Memristive and magnetoresistance effects of SnSe<sub>2</sub>

He Bin; He Xiong; Liu Guo-Qiang; Zhu Can; Wang Jia-Fu; Sun Zhi-Gang

doi:10.7498/aps.69.20200160

Abstract

Memristor and magnetoresistance (MR) are widely used in the field of information storage. In recent years, SnSe₂, as an information storage material with both memristor and MR effects, has received a lot of attention of the researchers. It is of great significance to further explore its electrical transport mechanism. In this paper, the high-purity bulk SnSe₂ samples are prepared by melting method together with spark plasma sintering. The V-I curves are measured under different temperatures and magnetic fields. The memristive and MR effect of SnSe₂ are systematically investigated. After the memristive characteristics are excluded from interfacial junction effect, phase transition and conductive wire channels, the memristive effect at different temperatures is attributed to the space charge limiting current effect under defect control. Under low electric field conditions, the internal carrier concentration of material is much higher than the injected carrier concentration and the V-I curve obeys ohmic conduction. When the voltage increases to the switching voltage V_on, the internal defects of the material are filled with the injected carriers as the transport time of the injected carrier is less than the dielectric relaxation time, and the V-I curves deviate from ohmic conductivity. When the voltage reaches the transition voltage V_TFL, the injected carrier increases exponentially, and the V-I curve presents negative differential phenomenon. Finally, the space charge inside the material will limit the further injection of external carriers, and the V-I curve follows the Child law. As the temperature decreases to 10 K, the memristive phenomenon weakens because a large number of defects for accepting the injected carriers are reduced due to the decrease of impurity ionization at low temperatures. At the same time, the sample exhibits a large negative MR at 10 K and 100 K. When impurity scattering predominates, the electrons will be subjected to multiple scattering by the impurities, resulting in localization of carriers. The negative MR effect is related to the inhibition of the carrier localization by the magnetic field. In our work, a large negative MR of about –37% at 0.6 T and 10 K are obtained, which is likely to originate from the disordered distribution of Se vacancy in the material. With the increase of temperature, the scattering mechanism gradually evolves from the impurity scattering into the lattice scattering, and the negative MR effect gradually develops into the positive MR effect.

Keywords:

Authors and contacts

1.
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
2.
School of Science, Wuhan University of Technology, Wuhan 430070, China

Corresponding author: Sun Zhi-Gang, sun_zg@whut.edu.cn

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References

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Cited By

图 1 块体SnSe₂的制备流程

Figure 1. Preparation processes of the bulk SnSe₂.

DownLoad: Full-Size Img PowerPoint

图 2 (a) SnSe₂粉体XRD, 插图为样品的晶体结构; (b)和(c) 样品断面FESEM图; (d) EDS能谱图; (e) EDS面扫Se分布图; (f) EDS面扫Sn分布图

Figure 2. (a) XRD patterns of SnSe₂, the inset is the crystal structure of the SnSe₂; (b) and (c) FESEM images of the fresh fracture surface of SnSe₂ after SPS synthesis; (d) EDS spectrum of SnSe₂; (e) the Se elemental map and (f) the Sn elemental map.

DownLoad: Full-Size Img PowerPoint

图 3 (a) 10−300 K下的ρ-T曲线; (b) 材料的载流子浓度与迁移率在10−300 K下的变化曲线

Figure 3. Temperature dependence (10−300 K) of the resistivity (a) and carrier concentration and mobility (b).

DownLoad: Full-Size Img PowerPoint

图 4 (a) 300 K下器件在–100 mA → 0 → 100 mA → 0 → –100 mA循环3次的V-I曲线, 插图为器件模型图; (b) 10 K下器件在–100 mA → 0 → 100 mA → 0 → –100 mA循环3次的V-I曲线

Figure 4. (a) V-I characteristic curves of SnSe₂ with current sweep as –100 mA → 0 → 100 mA → 0 → –100 mA for 3 times at 300 K, the inset shows the schematic of the device; (b) V-I characteristic curves of SnSe₂ with current sweep as –100 mA → 0 → 100 mA → 0 → –100 mA for 3 times at 10 K.

DownLoad: Full-Size Img PowerPoint

图 5 (a) 在环境温度285 K下(0 mA → 100 mA → 0 mA)的V-I循环图, 插图为器件未控温直接与空气进行热交换的红外测试示意图; (b)样品在(a)中A, B, C点时的温度分布; (c) SnSe₂的DSC曲线

Figure 5. (a) V-I characteristic curves of SnSe₂ in current sweep as 0 mA → 100 mA → 0 mA at ambient temperature 285 K, the inset shows the ultrared detection diagram of the device directly exchanging heat with air; (b) temperature distribution maps of the sample at temperature points A, B and C in (a); (c) the DSC curves of SnSe₂.

