-
Halide perovskites exhibit excellent electrical and optical properties, which are ideal active layer candidates for optoelectronic devices, particularly in high-performance photodetection where they demonstrate a competitive edge in development prospects. Among these, the all-inorganic perovskite CsPbBr3 has garnered widespread attention due to its better environmental stability. This paper demonstrated a vertical MSM-type CsPbBr3 thin-film photodetector characterized by fast response times and ultra-low dark current. The use of a vertical structure reduces the transit distance of photo carriers, enabling the device to achieve a fast response time of 63 μs, which is an improvement by two orders of magnitude compared to the traditional planar MSM-type photodetectors with response times of 10 ms. Then, by spinning a charge transport layer between the p-type CsPbBr3 and Ag electrodes, photocarriers effective separation at interface is realized and physical passivation between the perovskite and metal electrodes is also achieved. Due to the superior surface quality of the spun TiO2 film compared to the NiOX film, and through Sentaurus TCAD simulations and bandgap analyses, with TiO2 serving as the electron transport layer, it effectively inhibits the transmission of excess holes in p-type CsPbBr3. Consequently, the electron transport layer TiO2 is more effective at reducing dark current than the hole transport layer NiOX, with a dark current magnitude of only -4.81×10-12 A at a -1 V bias. Furthermore, this vertical MSM-type CsPbBr3 thin-film photodetector also boasts a large linear dynamic range (122 dB), high detectivity (1.16×1012 Jones), and good photo-stability. Through Sentaurus TCAD simulation, it was found that the charge transport layer selectively blocks carrier transmission, thereby reducing dark current. The simulation results are in good agreement with experimental data, providing theoretical guidance for a deeper understanding of the intrinsic physical mechanisms.
-
Keywords:
- CsPbBr3 /
- Photodetector /
- Vertical structure /
- Low dark current /
- High response speed
-
[1] Xu J, Li J, Wang H S, He C Y, Li J L, Bao Y N, Tang H Y, Luo H D, Liu X C, Yang Y M 2021 Adv. Mater. Interfaces 9 2101487
[2] Zhang Y, Wu C Y, Zhou X Y, Li J C, Tao X Y, Liu B Y, Chen J W, Chang Y J, Tong G Q, Jiang Y 2023 Mater. Today Phys. 36 101179
[3] Liu X Y, Liu Z Y, Li J J, Tan X H, Sun B, Fang H, Xi S, Shi T L, Tang Z R, Liao G L 2020 J. Mater. Chem. C 8 3337
[4] Perumalveeramalai C, Zheng J, Wang Y, Guo H L, Pammi S. V. N., Mudike R, Li C B 2024 Chem. Eng. J. 492 152213
[5] Wang Y Z, Kublitski J, Xing S, Dollinger F, Spoltore D, Benduhn J, Leo K 2022 Mater. Horizons 9 220-251
[6] Zheng J B, Yang D Z, Guo D C, Yang L Q, Li Ji, Ma D G 2023 ACS Photonics 10 1382
[7] Wang H D, Huang H X, Zha J J, Xia Y P, Yang P, Zeng Y H, Liu Y, Cao R, Wang B, Wang W, Zheng L, Chen Y, He Q Y, Chen X, Jiang K, Lin J H, Shi Z, Ho J C., Zhang H, Tan C L 2023 Adv. Opt. Mater. 11 2301508
[8] Gong W Q, Tian Y Z, Yan J, Gao F, Li L 2022 J. Mater. Chem. C 10 7460
