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通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si3N4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si3N4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围VG-sweep=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压VG+(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100 ups).
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关键词:
- 氮化镓高电子迁移率晶体管 /
- 低压化学气相沉积 /
- 原位氮化
Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.-
Keywords:
- GaN-based high electron mobility transistor /
- low pressure chemical vapor deposition /
- in-situ pre-deposition plasma nitridation
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[1] Yuan S, Duan B X, Yuan X N, Ma J C, Li C L, Cao Z, Guo H J, Yang Y T 2015 Acta Phys. Sin. 64 237302 (in Chinese)[袁嵩, 段宝兴, 袁小宁, 马建冲, 李春来, 曹震, 郭海军, 杨银堂 2015 物理学报 64 237302]
[2] Hua M, Liu C, Yang S, Liu S, Fu K, Dong Z, Cai Y, Zhang B, Chen K J 2015 IEEE Electron Dev. Lett. 36 448
[3] Yang S, Tang Z K, Wong K Y, Lin Y S, Liu C, Lu Y Y, Huang S, Chen K J 2013 IEEE Electron Dev. Lett. 34 1497
[4] Xin T, Lu Y J, Gu G D, Wang L, Dun S B, Song X B, Guo H Y, Yin J Y, Cai S J, Feng Z H 2015 J. Semicond. 36 074008
[5] Hsieh T E, Chang E Y, Song Y Z, Lin Y C, Wang H C, Liu S C, Salahuddin S, Hu C C 2014 IEEE Electron Dev. Lett. 35 732
[6] Choi W, Ryu H, Jeon N, Lee M, Cha H Y, Seo K S 2014 IEEE Electron Dev. Lett. 35 30
[7] Chakroun A, Maher H, Al Alam E, Souifi A, Aimez V, Ares R, Jaouad A 2014 IEEE Electron Dev. Lett. 35 318
[8] Liu S C, Chen B Y, Lin Y C, Hsieh T E, Wang H C, Chang E Y 2014 IEEE Electron Dev. Lett. 35 1001
[9] Zhang Z L, Qin S J, Fu K, Yu G H, Li W Y, Zhang X D, Sun S C, Song L, Li S M, Hao R H, Fan Y M, Sun Q, Pan G B, Cai Y, Zhang B S 2016 Appl. Phys. Express 9 084102
[10] Zhang Z L, Yu G H, Zhang X D, Deng X G, Li S M, Fan Y M, Sun S C, Song L, Tan S X, Wu D D, Li W Y, Huang W, Fu K, Cai Y, Sun Q, Zhang B S 2016 IEEE Trans. Electron Dev. 63 731
[11] Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, and Yang L A 2009 Chin. Phys. B 18 3014
[12] Edwards A P, Mittereder J A, Binari S C, Katzer D S, Storm D F, Roussos J A 2005 IEEE Electron Dev. Lett. 26 225
[13] Huang S, Jiang Q M, Yang S, Zhou C H, Chen K J 2012 IEEE Electron Dev. Lett. 33 516
[14] Reiner M, Lagger P, Prechtl G, Steinschifter P, et al. 2015 IEEE International Electron Devices Meeting Washington, Dec. 7-9 2015, p35.5.1
[15] Liu S, Yu G H, Fu K, Tan S X, Zhang Z L, Zeng C H, Hou K Y, Huang W, Cai Y, Zhang B S, Yuan J S 2014 Electron. Lett. 50 1322
[16] Kanamura M, Ohki T, Ozaki S, Nishimori M, Tomabechi S, Kotani J, Miyajima T, Nakamura N, Okamoto N, Kikkawa T 2013 Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on Kanazawa, May 26-30, 2013, pp411-414
[17] Xu Z, Wang J Y, Liu Y, Cai J B, Liu J Q, Wang M J, Yu M, Xie B, Wu W G, Ma X H, Zhang J C 2013 IEEE Electron Dev. Lett. 34 855
[18] Lanford W B, Tanaka T, Otoki Y, Adesida I 2005 Electron. Lett. 41 449
[19] Wu T L, Franco J, Marcon D, de Jaeger B, Bakeroot B, Stoffels S, van Hove M, Groeseneken G, Decoutere S 2016 IEEE Trans. Electron Dev. 63 1853
[20] Huang S, Yang S, Roberts J, Chen K J 2011 Jpn. J. Appl. Phys. 50 0202
[21] Polyakov A Y, Smirnov N B, Govorkov A V, Markov A V, Dabiran A M, Wowchak A M, Osinsky A V, Cui B, Chow P P, Pearton S J 2007 Appl. Phys. Lett. 91 232116
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