DownLoad: Full-Size Img PowerPoint

图 6 在300 K负向偏压下(a)和正向偏压下(b)的lgV-lgI图; 在10 K负向偏压下(c)和正向偏压下(d)的lgV-lgI图

Figure 6. lgV-lgI curves in negative bias region (a) and positive bias region (b) at 300 K, respectively; lgV-lgI curves in in negative bias region (c) and positive bias region (d) at 10 K, respectively.

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图 7 不同磁场下的V-I曲线　(a) 300 K; (c) 200 K; (e) 100 K; (g) 10 K; 不同磁场下lgV-lgI曲线 (b) 300 K; (d) 200 K; (f) 100 K; (h) 10 K; 图(b)和图(d)中插图为曲线的局部放大图

Figure 7. V-I characteristic curves under different magnetic fields at 300 K (a), 200 K (c), 100 K (e) and 10 K (g), respectively; lgV-lgI characteristic curves under different magnetic fields at 300 K (b), 200 K (d), 100 K (f) and 10 K (h), respectively. The insets in (b) and (d) show the magnified parts of curves.

DownLoad: Full-Size Img PowerPoint

图 8 (a)晶格散射主导下的电子输运过程; (b) 磁场对晶格散射主导的电子运动过程影响; (c) 杂质散射主导的电子局域化行为; (d) 磁场对杂质散射时的电子局域化抑制行为

Figure 8. (a) Electron motion process dominated by lattice scattering; (b) influence of magnetic field on the electron motion process dominated by lattice scattering; (c) electron localization process dominated by impurity scattering; (d) influence of magnetic field on the electron localization process dominated by impurity scattering.

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图 9 (a) 100 K不同区域下MR-B曲线; (b) 10 K不同区域下MR-B曲线

Figure 9. (a) MR-B curves in different regions at 100 K; (b) MR-B curves in different regions at 10 K.

