搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

锗硅异质结双极晶体管单粒子效应加固设计与仿真

李培 郭红霞 郭旗 文林 崔江维 王信 张晋新

引用本文:
Citation:

锗硅异质结双极晶体管单粒子效应加固设计与仿真

李培, 郭红霞, 郭旗, 文林, 崔江维, 王信, 张晋新

Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor

Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin
PDF
导出引用
  • 本文设计了一种通过在版图布局中引入伪集电极的方法来提高锗硅异质结双极晶体管(SiGe HBT)抗单粒子性能的方法. 利用半导体器件模拟工具, 针对加固前后的SiGe HBT开展了单粒子效应仿真模拟, 分析了伪集电极对SiGe HBT电荷收集机理的影响. 结果表明, 引入的伪集电极形成的新的集电极-衬底结具有较大的反偏能力, 加固后SiGe HBT伪集电极通过扩散机理, 大量收集单粒子效应产生的电荷, 有效地减少了实际集电极的电荷收集量, 发射极、基极电荷收集量也有不同程度的降低, 加固设计后SiGe HBT 的单粒子效应敏感区域缩小, 有效的提高了SiGe HBT 器件抗单粒子效应辐射性能. 此项工作的开展为SiGe HBT电路级单粒子效应抗辐射加固设计打下良好的基础.
    With the rapid development of satellite, manned space flight and deep space exploration technology, semiconductor devices are used in extreme environments, especially in radiation and low temperature environment. SiGe HBT is a potential candidate for space applications because of its inherent robustness to total ionizing dose (TID) radiation. However, due primarily to charge collection through the collector-substrate (CS) junction and the relatively low substrate doping., SiGe HBTs are vulnerable to single event effects (SEEs) because of new features of process and structure. Thus, the SEE becomes a key factor in restricting space applications of SiGe HBTs. This paper presents an SEE hardening approach that uses a dummy collector to reduce charge collection in the SiGe HBT. The dummy collector is obtained by using the silicon space between adjacent HBTs. It is obtained without any process modification or area penalty. At first, we build simulation models for both normal and hardened SiGe HBTs, and then carry out SEE simulations respectively. The charge collection mechanism is obtained by analyzing the transient current and charge collection changes at different ion incident positions. Unlike the normal HBT, we can see that charge is continuously collected by the dummy CS junction. This causes more charges diffuse outward and the charges available for collector terminal to be reduced. For all ion incident positions, in the case of hardening, the drift components of charge collection are approximately the same, while the diffusion charge collection components are nearly completely compressed. During SEE, the CS junction either directly collects the deposited charges through drift within the potential funnel or indirectly collects charges after they have arrived at the junction after diffusion. The diffusion length of the carriers is on the order of tens of microns or more. Hence a dummy CS junction should be able to reduce the quantity of diffusive charges collected by the HBT collector. The actual charges collected by the collector are effectively reduced. The emitter and base charge collection also decrease by the dummy collector to different extents. Dummy-collector effectively mitigates the SEE of SiGe HBT. The SEE sensitive area of SiGe HBT is also effectively reduced by half. This work is carried out for the SiGe HBT circuit level radiation hardening design of single event effects
    • 基金项目: 国家自然科学基金(批准号:61274106)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61274106).
    [1]

    Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 1992

    [2]

    Cressler J D 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Santa Barbara, October 9-11, 2005 p248

    [3]

    Cressler J D, Niu G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood:Artech House) pp95-182

    [4]

    Babcock J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Harame D L 1995 IEEE Trans. Nucl. Sci. 42 1558

    [5]

    Lu Y, Cressler J D, Krithivasan R, Li Y, Reed R A, Marshall P W, Polar C, Freeman G, Ahlgren D 2003 IEEE Trans. Nucl. Sci. 50 1811

    [6]

    Sutton A K, Haugerud B M, Prakash A P G, Jun B, Cressler J D, Marshall C J, Marshall P W, Ladbury R, Joseph A J 2005 IEEE Trans. Nucl. Sci. 52 2358

    [7]

    Sutton A K, Prakash A P G, Jun B, Enhai Zhao, Bellini M, Pellish J, Diestelhorst R M, Carts M A, Phan A, Ladbury R, Cressler J D, Marshall P W, Marshall C J, Reed R A, Schrimpf R D, Fleetwood D M 2006 IEEE Trans. Nucl. Sci. 53 3166

    [8]

    Krithivasan R, Niu G F, Cressler J D, Currie S M, Fritz K E, Reed R A, Marshall P W, Riggs P A, Randall B A, Gilbert B 2003 IEEE Trans. Nucl. Sci. 50 2126

    [9]

