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Bi2O3:BaF2 and BiF3:BaF2 crystals were prepared by TGT (temperature gradient method). Near-infrared broadband luminescence was observed in as-grown Bi2O3:BaF2 crystal. The emission band peaks at 961 nm in the range of 850—1250 nm,with FWHM about 202 nm. The luminescence of Bi2+ and Bi3+ ions in the visible region was observed in BiF3:BaF2 crystal, but there was no near-infrared emission. Then the BiF3: BaF2 crystal was exposed to γ-rays in order to reduce valence states of Bi ions. Near-infrared broadband luminescence was observed in γ-irradiated BiF3:BaF2 crystal. The emission band peaks at 1135 nm in the range of 850—1500 nm,with FWHM about 192 nm. The mechanisms of near-infrared luminescence in Bi2O3:BaF2 crystals and γ-irradiated BiF3:BaF2 crystals were discussed.
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Keywords:
- near-infrared luminescence /
- bismuth /
- BaF2 crystal /
- γ-irradiation
[1] [1]Flood F A 2000 Proceedings of Optical Fiber Communications Conference Baltimore, 5—10 March 2000, WG1-2
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[3] [3]Mori A, Ohishi Y, Sudo S 1997 Electron. Lett. 33 863
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[8] [8]Fujimoto Y,Nakatsuka M 2001 Appl. Phys. Lett. 40 L279
[9] [9]Fujimoto Y,Nakatsuka M 2003 Appl. Phys. Lett. 82 3325
[10] ]Okhrimchuk A G, Butvina L N, Dianov E M, Lichkova N V, Zagorodnev V N, Boldvrev K N 2008 Opt. Lett. 33 2182
[11] ]Ruan J, Su L B, Qiu J R, Chen D P, Xu J 2009 Opt. Exp. 17 5163
[12] ]Su L B, Dong Y J, Yang W Q, Zhou G Q, Zhou S M, Zhao G J, Xu J 2004 J. Synth. Cryst. 33 88 (in Chinese) [苏良碧、董永军、杨卫桥、周国清、周圣明、赵广军、徐军 2004 人工晶体学报 33 88]
[13] ]Peng M Y, Qiu J R, Chen D P, Meng X G, Yang I Y, Jiang X W, Zhu C S 2008 Opt. Lett. 29 1998
[14] ]Blasse G, Bril A 1968 J. Chem. Phys. 48 217
[15] ]Srivastava A 1998 J. Lumin. 78 239
[16] ]Bao J X, Zhou S F, Feng G F, Wang X, Lin G, Qiu J R 2007 J. Lumin. 5 699 (in Chinese) [鲍家兴、周时凤、冯高峰、王玺、林耿、邱建荣 2007 发光学报 5 699]
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[1] [1]Flood F A 2000 Proceedings of Optical Fiber Communications Conference Baltimore, 5—10 March 2000, WG1-2
[2] [2]Federighi M, Pasquale F D 1995 IEEE Photon. Technol. Lett. 7 303
[3] [3]Mori A, Ohishi Y, Sudo S 1997 Electron. Lett. 33 863
[4] [4]Yang J H, Dai S X, Zhou Y F, Wen L, Hu L L, Jiang Z H 2003 J . Appl. Phys. 93 977
[5] [5]Yang J H, Dai S X, Wen L, Liu Z P, Hu L L, Jiang Z H 2003 Acta Phys. Sin. 52 508 (in Chinese) [杨建虎、戴世勋、温磊、柳祝平、胡丽丽、姜中宏 2003 物理学报 52 508]
[6] [6]Chen B Y, Lin Y H, Chen D D, Jiang Z H 2004 Acta Phys. Sin. 54 2374 (in Chinese) [陈炳炎、刘粤惠、陈东丹、姜中宏 2004 物理学报 54 2374]
[7] [7]Yamada M, Ono H, Ohishi Y 1998 Electron. Lett. 34 1490
[8] [8]Fujimoto Y,Nakatsuka M 2001 Appl. Phys. Lett. 40 L279
[9] [9]Fujimoto Y,Nakatsuka M 2003 Appl. Phys. Lett. 82 3325
[10] ]Okhrimchuk A G, Butvina L N, Dianov E M, Lichkova N V, Zagorodnev V N, Boldvrev K N 2008 Opt. Lett. 33 2182
[11] ]Ruan J, Su L B, Qiu J R, Chen D P, Xu J 2009 Opt. Exp. 17 5163
[12] ]Su L B, Dong Y J, Yang W Q, Zhou G Q, Zhou S M, Zhao G J, Xu J 2004 J. Synth. Cryst. 33 88 (in Chinese) [苏良碧、董永军、杨卫桥、周国清、周圣明、赵广军、徐军 2004 人工晶体学报 33 88]
[13] ]Peng M Y, Qiu J R, Chen D P, Meng X G, Yang I Y, Jiang X W, Zhu C S 2008 Opt. Lett. 29 1998
[14] ]Blasse G, Bril A 1968 J. Chem. Phys. 48 217
[15] ]Srivastava A 1998 J. Lumin. 78 239
[16] ]Bao J X, Zhou S F, Feng G F, Wang X, Lin G, Qiu J R 2007 J. Lumin. 5 699 (in Chinese) [鲍家兴、周时凤、冯高峰、王玺、林耿、邱建荣 2007 发光学报 5 699]
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