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组合材料方法研究膜厚对Ni/SiC电极接触性质的影响

黄维 陈之战 陈义 施尔畏 张静玉 刘庆峰 刘茜

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组合材料方法研究膜厚对Ni/SiC电极接触性质的影响

黄维, 陈之战, 陈义, 施尔畏, 张静玉, 刘庆峰, 刘茜

Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method

Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian
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  • 采用组合材料方法研究了金属Ni膜厚对Ni/SiC接触性质的影响.16个膜厚均为18 nm的Ni/SiC电极具有较为一致的肖特基接触性质;膜厚从10 nm增加到160 nm,肖特基接触的电流-电压(I-V)曲线随膜厚发生显著变化.分析表明这种变化源于膜厚对理想因子n和有效势垒高度ФB的影响.1000℃快速退火后,这些肖特基接触都转变为欧姆接触,Ni2Si是主要的生成物.I-V曲线测
    In this paper,combinatorial method was introduced for the first time to disclose the effect of Ni thickness on the Ni/SiC contact properties. Sixteen contacts with the same Ni thickness showed similar Schottky contact properties.The current voltage curves (I-V) were different for the Schottky contacts with different Ni thickness from 10 nm to 160 nm. The effect of the Ni thickness to the ideality factor n and the effective barrier height ФB was found to be the origin of the different Schottky contact properties. After rapid annealed at 1000℃,all the contacts showed good linear I-V curves,which indicated the formation of ohmic contacts. Ni2Si was the main reaction product. Comparing the slopes of the IV curves,the contacts with 30—70 nm Ni showed good ohmic contact properties. The results confirmed our previous conclusion about the key role of appropriate carbon-enriched layer (CEL) for the formation of ohmic contacts on SiC.
    • 基金项目: 国家高技术研究发展计划(批准号:2006AA03A146),中国科学院知识创新项目(批准号:KGCX2-YW-206);上海市科学技术委员会(批准号:09DZ1141400,09520714900)和高性能陶瓷和超微结构国家重点实验室开放基金(批准号:SKL200810SIC)资助的课题.
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    ]Wang S G,Zhang Y M 2003 Chin. Phys. 12 89

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    ]Guo H,Zhang Y M,Qiao D Y,Sun L,Zhang Y M 2007 Chin. Phys. 16 1753

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    ]Basak D,Mahanty S 2003 Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 98 177

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    ]Roccaforte F,La Via F,Raineri V,Calcagno L,Musumeci P 2001 Appl. Surf. Sci. 184 295

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    ]Nikitina I P,Vassilevski K V,Wright N G,Horsfall A B,O'Neill A G,Johnson C M 2005 J. Appl. Phys. 97 083709

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    ]Park J H,Holloway P H 2005 J. Vac. Sci. Technol. B 23 486

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    ]Nikitina I P,Vassilevski K V,Horsfall A B,Wright N G,O′Neill A G,Johnson C M,Yamamoto T,Malhan R K 2006 Semicond. Sci. Technol. 21 898

    [22]

    ]Huang W,Chen Z Z,Chen B Y,Zhang J Y,Yan C F,Xiao B,Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维、陈之战、陈博源、张静玉、严成锋、肖兵、施尔畏 2009 物理学报 58 3443]

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    ]Okuno K,Ito T,Iwami M,Hiraki A 1980 Solid State Commun. 34 493

    [24]

    ]Masri P,Langlade P 1981 J. Phys. C-Solid State Phys.14 5379

    [25]

    ]Biber M,Gullu O,Forment S,Van Meirhaeghe R L,Turut A 2006 Semicond. Sci. Technol. 21 1

    [26]

    ]Gullu O,Biber M,Van Meirhaeghe R L,Turut A 2008 Thin Solid Films 516 7851

    [27]

    ]Liu Z L,Shang Y C,Wang S R 2003 Acta Phys. Sin. 52 211 (in Chinese) [刘忠立、尚也淳、王姝睿 2003 物理学报 52 211]

    [28]

    ]Rhoderick E H,Williams R H 1978 Metal-Semiconductor Contacts (Oxford:Clarendon press) p47

    [29]

    ]Roccaforte F,La Via F,Raineri V,Pierobon R,Zanoni E 2003 J. Appl. Phys. 93 9137[30]Im H J,Ding Y,Pelz J P,Choyke W J 2001 Phys. Rev. B 64 075310

  • [1]

    [1]Xiang X D,Sun X D,Briceno G,Lou Y L,Wang K A,Chang H Y,Wallacefreedman W G,Chen S W,Schultz P G 1995 Science 268 1738

    [2]

    [2]Xiang X D 1999 Annu. Rev. Mater. Sci. 29 149

    [3]

    [3]Danielson E,Golden J H,McFarland E W,Reaves C M,Weinberg W H,Wu X D 1997 Nature 389 944

    [4]

    [4]van Dover R B,Schneemeyer L D,Fleming R M 1998 Nature 392 162

    [5]

    [5]Li J W,Duewer F,Gao C,Chang H Y,Xiang X D,Lu Y L 2000 Appl. Phys. Lett. 76 769

    [6]

    [6]Yoo Y K,Duewer F,Yang H T,Yi D,Li J W,Xiang X D 2000 Nature 406 704

    [7]

