聚合物物理属性对离子注入效应的影响

黄永宪; 吕世雄; 田修波; 杨士勤; Fu Ricky; Chu K Paul; 冷劲松; 李垚

doi:10.7498/aps.61.105203

摘要

聚合物导电性能差, 表面电荷积聚所产生的电容效应致使其表面电位衰减, 采用等离子体浸没离子注入对其表面改性是非常困难的. 建立了绝缘材料等离子体浸没离子注入过程的粒子模拟(PIC)模型, 实时跟踪离子在等离子体鞘层中的运动形态及特性并进行统计分析. 并基于PIC模型, 将聚合物表面的二次电子发射系数直接与离子注入即时能量建立关联, 研究了聚合物厚度、介电常数和二次电子发射系数等物理量对鞘层演化、离子注入能量和剂量的影响规律. 研究结果表明: 当聚合物厚度小于200 m, 相对介电常数大于7, 二次电子发射系数小于0.5时, 离子注入剂量和高能离子所占的份额与导体离子注入情况相当. 通过对聚合物表面离子注入剂量和高能离子所占份额的研究, 为绝缘材料和半导体材料表面等离子体浸没离子注入的实现提供了理论和实验依据.

关键词:

Abstract

Plasma immersion ion implantation (PIII) of polymer materials is inherently difficult because the voltage across the sheath is reduced by the voltage drop across the insulator due to dielectric capacitance and charge accumulating on the insulator surface. The spatiotemporal evolutions of plasma sheath, energy and dose of ions are simulated by particle-in-cell (PIC) model for ion implantation into insulator materials. Statistical results can be achieved through scouting each ion motion in the plasma sheath. Based on the PIC model, the secondary electron emission (SEE) coefficient is determined according to the instant energy of implanting ions. Effects of thickness, dielectric constant and SEE coefficient on sheath evolution, dose and energy of incident ions are studied. The ion implantation doses and the share of high-energy incident ions are basically equivalent to the case of implantation of conductor ions, when the polymer thickness is less than 200 m, relative dielectric constant is more than 7, and SEE coefficient is less than 0.5. The numerical simulation of ion implantation into polymer can effectively provide a scientific and experimental basis for PIII of insulators and semiconductors.

Keywords:

作者及机构信息

1.
哈尔滨工业大学先进焊接与连接国家重点实验室, 哈尔滨 150001;

2.
香港城市大学物理及材料科学系, 香港;

3.
哈尔滨工业大学复合材料与结构研究所, 哈尔滨 150001

基金项目: 国家自然科学基金(批准号: 50904020, 50974046)、哈尔滨市青年科技创新人才基金(批准号: 2009RFQXG050)、中央高校基础科研业务费专项资金(批准号: HIT. NSRIF. 2012007)和国家博士后科学基金(批准号: 20090460883, 201003419)资助的课题.

Authors and contacts

1.
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;

2.
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China;

3.
Center for Composite Materials and Structures, Harbin Institute of Technology, Harbin 150001, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50904020, 50974046), the Science and Technology Innovation Research Project of Harbin for Young Scholar (Grant No. 2009RFQXG050), the Fundamental Research Funds for the Central Universities, China (Grant No. HIT. NSRIF. 2012007), and the China Postdoctoral Science Foundation (Grant Nos. 20090460883, 201003419).

参考文献

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[16]	Kwok D T K, Tong L P, Yeung C Y, Remedios C G D, Chu P K 2010 Surf. Coat. Techn. 204 2892
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[19]	Fu R, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[20]	Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Technol. 135 268
[21]	Tian X B, Fu R, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[22]	Kwok D T K, Wang H Y, Zhang Y M, Yeung K W K, Chu P K 2009 J. Appl. Phys. 105 053302
[23]	Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Technol. 19 045002
[24]	Powles R C, McKenzie D R, Meure S J, Swain M V, James N L 2007 Surf. Coat. Technol. 201 7961
[25]	Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507-1
[26]	Emmert G A 1994 J. Vacuum Sci. Technol. B 12 880
[27]	Shi Y C 1999 J. East China Normal University (Natural Sci.) 3 59 (in Chinese) [施芸城 1999 华东师范大学学报(自然科学版) 3 59]
[28]	Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[29]	Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[30]	Barnat E V, Lu T M 2001 J. Appl. Phys. 90 5898
[31]	Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[32]	Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[33]	Tian X B, Yang S Q, Huang Y X, Chu P K, Fu R 2004 J. Phys. D: Appl. Phys. 37 50
[34]	Kim D, Economou D J 2004 J. Appl. Phys. 95 3311
[35]	Huang Y X, Tian X B, Yang S Q, Fu R, Chu K P 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R, Chu K P 2007 物理学报 56 4762]
[36]	Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]

