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A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 μm in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.
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Keywords:
- uni-traveling-carrier /
- photodiode /
- space charge screening effect
[1] Ozeki T, Hara E H 1976 Electron. Lett. 12 80
[2] Humphreys D A, Lobbett R A 1988 IEE Proceedings J. Optoelectronics 135 45
[3] Esman R D, Williams K J 1990 IEEE Photon. Technol. Lett. 2 502
[4] Williams K J, Esman R D, Dagenais M 1994 IEEE Photon. Technol. Lett. 5 639
[5] Dentan M, de Cremoux B 1990 IEEE J. Lightw. Technol. 8 1137
[6] Duan N, Wang X, Li N, Liu H D, Campbell J C 2006 IEEE J. Quantum Elect. 12 1255
[7] Williams K J, Esman R D 1998 IEEE Photon. Technol. Lett. 7 1015
[8] Jiang H, Yu P K L 1998 IEEE Photon. Technol. Lett. 11 1608
[9] Williams K J, Goetz P G 2000 IEEE International Topical Meeting on Microwave Photonics Oxford, UK, September 11—13 , 2000 P221
[10] Juodawlkis P W, O’Donnell F J, Hargreaves J J, Oakley D C, Napoleone A, Groves S H, Mahoney L J, Molvar K M, Missaggia L J, Donnelly J P, Williamson R C, Twichell J C 2002 The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Glasgow, Scotland, UK, November 10—14 , 2002 P426
[11] Guo J C, Zuo Y H, Zhang Y, Ding W C, Cheng B W, Yu J Z, Wang Q M 2007 IEEE J. Lightw. Technol. 9 2783
[12] Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron. Dev. Lett. 3 18
[13] Hill P, Schlafer J, Powazinik W, Urban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 18 1260
[14] Xia L C, Gao X J 2004 Semiconductor Optoelectronics 3 169(in Chinese)[夏力臣、高新江 2004半导体光电 3 169]
[15] Zhang Y X, Liao Z Y, Wang W 2009 Chin. Phys. B 18 2393
[16] Ishibashi T, Shimizu N 1997 Proc. Ultrafast Electron. Optoelectron. 13 83
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[1] Ozeki T, Hara E H 1976 Electron. Lett. 12 80
[2] Humphreys D A, Lobbett R A 1988 IEE Proceedings J. Optoelectronics 135 45
[3] Esman R D, Williams K J 1990 IEEE Photon. Technol. Lett. 2 502
[4] Williams K J, Esman R D, Dagenais M 1994 IEEE Photon. Technol. Lett. 5 639
[5] Dentan M, de Cremoux B 1990 IEEE J. Lightw. Technol. 8 1137
[6] Duan N, Wang X, Li N, Liu H D, Campbell J C 2006 IEEE J. Quantum Elect. 12 1255
[7] Williams K J, Esman R D 1998 IEEE Photon. Technol. Lett. 7 1015
[8] Jiang H, Yu P K L 1998 IEEE Photon. Technol. Lett. 11 1608
[9] Williams K J, Goetz P G 2000 IEEE International Topical Meeting on Microwave Photonics Oxford, UK, September 11—13 , 2000 P221
[10] Juodawlkis P W, O’Donnell F J, Hargreaves J J, Oakley D C, Napoleone A, Groves S H, Mahoney L J, Molvar K M, Missaggia L J, Donnelly J P, Williamson R C, Twichell J C 2002 The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society Glasgow, Scotland, UK, November 10—14 , 2002 P426
[11] Guo J C, Zuo Y H, Zhang Y, Ding W C, Cheng B W, Yu J Z, Wang Q M 2007 IEEE J. Lightw. Technol. 9 2783
[12] Windhorn T H, Cook L W, Stillman G E 1982 IEEE Electron. Dev. Lett. 3 18
[13] Hill P, Schlafer J, Powazinik W, Urban M, Eichen E, Olshansky R 1987 Appl. Phys. Lett. 18 1260
[14] Xia L C, Gao X J 2004 Semiconductor Optoelectronics 3 169(in Chinese)[夏力臣、高新江 2004半导体光电 3 169]
[15] Zhang Y X, Liao Z Y, Wang W 2009 Chin. Phys. B 18 2393
[16] Ishibashi T, Shimizu N 1997 Proc. Ultrafast Electron. Optoelectron. 13 83
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