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A N2-H2 capacitively coupled rf discharge has potential applications in etching of organic low dielectric constant (low-k) material for microelectronics technology. In this paper, we investigate the characteristic and electrical asymmetry effect (EAE) on the N2-H2 capacitively coupled plasma used for low-k material etching by particle-in-cell/Monte Carlo (PIC/MC) model, in which the two frequency sources of 13.56 MHz and 27.12 MHz are applied separately to the two electrodes in geometrically in symmetry. It is found that the plasma density profiles, the ion flux density profiles and the energy distribution of ion bombarding electrodes can be changed by adjusting the phase angle θ between the two harmonics. When the phase angle θ is 0°, the density of primary ion (H3+) near low frequencie electrode (LFE) (wafer) is smallest, whereas flux and average energy of ion (H+, H3+, H2+) bombarding LFE are biggest; if the phase angle θ is tuned from 0° to 90°, the dc self-bias increases almost linearly from -103 V to 106 V, ion flux bombarding the LFE decreases by ±18%, the maximum of the ion bombarding energy at the LFE decreases by a factor of 2.5. For the N2-H2 capacitively coupled rf discharge, for the case of two frequencies (13.56 MHz/27.12 MHz) applied separately to the two electrodes, can realize separate control of ion energy and flux via the EAE, and is generally in qualitative agreement with experimental and modeling investigation on the Ar and O2 plasma for a dual-frequency voltage source of 13.56 MHz and 27.12 MHz is applied to the powered electrode. This work supplies a references basis for experimental research and technology that the EAE on the H2-N2 plasmas is used for organic low-k material etching process.
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[2] Nagai H, Hiramatsu M, Hori M, Goto T 2003 Jpn. J. Appl. Phys. 42 L212
[3] van Laer K, Tinck S, Samara V, de Marneffe J F, Bogaerts A 2013 Plasma Sources Sci. Technol. 22 025011
[4] Liu X M, Song Y H, Wang Y N 2011 Chin. Phys. B 20 065205
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[17] Schungel E, Zhang Q Z, Iwashita S, Schulze J, Hou L J, Wang Y N, Czarnetzki U 2011 J. Phys. D: Appl. Phys. 44 285205
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[20] Ishihara K, Shimada T, Yagisawa T, Makabe T 2006 Plasma Phys. Control. Fusion 48 B99
[21] Zhang L Z, Yao F B, Zhao G M, Hao Y Y, Sun Q 2014 Plasma Sci. Technol. 16 203
[22] Uchida S, Takashima S, Hori M, Fukasawa M, Ohshima K, Nagahata K, Tatsumi T 2008 J. Appl. Phys. 103 073303
[23] Nanbu K 2000 IEEE Trans. Plasma Sci. 28 917
[24] Zhang L Z, Meng X L, Zhang S, Gao S X, Zhao G M 2013 Acta Phys. Sin. 62 075201(in Chinese)[张连珠, 孟秀兰, 张素, 高书侠, 赵国明 2013 物理学报 62 075201]
[25] Wakayama G, Nanbu K 2003 IEEE Trans. Plasma Sci. 31 638
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[27] Itikawa Y 2006 J. Phys. Chem. Ref. Data. 35 31
[28] Bogaerts A, Gijbels R 2002 Spectrochim. Acta B 57 1071
[29] Itikawa Y, Yoon J S, Song M Y, Han J M, Hwang S H 2008 J. Phys. Chem. Ref. Data. 37 913