    [7]Treu M,Rupp R,Blaschitz P,Hilsenbeck J 2006 Superlattices and Microstructures 40 380

    [8]

    [8]Anderson T,Barrett D,Chen J,Emorhokpor E,Gupta A,Hopkins R,Souzis A,Tanner C,Yoganathan M,Zwieback I,Choyke W J,Devaty R P,Yan F 2005 Silicon Carbide and Related Materials 483 9

    [9]

    [9]Shiomi H,Kinoshita H,Furusho T,Hayashi T,Tajima M,Higashi E 2006 J. Cryst. Growth 292 188

    [10]

    ]Wang S G,Zhang Y M 2003 Chin. Phys. 12 89

    [11]

    ]Lu H L,Zhang Y M,Zhang Y M,Che Y 2008 Chin. Phys. B 17 1410

    [12]

    ]Guo H,Zhang Y M,Qiao D Y,Sun L,Zhang Y M 2007 Chin. Phys. 16 1753

    [13]

    ]Lee J W,Angadi B,Park H C,Park D H,Choi J W,Choi W K,Kim T W 2007 J. Electrochem. Soc. 154 849

    [14]

    ]Basak D,Mahanty S 2003 Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 98 177

    [15]

    ]Park J H,Holloway P H 2005 J. Vac. Sci. Technol. B 23 2530

    [16]

    ]Crofton J,Porter L M,Williams J R 1997 Phys. Status Solidi B-Basic Res. 202 581

    [17]

    ]Roccaforte F,La Via F,Raineri V,Calcagno L,Musumeci P 2001 Appl. Surf. Sci. 184 295

    [18]

    ]Ervin M H,Jones K A,Lee U,Wood M C 2006 J. Vac. Sci. Technol. B 24 1185

    [19]

    ]Nikitina I P,Vassilevski K V,Wright N G,Horsfall A B,O'Neill A G,Johnson C M 2005 J. Appl. Phys. 97 083709

    [20]

    ]Park J H,Holloway P H 2005 J. Vac. Sci. Technol. B 23 486

    [21]

    ]Nikitina I P,Vassilevski K V,Horsfall A B,Wright N G,O′Neill A G,Johnson C M,Yamamoto T,Malhan R K 2006 Semicond. Sci. Technol. 21 898

    [22]

    ]Huang W,Chen Z Z,Chen B Y,Zhang J Y,Yan C F,Xiao B,Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) [黄维、陈之战、陈博源、张静玉、严成锋、肖兵、施尔畏 2009 物理学报 58 3443]

    [23]

    ]Okuno K,Ito T,Iwami M,Hiraki A 1980 Solid State Commun. 34 493

    [24]

    ]Masri P,Langlade P 1981 J. Phys. C-Solid State Phys.14 5379

    [25]

    ]Biber M,Gullu O,Forment S,Van Meirhaeghe R L,Turut A 2006 Semicond. Sci. Technol. 21 1

    [26]

    ]Gullu O,Biber M,Van Meirhaeghe R L,Turut A 2008 Thin Solid Films 516 7851

    [27]

    ]Liu Z L,Shang Y C,Wang S R 2003 Acta Phys. Sin. 52 211 (in Chinese) [刘忠立、尚也淳、王姝睿 2003 物理学报 52 211]

    [28]

    ]Rhoderick E H,Williams R H 1978 Metal-Semiconductor Contacts (Oxford:Clarendon press) p47

    [29]

    ]Roccaforte F,La Via F,Raineri V,Pierobon R,Zanoni E 2003 J. Appl. Phys. 93 9137[30]Im H J,Ding Y,Pelz J P,Choyke W J 2001 Phys. Rev. B 64 075310

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  • 被引次数: 0
出版历程
  • 收稿日期:  2009-06-03
  • 修回日期:  2009-09-23
  • 刊出日期:  2010-05-15

组合材料方法研究膜厚对Ni/SiC电极接触性质的影响

  • 1. (1)中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海 200050; (2)中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海 200050;中国科学院研究生院,北京 100049; (3)中国科学院上海硅酸盐研究所宽禁带半导体材料课题组,上海 200050; (4)中国科学院上海硅酸盐研究所宽禁带半导体材料课题组,上海 200050;中国科学院研究生院,北京 100049
    基金项目: 

    国家高技术研究发展计划(批准号:2006AA03A146),中国科学院知识创新项目(批准号:KGCX2-YW-206)

    上海市科学技术委员会(批准号:09DZ1141400,09520714900)和高性能陶瓷和超微结构国家重点实验室开放基金(批准号:SKL200810SIC)资助的课题.

摘要: 采用组合材料方法研究了金属Ni膜厚对Ni/SiC接触性质的影响.16个膜厚均为18 nm的Ni/SiC电极具有较为一致的肖特基接触性质;膜厚从10 nm增加到160 nm,肖特基接触的电流-电压(I-V)曲线随膜厚发生显著变化.分析表明这种变化源于膜厚对理想因子n和有效势垒高度ФB的影响.1000℃快速退火后,这些肖特基接触都转变为欧姆接触,Ni2Si是主要的生成物.I-V曲线测

English Abstract

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