High-performance photodetectors based on Au nanoislands decorated CdSSe nanobelt

Zhao Ji-Yu; Tan Qiu-Hong; Liu Lei; Yang Wei-Ye; Wang Qian-Jin; Liu Ying-Kai

doi:10.7498/aps.72.20222021

Abstract

Ternary alloy CdS_xSe_1–x has the physical properties of CdS and CdSe, and its band gap can be adjusted by changing the component ratio of the elements. The alloy has excellent photoelectric properties and has potential application in optoelectronic devices. Although one has made some research progress of the CdSSe-based photodetectors, their performances are still far from the commercial requirements, so how to improve the performance of the device is the focus of current research. In this work, a single crystal CdS_0.42Se_0.58 nanobelt device is first prepared by thermal evaporation. Under 550 nm illumination and 1 V bias, the ratio of photocurrent to dark current of the device is 1.24×10³, the responsivity arrives at 60.1 A/W, and the external quantum efficiency reaches 1.36×10⁴%, and the detectivity is 2.16×10¹¹ Jones. Its rise time and fall time are about 41.1/41.5 ms, respectively. Secondly, after the CdSSe nanobelt is decorated by Au nanoislands, the optoelectronic performance of the device is significantly improved. Under 550 nm illumination and 1 V bias, the I_p/I_d ratio, responsivity, external quantum efficiency and detectivity of the device are increased by 5.4, 11.8, 11.8 and 10.6 times, respectively, and the rise time and fall time are both reduced to half of counterparts of single CdSSe nanobelt. Finally, the microscopic physical mechanism of the enhanced optoelectronic performance of the device is explained based on localized surface plasmon resonance of Au nanoislands. After the combination of gold nanoislands and CdSSe nanobelt, the difference in Fermi level between them results in the transfer of electrons from CdSSe nanobelt to Au nanoislands, thus forming an internal electric field at the interface, which is directed from CdSSe nanobelt to Au nanoislands. Under illumination, the electrons in the Au nanoislands acquire enough energy to jump over the Schottky barrier because of localized surface plasmon resonance. These photoexcited hot electrons are trapped and stored in extra energy levels above the conduction band minimum, and then are cooled down to the band edge, thus realizing the transfer of electrons from Au nanoislands to CdSSe nanobelt. Moreover, the internal electric field also greatly promotes the transfer of hot electrons from Au nanoislands to CdSSe nanobelt, and inhibits the recombination of carriers at the interface, resulting in large photocurrent. Our work provides an effective strategy for fabricating high-performance photodetectors without increasing the device area.

Keywords:

Authors and contacts

1.
College of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China
2.
Yunnan Provincial Key Laboratory for Optoelectronic Information Technology, Yunnan Normal University, Kunming 650500, China
3.
Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials, Ministry of Education, Yunnan Normal University, Kunming 650500, China

Corresponding author: Tan Qiu-Hong, tanqiuhong1@126.com ; Wang Qian-Jin, qjwang@xtu.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61564010, 11864046, 11764046) and the Basic Research Program of Yunnan Province, China (Grant Nos. 202001AT070064, 202101AT070124).

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References

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Cited By

图 1 (a)和(b) CdSSe纳米带SEM图; (c) Au@CdSSe纳米带SEM图(插图为放大后的Au纳米岛的SEM图); (d)和(e) CdSSe纳米带的TEM图((e)插图为CdSSe纳米带的SAED图); (f) Au纳米粒子的TEM图

Figure 1. (a) and (b) SEM images of CdSSe nanobelts; (c) SEM images of Au@CdSSe nanobelts (inset: SEM images of Au nanoislands (NIS)); (d) and (e) TEM images of CdSSe nanobelts (inset: SAED images of CdSSe nanobelts in (e)); (f) TEM images of Au nanoparticles.

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图 2 (a) CdSSe纳米带的XRD图; (b)—(d) CdSSe纳米带的XPS图

Figure 2. (a) XRD patterns of CdSSe nanobelts; (b)–(d) XPS images of CdSSe nanobelts.

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图 3 (a)—(d) CdSSe纳米带的元素面扫描; (e)—(i)Au纳米岛@CdSSe纳米带的元素面扫描

Figure 3. (a)–(d) Element surface scanning of CdSSe nanobelt; (e)–(i) the element surface scan of the Au NIS @CdSSe nanobelts.

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图 4 (a) Au纳米岛@CdSSe纳米带器件SEM图以及(b)光电探测器示意图

Figure 4. The SEM image of (a) Au NIS@CdSSe nanobelts device and (b) its schematic illustrations.