[9] Qiao S, Liu J H, Wang R N, Guo L J, Wang S F, Pan A L, Pan C F 2023 Adv. Opt. Mater. 11 2300751
[10] Li X, Xiang Y, Wan J X, Xiao Z X, Yuan H, Sun J, Liu Y F, Dai G Z, Yang J L 2022 Org. Electron. 101 106409
[11] Zhu L P, Cheng X M, Wang A W, Shan Y S, Cao X L, Cao B Q 2023 Appl. Phys. Lett. 123 212105
[12] Hu T G, Zhao L X, Wang Y J, Lin H L, Xie S H, Hu Y, Liu C, Zhu W K, Wei Z M, Liu J, Wang K Y 2023 ACS Nano 17 8411-8419
[13] Zhao Z E, Tang W B, Zhang S H, Ding Y C, Zhao X F, Yuan G L 2023 J. Phys. Chem. C 127 4846
[14] Wang A W, Zhu L P, Shan Y S, Liu P, Cao X L, Cao B Q 2024 Acta Phys. Sin. 73 058503(in Chinese) [王爱伟 祝鲁平 单衍苏 刘鹏 曹学蕾 曹丙强 2024 物理学报 73 058503]
[15] Yan T T, Liu X Y, Zhang X Y, Hong E L, Wu L M, Fang X S 2023 Adv. Funct. Mater. 34 2311042
[16] Saleem M I, Sulaman M, Batool A, Bukhtiar A, Khalid S 2023 Energy Technol. 11 2300013
[17] Yuan B L, Wei H M, Li J W, Zhou Y, Xu F, Li J K, Cao B Q 2021 ACS Appl. Electron. Mater. 3 5592
[18] Ahirwar P, Kumar R 2023 Chem. Phys. Lett. 810 140180
[19] Bai T X Y., Wang S W., Bai L Y., Zhang K X., Chu C Y., Yi L X. 2022 Nanoscale Res. Lett. 17 69
[20] Yun K R, Lee T J, Kim S K, Kim J H, Seong T Y 2022 Adv. Opt. Mater. 11 2201974
[21] Mukhokosi E P, Maaza M 2022 J. Mater. Sci. 57 1555
[22] Sathyanarayana S, Krishnan K N, Das B C. 2024 Phys. Rev. Appl. 21 044015
[23] Cai J, Zhao T, Chen M M, Su J Y, Shen X M, Liu Y, Cao D W 2022 J. Phys. Chem. C 126 10007
[24] Zhou H P, Chen M W, Liu C G, Zhang R, Li J, Liao S N, Lu H F, Yang Y P 2023 Discov. Nano. 18 11
[25] Bhardwaj B, Bothra U, Singh S, Mills S, Ronningen T. J., Krishna S, Kabra D 2023 Appl. Phys. Rev. 10 021419
[26] Li G X, Wang Y K, Huang L X, Sun W H 2022 J. Alloy. Compd. 907 164432
[27] Alnuaimi A, Almansouri I, Nayfeh A 2016 J. Comput. Electron. 15 1110
[28] Wang T, Xiao J G, Sun R, Luo B L, Yi M X 2022 Chin. Phys. B 31 018801
[29] Luo X L, Hu Y, Lin Z H, Guo X, Zhang S Y, Shou C H, Hu Z S, Zhao X, Hao Y, Chang J J 2023 Sol. RRL 7 2300081
[30] Liu X Y, Li S Y, Li Z Q, Cao F, Su L, Shtansky D V., Fang X S 2022 ACS Appl. Mater. Interfaces 14 48936-48947
[31] Hu Z T, Shu X, Wang X, Li Y, Xu R, Hong F, Ma Z Q, Jiang Z M, Xu F 2022 Acta Phys. Sin. 71 116801(in Chinese) [胡紫婷 舒鑫 王香 李跃 徐闰 洪峰 马忠权 蒋最敏 徐飞 2022 物理学报 71 116801]
[32] Li G X, Wang Y K, Huang L X, Sun W H 2022 J. Alloy. Compd. 907 164432
[33] Wang S L, Li M Y, Song C Y, Zheng C L, Li J T, Li Z Y, Zhang Y T, Yao J Q 2023 Appl. Surf. Sci. 623 156983
[34] Yuan Y, Ji Z, Yan G H, Li Z W, Li J L, Kuang M, Jiang B Q, Zeng L L, Pan L K, Mai W J 2021 J. Mater. Sci. Technol. 75 39-47
[35] Liu X Y, Li S Y, Li Z Q, Cao F, Su L, Shtansky D V., Fang X S 2022 ACS Appl. Mater. Interfaces 14 48936-48947
[36] Wang H, Du Z T, Jiang X, Cao S, Zou B S, Zheng J J, Zhao J L 2024 ACS Appl. Mater. Interfaces 16 11694-11703
[37] Hua F, Du X, Huang Z Y, Gu Y T, Wen J F, Liu F C, Chen J X, Tang T 2023 J. Opt. Soc. Am. B-Opt. Phys. 41 55
[38] Zhang T, Cai S Y, Liang N N, Gao Y L, Li Y P, Liu F C, Long L Z, Liu J 2023 Phys. Scr. 99 015526
[39] Su L X, Li T F, Zhu Y 2022 Opt. Express 30 23330-23340
Metrics
- Abstract views: 142
- PDF Downloads: 5
- Cited By: 0