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界面合金化控制柔性Al/PI薄膜应力的研究

蒋钊 陈学康

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界面合金化控制柔性Al/PI薄膜应力的研究

蒋钊, 陈学康

Study on controlling the stress in flexible Al/PI film by interface alloying

Jiang Zhao, Chen Xue-Kang
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  • 针对航天器用MEMS热控百叶窗存在的柔性薄膜应力问题, 开展界面合金化控制薄膜应力技术研究. 通过给柔性Al/PI薄膜体系添加中间层Sn, 使其合金化, 使晶格产生膨胀畸变, 来引入相反的应力与已经存在的本征压应力相抗衡, 可获得低表观应力的薄膜. 用SEM和EDS剖面分析验证了Sn原子发生了明显的扩散现象, 形成了Al-Sn合金层. 这种方法可作为控制薄膜应力的一种新的技术手段.
    Micro-eletromechanical system (MEMS) thermal-control shutters for spacecraft are fabricated by using the flexible Al/PI film, because of its light mass, no brittleness and withstanding severe mechanical environment (mechanical environment adaptability) in space. But the stress in the film would be able to bend the shutters too much to fabricate shutter array. Therefore, how to control the thin film stress is an important problem and it is necessary for flat shutters to take some measure to remove or reduce the thin film stress. This internal stress in the thin film formed intricately during the deposition process would make the film exhibit macroscopic compressive stress. So it is difficult to control the thin film stress micro-mechanically, but macro-mechanically. According to the results of the current study, the controlling technology of thin stress is commonly applicable to rigid substrates. In this paper, the flexible Al/PI film may be controlled by interface alloying. We put forward a way of adding Sn layer to the flexible Al/PI film, which makes Al/Sn interface to be alloyed as a measure to control the stress. In the alloy phase, lattice expansion and distortion results in the emergence of transverse shearing stress. The intrinsic compressive stress can be canceled out by the transverse shearing stress and the apparent stress in the films decreases consequently. The Sn atoms diffusion behaviour is proved to form Al-Sn alloying layer by SEM and EDS. This method can be used as a new technology of controlling thin film stress.
      通信作者: 蒋钊, qqq-128@163.com
    • 基金项目: 真空技术与物理重点实验室基金(批准号: BM0501)资助的课题.
      Corresponding author: Jiang Zhao, qqq-128@163.com
    • Funds: Project supported by the Science and Technology on Vacuum Technology and Physics Laboratory, China (Grant No. BM0501).
    [1]

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    [2]

    Shao S Y 2004 Ph. M. Dissertation (Shanghai: Shanghai Institute of Optics and Fine Mechanics) (in Chinese) [邵淑英 2004 硕士学位论文 (上海: 上海光学精密机械研究所)]

    [3]

    Fan Y D, Zhou Z F 1996 Mater. Sci. Eng. 14 5 (in Chinese) [范玉殿, 周志烽 1996 材料科学与工程 14 5]

    [4]

    Wang Q X 2005 Acta Phys. Sin. 54 3757 (in Chinese) [王庆学 2005 物理学报 54 3757]

    [5]

    Zhang J M, Zhang Y, Xu K W 2005 Chin. Phys. B 5 1006

    [6]

    Shao S Y, Fan Z X 2003 Thin Solid Films 445 59

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    Leplan H, Geenen B X, Robic J Y, Pauleau Y1995 Appl. Phys. 78 962

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    Paniago R, Soares E A, Pfannes H D, Siervo A D, Landers R 2004 Surface Science 560 2734

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    Askeland D R (translated by Liu H K) 1988 Materials Science and Engineering (Vol.1) (Beijing: China Astronautic Publishing House) pp200-214 (in Chinese) [唐纳德D R 阿斯克兰 著 (刘海宽译) 1988 料科学与工程(上册)(北京: 宇航出版社) 第200–214页]

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    Fang H Y, Feng J 2005 The Interface Behavior in The Process of Material Connection (Harbin: Harbin Institute Technology Press) pp125-140 (in Chinese) [方洪渊, 冯吉才 2005 材料连接过程中的界面行为(哈尔滨: 哈尔滨工业大学出版社) 第125–140页]

    [11]

    Liao X Z, Zou J, Cockayne D J H 1999 Phys. Rev. B 60 5605

    [12]

