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During the study of resistive switching devices, researchers have found that the influence of the insertion layer cannot be ignored. Many reports have confirmed that the appropriate insertion layer can significantly improve the performance of the resistive switching devices. Therefore, in this work, we use magnetron sputtering to fabricate three devices: Cu/MgO/Cu, Cu/MgO/MoS2/Cu and Cu/MoS2/MgO/Cu. Through the characterization test of each device and the measurement of the I-V curve, it is found that the resistive switching characteristics of the Cu/MgO/Cu device will change greatly after adding an MoS2 insertion layer. The analysis results show that the inserted MoS2 layer does not change the main transmission mechanism (space charge limited conduction) of the device, but affects the regulating function of interfacial potential barrier, the effect also is relatedto the location of MoS2 inserted into the layer. Among the Cu/MgO/Cu, Cu/MgO/MoS2/Cu and Cu/MoS2/MgO/Cu devices, the Cu/MgO/MoS2/Cu device exhibits a larger switching ratio (about 103) and a lower reset voltage (about 0.21 V), which can be attributed to the regulation of the interface barrier between MgO and MoS2. In addition, when the MoS2 layer is inserted between the bottom electrodes Cu and MgO, the leakage current of the device is significantly reduced. Therefore, Cu/MoS2/MgO/Cu device has the highest commercial value from the point of view of practical applications. Finally, according to the XPS results and XRD results, we establish the conductive filament models for the three devices, and analyze the reasons for the different resistive switching characteristics of the three devices.
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图 1 器件结构示意图及XRD图谱 (a) Cu/MgO/Cu的结构; (b) Cu/MoS2/MgO/Cu的结构; (c) Cu/MgO/MoS2/Cu的结构; (d) MgO/MoS2/Cu的XRD图谱
Figure 1. Structure diagram and XRD pattern of device: (a) Structure of Cu/MgO/Cu; (b) structure of Cu/MoS2/MgO/Cu; (c) structure of Cu/MgO/MoS2/Cu; (d) XRD pattern of MgO/MoS2/Cu.
图 2 器件的XPS谱图 (a) Cu的俄歇电子谱; (b) Cu 2p的XPS谱图; (c) Mg 1s的XPS谱图; (d) O 1s的XPS谱图
Figure 2. XPS spectra of the device: (a) AES of Cu; (b) XPS spectrum of Cu 2p; (c) XPS spectrum of Mg 1s; (d) XPS spectrum of O 1s.
图 3 半对数坐标下三种器件的I-V循环轨迹图 (a) Cu/MgO/Cu的多循环曲线; (b) Cu/MgO/Cu的单循环曲线; (c) Cu/MoS2/MgO/Cu的多循环曲线; (d) Cu/MoS2/MgO/Cu的单循环曲线; (e) Cu/MgO/MoS2/Cu的多循环曲线; (f) Cu/MgO/MoS2/Cu的单循环曲线
Figure 3. I-V cycle trajectories of the three devices in semilog coordinates: (a) Multiple cycle curves of Cu/MgO/Cu; (b) single cycle curve of Cu/MgO/Cu; (c) multiple cycle curves of Cu/MoS2/MgO/Cu; (d) single cycle curve of Cu/MoS2/MgO/Cu; (e) multiple cycle curves of Cu/MgO/MoS2/Cu; (f) single cycle curve of Cu/MgO/MoS2/Cu.
图 4 半对数坐标下三种器件的单循环对比图
Figure 4. Single cycle comparison diagram of the three devices in semilog coordinates.
图 5 三种器件的VReset和VSet累计概率分布图 (a) Cu/MgO/Cu; (b) Cu/MoS2/MgO/Cu; (c) Cu/MgO/MoS2/Cu
Figure 5. Cumulative probability distribution of VReset and VSet for the three devices: (a) Cu/MgO/Cu; (b) Cu/MoS2/MgO/Cu; (c) Cu/MgO/MoS2/Cu.
图 6 三种器件的高低阻态分布图 (a) Cu/MgO/Cu; (b) Cu/MoS2/MgO/Cu; (c) Cu/MgO/MoS2/Cu
Figure 6. HRS and LRS distribution of the three devices: (a) Cu/MgO/Cu; (b) Cu/MoS2/MgO/Cu; (c) Cu/MgO/MoS2/Cu.
图 7 双对数坐标下三种器件的I-V曲线拟合图 (a) 正电压下Cu/MgO/Cu的拟合曲线; (b) 负电压下Cu/MgO/Cu的拟合曲线; (c) 正电压下Cu/MoS2/MgO/Cu的拟合曲线; (d) 负电压下Cu/MoS2/MgO/Cu的拟合曲线; (e) 正电压下Cu/MgO/MoS2/Cu的拟合曲线; (f) 负电压下Cu/MgO/MoS2/Cu的拟合曲线
Figure 7. I-V curves fitting diagram of the three devices in double logarithm coordinates: (a) Fitted curve of Cu/MgO/Cu at positive voltage; (b) fitted curve of Cu/MgO/Cu at negative voltage; (c) fitted curve of Cu/MoS2/MgO/Cu at positive voltage; (d) fitted curve of Cu/MoS2/MgO/Cu at negative voltage; (e) fitted curve of Cu/MgO/MoS2/Cu at positive voltage; (f) fitted curve of Cu/MgO/MoS2/Cu at negative voltage.
图 8 三种器件的机理解释示意图 (a) Cu/MgO/Cu的reset过程; (b) Cu/MgO/Cu的set过程; (c) Cu/MoS2/MgO/Cu的reset过程; (d) Cu/MoS2/MgO/Cu的set过程; (e) Cu/MgO/MoS2/Cu的reset过程; (f) Cu/MgO/MoS2/Cu的set过程
Figure 8. Schematic diagram of the mechanism explanation of the three devices: (a) Reset process of Cu/MgO/Cu; (b) set process of Cu/MgO/Cu; (c) reset process of Cu/MoS2/MgO/Cu; (d) set process of Cu/MoS2/MgO/Cu; (e) reset process of Cu/MgO/MoS2/Cu; (f) set process of Cu/MgO/MoS2/Cu.
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