Vertical MSM-type CsPbBr<sub>3</sub> thin film photodetectors with fast response speed and low dark current

Cheng Xue-Ming; Cui Wen-Yu; Zhu Lu-Ping; Wang Xia; Liu Zong-Ming; Cao Bing-Qiang

doi:10.7498/aps.73.20241075

Abstract

Halide perovskites exhibit excellent electrical and optical properties and are ideal candidates for active layers in optoelectronic devices, especially in the field of high-performance photodetection, where they demonstrate a competitive advantage in terms of development prospects. Among them, the all-inorganic perovskite CsPbBr₃ has received widespread attention due to its better environmental stability. It is demonstrated in this work that a vertical MSM-type CsPbBr₃ thin-film photodetector has characteristics of fast response time and ultra-low dark current. The use of a vertical structure can reduce the transit distance of photo carriers, enabling the device to achieve a fast response time of 63 μs, which is two orders of magnitude higher than the traditional planar MSM-type photodetectors with a response time of 10 ms. Then, by spinning a charge transport layer between the p-type CsPbBr₃ and Ag electrodes, effective separation of photocarriers at the interface is realized and physical passivation between the perovskite and metal electrodes is also achieved. Due to the superior surface quality of the spun TiO₂ film compared with the NiO_x film, and through Sentaurus TCAD simulations and bandgap analyses, with TiO₂ serving as the electron transport layer, it effectively inhibits the transmission of excess holes in p-type CsPbBr₃. Consequently, the electron transport layer TiO₂ is more effective in reducing dark current than the hole transport layer NiO_x, with a dark current magnitude of only –4.81×10^–12 A at a –1 V bias. Furthermore, this vertical MSM-type CsPbBr₃ thin-film photodetector also has a large linear dynamic range (122 dB), high detectivity (1.16×10¹² Jones), and good photo-stability. Through Sentaurus TCAD simulation, it is found that the charge transport layer selectively blocks carrier transmission, thereby reducing dark current. The simulation results are in good agreement with experimental data, providing theoretical guidance for a more in-depth understanding of the intrinsic physical mechanisms.

Keywords:

Authors and contacts

1.
School of Material Science and Engineering, University of Jinan, Jinan 250022, China
2.
Nuchip Photoelectric Technology Co., Ltd., Zaozhuang 277299, China

Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

Funds: Project supported by the National Basic Research Program of China (Grant No. 2022YFC3700801), the Jinan Education Bureau, China (Grant No. JNSX2023015), and the Jinan Science and Technology Bureau, China (Grant No. 202333042).

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References

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Cited By

图 1 (a) 不同结构MSM型CsPbBr₃薄膜光电探测器结构示意图; (b) 使用PLD制备的CsPbBr₃薄膜的XRD扫描图; (c) CsPbBr₃薄膜的紫外-可见吸收光谱图和荧光光谱图; (d) 平面MSM型CsPbBr₃薄膜光电探测器响应速度图; (e) 垂直MSM型CsPbBr₃薄膜光电探测器响应速度图; (f) 450 nm激光照射下, 垂直/平面MSM型CsPbBr₃薄膜光电探测器的光暗电流图

Figure 1. (a) Schematic diagram of MSM-type CsPbBr₃ thin film photodetectors with different structures; (b) XRD patterns of CsPbBr₃ thin films prepared using PLD; (c) UV-visible absorption spectrum and fluorescence spectrum of CsPbBr₃ thin film; (d) response time graph of planar MSM-type CsPbBr₃ thin film photodetector; (e) response time graph of vertical MSM-type CsPbBr₃ thin film photodetector; (f) photo-dark current graph of vertical/planar MSM-type CsPbBr₃ thin film photodetector under 450 nm laser illumination.

