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Recent studies have found that all three materials within the vanadium-based Kagome superconductors (AV3Sb5, A = K, Cs, Rb) exhibit time-reversal symmetry-breaking behaviors in the superconducting states. Among the three, the Josephson junctions structured Nb/K1–xV3Sb5/Nb and RbV3Sb5 show magnetic hysteresis below the superconducting transition temperature. In CsV3Sb5, there exists a zero-field superconducting diode effect, meaning the magnitude of the positive and negative superconducting critical current are different. We first discuss the similarities and differences among the three above-mentioned experiments. Then, we discuss the possible mechanisms responsible for the unconventional superconducting transport phenomena: such as chiral superconducting order parameter (d+id or p+ip), and chiral pair density waves arising from the coupling of the charge density waves and conventional superconducting states.
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Keywords:
- Kagome superconductor /
- symmetry-breaking /
- superconducting diode
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表 1 不同钒基笼目超导体的超导输运性质比较
Table 1. Comparison of superconducting transport properties of different vanadium-based Kagome superconductors
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[1] Landau L D 1965 Collected Papers of LD Landau (Oxford, New York: Pergamon Press
[2] Du Z, Lu H Z, Xie X 2021 Nat. Rev. Phys. 3 744Google Scholar
[3] Jiang K, Wu T, Yin J X, Wang Z, Hasan M Z, Wilson S D, Chen X, Hu J 2023 Nat. Sci. Rev. 10 nwac199Google Scholar
[4] Neupert T, Denner M M, Yin J X, Thomale R, Hasan M Z 2022 Nat. Phys. 18 137Google Scholar
[5] Wang Y J, Yang S Y, Sivakumar P K, Ortiz B R, Teicher S M, Wu H, Srivastava A K, Garg C, Liu D, Parkin S S, Toberer E S, Mcqueen T, Wilson S D, Ali M N 2023 Sci. Adv. 9 eadg7269Google Scholar
[6] Keizer R S, Gönnenwein S T, Klapwijk T M, Miao G, Xiao G, Gupta A 2006 Nature 439 825Google Scholar
[7] Le T, Pan Z, Xu Z, Liu J, Wang J, Lou Z, Yang X, Wang Z, Yao Y, Wu C 2024 Nature 630 64Google Scholar
[8] Nadeem M, Fuhrer M S, Wang X 2023 Nat. Rev. Phys. 5 558Google Scholar
[9] Little W, Parks R 1962 Phys. Rev. Lett. 9 9Google Scholar
[10] Wang W, Kim S, Liu M, Cevallos F, Cava R, Ong N 2020 Science 368 534Google Scholar
[11] Wang S, Feng X, Fang J Z, et al. 2024 arXiv: 2405.12592 [cond-mat.str-el]
[12] Ran S, Liu I L, Eo Y S, Campbell D J, Neves P M, Fuhrman W T, Saha S R, Eckberg C, Kim H, Graf D 2019 Nat. Phys. 15 1250Google Scholar
[13] Zhou H, Holleis L, Saito Y, Cohen L, Huynh W, Patterson C L, Yang F, Taniguchi T, Watanabe K, Young A F 2022 Science 375 774Google Scholar
[14] Wei X, Tian C, Cui H, Li Y, Liu S, Feng Y, Cui J, Song Y, Wang Z, Chen J H 2023 2D Materials 10 015010Google Scholar
[15] Ortiz B R, Teicher S M, Hu Y, Zuo J L, Sarte P M, Schueller E C, Abeykoon A M, Krogstad M J, Rosenkranz S, Osborn R 2020 Phys. Rev. Lett. 125 247002Google Scholar
[16] Ortiz B R, Sarte P M, Kenney E M, Graf M J, Teicher S M, Seshadri R, Wilson S D 2021 Phys. Rev. Mater. 5 034801Google Scholar
[17] Wang N, Chen K, Yin Q, Ma Y, Pan B, Yang X, Ji X, Wu S, Shan P, Xu S 2021 Phys. Rev. Res. 3 043018Google Scholar
[18] Mine A, Zhong Y, Liu J, Suzuki T, Najafzadeh S, Uchiyama T, Yin J X, Wu X, Shi X, Wang Z, Yao Y, Okazaki K 2024 arXiv: 2404.18472 [cond-mat.supr-con]
[19] Ni S, Ma S, Zhang Y, Yuan J, Yang H, Lu Z, Wang N, Sun J, Zhao Z, Li D 2021 Chin. Phys. Lett. 38 057403Google Scholar
[20] Wei X, Tian C, Cui H, Zhai Y, Li Y, Liu S, Song Y, Feng Y, Huang M, Wang Z 2024 Nat. Commun. 15 5038Google Scholar
[21] Feng X, Jiang K, Wang Z, Hu J 2021 Sci. Bull. 66 1384Google Scholar
[22] Denner M M, Thomale R, Neupert T 2021 Phys. Rev. Lett. 127 217601Google Scholar
[23] Park T, Ye M, Balents L 2021 Phys. Rev. B 104 035142Google Scholar
[24] Chen H, Yang H, Hu B, Zhao Z, Yuan J, Xing Y, Qian G, Huang Z, Li G, Ye Y 2021 Nature 599 222Google Scholar
[25] Yu S L, Li J X 2012 Phys. Rev. B 85 144402Google Scholar
[26] Zhong Y, Liu J, Wu X, et al. 2023 Nature 617 488Google Scholar
[27] Ge J, Wang P, Xing Y, Yin Q, Wang A, Shen J, Lei H, Wang Z, Wang J 2024 Phys. Rev. X 14 021025Google Scholar
[28] Wollman D, Van Harlingen D, Lee W, Ginsberg D, Leggett A 1993 Phys. Rev. Lett. 71 2134Google Scholar
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