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We realized the growth of terahertz quantum-cascade laser (THz QCL) by gas source molecular beam epitaxy (GSMBE). Electrochemical capacitance-voltage method, Hall measurement and high-resolution x-ray diffraction were used to evaluate the crystalline quality of the THz QCL active region. Meanwhile, we used an ensemble Monte Carlo method to investigate the carrier transport characteristics in a resonant-phonon THz QCL. Level alignment and electron motion under different applied biases are discussed in detail.
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Keywords:
- terahertz /
- quantum-cascade laser /
- molecular beam epitaxy /
- x-ray diffraction
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