-
电非对称效应作为一种新兴技术，被广泛用于对离子能量和离子通量的独立调控.此外，在改善等离子体的径向均匀性方面，电非对称效应也发挥了重要作用.本文采用二维流体力学模型，并耦合麦克斯韦方程组，系统地研究了容性耦合氢等离子体中当放电由多谐波叠加驱动时，不同谐波阶数k下的电非对称效应，重点观察了相位角θn对自偏压以及等离子体径向均匀性的影响.模拟结果表明：在同一谐波阶数下，自偏压随相位角θn的变化趋势不尽相同，且当k增大（k>3）时，自偏压随最高频相位角θk的变化范围逐渐减小.此外，通过调节相位角θn，可以改变轴向功率密度和径向功率密度的相对关系，进而实现对等离子体径向均匀性的调节.研究结果对于利用电非对称效应优化等离子体工艺过程具有一定的指导意义.In addition to the separate control of the ion energy and ion flux, the so-called electrical asymmetry effect (EAE) also plays an important role in improving the plasma radial uniformity. In this work, a two-dimensional fluid model combined with a full set of Maxwell equations is used to investigate the plasma characteristics in an electrically asymmetric capacitive discharge sustained by multiple consecutive harmonics. The effects of the phase angle θn on the dc self-bias (Vdc) and on the plasma radial uniformity for different numbers of consecutive harmonics k are discussed. The simulation results indicate that the phase angles of different harmonics θn have different influences on the dc self-bias Vdc. For instance, Vdc varies almost linearly with θ1 with a period π in dual frequency discharge, and the period is 2π for other discharge conditions. Besides, the modulation of Vdc becomes less obvious by changing the phase angle of the highest harmonic θk, especially for k>3. In addition, both the axial component of the power density Pz and the radial component of the power density Pr vary with θn, thus the plasma radial uniformity can be adjusted. When the total power density at the radial edge becomes comparable to that in the discharge center, the plasma distribution becomes uniform. For instance, when k=2, the plasma radial uniformity is the best at the phase angle θ1=π/2 and θ2=π. However, for k=3, the best radial uniformity is observed at θ1=3π/2, and the nonuniformity degree α is only 0.41% under this condition. It is worth noting that at k=8, the maximum of α is seven times higher than the minimum by changing the phase angles θ1 and θ2, which means that the plasma radial uniformity can be adjusted effectively. However, the modulation induced by θk(k>3) becomes less obvious, especially for k=8. Indeed, the electron density shows an edge-high profile, and the radial uniformity is always bad for all θ8 investigated. The results obtained in this work can help us to gain an insight into the optimization the plasma process by utilizing the EAE.
-
Keywords:
- capacitively coupled plasmas /
- fluid simulation /
- electrical asymmetry effect /
- the plasma radial uniformity
[1] Lieberman M A, Lichtenberg A J 2005 Principles of Plasma Discharges and Materials Processing (New York: Wiley) pp1-5
[2] Lee J K, Manuilenko O V, Babaeva N Y, Kim H C, Shon J W 2005 Plasma Sources Sci. Technol. 14 89
[3] Schulze J, Donko Z, Luggenholscher D, Czarnetzki U 2009 Plasma Sources Sci. Technol. 18 034011
[4] Kawamura E, Lieberman M A, Lichtenberg A J 2006 Phys. Plasmas 13 053506
[5] Turner M M, Chabert P 2006 Phys. Rev. Lett. 96 205001
[6] Booth J P, Curley G, Maric D, Chabert P 2010 Plasma Sources Sci. Technol. 19 015005
[7] SchulzeJ, Donko Z, Schungel E, Czarnetzki U 2011 Plasma Sources Sci. Technol. 20 045007
[8] Donko Z, Schulze J, Hartmann P, Korolov I, Czarnetzki U, Schungel E 2010 Appl. Phys. Lett. 97 081501
[9] Heil B G, Czarnetzki U, Brinkmann R P, Mussenbrock T 2008 J. Phys. D: Appl. Phys. 41 165202
[10] Donko Z, Schulze J, Heil B G, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 025205
[11] Czarnetzki U, Heil B G, Schulze J, Donko Z, Mussenbrock T, Brinkmann R P 2009 J. Phys.: Conf. Ser. 162 012010
[12] Schulze J, Schungel E, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 092005
[13] Schungel E, Mohr S, Schulze J, Czarnetzki U, Kushner M J 2014 Plasma Sources Sci. Technol. 23 015001
[14] SchulzeJ, Schungel E, Czarnetzki U, Gebhardt M, Brinkmann R P, Mussenbrock T 2011 Appl. Phys. Lett. 98 031501
[15] Schulze J, Schungel E, Czarnetzki U, Donko Z 2009 J. Appl. Phys. 106 063307
[16] Schulze J, Schungel E, Donko Z, Czarnetzki U 2011 Plasma Sources Sci. Technol. 20 015017