    Hadjisavvas G, Kelires P C 2005 Phys. Rev. B 72 075334

    [13]

    Eisenmenger S C, Bangerta H, Tomastikb C 2003 Thin Solid Films 433 97

    [14]

    Luo Y Q 1989 Electromechanical Components 9 22 (in Chinese) [罗玉清 1989 机电元件 9 22]

    [15]

    Perry A J, Albertsue J, Martin P J 1996 Thin Solid Films 81 17

    [16]

    Gu P F, Zheng Z R, Zhao Y J, Liu X 2006 Acta Phys. Sin. 55 6459 (in Chinese) [顾培夫, 郑臻荣, 赵永江, 刘旭 2006 物理学报 55 6459]

    [17]

    Xu R, Jing T F 2003 Thermodynamics and Kinetics of Materials (Harbin: Harbin Institute Technology Press) pp10-13, 216-233 (in Chinese) [徐瑞, 荆天辅 2003 材料热力学与动力学(哈尔滨: 哈尔滨工业大学出版社) 第10–13, 216–233页]

  • [1]

    Yu Y T, Yuan W Z, Qiao D Y 2005 Microfabrication Technology 46 46 (in Chinese) [虞益挺, 范伟政, 乔大勇 2005 微细加工技术 46 46]

    [2]

    Shao S Y 2004 Ph. M. Dissertation (Shanghai: Shanghai Institute of Optics and Fine Mechanics) (in Chinese) [邵淑英 2004 硕士学位论文 (上海: 上海光学精密机械研究所)]

    [3]

    Fan Y D, Zhou Z F 1996 Mater. Sci. Eng. 14 5 (in Chinese) [范玉殿, 周志烽 1996 材料科学与工程 14 5]

    [4]

    Wang Q X 2005 Acta Phys. Sin. 54 3757 (in Chinese) [王庆学 2005 物理学报 54 3757]

    [5]

    Zhang J M, Zhang Y, Xu K W 2005 Chin. Phys. B 5 1006

    [6]

    Shao S Y, Fan Z X 2003 Thin Solid Films 445 59

    [7]

    Leplan H, Geenen B X, Robic J Y, Pauleau Y1995 Appl. Phys. 78 962

    [8]

    Paniago R, Soares E A, Pfannes H D, Siervo A D, Landers R 2004 Surface Science 560 2734

    [9]

    Askeland D R (translated by Liu H K) 1988 Materials Science and Engineering (Vol.1) (Beijing: China Astronautic Publishing House) pp200-214 (in Chinese) [唐纳德D R 阿斯克兰 著 (刘海宽译) 1988 料科学与工程(上册)(北京: 宇航出版社) 第200–214页]

    [10]

    Fang H Y, Feng J 2005 The Interface Behavior in The Process of Material Connection (Harbin: Harbin Institute Technology Press) pp125-140 (in Chinese) [方洪渊, 冯吉才 2005 材料连接过程中的界面行为(哈尔滨: 哈尔滨工业大学出版社) 第125–140页]

    [11]

    Liao X Z, Zou J, Cockayne D J H 1999 Phys. Rev. B 60 5605

    [12]

    Hadjisavvas G, Kelires P C 2005 Phys. Rev. B 72 075334

    [13]

    Eisenmenger S C, Bangerta H, Tomastikb C 2003 Thin Solid Films 433 97

    [14]

    Luo Y Q 1989 Electromechanical Components 9 22 (in Chinese) [罗玉清 1989 机电元件 9 22]

    [15]

    Perry A J, Albertsue J, Martin P J 1996 Thin Solid Films 81 17

    [16]

    Gu P F, Zheng Z R, Zhao Y J, Liu X 2006 Acta Phys. Sin. 55 6459 (in Chinese) [顾培夫, 郑臻荣, 赵永江, 刘旭 2006 物理学报 55 6459]

    [17]

    Xu R, Jing T F 2003 Thermodynamics and Kinetics of Materials (Harbin: Harbin Institute Technology Press) pp10-13, 216-233 (in Chinese) [徐瑞, 荆天辅 2003 材料热力学与动力学(哈尔滨: 哈尔滨工业大学出版社) 第10–13, 216–233页]

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出版历程
  • 收稿日期:  2015-01-21
  • 修回日期:  2015-07-03
  • 刊出日期:  2015-11-05

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