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利用深能级瞬态谱(DLTS)、傅里叶变换红外光谱(FT-IR)对GaN以及GaN掺Er/Pr的样品进行了 电学和光学特性分析.研究发现未掺杂的GaN样品只在导带下0.270eV处有一个深能级;GaN注 入Er经900℃,30min退火后的样品出现了四个深能级,能级位置位于导带下0.300 eV,0.188 eV,0.600 eV 和0.410 eV;GaN注入Pr经1050℃,30min退火后的样品同样出现了四个深能级 ,能级位置位于导带下0.280 eV,0.190 eV,0.610 eV 和0.390 eV;对每一个深能级的来源 进行了讨论.光谱研究表明,掺Er的GaN样品经900℃,30min退火后,可以观察到Er的1538nm 处的发光,而且对能量输运和发光过程进行了讨论.Deep level transient spectroscopy measurements were used to characterize the ele ctrical properties of metal organic chemical vapor deposition grown undoped, Er- implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV be low the conduction band was found in the as-grown GaN films. But four defect le vels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction b and were found in the Er-implanted GaN films after annealing at 900 ℃ for 30 mi n, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV b elow the conduction band were found in the Pr-implanted GaN films after annealin g at 1050 ℃ for 30min. The origins of the deep defect levels are discussed. Aft er annealing at 900℃ for 30min in a nitrogen flow, Er-related 1538nm luminescen ce peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.
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Keywords:
- GaN /
- Er /
- Pr-implautation /
- deep level transient spectroscopy
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