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Mask defects characterization techniques based on synchrotron radiation extreme ultraviolet light source

ZHANG Zhihe LIU Haigang WANG Yong TAI Renzhong

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Mask defects characterization techniques based on synchrotron radiation extreme ultraviolet light source

ZHANG Zhihe, LIU Haigang, WANG Yong, TAI Renzhong
cstr: 32037.14.aps.74.20250864
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  • The multilayer structure of extreme ultraviolet (EUV) masks limits the penetration depth of traditional inspection techniques at non-working wavelengths, thus hindering the effective examination of buried phase defects. Developing defect characterization techniques operating at the 13.5 nm wavelength is crucial for overcoming the quality bottleneck in EUV mask fabrication. Synchrotron radiation light source, with their stable EUV wavelength, cleanliness, and high power density, represents an ideal light source for EUV mask defect characterization research. In this work the current state of technology development for mask characterization at the world's four major synchrotron radiation facilities are systematically reviewed. Through comparative analysis, their working principles, technical advantages, and limitations are investigated in depth, and provide a forward-looking discussion on future trends. In response to the specific requirements for EUV mask defect detection and review, this paper discusses the requirements for the next-generation system platform, which integrates deep detection and review functions, develops novel compact light sources, and innovatively combines the advantages of various imaging techniques to improve the numerical aperture (NA) of imaging systems. This aims to achieve a theoretical resolution of over 20 nm, meeting the future demands of the EUV lithography industry for higher NA (>0.55) and shorter wavelengths (6.7 nm). Regarding the prospects of extending synchrotron radiation to industrial applications, a compact synchrotron radiation source, which can be developed on-site in semiconductor facilities, is introduced to accelerate the research and development cycle, while achieving the synergistic integration of imaging technologies. This paper focuses on the application of phase recovery principle of ptychography to Fourier synthesis illumination (FSI), achieving aberration correction in lens-based systems through synthetic aperture extension. In this paper, the working principles, performance benchmarks, technical challenges, and emerging development trends of existing synchrotron radiation-based EUV mask characterization techniques are investigated. It provides an important reference for designing next-generation EUV mask characterization system platforms.
      Corresponding author: LIU Haigang, liuhg@sari.ac.cn ; WANG Yong, wangyong@sari.ac.cn ; TAI Renzhong, tairz@sari.ac.cn
    • Funds: Project supported by the National Basic Research Program of China (Grant No. 2021YFA1601000) and the National Natural Science Foundation of China (Grant No. 12175297).
    [1]

    Sivakumar S 2011 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011) Hongkong, China, January 25–28, 2011 p402

    [2]

    刘海岗, 孟祥雨, 张祥志, 赵波, 赵俊, 郭智, 吴衍青, 王勇, 邰仁忠 2024 中国专利CN117890382A [2024-4-16]]

    Liu H G, Meng X Y, Zhang X Z, Zhao B, Zhao J, Guo Z, Wu Y Q, Wang Y, Tai RZ 2024 Patent CN117890382A [2024-4-16]

    [3]

    苏子净, 刘海岗, 孟祥雨, 张祥志, 赵波, 郭智, 王勇, 邰仁忠 2025 核技术 48 030102

    Su Z J, Liu H G, Meng X Y, Zhang X Z, Zhao B, Guo Z, Wang Y, Tai R Z 2025 Nucl. Tech. 48 030102

    [4]

    崔明启, 王俊, 缪建伟, 黄宇营, 唐鄂生, 冼鼎昌, 邵景鸿, 薛松, 徐正良, 孙剑辉 1995 高能物理与核物理 19 82

    Cui M Q, Wang J, Miao J W, Huang Y Y, Tang E S, Xian D C, Shao J H, Xue S, Xu Z L, Sun J H 1995 High Energy Phys. Nucl. Phys. 19 82

    [5]

    Ko J H, Kim M W, Lee S, Han J H, Hong J 2024 J. Korean Phys. Soc. 84 189Google Scholar

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    Bergmann R M, Bieri T, Craievich P, Ekinci T G, Gough M N, Rivkin C R, Schulz T S, Stingelin A S, Wrulich V V A, Callegher A Z, Zennaro R 2017 13th International Topical Meeting on the Applications of Accelerators Quebec, Cnanda, July 31–August 4, 2017 p217

    [7]

    Rastegar A, Jindal V 2012 28th European Mask and Lithography Conference (EMLC 2012) Dresden, Germany, January 17–18, 2012 p83520W

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    Pfeiffer F 2018 Nat. Photonics 12 9Google Scholar

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    Miyai H, Kohyama T, Todoroki T 2021 Photomask Japan 2021 Japan, April 20–21, 2021 p119080H

    [10]

    Gwosch K, Capelli R, Roesch M, Nicholls R, Langbehn B, Mohn M, Verch A, Albert M, Kersteen G, Winkler A, Müller C, Krannich S 2023 SPIE Photomask Technology + Extreme Ultraviolet Lithography 2023 Monterey, California, USA, October 1–5, 2023 pPC127500O

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    赵红军, 李昊罡, 颜亮, 李川 2016 网络安全与数据治理 35 8Google Scholar

    Zhao H J, Li H G, Yan L, Li C 2016 Cyber Secur. Data Govern. 35 8Google Scholar

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    Spie Photomask Technology V, International B 2015 SPIE Photomask Technology Monterey, California, USA, September 29–October 1, 2015 p271

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    Lin J, Weber N, Maul J, Hendel S, Rott K, Merkel M, Schoenhense G, Kleineberg U 2007 Opt. Lett. 32 1875Google Scholar

    [14]

    李慧, 吴晓斌, 韩晓泉, 马赫, 沙鹏飞 2023 中国激光 50 113

    Li H, Wu X B, Han X Q, Ma H, Sha P F 2023 Chin. J. Lasers 50 113

    [15]

    Yang L, Ma Z, Liu S, Jiao Q, Zhang J, Zhang W, Pei J, Li H, Li Y, Zou Y, Xu Y, Tan X 2022 Sensors 22 1113Google Scholar

    [16]

    García-Escudero A, Navarro-Bustos G, Umbría-Jiménez S, González-Cámpora R, Galera-Davidson H 2017 Rev. Soc. Esp. Quim. Clin. 50 113

    [17]

    Goldberg K, Mochi I, Benk M, Allezy A, Dickinson M, Cork C, Zehm D, Macdougall J, Anderson E, Salmassi F, Chao W, Vytla V, Gullikson E, DePonte J, Jones M S G, Van Camp D, Gamsby J, Ghiorso W, Huang H, Cork W, Martin E, Van Every E, Acome E, Milanovic V, Delano R, Naulleau P, Rekawa S 2013 SPIE Advanced Lithography San Jose, California, February 24–28, 2013 p867919

    [18]

    潘新宇, 毕筱雪, 董政, 耿直, 徐晗, 张一, 董宇辉, 张承龙 2023 物理学报 72 054202Google Scholar

    Pan X Y, Bi X X, Dong Z, Geng Z, Xu H, Zhang Y, Dong Y H, Zhang C L 2023 Acta Phys. Sin. 72 054202Google Scholar

    [19]

    范家东, 江怀东 2012 物理学报 61 218702Google Scholar

    Fan J D, Jiang H D 2012 Acta Phys. Sin. 61 218702Google Scholar

    [20]

    Lee S, Guizar-Sicairos M, Ekinci Y 2014 SPIE Advanced Lithography San Jose, California, February 23–27, 2014 p904811–1

    [21]

    Wojdyla A, Benk M, Naulleau P, Goldberg K 2018 Image Sensing Technologies: Materials, Devices, Systems, and Applications V Gaylord Palms Hotel, Orlando, April 16–19, 2018 p106560W

    [22]

    Mochi I, Helfenstein P, Mohacsi I, Rajendran R, Kazazis D, Yoshitake S, Ekinci Y 2017 J. Micro/Nanolithogr. , MEMS, MOEMS 16 041003Google Scholar

    [23]

    Tanaka Y, Harada T, Amano T, Usui Y, Watanabe T, Kinoshita H 2014 Jpn. J. Appl. Phys. 53 06JC03Google Scholar

    [24]

    Miyakawa R, and Naulleau P 2019 Synchrotron Radiat. News 32 15

    [25]

    Benk M, Wojdyla A, Chao W, Salmassi F, Oh S, Wang Y-G, Miyakawa R, Naulleau P, Goldberg K 2016 SPIE Advanced Lithography San Jose, California, February 21–25, 2016 p97761J–1

    [26]

    Goldberg K, Benk M, Wojdyla A, Mochi I, Rekawa S, Allezy A, Dickinson M, Cork C, Chao W, Zehm D, Macdougall J, Naulleau P, Rudack A 2014 SPIE Advanced Lithography San Jose, California, February 23–27, 2014 p90480Y–1

    [27]

    Li X L, Meng X Y, Wang Y, Liu H G, Zhang Y F, Zhang X Z, Zhao B, Zhao J, Tai R Z 2025 Phys. Scr. 100 045533Google Scholar

    [28]

    Simons H, Poulsen H F, Guigay J P, Detlefs C 2016 arXiv: 1609.07513 [physics.ins-det]

    [29]

    Wakonig K, Diaz A, Bonnin A, Stampanoni M, Bergamaschi A, Ihli J, Guizar-Sicairos M, Menzel A 2019 Sci. Adv. 5 eaav0282Google Scholar

  • 图 1  EUV掩模结构及典型缺陷

    Figure 1.  EUV mask structure and typical defects.

    图 2  (a) 傅里叶合成照明光路图及照明模式样例; (b) SHARP的光路设计[17]; (c) SSRF-BL09B1A的光路设计

    Figure 2.  (a) Schematic optical layout of FSI and representative illumination patterns; (b) optical path design of SHARP[17]; (c) optical path design of SSRF-BL09B1A.

    图 3  (a) RESCAN的光路设计[22]; (b) Micro-CSM的光路设计[23]

    Figure 3.  (a) Optical path design of RESCAN[22]; (b) optical path design of Micro-CSM[23].

    表 1  国际知名同步辐射光源与表征设备对比

    Table 1.  Comparison of internationally renowned synchrotron radiation sources and characterization equipment.

    光源ALSSLSNew
    SUBARU
    SSRF
    平台SHARPRESCANMicro-
    CSM
    SSRF-
    BL09B1A
    功能分析在线检测+
    分析
    分析在线检测+
    分析
    成像技术全场
    成像
    叠层衍射
    成像
    相干衍射
    成像
    全场
    成像
    92 eV能量分辨
    率(EE)
    10–44%13001000—8000
    光斑直径/μm30100.23>25
    分辨率/nm22343020(设计)
    DownLoad: CSV
  • [1]

    Sivakumar S 2011 16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011) Hongkong, China, January 25–28, 2011 p402

    [2]

    刘海岗, 孟祥雨, 张祥志, 赵波, 赵俊, 郭智, 吴衍青, 王勇, 邰仁忠 2024 中国专利CN117890382A [2024-4-16]]

    Liu H G, Meng X Y, Zhang X Z, Zhao B, Zhao J, Guo Z, Wu Y Q, Wang Y, Tai RZ 2024 Patent CN117890382A [2024-4-16]

    [3]

    苏子净, 刘海岗, 孟祥雨, 张祥志, 赵波, 郭智, 王勇, 邰仁忠 2025 核技术 48 030102

    Su Z J, Liu H G, Meng X Y, Zhang X Z, Zhao B, Guo Z, Wang Y, Tai R Z 2025 Nucl. Tech. 48 030102

    [4]

    崔明启, 王俊, 缪建伟, 黄宇营, 唐鄂生, 冼鼎昌, 邵景鸿, 薛松, 徐正良, 孙剑辉 1995 高能物理与核物理 19 82

    Cui M Q, Wang J, Miao J W, Huang Y Y, Tang E S, Xian D C, Shao J H, Xue S, Xu Z L, Sun J H 1995 High Energy Phys. Nucl. Phys. 19 82

    [5]

    Ko J H, Kim M W, Lee S, Han J H, Hong J 2024 J. Korean Phys. Soc. 84 189Google Scholar

    [6]

    Bergmann R M, Bieri T, Craievich P, Ekinci T G, Gough M N, Rivkin C R, Schulz T S, Stingelin A S, Wrulich V V A, Callegher A Z, Zennaro R 2017 13th International Topical Meeting on the Applications of Accelerators Quebec, Cnanda, July 31–August 4, 2017 p217

    [7]

    Rastegar A, Jindal V 2012 28th European Mask and Lithography Conference (EMLC 2012) Dresden, Germany, January 17–18, 2012 p83520W

    [8]

    Pfeiffer F 2018 Nat. Photonics 12 9Google Scholar

    [9]

    Miyai H, Kohyama T, Todoroki T 2021 Photomask Japan 2021 Japan, April 20–21, 2021 p119080H

    [10]

    Gwosch K, Capelli R, Roesch M, Nicholls R, Langbehn B, Mohn M, Verch A, Albert M, Kersteen G, Winkler A, Müller C, Krannich S 2023 SPIE Photomask Technology + Extreme Ultraviolet Lithography 2023 Monterey, California, USA, October 1–5, 2023 pPC127500O

    [11]

    赵红军, 李昊罡, 颜亮, 李川 2016 网络安全与数据治理 35 8Google Scholar

    Zhao H J, Li H G, Yan L, Li C 2016 Cyber Secur. Data Govern. 35 8Google Scholar

    [12]