[17] Lafleur T, Delattre P A, Johnson E V, Booth J P 2012 Appl. Phys. Lett. 101 124104
[18] Zhang Q Z, Jiang W, Hou L J, Wang Y N 2011 J. Appl. Phys. 109 013308
[19] Schungel E, Zhang Q Z, Iwashita S, Schulze J, Hou L J, Wang Y N, Czarnetzki U 2011 J. Phys. D: Appl. Phys. 44 285205
[20] Zhang Q Z, Zhao S X, Jiang W, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 305203
[21] Zhang Y T, Zafar A, Coumou D J, Shannon S C, Kushner M J 2015 J. Phys. D: Appl. Phys. 117 233302
[22] Schungel E, Mohr S, Schulze J, Czarnetzki U 2015 Appl. Phys. Lett. 106 054108
[23] Zhang Y R, Hu Y T, Gao F, Song Y H, Wang Y N 2018 Plasma Sources Sci. Technol. 27 055003
[24] Zhang Y R, Xu X, Bogaerts A, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 015202
[25] Zhang Y R, Xu X, Bogaerts A, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 015203
[26] Yoon J S, Song M Y, Han J M, Hwang S H, Chang W S, Lee B J, Itikawab Y 2008 J. Phys. Chem. Ref. Data 37 913
[27] Tawara H, Itikawa Y, Nishimura H, Yoshino M 1990 J. Phys. Chem. Ref. Data 19 617
[28] Salabas A, Brinkmann R P 2005 Plasma Sources Sci.Technol. 14 S53
[29] Chen Z, Rauf S, Collins K 2010 J. Appl. Phys. 108 073301
[30] Schungel E, Schulze J, Donko Z, Czarnetzki U 2011 Phys. Plasmas 18 013503
-
[1] Lieberman M A, Lichtenberg A J 2005 Principles of Plasma Discharges and Materials Processing (New York: Wiley) pp1-5
[2] Lee J K, Manuilenko O V, Babaeva N Y, Kim H C, Shon J W 2005 Plasma Sources Sci. Technol. 14 89
[3] Schulze J, Donko Z, Luggenholscher D, Czarnetzki U 2009 Plasma Sources Sci. Technol. 18 034011
[4] Kawamura E, Lieberman M A, Lichtenberg A J 2006 Phys. Plasmas 13 053506
[5] Turner M M, Chabert P 2006 Phys. Rev. Lett. 96 205001
[6] Booth J P, Curley G, Maric D, Chabert P 2010 Plasma Sources Sci. Technol. 19 015005
[7] SchulzeJ, Donko Z, Schungel E, Czarnetzki U 2011 Plasma Sources Sci. Technol. 20 045007
[8] Donko Z, Schulze J, Hartmann P, Korolov I, Czarnetzki U, Schungel E 2010 Appl. Phys. Lett. 97 081501
[9] Heil B G, Czarnetzki U, Brinkmann R P, Mussenbrock T 2008 J. Phys. D: Appl. Phys. 41 165202
[10] Donko Z, Schulze J, Heil B G, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 025205
[11] Czarnetzki U, Heil B G, Schulze J, Donko Z, Mussenbrock T, Brinkmann R P 2009 J. Phys.: Conf. Ser. 162 012010
[12] Schulze J, Schungel E, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 092005
[13] Schungel E, Mohr S, Schulze J, Czarnetzki U, Kushner M J 2014 Plasma Sources Sci. Technol. 23 015001
[14] SchulzeJ, Schungel E, Czarnetzki U, Gebhardt M, Brinkmann R P, Mussenbrock T 2011 Appl. Phys. Lett. 98 031501
[15] Schulze J, Schungel E, Czarnetzki U, Donko Z 2009 J. Appl. Phys. 106 063307
[16] Schulze J, Schungel E, Donko Z, Czarnetzki U 2011 Plasma Sources Sci. Technol. 20 015017
[17] Lafleur T, Delattre P A, Johnson E V, Booth J P 2012 Appl. Phys. Lett. 101 124104
[18] Zhang Q Z, Jiang W, Hou L J, Wang Y N 2011 J. Appl. Phys. 109 013308
[19] Schungel E, Zhang Q Z, Iwashita S, Schulze J, Hou L J, Wang Y N, Czarnetzki U 2011 J. Phys. D: Appl. Phys. 44 285205
[20] Zhang Q Z, Zhao S X, Jiang W, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 305203
[21] Zhang Y T, Zafar A, Coumou D J, Shannon S C, Kushner M J 2015 J. Phys. D: Appl. Phys. 117 233302
[22] Schungel E, Mohr S, Schulze J, Czarnetzki U 2015 Appl. Phys. Lett. 106 054108
[23] Zhang Y R, Hu Y T, Gao F, Song Y H, Wang Y N 2018 Plasma Sources Sci. Technol. 27 055003
[24] Zhang Y R, Xu X, Bogaerts A, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 015202
[25] Zhang Y R, Xu X, Bogaerts A, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 015203
[26] Yoon J S, Song M Y, Han J M, Hwang S H, Chang W S, Lee B J, Itikawab Y 2008 J. Phys. Chem. Ref. Data 37 913
[27] Tawara H, Itikawa Y, Nishimura H, Yoshino M 1990 J. Phys. Chem. Ref. Data 19 617
[28] Salabas A, Brinkmann R P 2005 Plasma Sources Sci.Technol. 14 S53
[29] Chen Z, Rauf S, Collins K 2010 J. Appl. Phys. 108 073301
[30] Schungel E, Schulze J, Donko Z, Czarnetzki U 2011 Phys. Plasmas 18 013503
计量
- 文章访问数: 6987
- PDF下载量: 81
- 被引次数: 0
下载:
