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离子注入硅的椭圆偏振光谱和光性

莫党 叶贤京

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离子注入硅的椭圆偏振光谱和光性

莫党, 叶贤京

ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICON

MO DANG, YE XIAN-JING
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  • 为了进一步发展测定离子注入损伤层的椭圆偏光法,我们测量了离子注入硅在4000—7000?波长范围内的椭圆偏振光谱,并由此得到它的色散关系。注入条件为150keV,1015cm-2和1016cm-2的砷离子注入。由于在硅样品表面处形成无定形层,我们用单层模型,从(ψ,Δ)-λ数据计算出(n,k)-λ关系,并可定出损伤层厚度。在~4800?处,出现折射率n的谱峰,峰值约4.9。本文还比较了离子注入损伤层、溅射无定形硅膜层、蒸发无定形硅膜层和单晶硅的实验结果。
    In order to develop the ellipsometry used for determination of ion implanted damage layer, we have measured the ellipsometric spectrum of ion implanted silicon in a wavelength range of 4000-7000?. The samples were implanted by 150 keV, l015/cm2 or 1016/cm2 As ions. In this case the amorphous layers were formed at the surface of Si samples, so that a monolayer model could be used to calculate the relations of (n, k)-λ from the data of (ψ, Δ)-λ. The peak of n-λ curve of As ion implanted silicon is situated at ~4800?, and the peak value is about 4.9. The experimental results of ion implanted silicon have been compared with those of sputtering amorphous silicon, evaporated amorphous silicon and single crystalline silicon.
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出版历程
  • 收稿日期:  1981-02-26
  • 刊出日期:  1981-05-05

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