SiC电力电子器件金属接触研究现状与进展

黄玲琴; 朱靖; 马跃; 梁庭; 雷程; 李永伟; 谷晓钢

doi:10.7498/aps.70.20210675

摘要

碳化硅(SiC)半导体具有宽禁带、高临界击穿电场、高热导率等优异性能, 在高温、高频、大功率、低功耗器件领域具有广阔的应用前景, 因此, 高效节能的SiC电力电子器件研究备受关注. 然而, 阻碍SiC器件发展应用的一个重要瓶颈是高性能的金属接触制备困难. 本文通过对比分析SiC器件欧姆接触和肖特基接触制备的研究现状, 揭示了金属/SiC接触界面特性复杂, 肖特基势垒不可控等关键问题; 对金属/SiC接触势垒及界面态性质的研究现状进行分析, 强调了对界面势垒进行有效调控的重要意义; 重点分析了近年来金属/SiC接触界面调控技术方面的重要进展, 同时, 对金属/SiC接触界面态本质及界面调控技术研究未来发展的方向进行了展望.

关键词:

Abstract

Silicon carbide (SiC) is a promising candidate for applications in high temperature, high voltage, high power, and low-power dissipation devices due to its unique properties like wide band gap, high critical electric field, and high thermal conductivity. However, one of the main bottlenecks hindering the SiC power devices from developing and being put into practical application is the fabrication of good metal/SiC contact. In this review, the research status of Ohmic contact and Schottky contact of SiC device are compared and analyzed. The complicated interface properties and uncontrollable barrier height at metal/SiC interface are revealed. In addition, the research status of metal/SiC contact barrier and interface state properties are analyzed, and the important significance of effective control of interface barrier is highlighted. Furthermore, the research progress of metal/SiC contact interface regulation technology is specially analyzed. The future development directions in the nature of metal/SiC interface states and interface control technology are finally prospected.

Keywords:

作者及机构信息

1.
江苏师范大学电气工程及自动化学院, 徐州　221000

2.
中北大学, 仪器科学与动态测试教育部重点实验室, 太原　030051

通信作者: 梁庭, liangtingnuc@163.com ; 谷晓钢, guxg@jsnu.edu.cn

基金项目: 国家自然科学基金(批准号: 62074071)资助的课题

Authors and contacts

1.
School of Electrical Engineering and Automation, Jiangsu Normal University, Xuzhou 221000, China

2.
Science and Technology on Electronic Test & Measurement Laboratory, North University of China, Taiyuan 030051, China

Corresponding author: Liang Ting, liangtingnuc@163.com ; Gu Xiao-Gang, guxg@jsnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62074071)

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 (a) 经激光辐射的Au/4H-SiC接触I-V特性曲线; (b) 相应的肖特基势垒高度值柱状图^[55]

Fig. 1. (a) I-V curve of Au/4H-SiC contacts with laser irradiation; (b) histograms of corresponding Schottky barrier height values^[55].

下载: 全尺寸图片幻灯片

图 2 Ni/TiO₂/p-type 4H-SiC接触 (a) 结构及 (b) 能带图^[61]

Fig. 2. Schematic illustration of the contact (a) structure and (b) energy band diagram of Ni/TiO₂/p-type 4H-SiC^[61].

下载: 全尺寸图片幻灯片

图 3 经不同表面处理后的XPS　(a) Si 2p; (b) C 1s谱^[67]

Fig. 3. XPS spectra of p-type 4H-SiC surfaces with different pretreatments: (a) Si 2p spectra; (b) C 1s spectra^[67].