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图 2 (a) CsPbBr₃薄膜裸漏的表面扫描电子显微镜(SEM)图; (b)旋涂的NiO_x薄膜表面SEM图; (c)旋涂的TiO₂薄膜表面SEM图; (d)旋涂的TiO₂薄膜断面SEM图; (e)如插图所示, –20 V偏压下, 与图(a), (b), 图(c)分别对应的器件电流-时间(I-T)曲线对比图

Figure 2. (a) Scanning Electron Microscope (SEM) image of the exposed surface of CsPbBr₃ thin film; (b) SEM image of the surface of spin-coated NiO_x thin film; (c) SEM image of the surface of spin-coated TiO₂ thin film; (d) cross-sectional SEM image of the spin-coated TiO₂ thin film; (e) as illustrated, comparison of the device current-time (I-T) curves under a –20 V bias corresponding to panels (a), (b), (c).

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图 3 (a) 不同界面缺陷态密度下垂直结构CsPbBr₃薄膜光电探测器模拟暗电流曲线; (b) 加入一层NiO_x薄膜后, CsPbBr₃/NiO_x薄膜器件总电流、电子电流和空穴电流的模拟I-V曲线图; (c) 加入一层TiO₂薄膜后, CsPbBr₃/TiO₂薄膜器件总电流、电子电流和空穴电流的模拟I-V曲线图; (d)—(f) 与图(a), (b), (c)对应的光电探测器件内部电流分布图

Figure 3. (a) Simulated dark current curves of vertical structure CsPbBr₃ thin film photodetectors under different interface defect state densities; (b) after adding a layer of NiO_x, simulated I-V curves showing total current, electron current, and hole current for CsPbBr₃/NiO_x thin film devices; (c) after adding a layer of TiO₂, simulated I-V curves showing total current, electron current, and hole current for CsPbBr₃/TiO₂ thin film devices; (d)–(f) diagrams showing the distribution of internal current in photodetector devices corresponding to figures (a), (b), (c).

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图 4 (a) CsPbBr₃薄膜的紫外光电子能谱图; (b) CsPbBr₃/NiO_x薄膜光电探测器的能带图; (c) CsPbBr₃/TiO₂薄膜光电探测器的能带图; (d) 450 nm光照, 在黑暗和不同光照强度下垂直MSM型CsPbBr₃薄膜光电探测器的I-V曲线图; (e) 450 nm光照, 在不同偏置电压下垂直MSM型CsPbBr₃薄膜光电探测器的I-T曲线图; (f) 垂直MSM型CsPbBr₃薄膜光电探测器的瞬态光响应曲线图

Figure 4. (a) Ultraviolet photoelectron spectroscopy of CsPbBr₃ thin films; (b) band diagram of CsPbBr₃/NiO_x thin film photodetectors; (c) band diagram of CsPbBr₃/TiO₂ thin film photodetectors; (d) I-V characteristics of vertical MSM-type CsPbBr₃ thin film photodetectors under 450 nm illumination, in darkness and at various light intensities; (e) I-T curves of vertical MSM-type CsPbBr₃ thin film photodetectors under 450 nm illumination at different bias voltages; (f) transient photocurrent response curves of vertical MSM-type CsPbBr₃ thin film photodetectors.

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图 5 (a) 450 nm光照和–20 V偏置, 不同光照强度下垂直MSM型CsPbBr₃薄膜光电探测器的光电流的绝对值大小; (b) 不同光照强度下的开关比; (c) 不同光照强度下的响应度; (d) 不同光照强度下的探测率

Figure 5. (a) The absolute magnitude of the photocurrent in vertical MSM-type CsPbBr₃ thin film photodetectors under 450 nm illumination and a -20 V bias at different light intensities; (b) on/off ratio at different light intensities; (c) responsivity at different light intensities; (d) detectivity at different light intensities.

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表 1 CsPbBr₃基薄膜光电探测器的性能对比

Table 1. Performance comparison of CsPbBr₃-based thin film photodetectors.

