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Ga-doped ZnO nanostructures with various doping concentrations are prepared by using carbon thermal reduction reaction and in situ doping method. X-ray diffraction measurement reveals only wurzite structures existing in Ga-doped ZnO nanostructures. Scaning electron microscopy observations show that with the increase of Ga doping concentration, the morphology of ZnO nanstrucuture varies gradually from nanorods to nanocones. From the photoluminescence, we find that the visible light emission of ZnO nanostructures can be suppressed obviously and even disappears with the increase of Ga doping concentration. Moreover, the suppression of visible light emission is correlated well with the behavior, and X-ray photoelectron spectroscopy measurement reveals that the vacancy oxygen in ZnO nanostructure decreases drastically with the increase of Ga doping concentration. This result offers a new strong evidence for the mechanism that the visible light emission of ZnO nanostructures is caused by the oxygen vacancy defects. This work also demonstrates that a little Ga incorporation into ZnO nanostructures can effectively reduce the oxygen vacancy defects occurring.
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Keywords:
- Ga doping /
- ZnO nanostructures /
- photoluminescence /
- oxygen vacancy
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[23] Chang L W, Yeh J W, Cheng C L, Shieu F S, Shih H C 2011 Appl. Surf. Sci. 257 3145
[24] Song Y W, Lee S Y 2009 Thin Solid Films 518 1323
[25] Lee S Y, Song Y W, Jeon K A 2008 J. Cryst. Growth 310 4477
[26] Zhu L P, Li J S, Ye Z Z, He H P, Chen X J, Zhao B H 2008 Opt. Mater. 31 237
[27] Wang H H, Baek S, Song J J, Lee J, Lim S W 2008 Nanotechnology 19 075607
[28] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540
[29] Patra M K, Manzoor K, Manoth M, Vadera S P, Kumar N 2008 J. Lumin. 128 267
[30] Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q, Hou J G 2005 Nanotechnology 16 1069
[31] Pan N, Wang X P, Li M, Li F Q, Hou J G 2007 J. Phys. Chem. C 111 17265
[32] Chen M, Wang X, Yu Y H, Pei Z L, Bai X D, Sun C, Huang R F, Wen L S 2000 Appl. Surf. Sci. 158 134
[33] Escobedo-Morales A, Pal U 2008 Appl. Phys. Lett. 93 193120
[34] Zhang S B, Wei S H, Alex Z 2001 Phys. Rev. B 63 075205
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[1] Ahsanulhaq Q, Umar A, Hahn Y B 2007 Nanotechnology 18 115603
[2] Shen G Z, Chen P C, Ryu K M, Zhou C W 2009 J. Mater. Chem. 19 828
[3] Song J H, Wang X D, Riedo E, Wang Z L 2005 J. Phys. Chem. B 109 9869
[4] Umar A, Karunagaran B, Suh E K, Hahn Y B 2006 Nanotechnology 17 4072
[5] Liu J Z, Ahn Y H, Park J Y, Koh K H, Lee S 2009 Nanotechnology 20 5203
[6] Djurišić A B, Ng A M C, Chen X Y 2010 Prog. Quant. Electron. 34 191
[7] Djurišić A B, Leung Y H 2006 Small 2 944
[8] Zhang G B, Shi C S, Han Z F, Shi J Y, Fu Z X, Kirm M, Zimmerer G 2001 Chin. Phys. Lett. 18 441
[9] Dai L, Chen X L, Wang W J, Zhou T, Hu B Q 2003 J. Phys. Condens. Matter 15 2221
[10] Qiu J, Li X, He W, Park S J, Kim H K, Hwang Y H, Lee J H, Kim Y D 2009 Nanotechnology 20 155603
[11] Guo C X, Fu Z X, Shi C S 1999 Chin. Phys. Lett. 16 146
[12] Chen X L, Xu C S, Liu Y X, Qiao H Q, Xu H T, Ning Y H, Liu Y C 2010 J. Nanosci. Nanotechnol. 10 2185
[13] Liu X, Wu X, Cao H, Chang R P H 2004 J. Appl. Phys. 95 3141
[14] Lin B X, Fu Z X, Jia Y B, Liao G H 2001 Acta Phys. Sin. 50 2208 (in Chinese) [林碧霞, 傅竹西, 贾云波, 廖桂红 2001 物理学报 50 2208]
[15] Garces N Y, Wang L, Bai L, Giles N C, Halliburton L E, Cantwell G 2002 Appl. Phys. Lett. 81 662
[16] Xue H Z, Pan N, Zeng R G, Li M, Sun X, Ding Z J, Wang X P, Hou J G 2009 J. Phys. Chem. C 113 12715
[17] McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101
[18] Ahn C H, Han W S, Kong B H, Cho H K 2009 Nanotechnology 20 015601
[19] Yuan G D, Zhang W J, Jie J S, Fan X, Tang J X, Shafiq I, Ye Z Z, Lee C S, Lee S T 2008 Adv. Mater. 20 168
[20] Zhou M J, Zhu H J, Jiao Y, Rao Y Y, Hark S, Liu Y, Peng L M, Li Q 2009 J. Phys. Chem. C 113 8945
[21] Zhong J, Muthukumar S, Chen Y, Lu Y, Ng H M, Jiang W, Garfunkel E L 2003 Appl. Phys. Lett. 83 3401
[22] Huang M H, Wu Y Y, Feick H, Tran N, Weber E, Yang P D 2001 Adv. Mater. 13 133
[23] Chang L W, Yeh J W, Cheng C L, Shieu F S, Shih H C 2011 Appl. Surf. Sci. 257 3145
[24] Song Y W, Lee S Y 2009 Thin Solid Films 518 1323
[25] Lee S Y, Song Y W, Jeon K A 2008 J. Cryst. Growth 310 4477
[26] Zhu L P, Li J S, Ye Z Z, He H P, Chen X J, Zhao B H 2008 Opt. Mater. 31 237
[27] Wang H H, Baek S, Song J J, Lee J, Lim S W 2008 Nanotechnology 19 075607
[28] Xu C X, Sun X W, Chen B J 2004 Appl. Phys. Lett. 84 1540
[29] Patra M K, Manzoor K, Manoth M, Vadera S P, Kumar N 2008 J. Lumin. 128 267
[30] Pan N, Wang X P, Zhang K, Hu H L, Xu B, Li F Q, Hou J G 2005 Nanotechnology 16 1069
[31] Pan N, Wang X P, Li M, Li F Q, Hou J G 2007 J. Phys. Chem. C 111 17265
[32] Chen M, Wang X, Yu Y H, Pei Z L, Bai X D, Sun C, Huang R F, Wen L S 2000 Appl. Surf. Sci. 158 134
[33] Escobedo-Morales A, Pal U 2008 Appl. Phys. Lett. 93 193120
[34] Zhang S B, Wei S H, Alex Z 2001 Phys. Rev. B 63 075205
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