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Strained Ge attracts attention of researchers for its high mobility and compatibility with Si technology. Based on the valence band model for compressively strained Ge/(001)Si1-xGex, the relationships between hole scattering, mobility, and Ge content (x) are established in this paper, including ionized impurity, acoustic phonon, non-polar optical phonon, total scattering rates, and the averaged and directional mobility of holes. Our quantitative data gained within the models can provide valuable references for the research of modified Ge materials physics and the design of the related devices.
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Keywords:
- Ge /
- strain /
- scattering /
- mobility
[1] Hassan A H A, Morris R J H, Mironov O A, Beanland R, Walker D, Huband S, Dobbie A, Myronov M, Leadley D R 2014 Appl. Phys. Lett. 104 132108
[2] Takaqi S, Takenaka M 2013 ECST 54 39
[3] Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 237102 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 237102]
[4] Lucovsky G, Kim J W, Nordlund D 2013 Microelectron Eng. 109 370
[5] Takenaka M, Zhang R, Takaqi S 2013 IEEE Int. Reliab. Phys. Symp. Proc. Monterey, CA, United States, April 14-18, 2013 p4C.11-4C.18
[6] Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 137104]
[7] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]
[8] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci China Phys Mech. 55 1399
[9] Takaqi S, Zhang R, Takenaka M. 2013 Microelectron Eng. 109 389
[10] Ji F, Xu J P, Lai P T, Li C X, Liu J G 2011 IEEE Electr Device L 32 122
[11] Takaqi S, Zhang R, Iwasaki T, Taoka N, Takenaka M 2011 ECST 41 3
[12] Zhang R, Iwasaki T, Taoka N, Takenaka M, Takaqi S 2013 Microelectron Eng. 88 1533
[13] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[14] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 7228]
[15] Song J J, Yang Ch, Zhang H M, Hu H Y, Zhou Ch Y, Wang B 2012 Sci China Phys Mech. 55 2033
[16] Ye L X 1997 Monte Carlo simulation of the small-scale semiconductor devices (Beijing: Science Press) p280 (in Chinese) [叶修良1997小尺寸半导体器件的蒙特卡罗模拟(北京: 科学出版社) 第280页]
[17] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p367 (in Chinese) [刘恩科, 朱秉升, 罗晋生1994半导体物理学(北京: 国防工业出版社) 第367页]
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[1] Hassan A H A, Morris R J H, Mironov O A, Beanland R, Walker D, Huband S, Dobbie A, Myronov M, Leadley D R 2014 Appl. Phys. Lett. 104 132108
[2] Takaqi S, Takenaka M 2013 ECST 54 39
[3] Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 237102 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 237102]
[4] Lucovsky G, Kim J W, Nordlund D 2013 Microelectron Eng. 109 370
[5] Takenaka M, Zhang R, Takaqi S 2013 IEEE Int. Reliab. Phys. Symp. Proc. Monterey, CA, United States, April 14-18, 2013 p4C.11-4C.18
[6] Dian X Y, Yang Ch, Song J J, Zhang H M, Hao Y, Zheng R C 2012 Acta Phys. Sin. 61 137104 (in Chinese) [戴显英, 杨程, 宋建军, 张鹤鸣, 郝跃, 郑若川 2012 物理学报 61 137104]
[7] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese) [宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 物理学报 61 057304]
[8] Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Sci China Phys Mech. 55 1399
[9] Takaqi S, Zhang R, Takenaka M. 2013 Microelectron Eng. 109 389
[10] Ji F, Xu J P, Lai P T, Li C X, Liu J G 2011 IEEE Electr Device L 32 122
[11] Takaqi S, Zhang R, Iwasaki T, Taoka N, Takenaka M 2011 ECST 41 3
[12] Zhang R, Iwasaki T, Taoka N, Takenaka M, Takaqi S 2013 Microelectron Eng. 88 1533
[13] Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin. Phys. 16 3827
[14] Song J J, Zhang H M, Dian X Y, Hu H Y, Xuan R X 2008 Acta Phys. Sin. 57 7228 (in Chinese) [宋建军, 张鹤鸣, 戴显英, 胡辉勇, 宣荣喜 2008 物理学报 57 7228]
[15] Song J J, Yang Ch, Zhang H M, Hu H Y, Zhou Ch Y, Wang B 2012 Sci China Phys Mech. 55 2033
[16] Ye L X 1997 Monte Carlo simulation of the small-scale semiconductor devices (Beijing: Science Press) p280 (in Chinese) [叶修良1997小尺寸半导体器件的蒙特卡罗模拟(北京: 科学出版社) 第280页]
[17] Liu E K, Zhu B Sh, Luo J Sh 1994 Semiconductor Physics (Beijing: Defense Industry Press) p367 (in Chinese) [刘恩科, 朱秉升, 罗晋生1994半导体物理学(北京: 国防工业出版社) 第367页]
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