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电致红外发射率动态调控器件研究进展

程柏璋 祝玉林 伊洋 陶鑫 贾岩 刘东青 程海峰

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电致红外发射率动态调控器件研究进展

程柏璋, 祝玉林, 伊洋, 陶鑫, 贾岩, 刘东青, 程海峰

Research progress of infrared electrochromic devices

Cheng Bai-Zhang, Zhu Yu-Lin, Yi Yang, Tao Xin, Jia Yan, Liu Dong-Qing, Cheng Hai-Feng
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  • 电致红外发射率动态调控器件是一类在电场激励下红外发射率能发生可逆动态变化的器件, 该类器件在自适应红外伪装、航天器智能热控等领域具有重要应用价值, 已成为红外辐射调控领域的研究前沿和热点. 本文概述了基于金属氧化物、导电聚合物、石墨烯、金属等材料的电致红外发射率动态调控器件的工作原理、研究进展, 并分析了电致红外发射率动态调控器件的发展趋势.
    Infrared electrochromic device is a kind of device whose infrared emissivity can change reversibly under electric field excitation. This kind of device has important applications in the fields of adaptive infrared camouflage and intelligent thermal control, and has become a research frontier and hot spot in the field of infrared radiation control. In this paper, the working principle, research status and progress of infrared electrochromic devices based on metal oxides, conductive polymers, graphene and metals are summarized, and the development trend of infrared electrochromic device is analyzed.
      通信作者: 刘东青, liudongqing07@nudt.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 52073303)资助的课题
      Corresponding author: Liu Dong-Qing, liudongqing07@nudt.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 52073303)
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  • 图 1  不同类型的WO3电致发射率动态调控器件 (a)多孔电极式[13]; (b)半导体电极式[19]; (c)金属网格电极式[18]; (d)超材料电极式[27]; (e) ITO电极式[29]

    Fig. 1.  Several WO3 infrared electrochromic devices: (a) Device with porous electrode[13]; (b) device with semiconductor electrode[19]; (c) device with metal grid electrode[18]; (d) device with metamaterials electrode[27]; (e) device with ITO electrode[29].

    图 2  (a) LTO器件结构及工作原理示意图[32]; (b) LTO相变过程示意图[32]; (c) 器件在不同状态下的反射率曲线[32]

    Fig. 2.  (a) Schematic diagram of structure and working principle of LTO device[32]; (b) phase transition process of LTO[32]; (c) the reflectivity curves of the LTO device in different states[32].

    图 3  (a) VO2器件结构示意图[34]; (b)器件高发射率态的红外热图[34]; (c)器件低发射率态的红外热图[34]

    Fig. 3.  (a) Schematic diagram of structure of VO2 device[34]; (b) thermal image of VO2 device in high emissivity state[34]; (c) thermal image of VO2 device in low emissivity state[34].

    图 4  (a)金属网格电极器件结构[38]; (b)多孔电极器件结构[11]

    Fig. 4.  (a) The structural diagram of device with metal grid electrode[38]; (b) the structural diagram of the device with porous electrode[11].

    图 5  (a)透射式噻吩器件结构及红外透过性调控效果[46]; (b)横向式噻吩器件结构及红外热图[47]

    Fig. 5.  (a) The structure and regulation effect of infrared transmittance of transmission thiophene device[46]; (b) structure and infrared discoloration image of transverse discoloration thiophene device[47].

    图 6  (a)石墨烯器件结构及红外热图[56]; (b)织物石墨烯器件外观及反射率光谱[57]

    Fig. 6.  (a) Structure and thermal map of graphene device[56]; (b) appearance and reflectivity curves of fabric graphene device[57].

    图 7  (a)多壁碳纳米管器件结构示意图[61]; (b)多壁碳纳米管微观结构示意图[61]; (c)柔性器件的红外伪装效果[61]; (d)不同掺杂程度器件的红外热图[61]

    Fig. 7.  (a) Structure diagram of multi-walled CNT device[61]; (b) schematic diagram of microstructure of multi-walled CNT[61]; (c) infrared camouflage effect of flexible multi-walled CNT device[61]; (d) infrared thermal maps of multi-walled CNT devices in different states[61].

    图 8  (a)超表面石墨烯器件表面微元结构示意图[65]; (b)金纳米微元阵列[65]; (c)不同栅极电压下的器件反射率光谱[65]

    Fig. 8.  (a) Chematic diagram of surface microelement structure of metasurface graphene device[65]; (b) gold electrode array[65]; (c) IR reflectance curves of the device for different gate voltages[65].

    图 9  (a)基于石墨烯电极的器件的结构及红外热图[70]; (b) 基于Pt电极刚性器件的工作过程及不同通电时间下的反射率曲线[71]; (c)基于Pt电极柔性器件的红外伪装效果及不同通电时间下柔性器件的反射率曲线[71]

    Fig. 9.  (a) Schematic diagram of device structure and thermal maps based on graphene electrode[70]; (b) diagram of working process and the reflectivity curves of rigid device based on Pt electrode at different times of energization[71]; (c) infrared camouflage effect and reflectivity curves of flexible device at different times of energization[71].

    表 1  几类红外发射率动态调控器件的主要性能最优值[17,27,32,34,39,45,56,61,71]

    Table 1.  The optimum values of main performance of several kinds of IR emissivity adjustable devices[17,27,32,34,39,45,56,61,71].

    主要性能金属氧化物类导电聚合物类石墨烯类金属类
    调控量0.800 (7—12 μm)0.553 (8—14 μm)0.550 (7.5—13 μm)0.770 (8—14 μm)
    响应时间/s1.61.01$ \times $10–910
    循环寿命/次1000009003500400
    多波段兼容性红外可见光-红外可见光-红外-微波可见光-红外
    工艺复杂程度较复杂简单复杂简单
    制备成本较高较低较高
    下载: 导出CSV
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出版历程
  • 收稿日期:  2021-01-28
  • 修回日期:  2021-05-17
  • 上网日期:  2021-10-11
  • 刊出日期:  2021-10-20

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