掺铌SrTiO<sub>3</sub>中的逆自旋霍尔效应

何冬梅; 彭斌; 张万里; 张文旭

doi:10.7498/aps.68.20190118

摘要

采用磁控溅射法在未掺杂和掺杂的SrTiO₃基片上沉积了NiFe薄膜, 通过翻转测试法分离出掺杂样品中的自旋整流电压和逆自旋霍尔电压. 研究结果表明: 在未掺杂的SrTiO₃基片中, 翻转前后测试的电压曲线基本一致, 为NiFe薄膜自旋整流效应产生的电压. 对于掺Nb浓度x为0.028, 0.05, 0.1, 0.15, 0.2的SrTiO₃基片, 分离出的逆自旋霍尔电压随掺杂浓度增加而减小, 在掺杂浓度为0.15和0.2的样品中没有探测到明显的逆自旋霍尔电压. 本文的结果表明, 在SrTiO₃中掺入强自旋轨道耦合的杂质, 通过掺杂浓度可以实现对SrTiO₃中逆自旋霍尔效应的调控, 这类可调控的自旋相关研究为自旋电子器件的研究和开发提供了更多的可能性, 具有很大的潜在应用价值.

关键词:

Abstract

The inverse spin Hall effect (ISHE), namely spin flows converted into charge currents due to spin orbital interaction, is investigated extensively in heavy metals, such as Pt, W, Au, etc. Recently, the effect was also found in Cu doped with Au. Their difference is that the spin Hall effect is from the intrinsic effect which is related to the topological character of the electronic bands, while the ISHE is mainly from the extrinsic spin dependent scattering by the impurities. The impurity scattering can give opportunities to tune the effect, for example by impurity concentration, which is impossible by the intrinsic mechanism. In this work, we extend the material to the doped oxides. NiFe films are deposited on undoped and doped SrTiO₃ substrates by magnetron sputtering, respectively. The spins are injected from the magnetic thin films by spin pumping through using a shorted microstrip transmission line fixture at different frequencies and room temperature. The spin rectification voltage and the inverse spin Hall voltage in the doped sample are separated by the inverting spin injection direction method, which is realized by flipping the samples. The results show that in the undoped SrTiO₃ substrate, the voltage curves before and after flipping the sample are basically the same, which is due to the voltage generated by the spin rectification effect of the NiFe film. For Nb-doped SrTiO₃ substrates with Nb concentration x = 0.028, 0.05, 0.1, 0.15 and 0.2, the inverse spin Hall voltage decreases with doping concentration increasing and is not detectable in sample with doping concentration of 0.15, nor with doping concentration of 0.2. The decrease of the ISHE effect may be due to the spin coherent length decreasing with the increase of the impurity concentration. The correlation between spin-charge conversion and transportation needs knowing in detail. Nevertheless, the results show that by doping strong spin-orbit coupling impurities into SrTiO₃, thus by changing the doping concentration, the inverse spin Hall effect in SrTiO₃ can be controlled. This tunable spin-charge conversion provides more possibilities for developing the spintronic devices and it will have great potential applications in the future.

Keywords:

作者及机构信息

电子科技大学电子科学与工程学院, 电子薄膜与集成器件国家重点实验室, 成都　611731

通信作者: 张文旭, xwzhang@uestc.edu.cn

基金项目: 国家重点研发计划(批准号: 2017YFB0406403)资助的课题.

Authors and contacts

State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China

Corresponding author: Zhang Wen-Xu, xwzhang@uestc.edu.cn

Funds: Project supported by National Key R&D Program of China (Grant No. 2017YFB0406403).

