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本文在研究IMOS器件结构的基础上, 分析了该器件不同区域的表面电场, 结合雪崩击穿条件, 建立了P-IMOS的阈值电压解析模型. 应用MATLAB对该器件阈值电压模型与源漏电压、栅长和硅层厚度的关系进行了数值分析, 并用二维器件仿真工具ISE进行了验证. 结果表明, 源电压越大, 阈值电压值越小; 栅长所占比例越大, 阈值电压值越小, 硅层厚度越小, 阈值电压值越小. 本文提出的模型与ISE仿真结果一致, 也与文献报道符合. 这种新型高速半导体器件IMOS阈值电压解析模型的建立为该高性能器件及对应电路的设计、仿真和制造提供了重要的参考.A threshold voltage model is created by analyzing differents distributions of surface electric field and the condition of avalanche breakdown, based on the structure of a novel high speed semiconductor device p-IMOS in this paper. Model verification is carried out using the 2D device simulator ISE. By analyzing the model, the dependences of threshold voltage on drain-source voltage, Si layer thickness and gate length are studied. The results of the model are in good agreement with experimental results and ISE simulation results. The proposed model can also be easily used for the reasonable analysis and the design of p-IMOS.
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Keywords:
- IMOS /
- subthreshold swing /
- avalanche breakdown /
- threshold voltage
[1] Lundstrom M 2003 IEEE International Electron Devices Meeting Washington, DC, USA, 8—10 Dec. 2003, p789
[2] Choi W Y, Choi B Y, Woo D S, Lee J D, Park B G 2003 IEEE Trans. Nanotechnol 2 210
[3] Gopalakrishnan K, Griffin P B, Plummer J D 2002 IEEE International Electron Devices Meeting San Francisco, CA, USA 8—11 Dec. 2002 p289
[4] Gopalakrishnan K, Griffin P B, Plummer J, Woo R, Jungemann C 2005 IEEE Trans. Electron Devices 52 77
[5] Choi W Y, Choi B Y, Lee J D, Woo D S, Park B J 2004 Device Research Conference Notre Dame, IN, USA June 2004, p211
[6] Choi W Y, Song J Y, Choi B Y, Lee J D, Park Y J, Park B J 2004 International Electron Devices Meeting San Francisco, CA, USA 13—15 Dec. 2004 p203
[7] Choi W Y, Lee J D, Park B G 2006 Journal of Semiconductor Technology and Science 6 43
[8] Gopalakrishnan K, Woo R, Jungemann C, Griffin P B, Plummer J 2005 IEEE Trans. Electron Devices 52 69
[9] Hou C S, Wu C Y 1995 IEEE Trans. Electron Devices 42 2156
[10] Li Y P, Xu J P, Chen W B, Zou X 2005 Microelectronics 35 0040 (in Chinese) [李艳萍, 徐静平, 陈卫兵, 邹 晓 2005 微电子学 35 0040]
[11] Li Y P, Xu J P, Chen W B, Ji F 2006 Acta Phys.Sin. 55 3670 (in Chinese) [李艳萍, 徐静平, 陈卫兵, 许胜国, 季峰 2006 物理学报 55 3670]
[12] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys.Sin. 56 3504 (in Chinese) [张鹤鸣, 崔晓英, 胡辉勇, 戴显英, 宣荣喜 2007 物理学报 56 3504]
[13] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[14] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[15] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Chin. Phys. 60 058502
[16] Hassani F A, Fathipour M, Mehran M 2007 IEEE AFRICON Windhoek, South Africa September 26—28, 2007
[17] Mayer F, Royer C L, Carval G L, Clavelier L, Deleonibus S 2006 IEEE Trans. Electron Devices 53 1852
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[1] Lundstrom M 2003 IEEE International Electron Devices Meeting Washington, DC, USA, 8—10 Dec. 2003, p789
[2] Choi W Y, Choi B Y, Woo D S, Lee J D, Park B G 2003 IEEE Trans. Nanotechnol 2 210
[3] Gopalakrishnan K, Griffin P B, Plummer J D 2002 IEEE International Electron Devices Meeting San Francisco, CA, USA 8—11 Dec. 2002 p289
[4] Gopalakrishnan K, Griffin P B, Plummer J, Woo R, Jungemann C 2005 IEEE Trans. Electron Devices 52 77
[5] Choi W Y, Choi B Y, Lee J D, Woo D S, Park B J 2004 Device Research Conference Notre Dame, IN, USA June 2004, p211
[6] Choi W Y, Song J Y, Choi B Y, Lee J D, Park Y J, Park B J 2004 International Electron Devices Meeting San Francisco, CA, USA 13—15 Dec. 2004 p203
[7] Choi W Y, Lee J D, Park B G 2006 Journal of Semiconductor Technology and Science 6 43
[8] Gopalakrishnan K, Woo R, Jungemann C, Griffin P B, Plummer J 2005 IEEE Trans. Electron Devices 52 69
[9] Hou C S, Wu C Y 1995 IEEE Trans. Electron Devices 42 2156
[10] Li Y P, Xu J P, Chen W B, Zou X 2005 Microelectronics 35 0040 (in Chinese) [李艳萍, 徐静平, 陈卫兵, 邹 晓 2005 微电子学 35 0040]
[11] Li Y P, Xu J P, Chen W B, Ji F 2006 Acta Phys.Sin. 55 3670 (in Chinese) [李艳萍, 徐静平, 陈卫兵, 许胜国, 季峰 2006 物理学报 55 3670]
[12] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys.Sin. 56 3504 (in Chinese) [张鹤鸣, 崔晓英, 胡辉勇, 戴显英, 宣荣喜 2007 物理学报 56 3504]
[13] Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋, 张鹤鸣, 胡辉勇, 宣荣喜, 宋建军 2009 物理学报 58 4948]
[14] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 117309
[15] Qu J T, Zhang H M, Wang G Y, Wang X Y, Hu H Y 2011 Chin. Phys. 60 058502
[16] Hassani F A, Fathipour M, Mehran M 2007 IEEE AFRICON Windhoek, South Africa September 26—28, 2007
[17] Mayer F, Royer C L, Carval G L, Clavelier L, Deleonibus S 2006 IEEE Trans. Electron Devices 53 1852
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