Fabrication of n-i-p perovskite solar cells based on strategy of buried interface modification

SHANG Wenli; WANG Likun; ZHANG Xiaochun; YUE Xin; LI Yifeng; WAN Zhenghui; YANG Huayi; LI Ting; WANG Hui

doi:10.7498/aps.74.20241549

Abstract

Normal (n-i-p) perovskite solar cells (PSCs) have received increasing attention due to their advantages such as high conversion efficiency and good stability. Tin dioxide is an ideal electron transport layer material for normal perovskite solar cells. Among various available electron transport layers, tin dioxide stands out because of its excellent stability, low density of defect states, and appropriate energy levels. The interface defects between tin dioxide and perovskite are the key factors restricting the improvement of the conversion efficiency in perovskite solar cells. Therefore, a method of fabricating normal perovskite solar cells based on the buried interface modification strategy is proposed in this work. By doping methylammonium bromide into tin dioxide to form a buried interface, the interface defects between tin dioxide and perovskite are reduced, the electron mobility of tin dioxide is enhanced, and the growth of high-quality perovskite materials is promoted. The conversion efficiency of the normal perovskite solar cells reaches 23.12%, providing an effective strategy for fabricating high-efficiency normal perovskite solar cells.

Keywords:

Authors and contacts

1.
School of Physics and Electronic Techonlogy, Liaoning Normal Unversity, Dalian 116029, China
2.
School of Microelectronics, Xidian University, Xi’an 710071, China
3.
Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
4.
Experimental Training Center, Dalian University of Science and Technology, Dalian 116025, China

Corresponding author: LI Ting, tingli430@lnnu.edu.cn ; WANG Hui, hwang1606@dicp.ac.cn

Funds: Project supported by the Doctor Foundation of Science and Technology Department of Liaoning Province, China (Grant No. 2021-BS-200).

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References

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Cited By

图 1 SnO₂的XPS光谱　(a)未修饰样品(红线)和埋底界面修饰样品(蓝线)的Sn 3d; (b)未修饰样品(红线)和埋底界面修饰样品(蓝线)的O 1s; (c)未修饰样品Sn 3d的拟合光谱; (d)未修饰样品O 1s的拟合光谱; (e) 埋底界面修饰样品Sn 3d的拟合光谱; (f) 埋底界面修饰样品O 1s的拟合光谱

Figure 1. XPS spectra of SnO₂: (a) Sn 3d for unmodified samples (red line) and buried interface modified samples (blue line); (b) O 1s for unmodified samples (red line) and buried interface modified samples (blue line); (c) fitting spectra of Sn 3d for unmodified samples; (d) fitting spectra of O 1s for unmodified samples; (e) fitting spectra of Sn 3d for buried interface modified samples; (f) fitting spectra of O 1s for buried interface modified samples.

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图 2 (a) SnO₂薄膜的电子迁移率; (b) 未修饰样品(红线)和埋底界面修饰样品(蓝线) SnO₂的透过率光谱

Figure 2. (a) Electron mobility of SnO₂ films; (b) transmission spectra of SnO₂ for unmodified samples (red line) and buried interface modified samples (blue line).

DownLoad: Full-Size Img PowerPoint

图 3 SnO₂薄膜的SEM图　(a)未修饰样品, (b)埋底界面修饰样品; SnO₂薄膜的AFM图　(c)未修饰样品, (d)埋底界面修饰样品; SnO₂薄膜的水接触角图　(e)未修饰样品, (f)埋底界面修饰样品

Figure 3. SEM images of SnO₂ films for (a) unmodified samples, (b) buried interface modified samples; AFM images of SnO₂ films for (c) unmodified samples, (d) buried interface modified samples; water contact angle images of SnO₂ films for (e) unmodified samples, (f) buried interface modified samples.

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图 4 钙钛矿薄膜的SEM图　(a)未修饰样品; (b)埋底界面修饰样品; (c)钙钛矿薄膜晶粒尺寸数量分布柱状图

Figure 4. SEM images of perovskite films: (a) Unmodified samples; (b) buried interface modified samples; (c) histogram of grain size distribution in perovskite thin films.

DownLoad: Full-Size Img PowerPoint

图 5 钙钛矿薄膜的AFM图, 其中(a)未修饰样品, (b)埋底界面修饰样品; 钙钛矿薄膜的水接触角图, 其中(c)未修饰样品, (d)埋底界面修饰样品

Figure 5. AFM images of perovskite films for (a) unmodified samples, (b) buried interface modified samples; water contact angle images of perovskite thin films for (c) unmodified samples, (d) buried interface modified samples.

DownLoad: Full-Size Img PowerPoint

图 6 未修饰样品(红线)和埋底界面修饰样品(蓝线)的XRD图和(001)晶相的放大图

Figure 6. XRD patterns of unmodified samples (red line), buried interface modified samples (blue line), and enlarged images of the (001) crystal phase.

DownLoad: Full-Size Img PowerPoint

图 7 钙钛矿薄膜的(a) PL图谱和(b) TRPL图谱, 其中红线为未修饰样品, 蓝线为埋底界面修饰样品

Figure 7. (a) PL spectra and (b) TRPL spectra of unmodified samples (red line) and buried interface modified samples (blue line).

DownLoad: Full-Size Img PowerPoint

图 8 未修饰样品(红线)和埋底界面修饰样品(蓝线)的SCLC曲线

Figure 8. SCLC curves of unmodified samples (red line) and buried interface modified samples (blue line).

