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人为操控电子的内禀自由度是现代电子器件的核心和关键. 如今电子的电荷和自旋自由度已经被广泛地应用于逻辑计算与信息存储. 以二维过渡金属硫属化合物为代表的二维原子层材料由于其具有独特的谷自由度和优异的物理性质, 成为了新型谷电子学器件研究的优选材料体系. 本文介绍了能谷的基本概念、谷材料的基本物理性质、谷效应的调控和谷电子学器件的研究进展, 并对谷电子学材料和器件的研究进行了总结与展望.
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关键词:
- 二维过渡金属硫属化合物 /
- 谷电子学
Artificial manipulation of electronic degrees of freedom is the key point to realize modern electronic devices. Both charge and spin of electron have been widely studied and applied to logic circuits and information storage devices. Valley, the unique degree of freedom of crystal electrons, has also attracted great attention of the researchers in the past decade. The valleytronics progress benefits from the tremendous improvements of the two-dimensional atomic layer material growth technologies and in-depth explorations of valley properties. Valleytronic materials, represented by two-dimensional transition metal dichalcogenides, have become an excellent platform for the research and design of new electronic devices due to their special optical responses and distinctive electronic transport properties. The valley devices have the advantages of fast operation, low energy consumption, less information loss, high integration and long transmission distance. In this review, we first introduce the basic concepts and properties of the energy valley, such as the valley Hall effect and the valley circular dichroism. Second, we describe the crystal structures and energy band diagrams of the two-dimensional transition metal dichalcogenides. Third, the progress in artificial manipulation of the valley effects is summarized. Some approaches which can break the inversion symmetry and therefore induce the valley degree of freedom are introduced. Fourth, we discuss the methods of realizing valley polarization. Fifth, the developments of valleytronic devices in recent years are reviewed. Finally, a summary and an outlook are given. [1] Urbaszek B, Marie X 2015 Nature Phys. 11 94Google Scholar
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图 4 单层MoS2在83 K下的圆偏振极化PL谱和PL谱的圆偏振极化程度. 红色和蓝色曲线分别对应于发光光谱中
${\sigma ^ + }$ 和${\sigma ^ - }$ 极化强度, 黑色曲线是净极化的大小[28]Fig. 4. Circularly polarized micro-PL of monolayer MoS2 at 83 K, along with the degree of circular polarization of the PL spectra. The red and blue curves correspond to the intensities of
${\sigma ^ + }$ and${\sigma ^ - }$ polarizations, respectively, in the luminescence spectrum. The black curve is the net degree of polarization[28].图 5 (a)体MoS2, (b)四层MoS2, (c)双层MoS2和(d)单层MoS2的能带结构. 实心箭头表示最低能量跃迁. 体和多层MoS2具有间接带隙特性. 对于单层MoS2, 它变为直接带隙半导体[42]
Fig. 5. Calculated band structures of (a) bulk MoS2, (b) quadrilayer MoS2, (c) bilayer MoS2, and (d) monolayer MoS2. The solid arrows indicate the lowest energy transitions. Bulk MoS2 is characterized by an indirect bandgap. For monolayer MoS2, it becomes a direct bandgap semiconductor[42].
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