下载: 全尺寸图片幻灯片

[1]	Kimoto T, Cooper J A 2014 Fundamentals of Silicon Carbide Technology (Singapore: John Wiley & Sons Singapore Pte. Ltd) pp1−538
[2]	盛况, 郭清, 张军明, 钱照明 2012 中国电机工程学报 32 1 Sheng K, Guo Q, Zhang J M, Qian Z M 2012 Proc. Chin. Soc. Elect. Eng. 32 1
[3]	She X, Huang A Q, Lucía Ó, Ozpineci B 2017 IEEE Trans. Ind. Electron. 64 8193 Google Scholar
[4]	Zekentes K 2018 Advancing Silicon Carbide Electronics Technology I: Metal Contacts to Silicon Carbide: Physics, Technology, Applications (Millersville: Materials Research Forum LLC) pp1−238
[5]	Gao M M, Hu T T, Chen Z Z 2019 IEEE Trans. Electron Devices 66 3929 Google Scholar
[6]	He Y J, Lv H L, Tang X Y, Song Q W, Zhang Y M, Han C, Guo T, He X N, Zhang Y M, Zhang Y M 2019 J. Alloys Compd. 805 999 Google Scholar
[7]	Badila M, Brezeanu G, Millan J, Godignon P, Banu V 2002 Diamond Relat. Mater. 11 1258 Google Scholar
[8]	Cheng J C, Tsui B Y 2017 IEEE Electron Device Lett. 38 1700 Google Scholar
[9]	Omar S U, Sudarshan T S, Rana T A, Song H, Chandrashekhar M 2015 IEEE Trans. Electron Devices 62 615 Google Scholar
[10]	Vivona M, Greco G, Bongiorno C, Nigro R L, Scalese S, Roccaforte F 2017 Appl. Surf. Sci. 420 331 Google Scholar
[11]	Huang L Q, Liu B B, Zhu Q Z, Chen S H, Gao M C, Qin F W, Wang D J 2012 Appl. Phys. Lett. 100 263503 Google Scholar
[12]	Huang L Q, Qin F W, Li S J, Wang D J 2013 Appl. Phys. Lett. 103 033520 Google Scholar
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[16]	Addamiano A 1970 US Patent 3 510 733
[17]	Hamad V A, Tannous T A, Soueidan M, Gremillard L, Zaatar Y 2020 Microelectron. Reliab. 110 113694 Google Scholar
[18]	Zhang Y M, Guo T, Tang X Y, Yang J, He Y J, Zhang Y M 2018 J. Alloys Compd. 731 1267 Google Scholar
[19]	Kragh-Buetow K C, Okojie R S, Lukco D, Mohney S E 2015 Semicond. Sci. Technol. 30 105019 Google Scholar
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[27]	Li F, Sharma Y, Walker D, Hindmarsh S, Mawby P 2016 IEEE Electron Device Lett. 37 1189 Google Scholar
[28]	Wu S Y, Campbell R B 1974 Solid-State Electronics 17 683
[29]	Wahab Q, Ellison A, Henry A, Janzén E, Hallin C, Di Persio J, Martinez R 2000 Appl. Phys. Lett. 76 2725 Google Scholar
[30]	Li J L, Li Y, Wang L, Xu Y, Yang F, Han P, Ji X L 2019 Chin. Phys. B 28 027303 Google Scholar
[31]	Pristavu G, Brezeanu G, Badila M, Pascu R, Danila M, Godignon P 2015 Appl. Phys. Lett. 106 223704
[32]	Cowley A M, Sze S M 1965 Jpn. J. Appl. Phys. 36 3212 Google Scholar
[33]	Tsui B Y, Cheng J C, Yen C T, Lee C Y 2017 Solid-State Electron. 133 83 Google Scholar
[34]	Yang Z Y, Wang Y, Li X J, Yang J Q, Shi D K, Cao F 2021 Microelectron. Eng. 239 111531
[35]	Song Q W, Zhang Y M, Zhang Y M, Cheng F P, Tang X Y 2011 Chin. Phys. B 20 057301 Google Scholar