DownLoad: Full-Size Img PowerPoint

[1]	Chua L 1971 IEEE Trans. Circuit Theory 18 507 Google Scholar
[2]	Sawa A 2008 Mater. Today 11 28
[3]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632 Google Scholar
[4]	Segui Y, Ai B, Carchano H 1976 J. Appl. Phys. 47 140 Google Scholar
[5]	Scott J C, Bozano L D 2007 Adv. Mater. 19 1452 Google Scholar
[6]	缪向水, 李祎, 孙华军, 薛堪豪 2018 忆阻器导论 (北京: 科学出版社) 第14−20页 Miu X S, Li W, Sun H J, Xue K H 2018 Introduction to memristor (Beijing: Science Press) pp14−20 (in Chinese)
[7]	刘东青, 程海峰, 朱玄, 王楠楠, 张朝阳 2014 物理学报 63 187301 Google Scholar Liu D Q, Cheng H F, Zhu X, Wang N N, Zhang C Y 2014 Acta Phys. Sin. 63 187301 Google Scholar
[8]	Windeln J, Bram C, Eckes H L, Hammel D, Huth J, Marien J, Röhl H, Schug C, Wahl M, Wienss A 2001 Appl. Surf. Sci. 179 167 Google Scholar
[9]	韩秀峰 2014 自旋电子学导论 (北京: 科学出版社) 第13−20页 Han X F 2014 Introduction to Spintronics (Beijing: Science Press) pp13−20 (in Chinese)
[10]	Prezioso M, Riminucci A, Graziosi P, Bergenti I, Rakshit R, Cecchini R, Vianelli A, Borgatti F, Haag N, Willis M, Drew A J, Gillin W P, Dediu V A 2013 Adv. Mater. 25 534 Google Scholar
[11]	Tang Y, Li D C, Chen Z, Deng S P, Sun L Q, Liu W T, Shen L X, Deng S K 2018 Chin. Phys. B 27 118105 Google Scholar
[12]	Liu C Y, Miao L, Wang X Y, Wu S H, Zheng Y Y, Deng Z Y, Chen Y L, Wang G W, Zhou X Y 2018 Chin. Phys. B 27 047211 Google Scholar
[13]	Borges Z V, Poffo C M, de Lima J C, de Souza S M, Triches D M, Nogueira T P O, Manzato L, de Biasi R S 2016 Mater. Chem. Phys. 169 47 Google Scholar
[14]	Chung K M, Wamwangi D, Woda M, Wuttig M, Bensch W 2008 J. Appl. Phys. 103 083523 Google Scholar
[15]	Micoulaut M, Welnic W, Wuttig M 2008 Phys. Rev. B 78 224209 Google Scholar
[16]	Wang R Y, Caldwell M A, Jeyasingh R G D, Aloni S, Shelby R M, Wong H S P, Milliron D J 2011 J. Appl. Phys. 109 113506 Google Scholar
[17]	Lee S, Lee Y T, Park S G, Lee K H, Kim S W, Hwang D K, Lee K 2018 Adv. Electron. Mater. 4 1700563 Google Scholar
[18]	Xu P P, Fu T Z, Xin J Z, Liu Y T, Ying P J, Zhao X B, Pan H G, Zhu T J 2017 Sci. Bull. 62 1663 Google Scholar
[19]	Zhou X, Gan L, Tian W M, Zhang Q, Jin S Y, Li H Q, Bando Y, Golberg D, Zhai T Y 2015 Adv. Mater. 27 8035 Google Scholar
[20]	Fernandes P A, Sousa M G, Salome P M P, Leitao J P, da Cunha A F 2013 Crystengcomm 15 10278 Google Scholar
[21]	Saha S, Banik A, Biswas K 2016 Chem. Eur. J. 22 15634 Google Scholar
[22]	Shu Y J, Su X L, Xie H Y, Zheng G, Liu W, Yan Y G, Luo T T, Yang X, Yang D W, Uher C, Tang X F 2018 ACS Appl. Mater. Interfaces 10 15793 Google Scholar
[23]	Jameson J R, Gilbert N, Koushan F, Saenz J, Wang J, Hollmer S, Kozicki M N 2011 Appl. Phys. Lett. 99 063506 Google Scholar
[24]	van den Hurk J, Havel V, Linn E, Waser R, Valov I 2013 Sci. Rep. 3 2856 Google Scholar
[25]	van den Hurk J, Dippel A C, Cho D Y, Straquadine J, Breuer U, Walter P, Waser R, Valov I 2014 Phys. Chem. Chem. Phys. 16 18217 Google Scholar
[26]	Hasegawa T, Terabe K, Nakayama T, Aono M 2005 Nature 433 47 Google Scholar
[27]	Ohno T, Hasegawa T, Nayak A, Tsuruoka T, Gimzewski J K, Aono M 2011 Appl. Phys. Lett. 99 203108 Google Scholar
[28]	Zhang J J, Sun H J, Li Y, Wang Q, Xu X H, Miao X S 2013 Appl. Phys. Lett. 102 183513 Google Scholar
[29]	Wuttig M, Yamada N 2007 Nat. Mater. 6 824 Google Scholar
[30]	Han N, Kim S I, Yang J D, Lee K, Sohn H, So H M, Ahn C W, Yoo K H 2011 Adv. Mater. 23 1871 Google Scholar
[31]	Li Y, Zhong Y P, Zhang J J, Xu X H, Wang Q, Xu L, Sun H J, Miao X S 2013 Appl. Phys. Lett. 103 043501 Google Scholar
[32]	Wiedemeier H, Pultz G, Gaur U, Wunderlich B 1981 Thermochim. Acta 43 297 Google Scholar
[33]	Lagnier R, Ayache C, Harbec J Y, Jandl S, Jay-Gerin J P 1983 Solid State Commun. 48 65
[34]	Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427 Google Scholar
[35]	Du Y M, Pan H, Wang S J, Wu T, Feng Y P, Pan J S, Wee A T S 2012 Acs Nano 6 2517 Google Scholar
[36]	Chen X G, Ma X B, Yang Y B, Chen L P, Xiong G C, Lian G J, Yang Y C, Yang J B 2011 Appl. Phys. Lett. 98 122102 Google Scholar
[37]	Mark P, Helfrich W 1962 J. Appl. Phys. 33 205 Google Scholar
[38]	Montero J M, Bisquert J 2011 J. Appl. Phys. 110 327
[39]	Lampert M A 1956 Phys. Rev. 103 1648 Google Scholar
[40]	Kytin V, Dittrich T, Koch F, Lebedev E 2001 Appl. Phys. Lett. 79 108 Google Scholar
[41]	Zhang W, Thiess A, Zalden P, Zeller R, Dederichs P H, Raty J Y, Wuttig M, Bluegel S, Mazzarello R 2012 Nat. Mater. 11 952 Google Scholar

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Memristive and magnetoresistance effects of SnSe₂

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Corresponding author: Sun Zhi-Gang, sun_zg@whut.edu.cn

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Memristive and magnetoresistance effects of SnSe2

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Corresponding author: Sun Zhi-Gang, sun_zg@whut.edu.cn

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Memristive and magnetoresistance effects of SnSe₂