中国的表面物理

管丹丹; 贾金锋

doi:10.7498/aps.72.20231858

摘要

以中国科学院表面物理国家重点实验室为主线, 回顾了表面物理在中国的发展历程, 致敬为中国表面物理做出贡献的老一辈科学家. 通过回顾历史可以看出, 中国表面物理蓬勃发展, 不仅做出了很多国际先进水平的工作, 也培养了大批青年人才, 他们已经成为国际凝聚态物理研究的重要力量.

关键词:

In this paper, the development of surface physics in China is comprehensively reviewed, focusing on the State Key Laboratory of Surface Physics at the Chinese Academy of Sciences. It especially recognizes and honors the invaluable contributions made by the older generation of scientists in this field. By looking back at the history, it can be seen that the surface physics has developed vigorously in China: not only have many research papers with international advanced level been published, but also a large number of young talents have been cultivated, who have become an important force in the research of condensed matter physics internationally.

Keywords:

作者及机构信息

管丹丹¹,
贾金锋^1,2

1.
上海交通大学物理与天文学院, 人工结构及量子调控教育部重点实验室, 李政道研究所, 上海　200240

2.
南方科技大学物理系, 深圳　518055

通信作者: 贾金锋, jfjia@sjtu.edu.cn

基金项目: 国家重点研发计划(批准号: 2019YFA0308600)、科技创新重大项目(批准号: XDB28000000)和上海市科技重大专项(批准号: 2019SHZDZX01)资助的课题.

Authors and contacts

Guan Dan-Dan¹,
Jia Jin-Feng^1,2

1.
Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China

2.
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

Corresponding author: Jia Jin-Feng, jfjia@sjtu.edu.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2019YFA0308600), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and the Science and Technology Commission of Shanghai Municipality, China (Grants No. 2019SHZDZX01).

文章全文

参考文献

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施引文献

图 1 Si(111)表面生长出的全同铟(a)和铝(b)纳米点阵列

Fig. 1. Identical nanocluster arrays of In (a) and Al (b) grown on Si (111) surface.

下载: 全尺寸图片幻灯片

图 2 原子级平整的铅薄膜及其超导转变温度和电子态密度随厚度的振荡变化

Fig. 2. Pb films with atomic-scale uniformity, and the superconducting transition temperature T_c and the density of states N(E_F) as a function of Pb film thickness, demonstrating a nonmonotonic oscillatory behavior in both T_c and N(E_F).

下载: 全尺寸图片幻灯片

图 3 硒化铋薄膜以五原子层(QL)为单元生长, 从1 QL到6 QL薄膜的角分辨光电子能谱图(a)—(e)和对应的能量分布曲线(f)—(h), 可以清楚看到狄拉克表面态的能隙打开和Rashba型的劈裂^[24]

Fig. 3. ARPES spectra of Bi₂Se₃ films at room temperature: (a)–(e) ARPES spectra of 1-6 quintuple layer (QL), the Bi₂Se₃ films grow in QL-by-QL mode; (f)–(h) the energy distribution curves of (c)–(e) respectively, which clearly shows the opening of the energy gap and the Rashba-type splitting for Dirac surface states^[24].

下载: 全尺寸图片幻灯片

[1]	Yang W S, Jona F, Marcus P M 1983 Phys. Rev. B 27 1394 Google Scholar
[2]	Yang W S, Jona F, Marcus P M 1983 Phys. Rev. B 28 2049 Google Scholar
[3]	Jia J F, Zhao R G, and Yang W S 1993 Phys. Rev. B 48 18109 Google Scholar
[4]	Jia J F, Zhao R G, Yang W S 1993 Phys. Rev. B 48 18101 Google Scholar
[5]	贾金峰, 赵汝光, 杨威生 1992 物理学报 41 827 Google Scholar Jia J F, Zhao R G, Yang W S 1992 Acta Phys. Sin. 41 827 Google Scholar
[6]	Li J L, Jia J F, Liang X J, Liu X, Wang J Z, Xue Q K, Li Z Q, Tse J S, Zhang Z Y, Zhang S B 2002 Phys. Rev. Lett. 88 066101 Google Scholar
[7]	Jia J F, Wang J Z, Liu X, Xue Q K, Li Z Q, Kawazoe Y, Zhang S B 2002 Appl. Phys. Lett. 80 3186 Google Scholar
[8]	Jia J F, Liu X, Wang J Z, Li J L, Wang X S, Xue Q K, Li Z Q, Zhang Z Y, Zhang S B 2002 Phys. Rev. B 66 165412 Google Scholar
[9]	Xu Z, Bai X D, Wang Z L, Wang E G, 2006 J. Am. Chem. Soc. 128 1052 Google Scholar
[10]	Xu Z, Bai X D, Wang E G 2006 Appl. Phys. Lett. 88 133107 Google Scholar
[11]	Wang W L, Bai X D, Liu K H, Xu Z, Golberg D, Bando Y, Wang E G 2006 J. Am. Chem. Soc. 128 6530 Google Scholar
[12]	Guo Y, Zhang Y F, Bao X Y, Han T Z, Tang Z, Zhang L X, Zhu W G, Wang E G, Niu Q, Qiu Z Q, Jia J F, Zhao Z X, Xue Q K 2004 Science 306 1915 Google Scholar
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[14]	Zhang Y F, Tang Z, Han T Z, Ma X C, Jia J F, Xue Q K, Xun K, Wu S C 2007 Appl. Phys. Lett. 90 093120 Google Scholar
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[21]	Zhang G H, Qin H J, Teng J, Guo J D, Guo Q L, Dai X, Fang Z, Wu K H 2009 Appl. Phys. Lett. 95 053114 Google Scholar
[22]	Song C L, Wang Y L, Jiang Y P, Zhang Y, Chang C Z, Wang L L, He K, Chen X, Jia J F, Wang Y Y, Fang Z, Dai X, Xie X C, Qi X L, Zhang S C, Xue Q K, Ma X C 2010 Appl. Phys. Lett. 97 143118 Google Scholar
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[29]	Li J D, Li J X, Tang J L, Tao Z Y, Xue S W, Liu J X, Peng H L, Chen X Q, Guo J D, Zhu X T 2023 Phys. Rev. Lett. 131 116602 Google Scholar
[30]	Zhang X, Xu J Y, Tu Y B, Sun K, Tao M L, Xiong Z H, Wu K H, Wang J Z, Xue Q K, Meng S 2018 Phys. Rev. Lett. 121 256001 Google Scholar
[31]	Yang K, Chen H, Pope T, et al. 2019 Nat. Commun. 10 3599 Google Scholar
[32]	Zhang Q, Gao A, Meng F, et al. 2021 Nat. Commun. 12 1853 Google Scholar

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