    Spie Photomask Technology V, International B 2015 SPIE Photomask Technology Monterey, California, USA, September 29–October 1, 2015 p271

    [13]

    Lin J, Weber N, Maul J, Hendel S, Rott K, Merkel M, Schoenhense G, Kleineberg U 2007 Opt. Lett. 32 1875Google Scholar

    [14]

    李慧, 吴晓斌, 韩晓泉, 马赫, 沙鹏飞 2023 中国激光 50 113

    Li H, Wu X B, Han X Q, Ma H, Sha P F 2023 Chin. J. Lasers 50 113

    [15]

    Yang L, Ma Z, Liu S, Jiao Q, Zhang J, Zhang W, Pei J, Li H, Li Y, Zou Y, Xu Y, Tan X 2022 Sensors 22 1113Google Scholar

    [16]

    García-Escudero A, Navarro-Bustos G, Umbría-Jiménez S, González-Cámpora R, Galera-Davidson H 2017 Rev. Soc. Esp. Quim. Clin. 50 113

    [17]

    Goldberg K, Mochi I, Benk M, Allezy A, Dickinson M, Cork C, Zehm D, Macdougall J, Anderson E, Salmassi F, Chao W, Vytla V, Gullikson E, DePonte J, Jones M S G, Van Camp D, Gamsby J, Ghiorso W, Huang H, Cork W, Martin E, Van Every E, Acome E, Milanovic V, Delano R, Naulleau P, Rekawa S 2013 SPIE Advanced Lithography San Jose, California, February 24–28, 2013 p867919

    [18]

    潘新宇, 毕筱雪, 董政, 耿直, 徐晗, 张一, 董宇辉, 张承龙 2023 物理学报 72 054202Google Scholar

    Pan X Y, Bi X X, Dong Z, Geng Z, Xu H, Zhang Y, Dong Y H, Zhang C L 2023 Acta Phys. Sin. 72 054202Google Scholar

    [19]

    范家东, 江怀东 2012 物理学报 61 218702Google Scholar

    Fan J D, Jiang H D 2012 Acta Phys. Sin. 61 218702Google Scholar

    [20]

    Lee S, Guizar-Sicairos M, Ekinci Y 2014 SPIE Advanced Lithography San Jose, California, February 23–27, 2014 p904811–1

    [21]

    Wojdyla A, Benk M, Naulleau P, Goldberg K 2018 Image Sensing Technologies: Materials, Devices, Systems, and Applications V Gaylord Palms Hotel, Orlando, April 16–19, 2018 p106560W

    [22]

    Mochi I, Helfenstein P, Mohacsi I, Rajendran R, Kazazis D, Yoshitake S, Ekinci Y 2017 J. Micro/Nanolithogr. , MEMS, MOEMS 16 041003Google Scholar

    [23]

    Tanaka Y, Harada T, Amano T, Usui Y, Watanabe T, Kinoshita H 2014 Jpn. J. Appl. Phys. 53 06JC03Google Scholar

    [24]

    Miyakawa R, and Naulleau P 2019 Synchrotron Radiat. News 32 15

    [25]

    Benk M, Wojdyla A, Chao W, Salmassi F, Oh S, Wang Y-G, Miyakawa R, Naulleau P, Goldberg K 2016 SPIE Advanced Lithography San Jose, California, February 21–25, 2016 p97761J–1

    [26]

    Goldberg K, Benk M, Wojdyla A, Mochi I, Rekawa S, Allezy A, Dickinson M, Cork C, Chao W, Zehm D, Macdougall J, Naulleau P, Rudack A 2014 SPIE Advanced Lithography San Jose, California, February 23–27, 2014 p90480Y–1

    [27]

    Li X L, Meng X Y, Wang Y, Liu H G, Zhang Y F, Zhang X Z, Zhao B, Zhao J, Tai R Z 2025 Phys. Scr. 100 045533Google Scholar

    [28]

    Simons H, Poulsen H F, Guigay J P, Detlefs C 2016 arXiv: 1609.07513 [physics.ins-det]

    [29]

    Wakonig K, Diaz A, Bonnin A, Stampanoni M, Bergamaschi A, Ihli J, Guizar-Sicairos M, Menzel A 2019 Sci. Adv. 5 eaav0282Google Scholar

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  • Received Date:  01 July 2025
  • Accepted Date:  31 August 2025
  • Available Online:  04 September 2025
  • Published Online:  20 October 2025
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