施引文献

[1]	Conrad J R 1987 J. Appl. Phys. 62 777
[2]	Conrad J R, Radtke J L, Dodd R A, Worzala F J, Tran N C 1987 J. Appl. Phys. 62 4591
[3]	Chu K P 2004 J. Vac. Sci. Technol. B 22 289
[4]	Li X C, Wang Y N 2004 Acta Phys. Sin. 53 2666 (in Chinese) [李雪春, 王友年 2004 物理学报 53 2666]
[5]	Wang J L, Zhang G L, Liu Y F, Wang Y N, Liu C Z, Yang S Z 2004 Chin. Phys. 13 65
[6]	Lu Q Y, Li L H, Li J H, Fu R, Chu P K 2009 Appl. Phys. Lett. 95 061503
[7]	Lu Q Y, Wang Z, Li L H, Fu R, Chu P K 2010 J. Appl. Phys. 108 033304
[8]	Zheng Z S, Liu Z L, Zhang G Q, Li N, Fan K, Zhang E X, Yi W B, Chen M, Wang X 2005 Acta Phys. Sin. 54 348 (in Chinese) [郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦 2005 物理学报 54 348]
[9]	Polji R H, Yadav A D, Dubey S K, Kumar P, Kanjilal D 2009 Surf. Coat. Techn. 203 2654
[10]	Zhang H H, Zhang C H, Li B S, Zhou L H, Yang Y T, Fu Y C 2009 Acta Phys. Sin. 58 3302 (in Chinese) [张洪华, 张崇宏, 李炳生, 周丽宏, 杨义涛, 付云翀 2009 物理学报 58 3302]
[11]	Zhang D C, Shen Y Y, Huang Y J, Wang Z, Liu C L 2010 Acta Phys. Sin. 59 7974 (in Chinese) [张大成, 申艳艳, 黄元杰, 王卓, 刘昌龙 2010 物理学报 59 7974]
[12]	Liu X F, Jiang C Z, Ren F, Fu Q 2005 Acta Phys. Sin. 54 4633 (in Chinese) [刘向绯, 蒋昌忠, 任峰, 付强 2005 物理学报 54 4633]
[13]	Fu W J, Liu Z W, Liu M, Mu Z X, Zhang Q Y, Guan Q F, Chen K M 2009 Acta Phys. Sin. 58 5693 (in Chinese) [付伟佳, 刘志文, 刘明, 牟宗信, 张庆瑜, 关庆丰, 陈康敏 2009 物理学报 58 5693]
[14]	Gao H, Liao L Z, Zhang Z H 2009 Acta Phys. Sin. 58 427 (in Chinese) [高皓, 廖龙忠, 张朝晖 2009 物理学报 58 427]
[15]	Man B Y, Zhang Y H, Lü G H, Liu A H, Zhang Q G 2005 Acta Phys. Sin. 54 837 (in Chinese) [满宝元, 张运海, 吕国华, 刘爱华, 张庆刚 2005 物理学报 54 837]
[16]	Kwok D T K, Tong L P, Yeung C Y, Remedios C G D, Chu P K 2010 Surf. Coat. Techn. 204 2892
[17]	Tóth A, Kereszturi K, Mohai M, Bertóti I 2010 Surf. Coat. Techn. 204 2898
[18]	Oates T W H, Bilek M M M 2002 J. Appl. Phys. 92 2980
[19]	Fu R, Chu P K, Tian X B 2004 J. Appl. Phys. 95 3319
[20]	Lacoste A, Coeur F L, Arnal Y, Pelletier J, Grattepain C 2001 Surf. Coat. Technol. 135 268
[21]	Tian X B, Fu R, Chen J Y, Chu P K, Brown I G 2002 Nucl. Instr. Meth. Phys. Res. B 187 485
[22]	Kwok D T K, Wang H Y, Zhang Y M, Yeung K W K, Chu P K 2009 J. Appl. Phys. 105 053302
[23]	Allan S Y, Mckenzie D R, Bilek M M M 2010 Plasma Sources Sci. Technol. 19 045002
[24]	Powles R C, McKenzie D R, Meure S J, Swain M V, James N L 2007 Surf. Coat. Technol. 201 7961
[25]	Powles R C, Kwok D T K, McKenzie D R, Bilek M M M 2005 Phys. Plasmas 12 093507-1
[26]	Emmert G A 1994 J. Vacuum Sci. Technol. B 12 880
[27]	Shi Y C 1999 J. East China Normal University (Natural Sci.) 3 59 (in Chinese) [施芸城 1999 华东师范大学学报(自然科学版) 3 59]
[28]	Dai Z L, Wang Y N 2002 J. Appl. Phys. 92 6428
[29]	Li X C, Wang Y N 2006 Thin Solid Films 506-507 307
[30]	Barnat E V, Lu T M 2001 J. Appl. Phys. 90 5898
[31]	Oates T W H, Pigott J, McKenzie D R, Bilek M M M 2003 IEEE Trans. Plasma Sci. 31 438
[32]	Ueda M, Tan I H, Dallaqua R S, Rossi J O, Barroso J J, Tabacniks M H 2003 Nucl. Instr. Meth. Phys. Res. B 206 760
[33]	Tian X B, Yang S Q, Huang Y X, Chu P K, Fu R 2004 J. Phys. D: Appl. Phys. 37 50
[34]	Kim D, Economou D J 2004 J. Appl. Phys. 95 3311
[35]	Huang Y X, Tian X B, Yang S Q, Fu R, Chu K P 2007 Acta Phys. Sin. 56 4762 (in Chinese) [黄永宪, 田修波, 杨士勤, Fu R, Chu K P 2007 物理学报 56 4762]
[36]	Liu C S, Wang D Z, Liu T W, Wang Y W 2008 Acta Phys. Sin. 57 6450 (in Chinese) [刘成森, 王德真, 刘天伟, 王艳辉 2008 物理学报 57 6450]

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