文章全文

参考文献

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施引文献

图 1 测试平台原理图

Fig. 1. Schematic diagram of the test platform

下载: 全尺寸图片幻灯片

图 2 NiFe/STO在不同频率下的测试曲线(a)及4.4 GHz时的翻转测试曲线(b)

Fig. 2. Voltages of NiFe/STO at different frequencies(a) and reversal test curves at 4.4 GHz before and after sample flip(b)

下载: 全尺寸图片幻灯片

图 3 NiFe/STO中铁磁共振线宽ΔH随频率f的变化曲线(a)和频率f随铁磁共振场H_r的变化曲线(b)

Fig. 3. Linewidth (ΔH) of ferromagnetic resonance varies with frequency f (a) and frequency f varies with resonance field(H_r) (b) in NiFe/STO

下载: 全尺寸图片幻灯片

图 4 NiFe/0.05Nb:STO体系3.4 GHz时的测试曲线, 插图为该体系3.4 GHz时的V_SRE和V_ISHE随外磁场的变化曲线

Fig. 4. Test curve at 3.4GHz in NiFe/0.05Nb:STO, the inset shows the variation of V_SRE and V_ISHE with external magnetic field at 3.4 GHz

下载: 全尺寸图片幻灯片

图 5 3.4 GHz时不同掺杂浓度的V_ISHE随外磁场的变化曲线

Fig. 5. Variation curve of V_ISHE with different doping concentrations with external magnetic field at 3.4 GHz

下载: 全尺寸图片幻灯片

图 6 各掺杂浓度样品频率f与线宽ΔH的拟合曲线, 插图为阻尼系数α与掺杂浓度的关系

Fig. 6. Fitting curves of frequency f and linewidth ΔH at different doping concentrations,the inset shows the relationship between the damping coefficient α and the doping concentration

下载: 全尺寸图片幻灯片

[1]	Valenzuela S O, Tinkham M 2006 Nature 442 176 Google Scholar
[2]	Kimura T, Otani Y, Sato T, Takahashi S, Maekawa S 2007 Phys. Rev. Lett. 98 156601 Google Scholar
[3]	Liu L, Pai C F, Li Y, Tseng H W, Ralph D C, Buhrman R A 2012 Science 336 555 Google Scholar
[4]	Kato Y K, Myers R C, Gossard A C, Awschalom D D 2004 Science 306 1910 Google Scholar
[5]	Kumar A, Bansal R, Chaudhary S, Muduli P K 2018 Phys. Rev. B 98 104403 Google Scholar
[6]	Nakayama H, Ando K, Harii K, Fujikawa Y, Kajiwara Y, Yoshino T, Saitoh E 2010 IEEE Trans. Magn. 46 2202 Google Scholar
[7]	Jungwirth T, Qian N, Macdonald A H 2002 Phys. Rev. Lett. 88 207208 Google Scholar
[8]	Guo G Y, Murakami S, Chen T W, Nagaosa N 2008 Phys. Rev. Lett. 100 096401 Google Scholar
[9]	Bottegoni F, Ferrari A, Cecchi S, Finazzi M, Ciccacci F, Isella G 2013 Appl. Phys. Lett. 10215241 1
[10]	Ramaswamy R, Wang Y, Elyasi M, Motapothula M, Venkatesan T, Qiu X, Yang H 2017 Phys. Rev. Appl. 8 024034 Google Scholar
[11]	Tse W K, Das S S 2006 Phys. Rev. Lett. 96 056601 Google Scholar
[12]	Fert A, Levy P M 2011 Phys. Rev. Lett. 106 157208 Google Scholar
[13]	Gradhand M, Fedorov D V, Zahn P, Mertig I 2010 Phys. Rev. Lett. 104 186403 Google Scholar
[14]	Choi W Y, Kim H J, Chang J, Han S H, Abbout A, Saidaoui H B M, Manchon A, Lee K J, Koo H C 2018 Nano Lett. 18 7998 Google Scholar
[15]	Zhang W, Peng B, Han F, Wang Q, Soh W T, Ong C K, Zhang W 2016 Appl. Phys. Lett. 108 102405 Google Scholar
[16]	Wang Q, Zhang W, Peng B, Zhang W 2017 Aip. Adv. 7 125218 Google Scholar
[17]	Mosendz O, Vlaminck V, Pearson J E, Fradin F Y, Bauer G E W, Bader S D, Hoffmann A 2010 Phys. Rev. B 82 214403 Google Scholar
[18]	Ando K, Takahashi S, Ieda J, Kajiwara Y, Saitoh E 2011 J. Appl. Phys. 109 103913 Google Scholar
[19]	Deorani P, Yang H 2013 Appl. Phys. Lett. 103 232408 Google Scholar

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掺铌SrTiO₃中的逆自旋霍尔效应