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物理学报. 1998, 47(1): 154-159.
doi: 10.7498/aps.47.154.
微波等离子体化学汽相沉积法沉积CNx膜的研究
- 收稿日期: 1997-03-31
- 刊出日期: 1998-01-20
摘要: 对用微波等离子体化学汽相沉积法沉积在Si基片上的CNx膜分别进行Raman散射、X射线光电子能谱、X射线衍射和扫描电子显微镜等技术的分析与测试. Raman散射的研究结果表明在CH4与N2的流量比低于1∶8时，CNx膜的散射谱中以非晶石墨峰的形式出现.当流量比为1∶8时，则表现为较尖锐的C≡N键(2190cm-1)的特征峰；从X射线光电子能谱的分析结果可以看出C，N成键的方式主要是C≡N键和C—N
English Abstract
STUDIES OF CNx FILMS DEPOSITED BY MEANS OF MICROWAVE PLASMA CVD METHOD
- Received Date:
31 March 1997
- Published Online:
20 January 1998
Abstract: CNx films deposited on Si substrates with microwave plasma chemical vapor deposition method are measured and analyzed using Raman scattering,X-ray photoelectron spectrum,X-ray diffraction and scanning electron microscopy techniques.The result of Raman spectrum shows the amorphous graphite peak around 1600cm-1 with the flow ratio of CH4 and N2 below 1∶8.As the flow ratio is equal to 1∶8,a characteristic peak around 2190cm-1 exists,which represents C≡N bond.According to the XPS results,the binding pattern of C and N are seen to be of C—N bond and C≡N bond.There is no diffraction peaks corresponding to β-C3N4 phase in the XRD pattern.The gas pressure has influence on the deposited rate of the film.
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