Detector	Structure	Dark current/(10^–10 A)	D*/(10⁹ Jones)	τ_rise/τ_fall/(ms/ms)	Ref.
CsPbBr₃NPLs/Ag	Planar	–0.37(–3 V)	9300	75/72	[35]
n-Si/CsPbBr₃/Au	Planar	0.003(0 V)	105	190/291	[36]
1D-TiO₂/0D-CsPbBr₃/Au	Planar	4(1 V)	1800	9348/5951	[37]
CsPbBr₃/ZnO	Vertical	–5(–5 V)	7	0.061/1.4	[38]
SnO₂/CsPbBr₃/Carbon	Vertical	330(0 V)	370	0.11/0.23	[39]
CsPbBr₃/TiO₂/Ag	Vertical	–0.0481(–1 V)	1160	0.063/0.162	This work

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[1]	Xu J, Li J, Wang H S, He C Y, Li J L, Bao Y N, Tang H Y, Luo H D, Liu X C, Yang Y M 2021 Adv. Mater. Interfaces 9 2101487 Google Scholar
[2]	Zhang Y, Wu C Y, Zhou X Y, Li J C, Tao X Y, Liu B Y, Chen J W, Chang Y J, Tong G Q, Jiang Y 2023 Mater. Today Phys. 36 101179 Google Scholar
[3]	Liu X Y, Liu Z Y, Li J J, Tan X H, Sun B, Fang H, Xi S, Shi T L, Tang Z R, Liao G L 2020 J. Mater. Chem. C 8 3337 Google Scholar
[4]	Perumalveeramalai C, Zheng J, Wang Y, Guo H L, Pammi S. V. N., Mudike R, Li C B 2024 Chem. Eng. J. 492 152213 Google Scholar
[5]	Wang Y Z, Kublitski J, Xing S, Dollinger F, Spoltore D, Benduhn J, Leo K 2022 Mater. Horiz. 9 220 Google Scholar
[6]	Zheng J B, Yang D Z, Guo D C, Yang L Q, Li Ji, Ma D G 2023 ACS Photonics 10 1382 Google Scholar
[7]	Wang H D, Huang H X, Zha J J, et al. 2023 Adv. Opt. Mater. 11 2301508 Google Scholar
[8]	Gong W Q, Tian Y Z, Yan J, Gao F, Li L 2022 J. Mater. Chem. C 10 7460 Google Scholar
[9]	Qiao S, Liu J H, Wang R N, Guo L J, Wang S F, Pan A L, Pan C F 2023 Adv. Opt. Mater. 11 2300751 Google Scholar
[10]	Li X, Xiang Y, Wan J X, Xiao Z X, Yuan H, Sun J, Liu Y F, Dai G Z, Yang J L 2022 Org. Electron. 101 106409 Google Scholar
[11]	Zhu L P, Cheng X M, Wang A W, Shan Y S, Cao X L, Cao B Q 2023 Appl. Phys. Lett. 123 212105 Google Scholar
[12]	Hu T G, Zhao L X, Wang Y J, Lin H L, Xie S H, Hu Y, Liu C, Zhu W K, Wei Z M, Liu J, Wang K Y 2023 ACS Nano 17 8411 Google Scholar
[13]	Zhao Z E, Tang W B, Zhang S H, Ding Y C, Zhao X F, Yuan G L 2023 J. Phys. Chem. C 127 4846 Google Scholar
[14]	王爱伟, 祝鲁平, 单衍苏, 刘鹏, 曹学蕾, 曹丙强 2024 物理学报 73 058503 Google Scholar Wang A W, Zhu L P, Shan Y S, Liu P, Cao X L, Cao B Q 2024 Acta Phys. Sin. 73 058503 Google Scholar
[15]	Yan T T, Liu X Y, Zhang X Y, Hong E L, Wu L M, Fang X S 2023 Adv. Funct. Mater. 34 2311042 Google Scholar
[16]	Saleem M I, Sulaman M, Batool A, Bukhtiar A, Khalid S 2023 Energy Technol. 11 2300013 Google Scholar
[17]	Yuan B L, Wei H M, Li J W, Zhou Y, Xu F, Li J K, Cao B Q 2021 ACS Appl. Electron. Mater. 3 5592 Google Scholar
[18]	Ahirwar P, Kumar R 2023 Chem. Phys. Lett. 810 140180 Google Scholar
[19]	Bai T X Y, Wang S W., Bai L Y, Zhang K X., Chu C Y., Yi L X. 2022 Nanoscale Res. Lett. 17 69 Google Scholar
[20]	Yun K R, Lee T J, Kim S K, Kim J H, Seong T Y 2022 Adv. Opt. Mater. 11 2201974 Google Scholar
