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The SiC nano-bar relaxation has been investigated using MD method. The Tersoff potential is adopted as the potential function. The characteristic of the homeostasis of SiC nano-bar relaxation is demonstrated. The nano-bar is affected by the strong surface effect and small size effect. The phenomena of torsion and bending is observed during the relaxation.
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Keywords:
- SiC nano-bar /
- MD method /
- surface effect /
- small size effect
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