    Krithivasan R, Marshall P W, Nayeem M, Sutton A K, Wei-Min Kuo, Haugerud B M, Najafizadeh L, Cressler J D, Carts M A, Marshall C J, Hansen D L, Jobe K C M, McKay A L, Niu G F, Reed R A, Randall B A, Burfield C A, Lindberg M D, Gilbert B K, Daniel E S IEEE Trans. Nucl. Sci. 53 3400

    [10]

    Reed R A, Marshall P W, Pickel J C, Carts M A, Fodness B, Niu G F, Fritz K, Vizkelethy G, Dodd P E, Irwin T L, Cressler J D, Krithivasan R, Riggs P A, Prairie J, Randall B A, Gilbert B K, Label K A 2003 IEEE Trans. Nucl. Sci. 50 2184

    [11]

    Sutton A K, Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G F, Vizkelethy G, Turowski M, Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044

    [12]

    Marshall P W, Carts M A, Campbell A, McMorrow D, Buchner S, Stewart Ryan, Randall B, Gilbert Barry, Reed R A IEEE Trans. Nucl. Sci. 47 2669

    [13]

    Niu G F, Yang H, Varadharajaperumal M, Shi Y, Cressler J D, Krithivasan R, Marshall P W, Reed R A 2005 IEEE Trans. Nucl. Sci. 52 2153

    [14]

    Varadharajaperumal M, Niu G F, Wei X Y, Zhang T, Cressler J D, Reed R A, Marshall P W 2007 IEEE Trans. Nucl. Sci. 54 2330

    [15]

    Varadharajaperumal M 2010 Ph.D. Dissertation (Alabama:Auburn University)

    [16]

    Sutton A K, Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G f, Vizkelethy G, Turowski M, Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044

    [17]

    Phillips S D, Moen K A, Najafizadeh L, Diestelhorst R M, Sutton A K, Cressler J D, Vizkelethy G, Dodd P E, Marshall P W 2010 IEEE Trans. Nucl. Sci. 57 3400

    [18]

    Zhang T 2009 MS Dissertation (Alabama:Auburn University)

    [19]

    Phillips S D 2012 Ph.D. Dissertation (Georgia:Georgia Institute of Technology)

    [20]

    Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]

    [21]

    Lai F, Hu G Y 2013 Microelectronics 43 0094 (in Chinese) [赖凡, 胡刚毅 2013 微电子学 43 0094]

    [22]

    Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 59 064906 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 物理学报 59 064906]

    [23]

    Sun Y B, Fu J, Xu J, Wang Y D, Zhou W, Zhang W, Cui J, Li G Q, Liu Z H 2013 Acta Phys. Sin. 62 196104 (in Chinese) [孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘 2013 物理学报 62 196104]

  • [1]

    Cressler J D 2013 IEEE Trans. Nucl. Sci. 60 1992

    [2]

    Cressler J D 2005 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting Santa Barbara, October 9-11, 2005 p248

    [3]

    Cressler J D, Niu G F 2003 Silicon-germanium heterojunction bipolar transistors (Norwood:Artech House) pp95-182

    [4]

    Babcock J A, Cressler J D, Vempati L S, Clark S D, Jaeger R C, Harame D L 1995 IEEE Trans. Nucl. Sci. 42 1558

    [5]

    Lu Y, Cressler J D, Krithivasan R, Li Y, Reed R A, Marshall P W, Polar C, Freeman G, Ahlgren D 2003 IEEE Trans. Nucl. Sci. 50 1811

    [6]

    Sutton A K, Haugerud B M, Prakash A P G, Jun B, Cressler J D, Marshall C J, Marshall P W, Ladbury R, Joseph A J 2005 IEEE Trans. Nucl. Sci. 52 2358

    [7]

    Sutton A K, Prakash A P G, Jun B, Enhai Zhao, Bellini M, Pellish J, Diestelhorst R M, Carts M A, Phan A, Ladbury R, Cressler J D, Marshall P W, Marshall C J, Reed R A, Schrimpf R D, Fleetwood D M 2006 IEEE Trans. Nucl. Sci. 53 3166

    [8]

    Krithivasan R, Niu G F, Cressler J D, Currie S M, Fritz K E, Reed R A, Marshall P W, Riggs P A, Randall B A, Gilbert B 2003 IEEE Trans. Nucl. Sci. 50 2126

    [9]

    Krithivasan R, Marshall P W, Nayeem M, Sutton A K, Wei-Min Kuo, Haugerud B M, Najafizadeh L, Cressler J D, Carts M A, Marshall C J, Hansen D L, Jobe K C M, McKay A L, Niu G F, Reed R A, Randall B A, Burfield C A, Lindberg M D, Gilbert B K, Daniel E S IEEE Trans. Nucl. Sci. 53 3400

    [10]

    Reed R A, Marshall P W, Pickel J C, Carts M A, Fodness B, Niu G F, Fritz K, Vizkelethy G, Dodd P E, Irwin T L, Cressler J D, Krithivasan R, Riggs P A, Prairie J, Randall B A, Gilbert B K, Label K A 2003 IEEE Trans. Nucl. Sci. 50 2184

