搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

溅射制备纳米晶GaN∶Er薄膜的室温发光特性

潘孝军 张振兴 王 涛 李 晖 谢二庆

引用本文:
Citation:

溅射制备纳米晶GaN∶Er薄膜的室温发光特性

潘孝军, 张振兴, 王 涛, 李 晖, 谢二庆

Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering

Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing
PDF
导出引用
  • 利用直流磁控共溅射方法制备了GaN:Er薄膜.X射线衍射结果显示薄膜为纳米多晶结构,根据谢乐公式,计算得到了GaN薄膜晶粒的平均大小为58nm;透射电子显微镜结果显示为非晶基质中镶嵌了GaN纳米颗粒,尺寸在6—8nm之间;紫外可见谱结果表明在500—700nm的可见光范围内,薄膜的平均透过率大于80%,在紫外可见谱基础上,利用Tauc公式计算得到了纳米晶GaN薄膜的光学带隙为322eV;最后,测量了GaN:Er薄膜的室温光致发光谱,获得了Er3+离子在554nm处的强烈绿光发射.
    GaN:Er thin film has been prepared by direct current (DC) planar magnetron reactive sputtering deposition. The film was characterized by X-ray diffraction (XRD), ultraviolet—visible (UV—Vis) spectroscopy, transmission electron microscope (TEM) and photoluminescence (PL) spectroscopy, XRD shows the structure of the film was nano/poly-crystalline. The average grain size of the film was derived from XRD peaks using the Scherrer formula and the value was 58nm. TEM result indicated that the film was GaN nano-particles embed in amorphous matrix and the particle size was between 6—8nm. UV—Vis transmission spectrum shows that the transmission ratio of the film exceeds 80% in the visible zone from 500nm to 700nm. From UV-Vis spectrum, the optical band gap of the film was calculated using Tauc plot and the value was 322eV. Last, PL was measured by fluorescence spectrometer at room temperature and green emission of Er3+ ions was clearly observed for the transition: 4S3/2(2H11/2)—4I15/2(554nm).
    • 基金项目: 教育部新世纪优秀人才支持计划(批准号:NCET-04-0975)资助的课题.
计量
  • 文章访问数:  7246
  • PDF下载量:  1174
  • 被引次数: 0
出版历程
  • 收稿日期:  2007-09-27
  • 修回日期:  2007-11-18
  • 刊出日期:  2008-03-05

/

返回文章
返回