DownLoad: Full-Size Img PowerPoint

图 9 钙钛矿电池　(a) 正向和反向扫描的J-V曲线; (b) PCE箱线图; (c) V_OC箱线图; (d) J_SC箱线图; (e) FF箱线图; (f) V_OC随光强变化曲线图; (g) EQE曲线图; (h) 莫特-肖特基曲线

Figure 9. Perovskite solar cells: (a) J-V curves for forward and reverse scans; (b) box plot of PCE; (c) box plot of V_OC; (d) box plot of J_SC; (e) box plot of FF; (f) curves of V_OC varying with light intensity; (g) EQE curves; (h) Mott-Schottky curves.

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表 1 未修饰样品钙钛矿薄膜; 埋底界面修饰样品的钙钛矿薄膜的TRPL光谱拟合参数

Table 1. TRPL spectral fitting parameters for unmodified perovskite film samples and buried interface modified perovskite film samples.

	$ \tau $₁/ns	A₁	$ \tau $₂/ns	A₂	T_average/ns
Glass/FTO/SnO₂/PVK	20.83	430.0	229.93	1.31	27.63
Glass/FTO/SnO₂+MABr/PVK	16.62	3165.42	243.48	1.24	17.91

DownLoad: CSV

表 2 钙钛矿太阳能电池参数

Table 2. Parameters of Perovskite Solar Cells.

Devices		V_OC/V	J_sc/(mA·cm^–2)	FF/%	PCE/%
glass/FTO/SnO₂/PVK/Spiro-OMeTAD/Au	Forward	1.09	25.67	63.88	17.70
glass/FTO/SnO₂/PVK/Spiro-OMeTAD/Au	Reverse	1.11	25.96	75.08	21.57
glass/FTO/SnO₂+MABr/PVK/Spiro-OMeTAD/Au	Forward	1.12	25.84	77.78	22.56
glass/FTO/SnO₂+MABr/PVK/Spiro-OMeTAD/Au	Reverse	1.12	25.80	79.90	23.12

DownLoad: CSV

[1]	Zhang Y Q, Liu X T, Li P W, Duan Y Y, Hu X T, Li F Y, Song Y L 2019 Nano Energy 56 733 Google Scholar
[2]	Liang C, Li P W, Zhang Y Q, Gu H, Cai Q B, Liu X T, Wang J F, Wen H, Shao G S 2017 J. Power Sources 372 235 Google Scholar
[3]	Yang S M, Wen J L, Liu Z K, Che Y H, Xu J, Wang J G, Xu D F, Yuan N Y, Ding J N, Duan Y W, Liu S Z 2021 Adv. Energy Mater. 12 2103019 Google Scholar
[4]	Bu T L, Li J, Zheng F, Chen W J, Wen X M, Ku Z L, Peng Y, Zhong J, Cheng Y B, Huang F Z 2018 Nat. Commun. 9 4609 Google Scholar
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[7]	Yang Y G, Lu H Z, Feng S L, Yang L F, Dong H, Wang J O, Tian C, Li L N, Lu H L, Jeong J, Zakeeruddin S M, Liu Y H, Grätzel M, Hagfeldt A 2021 Energy Environ. Sci. 14 3447 Google Scholar
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[10]	Zhang Z A, Jiang J K, Liu X, Wang X, Wang L Y, Qiu Y K, Zhang Z F, Zheng Y T, Wu X Y, Liang J H, Tian C C, Chen C C, 2021 Small 18 2105184 Google Scholar
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[12]	Jung E H, Chen B, Bertens K, Vafaie M, Teale S, Proppe A, Hou Y, Zhu T, Zheng C, Sargent E H 2020 ACS Energy Lett. 5 2796 Google Scholar
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[14]	Park S Y, Zhu K 2022 Adv. Mater. 34 2110438 Google Scholar
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[16]	Yang L, Feng J S, Liu Z K, Duan Y W, Zhan S, Yang S M, He K, Li Y, Zhou Y W, Yuan N Y, Ding J N, Liu S Z 2022 Adv. Mater. 34 2201681 Google Scholar
[17]	Osman M B S, Dessouky A Z M T, Kenawy M A, El-Sharkawy A A 1996 J. Therm. Anal. 46 1697 Google Scholar
[18]	Yu H, Yeom H I, Lee J W, Lee K, Hwang D, Yun J, Ryu J, Lee J, Bae S, Kim S K, Jang J 2018 Adv. Mater. 30 1704825 Google Scholar
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[21]	Liu C, Cheng Y B, Ge Z 2020 Chem. Soc. Rev. 49 1653 Google Scholar
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[23]	Wang H Y, Xu H J, Wu S H, Wang Y, Wang Y, Wang X H, Liu X D, Huang P 2023 Chem. Eng. J. 476 146587 Google Scholar
[24]	Li Y, Zheng J L, Chen X L, Sun C, Jiang H, Li G R, Zhang X Y 2021 J. Alloys Compd. 886 161300 Google Scholar
[25]	Yang S M, Liu W D, Han Y, Liu Z K, Zhao W J, Duan C Y, Che Y H, Gu H S, Li Y B, Liu S Z 2020 Adv. Energy Mater. 10 2002882 Google Scholar
[26]	Li Z, Sun X L, Zheng X P, Li B, Gao D P, Zhang S F, Wu X W, Li S, Gong J Q, Luther J M , Li Z A, Zhu Z L 2023 Science 382 284 Google Scholar
[27]	Ji X F, Bi L Y, Fu Q, Li B L, Wang J W, Jeong S Y, Feng K, Ma S X, Liao Q G, Lin F R, Woo H Y, Lu L F, Jen A K Y, Guo X G 2023 Adv. Mater. 35 2303665 Google Scholar
[28]	Heo J, Lee S W, Yong J, Park H, Lee Y K, Shin J, Whang D R, Chang D W, Park H J 2023 Chem. Eng. J. 474 145632 Google Scholar

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