    [11]

    Sutton A K, Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G F, Vizkelethy G, Turowski M, Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044

    [12]

    Marshall P W, Carts M A, Campbell A, McMorrow D, Buchner S, Stewart Ryan, Randall B, Gilbert Barry, Reed R A IEEE Trans. Nucl. Sci. 47 2669

    [13]

    Niu G F, Yang H, Varadharajaperumal M, Shi Y, Cressler J D, Krithivasan R, Marshall P W, Reed R A 2005 IEEE Trans. Nucl. Sci. 52 2153

    [14]

    Varadharajaperumal M, Niu G F, Wei X Y, Zhang T, Cressler J D, Reed R A, Marshall P W 2007 IEEE Trans. Nucl. Sci. 54 2330

    [15]

    Varadharajaperumal M 2010 Ph.D. Dissertation (Alabama:Auburn University)

    [16]

    Sutton A K, Bellini M, Cressler J D, Pellish J A, Reed R A, Marshall P W, Niu G f, Vizkelethy G, Turowski M, Raman A 2007 IEEE Trans. Nucl. Sci. 54 2044

    [17]

    Phillips S D, Moen K A, Najafizadeh L, Diestelhorst R M, Sutton A K, Cressler J D, Vizkelethy G, Dodd P E, Marshall P W 2010 IEEE Trans. Nucl. Sci. 57 3400

    [18]

    Zhang T 2009 MS Dissertation (Alabama:Auburn University)

    [19]

    Phillips S D 2012 Ph.D. Dissertation (Georgia:Georgia Institute of Technology)

    [20]

    Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 物理学报 62 048501]

    [21]

    Lai F, Hu G Y 2013 Microelectronics 43 0094 (in Chinese) [赖凡, 胡刚毅 2013 微电子学 43 0094]

    [22]

    Liu Z, Chen S M, Liang B, Liu B W, Zhao Z Y 2010 Acta Phys. Sin. 59 064906 (in Chinese) [刘征, 陈书明, 梁斌, 刘必慰, 赵振宇 2010 物理学报 59 064906]

    [23]

    Sun Y B, Fu J, Xu J, Wang Y D, Zhou W, Zhang W, Cui J, Li G Q, Liu Z H 2013 Acta Phys. Sin. 62 196104 (in Chinese) [孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘 2013 物理学报 62 196104]

