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不同Sb含量p-SnO2薄膜的制备和特性

冯秋菊 刘洋 潘德柱 杨毓琪 刘佳媛 梅艺赢 梁红伟

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不同Sb含量p-SnO2薄膜的制备和特性

冯秋菊, 刘洋, 潘德柱, 杨毓琪, 刘佳媛, 梅艺赢, 梁红伟

Fabrications of different Sb content p-SnO2 thin films

Feng Qiu-Ju, Liu Yang, Pan De-Zhu, Yang Yu-Qi, Liu Jia-Yuan, Mei Yi-Ying, Liang Hong-Wei
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  • 采用化学气相沉积方法, 利用Sb2O3/SnO作为源材料, 在蓝宝石衬底上制备出不同Sb掺杂量的SnO2薄膜, 并在此基础上制作出p-SnO2:Sb/n-SnO2同质p-n 结器件. 研究表明, 随着Sb含量的增加, 样品表面变得平滑, 晶粒尺寸逐渐增大, 且晶体质量有所改善, 发现少量Sb的掺入可以起到表面活化剂的作用. Hall测量结果证实适量Sb的掺杂可以使SnO2呈现p型导电特性, 当Sb2O3/SnO的质量比为1:5时, 其电学参数为最佳值. 此外, p-SnO2:Sb/n-SnO2同质p-n结器件展现出良好的整流特性, 其正向开启电压为3.4 V.
    Tin oxide (SnO2) is a wide-band-gap semiconductor with a bandwidth of 3.6 eV at room temperature, which is widely used in many fields, such as gas sensors, transparent electrodes and optoelectronic devices due to its high optical transparency, low resistivity, and higher chemical and physical stability. However for the real applications of SnO2 based optoelectronic devices, it is necessary to obtain both n-type and p-type SnO2 materials. Unfortunately, SnO2 is intrinsically an n-type semiconductor material, therefore most efforts have been made to obtain p-type SnO2 materials. In this paper, SnO2 thin films with different Sb12 concentrations are grown on Al2O3 substrates by chemical vapor deposition method through using Sb2O3 and SnO as reaction source. The surface morphology, elemental concentration, and structural properties of SnO2 thin films with different Sb concentrations are investigated by field-emission scanning electron microscopy, energy-dispersive spectroscopy and X-ray diffraction, respectively. As the Sb content increases, the SnO2 thin films become more smooth and the grain size increases, indicating that the crystal quality of the thin film is improved. It is also found small amount of Sb doping of SnO2 thin film can be act as a surfactant. Moreover, the Hall measurement results indicate that the Sb doped SnO2 thin film has a p-type conductivity for an optimum Sb2O3/SnO mass ratio of 1:5. The optical absorption spectrum measurement indicates that the energy gap of sample is evidently blue-shifted with increasing Sb doping concentration. Furthermore, the Sb doped p-SnO2/n-SnO2 thin film homojunction is successfully fabricated to verify the p-type conductivity of Sb doped SnO2. The Sb doped p-SnO2/n-SnO2 homojunction device shows good rectifier characteristics, and its forward-turn-on voltage is 3.4 V.
      通信作者: 冯秋菊, fengqiuju@163.com
    • 基金项目: 国家自然科学基金(批准号: 11004020)、辽宁省自然科学基金(批准号: 2014020004)和中国科学院空间激光通信及检验技术重点实验室开放基金(批准号: KJJG10-1)资助的课题.
      Corresponding author: Feng Qiu-Ju, fengqiuju@163.com
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11004020), the Natural Science Foundation of Liaoning Province, China (Grant No. 2014020004), and the Key Laboratory of Space Laser Communication and Testing Technology, Chinese Academy of Sciences (Grant No. KJJG10-1).
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  • [1]

    Li J Z, Tao Y B, Chen Z Z, Jiang X Z, Fu X X, Jiang S, Jiao Q Q, Yu T P, Zhang G Y 2014 Chin. Phys. B 23 016101

    [2]

    Yu F, Wang P J, Zhang C W 2010 Acta Phys. Sin. 59 7285 (in Chinese) [于峰, 王培吉, 张昌文 2010 物理学报 59 7285]

    [3]

    Wang Y H, Ma J, Ji F, Yu X H, Zhang X J, Ma H L 2005 Acta Phys. Sin. 54 1731 (in Chinese) [王玉恒, 马瑾, 计峰, 余旭浒, 张锡健, 马洪磊 2005 物理学报 54 1731]

    [4]

    Ji Z G, He Z J, Song Y L 2004 Acta Phys. Sin. 53 4330 (in Chinese) [季振国, 何振杰, 宋永梁 2004 物理学报 53 4330]

    [5]

    Geraldo V, Scalvia L V A, Lisboa-Filho P N, Morilla-Santos C 2006 J. Phys. Chem. Solids 67 1410

    [6]

    Ji Z G, Zhao L N, He Z P, Zhou Q, Chen C 2006 Mater. Lett. 60 1387

    [7]

    Ji Z G, He Z J, Song Y L, Liu K, Ye Z Z 2003 J. Cryst. Growth 259 282

    [8]

    Yang T Y, Qin X B, Wang H H, Jia Q J, Yu R S, Wang B Y, Wang J, Ibrahim K, Jiang X M, He Q 2010 Thin Solid Films 518 5542

    [9]

    Yang T Y, Qin X B, Wang H H, Jia Q J, Yu R S, Wang B Y, Wang J, Ibrahim K, Jiang X M 2010 Powder Diffr. Suppl. 25 S36

    [10]

    Ravichandran K, Thirumurugan K, Begum N J, Snega S 2013 Superlatt. Microstruct. 60 327

    [11]

    Ni J M, Zhao X J, Zhao J 2012 Surfa. Coat. Tech. 206 4356

    [12]

    Ni J, Zhao X, Zheng X, Zhao J, Liu B 2009 Acta Mater. 57 278

    [13]

    Zhao J Z, Liang H W, Sun J C, Feng Q J, Li S S, Bian J M, Hu L Z, Du G T, Ren J J, Liu J L 2011 Phys. Stat. Sol. A 208 825

    [14]

    Zhang L, Tang H F, Schieke J, Mavrikakis M, Kuech T F 2002 J. Appl. Phys. 92 052304

    [15]

    Zhong W W, Liu F M, Cai L G, Zhou C C, Ding P, Zhang H 2010 J. Alloys. Compd. 499 265

    [16]

    Kim H, Horwitz J S, Piqué A, Gilmore C M, Chrisey D B 1999 Appl. Phys. A 69 447

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出版历程
  • 收稿日期:  2015-07-27
  • 修回日期:  2015-09-10
  • 刊出日期:  2015-12-05

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