[30] Phelps A V 1991 J. Phys. Chem. Ref. Data. 20 557
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[32] Phelps A V 1990 J. Phys. Chem. Ref. Data. 19 653
[33] Phelps A V 2009 Phys. Rev. E 79 066401
[34] Simko T, Martisovits V 1997 Phys. Rev. E 56 5908
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[1] Chen S T, Chen G S, Yang T J, Chang T C, Yang W H 2003 Electrochem. Solid-State Lett. 6 4
[2] Nagai H, Hiramatsu M, Hori M, Goto T 2003 Jpn. J. Appl. Phys. 42 L212
[3] van Laer K, Tinck S, Samara V, de Marneffe J F, Bogaerts A 2013 Plasma Sources Sci. Technol. 22 025011
[4] Liu X M, Song Y H, Wang Y N 2011 Chin. Phys. B 20 065205
[5] Jiang X Z, Liu Y X, Bi Z H, Lu W Q, Wang Y N 2012 Acta Phys. Sin. 61 015204(in Chinese)[蒋相站, 刘永新, 毕振华, 陆文琪, 王友年 2012 物理学报 61 015204]
[6] Lee J K, Manuilenko O V, Babaeva N Y, Kim H C, Shon J W 2005 Plasma Sources Sci. Technol. 14 89
[7] Kawamura E, Lieberman M A, Lichtenberg A J 2006 Phys. Plasmas 13 053506
[8] Heil B G, Czarnetzki U, Brinkmann R P, Mussenbrock T 2008 J. Phys. D: Appl. Phys. 41 165202
[9] Donkó Z, Schulze J, Heil B G, Czarnetzki U 2009 J. Phys. D: Appl. Phys. 42 025205
[10] Czarnetzki U, Schulze J, Schunge E, Donko Z 2011 Plasma Sources Sci. Technol. 20 024010
[11] Schulze J, Schngel E, Czarnetzki U, Donkó Z 2009 J. Appl. Phys. 106 063307
[12] Schulze J, Donko Z, Luggenholscher D, Czarnetzki U 2009 Plasma Sources Sci. Technol. 18 034011
[13] Schulze J, Derzsi A, Donko Z 2011 Plasma Sources Sci. Technol. 20 045008
[14] Schulze J, Schungel E, Donko Z, Czarnetzki U 2010 Plasma Sources Sci. Technol. 19 045028
[15] Schungel E, Eremin D, Schulze J, Mussenbrock T, Czarnetzki U 2012 J. Appl. Phys. 112 053302
[16] Zhang Q Z, Jiang W, Hou L J, Wang Y N 2011 J. Appl. Phys. 109 013308
[17] Schungel E, Zhang Q Z, Iwashita S, Schulze J, Hou L J, Wang Y N, Czarnetzki U 2011 J. Phys. D: Appl. Phys. 44 285205
[18] Zhang Q Z, Zhao S X, Jiang W, Wang Y N 2012 J. Phys. D: Appl. Phys. 45 305203
[19] Shon C H, Makabe T 2004 IEEE Trans. Plasma Sci. 32 390
[20] Ishihara K, Shimada T, Yagisawa T, Makabe T 2006 Plasma Phys. Control. Fusion 48 B99
[21] Zhang L Z, Yao F B, Zhao G M, Hao Y Y, Sun Q 2014 Plasma Sci. Technol. 16 203
[22] Uchida S, Takashima S, Hori M, Fukasawa M, Ohshima K, Nagahata K, Tatsumi T 2008 J. Appl. Phys. 103 073303
[23] Nanbu K 2000 IEEE Trans. Plasma Sci. 28 917
[24] Zhang L Z, Meng X L, Zhang S, Gao S X, Zhao G M 2013 Acta Phys. Sin. 62 075201(in Chinese)[张连珠, 孟秀兰, 张素, 高书侠, 赵国明 2013 物理学报 62 075201]
[25] Wakayama G, Nanbu K 2003 IEEE Trans. Plasma Sci. 31 638
[26] Itikawa Y, Hayashi M, Ichimura A 1986 J. Phys. Chem. Ref. Data. 15 985
[27] Itikawa Y 2006 J. Phys. Chem. Ref. Data. 35 31
[28] Bogaerts A, Gijbels R 2002 Spectrochim. Acta B 57 1071
[29] Itikawa Y, Yoon J S, Song M Y, Han J M, Hwang S H 2008 J. Phys. Chem. Ref. Data. 37 913
[30] Phelps A V 1991 J. Phys. Chem. Ref. Data. 20 557
[31] Tosi P, Dmitrijev O, Bassi B 1992 J. Chem. Phys. 97 3333
[32] Phelps A V 1990 J. Phys. Chem. Ref. Data. 19 653
[33] Phelps A V 2009 Phys. Rev. E 79 066401
[34] Simko T, Martisovits V 1997 Phys. Rev. E 56 5908
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