[36]	Lee K Y, Huang Y H 2012 IEEE Trans. Electron Devices 59 694 Google Scholar
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[44]	Tung R T 2000 Phys. Rev. Lett. 84 6078 Google Scholar
[45]	Aboelfotoh M O, Fröjdh C, Petersson C S 2003 Phys. Rev. B 67 075312 Google Scholar
[46]	Gao M, Tsukimoto S, Goss S H, Tumakha S P, Onishi T, Murakami M, Brillson L J 2007 J. Electron. Mater. 36 277 Google Scholar
[47]	Nakayama T 2019 International Workshop on Junction Technology (IWJT) Kyoto, Japan, June 6–7, 2019 pp1–5
[48]	Tsui B Y, Cheng J C, Lee L S, Lee C Y, Tsai M J 2014 Jpn. J. Appl. Phys. 53 04EP10 Google Scholar
[49]	Brillson L J 2007 J. Vac. Sci. Technol., A 25 943 Google Scholar
[50]	Roccaforte F, Bongiorno C, Via F L, Raineri V 2004 Appl. Phy. Lett. 85 6152 Google Scholar
[51]	Çınar K, Coşkun C, Gür E, Aydoğan Ş 2009 Nucl. Instrum. Methods Phys. Res., Sect. B 267 87 Google Scholar
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[53]	Wang D, Hu R, Chen G, Tang C, Ma Y, Gong M, Yu G, Gao S, Li Y, Huang M, Yang Z 2021 Nucl. Instrum. Meth. B 491 52 Google Scholar
[54]	Adelmann B, Hürner A, Schlegel T, Bauer A J, Frey L, Hellmann R 2013 J. Laser Micro/Nanoeng. 8 97 Google Scholar
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[56]	Zhou Z W, Zhang Z Z, He W W, Hao J Y, Sun J, Zhang F, Zheng Z D 2020 Mater. Sci. Forum 1004 712 Google Scholar
[57]	Gorji M S, Cheong K Y 2015 Crit. Rev. Solid State Mater. Sci. 40 197 Google Scholar
[58]	Kang M S, Ahn J J, Moon K S, Koo S M 2012 Nanoscale Res. Lett. 7 75 Google Scholar
[59]	Zheng H, Mahajan B K, Su S C, Mukherjee S, Gangopadhyay K, Gangopadhyay S 2016 Sci. Rep. 6 25234 Google Scholar
[60]	Gorji M S, Cheong K Y 2015 Appl. Phy. A 118 315 Google Scholar
[61]	Choi G, Yoon H H, Jung S, Jeon Y, Lee J Y, Bahng W, Park K 2015 Appl. Phys. Lett. 107 1480
[62]	Huang L Q, Xia M L, Ma Y, Gu X G 2020 J. Appl. Phys. 127 225301 Google Scholar
[63]	Shi D K, Wang Y, Wu X, Yang Z Y, Li X J, Yang J Q, Cao F 2021 Solid-State Electron. 180 107992 Google Scholar
[64]	Triendl F, Pfusterschmied G, Berger C, Schwarz S, Artner W, Schmid U 2021 Thin Solid Films 721 138539 Google Scholar
[65]	Seyller T 2004 J. Phys. Condens. Matter 16 S1755 Google Scholar
[66]	Losurdo M, Bruno G, Brown A, Kim T H 2004 Appl. Phy. Lett. 84 4011 Google Scholar
[67]	Huang L Q, Gu X G 2019 Semicond. Sci. Technol. 34 015011 Google Scholar
[68]	Huang L Q, Gu X G 2019 J. Appl. Phys. 125 025301 Google Scholar
[69]	Cichoň S, Machác P, Barda B, Sofer Z 2011 Microelectron. Eng. 88 553 Google Scholar
[70]	Kwietniewski N, Sochacki M, Szmidt J, Guziewicz M, Kaminska E, Piotrowska A 2008 Appl. Surf. Sci. 254 8106 Google Scholar

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SiC电力电子器件金属接触研究现状与进展