@bupt.edu.cn ; Li Pei-Gang, pgli@bupt.edu.cn

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Ultralow switching threshold optical bistable devices based on epsilon-near-zero Ga₂O₃-SiC-Ag multilayer structures