  • [1] 琚安安, 郭红霞, 张凤祁, 刘晔, 欧阳晓平, 丁李利, 卢超, 张鸿, 冯亚辉, 钟向丽. N阱电阻的单粒子效应仿真研究. 物理学报, 2023, 0(0): 0-0. doi: 10.7498/aps.72.20220125
    [2] 周书星, 方仁凤, 魏彦锋, 陈传亮, 曹文彧, 张欣, 艾立鹍, 李豫东, 郭旗. 磷化铟高电子迁移率晶体管外延结构材料抗电子辐照加固设计. 物理学报, 2022, 71(3): 037202. doi: 10.7498/aps.71.20211265
    [3] 傅婧, 蔡毓龙, 李豫东, 冯婕, 文林, 周东, 郭旗. 质子辐照下正照式和背照式图像传感器的单粒子瞬态效应. 物理学报, 2022, 71(5): 054206. doi: 10.7498/aps.71.20211838
    [4] 沈睿祥, 张鸿, 宋宏甲, 侯鹏飞, 李波, 廖敏, 郭红霞, 王金斌, 钟向丽. 全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元单粒子效应计算机模拟研究. 物理学报, 2022, 71(6): 068501. doi: 10.7498/aps.71.20211655
    [5] 张晋新, 王信, 郭红霞, 冯娟, 吕玲, 李培, 闫允一, 吴宪祥, 王辉. 三维数值仿真研究锗硅异质结双极晶体管总剂量效应. 物理学报, 2022, 71(5): 058502. doi: 10.7498/aps.71.20211795
    [6] 张晋新, 王信, 郭红霞, 冯娟. 基于三维数值仿真的SiGe HBT总剂量效应关键影响因素机理研究. 物理学报, 2021, (): . doi: 10.7498/aps.70.20211795
    [7] 韩金华, 覃英参, 郭刚, 张艳文. 一种二进制降能器设计方法. 物理学报, 2020, 69(3): 033401. doi: 10.7498/aps.69.20191514
    [8] 王勋, 张凤祁, 陈伟, 郭晓强, 丁李利, 罗尹虹. 中国散裂中子源在大气中子单粒子效应研究中的应用评估. 物理学报, 2019, 68(5): 052901. doi: 10.7498/aps.68.20181843
    [9] 韩金华, 郭刚, 刘建成, 隋丽, 孔福全, 肖舒颜, 覃英参, 张艳文. 100 MeV质子双环双散射体扩束方案设计. 物理学报, 2019, 68(5): 054104. doi: 10.7498/aps.68.20181787
    [10] 赵雯, 郭晓强, 陈伟, 邱孟通, 罗尹虹, 王忠明, 郭红霞. 质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析. 物理学报, 2015, 64(17): 178501. doi: 10.7498/aps.64.178501
    [11] 刘静, 郭飞, 高勇. 超结硅锗碳异质结双极晶体管机理研究与特性分析优化. 物理学报, 2014, 63(4): 048501. doi: 10.7498/aps.63.048501
    [12] 肖尧, 郭红霞, 张凤祁, 赵雯, 王燕萍, 丁李利, 范雪, 罗尹虹, 张科营. 累积剂量影响静态随机存储器单粒子效应敏感性研究. 物理学报, 2014, 63(1): 018501. doi: 10.7498/aps.63.018501
    [13] 张晋新, 贺朝会, 郭红霞, 唐杜, 熊涔, 李培, 王信. 不同偏置影响锗硅异质结双极晶体管单粒子效应的三维数值仿真研究. 物理学报, 2014, 63(24): 248503. doi: 10.7498/aps.63.248503
    [14] 孙亚宾, 付军, 许军, 王玉东, 周卫, 张伟, 崔杰, 李高庆, 刘志弘. 不同剂量率下锗硅异质结双极晶体管电离损伤效应研究. 物理学报, 2013, 62(19): 196104. doi: 10.7498/aps.62.196104
    [15] 张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟. 重离子导致的锗硅异质结双极晶体管单粒子效应电荷收集三维数值模拟. 物理学报, 2013, 62(4): 048501. doi: 10.7498/aps.62.048501
    [16] 赵赓, 程晓曼, 田海军, 杜博群, 梁晓宇, 吴峰. V2O5电极修饰对C60/Pentacene双层异质结场效应晶体管性能的影响. 物理学报, 2012, 61(21): 218502. doi: 10.7498/aps.61.218502
    [17] 刘必慰, 陈建军, 陈书明, 池雅庆. 带有n+深阱的三阱CMOS工艺中寄生NPN双极效应及其对电荷共享的影响. 物理学报, 2012, 61(9): 096102. doi: 10.7498/aps.61.096102
    [18] 刘凡宇, 刘衡竹, 刘必慰, 梁斌, 陈建军. 90 nm CMOS工艺下p+深阱掺杂浓度对电荷共享的影响. 物理学报, 2011, 60(4): 046106. doi: 10.7498/aps.60.046106
    [19] 蔡明辉, 韩建伟, 李小银, 李宏伟, 张振力. 临近空间大气中子环境的仿真研究. 物理学报, 2009, 58(9): 6659-6664. doi: 10.7498/aps.58.6659
    [20] 张兴宏, 胡雨生, 吴 杰, 程知群, 夏冠群, 徐元森, 陈张海, 桂永胜, 褚君浩. 深能级对AlGaInP/GaAs异质结双极晶体管性能的影响. 物理学报, 1999, 48(3): 556-560. doi: 10.7498/aps.48.556
计量
  • 文章访问数:  3320
  • PDF下载量:  182
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-09-21
  • 修回日期:  2015-01-16
  • 刊出日期:  2015-06-05

锗硅异质结双极晶体管单粒子效应加固设计与仿真

  • 1. 中国科学院特殊环境功能材料与器件重点实验室; 新疆电子信息材料与器件重点实验室; 中国科学院新疆理化技术研究所件, 乌鲁木齐 830011;
  • 2. 中国科学院大学, 北京 100049;
  • 3. 西北核技术研究所, 西安 710024;
  • 4. 西安交通大学, 西安 710049
    基金项目: 国家自然科学基金(批准号:61274106)资助的课题.

摘要: 本文设计了一种通过在版图布局中引入伪集电极的方法来提高锗硅异质结双极晶体管(SiGe HBT)抗单粒子性能的方法. 利用半导体器件模拟工具, 针对加固前后的SiGe HBT开展了单粒子效应仿真模拟, 分析了伪集电极对SiGe HBT电荷收集机理的影响. 结果表明, 引入的伪集电极形成的新的集电极-衬底结具有较大的反偏能力, 加固后SiGe HBT伪集电极通过扩散机理, 大量收集单粒子效应产生的电荷, 有效地减少了实际集电极的电荷收集量, 发射极、基极电荷收集量也有不同程度的降低, 加固设计后SiGe HBT 的单粒子效应敏感区域缩小, 有效的提高了SiGe HBT 器件抗单粒子效应辐射性能. 此项工作的开展为SiGe HBT电路级单粒子效应抗辐射加固设计打下良好的基础.

English Abstract

参考文献 (23)

目录

    /

    返回文章
    返回