[21]	Mukhokosi E P, Maaza M 2022 J. Mater. Sci. 57 1555 Google Scholar
[22]	Sathyanarayana S, Krishnan K N, Das B C. 2024 Phys. Rev. Appl. 21 044015 Google Scholar
[23]	Cai J, Zhao T, Chen M M, Su J Y, Shen X M, Liu Y, Cao D W 2022 J. Phys. Chem. C 126 10007 Google Scholar
[24]	Zhou H P, Chen M W, Liu C G, Zhang R, Li J, Liao S A, Lu H F, Yang Y P 2023 Discover Nano 18 11 Google Scholar
[25]	Bhardwaj B, Bothra U, Singh S, Mills S, Ronningen T. J., Krishna S, Kabra D 2023 Appl. Phys. Rev. 10 021419 Google Scholar
[26]	Liu T, Li C, Yuan B L, Chen Y, Wei H M, Cao B Q 2022 Appl. Phys. Lett. 121 012102 Google Scholar
[27]	Alnuaimi A, Almansouri I, Nayfeh A 2016 J. Comput. Electron. 15 1110 Google Scholar
[28]	Wang T, Xiao J G, Sun R, Luo L B, Yi M X 2022 Chin. Phys. B 31 018801 Google Scholar
[29]	Luo X L, Hu Y, Lin Z H, Guo X, Zhang S Y, Shou C H, Hu Z S, Zhao X, Hao Y, Chang J J 2023 Solar RRL 7 2300081 Google Scholar
[30]	Liu X Y, Li S Y, Li Z Q, Cao F, Su L, Shtansky D V, Fang X S 2022 ACS Appl. Mater. Interfaces 14 48936 Google Scholar
[31]	胡紫婷, 舒鑫, 王香, 李跃, 徐闰, 洪峰, 马忠权, 蒋最敏, 徐飞 2022 物理学报 71 116801 Google Scholar Hu Z T, Shu X, Wang X, Li Y, Xu R, Hong F, Ma Z Q, Jiang Z M, Xu F 2022 Acta Phys. Sin. 71 116801 Google Scholar
[32]	Li G X, Wang Y K, Huang L X, Sun W H 2022 J. Alloys Compd. 907 164432 Google Scholar
[33]	Wang S L, Li M Y, Song C Y, Zheng C L, Li J T, Li Z Y, Zhang Y T, Yao J Q 2023 Appl. Surf. Sci. 623 156983 Google Scholar
[34]	Yuan Y, Ji Z, Yan G H, Li Z W, Li J L, Kuang M, Jiang B Q, Zeng L L, Pan L K, Mai W J 2021 J. Mater. Sci. Technol. 75 39 Google Scholar
[35]	Wang H, Du Z T, Jiang X, Cao S, Zou B S, Zheng J J, Zhao J L 2024 ACS Appl. Mater. Interfaces 16 11694 Google Scholar
[36]	Hua F, Du X, Huang Z Y, Gu Y T, Wen J F, Liu F C, Chen J X, Tang T 2023 J. Opt. Soc. Am. B: Opt. Phys. 41 55 Google Scholar
[37]	Zhang T, Cai S Y, Liang N N, Gao Y L, Li Y P, Liu F C, Long L Z, Liu J 2023 Phys. Scr. 99 015526 Google Scholar
[38]	Su L X, Li T F, Zhu Y 2022 Opt. Express 30 23330 Google Scholar
[39]	Zhou H, Wang R, Zhang X H, Xiao B A, Shuang Z H, Wu D J, Qin P L 2023 IEEE Trans. Electron Devices 70 6435 Google Scholar

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Vertical MSM-type CsPbBr₃ thin film photodetectors with fast response speed and low dark current

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Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

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Vertical MSM-type CsPbBr3 thin film photodetectors with fast response speed and low dark current

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Corresponding author: Cao Bing-Qiang, mse_caobq@ujn.edu.cn

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Vertical MSM-type CsPbBr₃ thin film photodetectors with fast response speed and low dark current