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使用三氟甲烷和苯的混合气体,利用微波电子回旋共振等离子体增强化学气相沉积法制备了F/C比在0.11—0.62之间的α-C∶F薄膜.研究了微波功率对薄膜沉积和结构的影响,发现微波功率的升高提高了薄膜的沉积速率,降低了薄膜的F/C比,也降低了薄膜中CF和CF3基团的密度,而使CF2基团的密度保持不变.在高微波功率下可以获得主要由CF2基团和C=C结构组成的α-C∶F薄膜.薄膜的介电频率关系(1×103—1×106Hz)和损耗频率关系(1×102—1×105Hz)均呈指数规律减小,是缺陷中心间简单隧穿引起的跳跃导电所致.α-C∶F薄膜的介电极化主要来源于电子极化Amorphous fluorinated carbon (α-C∶F) films with F/C ratios between 0.11 and 0.62 are prepared by microwave electron cyclotron resonance plasma enhanced chemical vapor deposition using trifluoromethane (CHF3) and benzene (C6H6) as source gases.The effect of microwave input powers on the deposition rates,F/C ratios and the bond configurations of films is analyzed by film thickness measured, Fourier transform infrared and X-ray photoelectron spectroscopy analysis.The increase of microwave power results in the increase of deposition rate,the decrease of F/C ratios,and the abundance of CF and CF3 groups of the films.The abundance of CF2 groups almost does not vary as microwave power increases.The films are mainly composed of CF2 groups and CC bonds can be obtained at higher microwave power.The frequency dependence of ε(1×103—1×106Hz) and tan δ(1×102—1×105Hz)all follow a power law.The electron polarization is the main contributor to dielectric polarization of film.
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Keywords:
- C∶F films /
- ECR plasma deposition /
- bond configurations /
- dielectric properties
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