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图 5 (a) CdSSe纳米带以及Au纳米岛@CdSSe纳米带光电探测器在1 V偏压下的光谱响应图; (b)单一CdSSe纳米带及Au纳米岛的紫外-可见光光谱图(插图为带隙拟合图); (c), (d) CdSSe纳米带以及Au纳米岛@CdSSe纳米带光电探测器在550 nm单色光、0.697 mW/cm²光功率密度下的I-V图

Figure 5. (a) Spectral response of CdSSe nanobelt and Au NIS@CdSSe nanobelt photodetectors at 1 V bias; (b) UV-visible spectrum of single CdSSe nanobelt (inset is bandgap diagram) and NIS; (c), (d) the I-V plots of CdSSe nanobelt and Au NIS@CdSSe nanobelt photodetectors under optical power density of 0.697 mW/cm² at 550 nm.

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图 6 (a) CdSSe纳米带光电探测器在550 nm单色光不同光功率密度下的I-V曲线图, 以及(b)光电流与光功率密度的函数拟合关系图; (c) Au纳米岛修饰的CdSSe纳米带光电探测器在550 nm单色光不同光功率密度下的I-V曲线图, 以及(d)光电流与光功率密度的函数拟合关系图

Figure 6. (a) The I-V curves of CdSSe nanobelt photodetectors with different optical power densities under 550 nm light, and (b) the fitting relation diagram of the function of photocurrent and optical power density; (c) the I-V curves of the Au NIS decorated CdSSe nanobelt photodetector with different optical power densities under 550 nm light, and (d) the fitting relation diagram of the function of photocurrent and optical power density.

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图 7 Au纳米岛修饰CdSSe纳米带前后探测器在550 nm单色光下光谱响应、外量子效率及探测率随光功率密度的变化关系图

Figure 7. Relationship between spectral response, external quantum efficiency, detectivity and optical power densities of CdSSe nanobelt and Au NIS decorated CdSSe nanobelt devices, respectively.

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图 8 (a), (b) CdSSe纳米带光电探测器在550 nm光功率密度为 0.697 mW/cm²下的周期性I-t图以及单个I-t图; (c), (d) Au纳米岛@CdSSe纳米带光电探测器在550 nm光功率密度为0.697 mW/cm²下的周期性I-t图以及单个I-t图

Figure 8. (a) and (b) Periodic I-t diagram and single I-t diagram of CdSSe nanobelt photodetector under 550 nm and optical power density of 0.697 mW/cm²; (c) and (d) the periodic I-t plots and individual I-t plots of the Au NIS@CdSSe nanobelt photodetector under 550 nm and optical power density of 0.697 mW/cm².

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图 9 Au纳米岛与CdSSe纳米带接触前后体系能带结构示意图　(a)接触前CdSSe纳米带在光激发下电子跃迁图; (b)接触后光激发下Au纳米岛@CdSSe纳米带电子转移示意图; E₀为真空能级、W_Au和W_CdSSe为Au和CdSSe的功函数、E_V和 E_C为价带顶和导带底

Figure 9. Band structure diagram of CdSSe nanoribbon before and after contact with Au NIS: (a) Electron transition diagram of pure CdSSe nanoribbon under photoexcitation; (b) schematic diagram of electron transfer of Au@CdSSe nanobelt under photoexcitation; E₀ is the vacuum energy level, W_Au and W_CdSSe are the work functions of Au and CdSSe, E_V and E_C are the valence band maximum and conduction band minimum, respectively

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表 1 基于其他低维度高性能光电探测器重要参数比较

Table 1. Comparison of important parameters based on other low-dimension high-performance photodetectors.

Device structure	Bias voltage/V	EQE/%	R/(A·W^–1)	I_p/I_d	D*/Jones	Rise/decay time	Ref.
CdS_0.76Se_0.24 NBs	1	19.1	10.4 (674 nm)	816	—	1.62/4.70 ms	[23]
2D CdS_0.14Se_0.86 flaks	5	1.94×10³	703 (450 nm)	23	3.41×10¹⁰	39/39 ms	[50]
CdSe Nanotubes	1	—	76 (氙灯)	1.29×10³	2.75×10¹⁰	1.85/0.2 s	[51]
2D CdS flake	2	—	0.18 (Visible)	10³	2.71×10⁹	14/8 ms	[52]
CdSSe NBs	1	1.36×10⁴	60.1 (550 nm)	1.24×10³	2.16×10¹¹	41.1/41.5 ms	This work
Au NIS@CdSSe NBs	1	1.61×10⁵	711.4 (550 nm)	6.70×10³	2.29×10¹²	22.6/23.0 ms	This work

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Vol. 72, Issue 9 - 2023-05-05

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