大面积单层二硫化钼的制备及其光电性能

武鹏; 谈论; 李炜; 曹立伟; 赵俊博; 曲尧; 李昂

doi:10.7498/aps.72.20230273

摘要

过渡金属硫族化合物(TMDCs)材料具有优异的电学和光电性能, 在下一代光电子器件中具有广阔的应用前景. 然而, 大面积均匀生长单层的TMDCs仍然具有相当大的挑战. 本工作提出了一种简单而有效的利用化学气相沉积(CVD)制备大面积单层二硫化钼(MoS₂)的方法, 并通过调整氧化物前驱体的比例, 调整MoS₂单晶/薄膜生长. 随后, 利用叉指电极掩膜板制备出单层MoS₂薄膜光电探测器. 最后, 在405 nm激光激发下, 不同电压和不同激光功率条件下均表现出高稳定和可重复的光电响应, 响应时间可达毫秒(ms)量级. 此外, 该光电探测器实现了405—830 nm的可见光到近红外的宽光谱检测范围, 光响应度(R)高达291.7 mA/W, 光探测率(D^* )最高达1.629 × 10⁹ Jones. 基于该CVD制备的单层MoS₂薄膜光电探测器具有成本低、能大规模制备, 且在可见光到近红外的宽光谱范围内具有良好的稳定性和重复性的优点, 为未来电子和光电子器件的应用提供了更多的可能性.

关键词:

Abstract

Transition metal dichalcogenide (TMDC) monolayers exhibit enhanced electrical and optoelectrical properties, which are promising for next-generation optoelectronic devices. However, large-scale and uniform growth of TMDC monolayers with large grain size is still a considerable challenge. Presented in this work is a simple and effective approach to fabricating largescale molybdenum (MoS₂) disulfide monolayers by chemical vapor deposition (CVD) method. It is found that MoS₂ grows from single crystal into thin film with the increase of oxide precursor proportion. The photodetector of large scale monolayer layer MoS₂ film is fabricated by depositing metal electrodes on the interdigital electrode mask through using thermal evaporation coating. Finally, the highly stable and repeatable photoelectric responses under the conditions of different voltages and different laser power are characterized under 405-nm laser excitation, with response time decreasing down to the order of milliseconds (ms). In addition, the photodetector achieves a wide spectral detection range from 405 nm to 830 nm, that is, from visible light to near-infrared light wavelength range, with optical response (R) of 291.7 mA/W and optical detection rate (D^*) of 1.629×10⁹ Jones. The monolayer MoS₂ thin film photodetector demonstrated here has the advantages of low cost, feasibility of large-scale preparation, and good stability and repeatability in the wide spectrum range from visible light to near infrared light wavelength, providing the possibilities for future applications of electronic and optoelectronic devices .

Keywords:

作者及机构信息

1.
北京工业大学材料与制造学部, 先进材料微观结构与性能北京市重点实验室, 北京　100124

2.
湖北大学物理与电子科学学院, 湖北省氢能安全检测与控制工程技术研究中心, 武汉　430062

通信作者: 李昂, ang.li@bjut.edu.cn

基金项目: 北京卓越科学家项目 (批准号: BJJWZYJH01201910005018)和国家重点研发计划(批准号: 2021YFA1200201)资助的课题.

Authors and contacts

1.
Beijing Key Lab of Microstructure and Properties of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

2.
Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy, School of Physics and Electronic Sciences, Hubei University, Wuhan 430062, China

Corresponding author: Li Ang, ang.li@bjut.edu.cn

Funds: Project supported by the Beijing Outstanding Young Scientists Projects, China (Grant No. BJJWZYJH01201910005018) and the National Key Research and Development Program, China (Grant No. 2021YFA1200201).

文章全文 : translate this paragraph

参考文献

[1]	Gao G Y, Yu J, Yang X X, Pang Y K, Zhao J, Pan C F, Sun Q J, Wang Z L 2018 Adv. Mater. 31 1806905
[2]	Li X F, Yang L M, Si M W, Li S C, Huang M Q, Ye P D, Wu Y Q 2015 Adv. Mater. 27 1547 Google Scholar
[3]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147 Google Scholar
[4]	Kaushik V, Ahmad M, Agarwal K, Varandani D, Belle B D, Das P, Mehta B R 2020 J. Phys. Chem. C 124 23368 Google Scholar
[5]	Bagot P A J, Silk O B W, Douglas J O, Pedrazzini S, Crudden D J, Martin T L, Hardy M C, Moody M P, Reed R C 2017 Acta Mater. 125 156 Google Scholar
[6]	Wang X D, Wang P, Wang J L, Hu W D, Zhou X H, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M H, Liao L, Jiang A Q, Sun J L, Meng X J, Chen X S, Lu W, Chu J H 2015 Adv. Mater. 27 6575 Google Scholar
[7]	Huang Z Z, Zhang T F, Liu J K, Zhang L H, Jin Y H, Wang J P, Jiang K, Fan S, Li Q Q 2019 ACS Appl. Electron. Mater. 1 1314 Google Scholar
[8]	Furchi M M, Polyushkin D K, Pospischil A, Mueller T 2014 Nano Lett. 14 6165 Google Scholar
[9]	Lee J, Pak S, Lee Y W, Cho Y, Hong J, Giraud P, Shin H S, Morris S M, Sohn J I, Cha S, Kim J M 2017 Nat. Commun. 8 14734 Google Scholar
[10]	Lee D, Hwang E, Lee Y, Choi Y, Kim J S, Lee S, Cho J H 2016 Adv. Mater. 28 9196 Google Scholar
[11]	Choi M S, Lee G H, Yu Y J, Lee D Y, Lee S H, Kim P, Hone J, Yoo W J 2013 Nat. Commun. 4 1624 Google Scholar
[12]	Chen Y F, Wang Y, Wang Z, Gu Y, Ye Y, Chai X L, Ye J F, Chen Y, Xie R Z, Zhou Y, Hu Z G, Li Q, Zhang L L, Wang F, Wang P, Miao J S, Wang J L, Chen X S, Lu W, Zhou P, Hu W D 2021 Nat. Electron. 4 357 Google Scholar
[13]	Wu P S, Ye L, Tong L, Wang P, Wang Y, Wang H L, Ge H N, Wang Z, Gu Y, Zhang K, Yu Y Y, Peng M, Wang F, Huang M, Zhou P, Hu W D 2022 Light Sci. Appl. 11 6 Google Scholar
[14]	Van Der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554 Google Scholar
[15]	Lee H S, Min S W, Chang Y G, Park M K, Nam T, Kim H, Kim J H, Ryu S, Im S 2012 Nano Lett. 12 3695 Google Scholar
[16]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805 Google Scholar
[17]	Li H, Wu J B, Ran F R, Lin M L, Liu X L, Zhao Y Y, Lu X, Xiong Q H, Zhang J, Huang W, Zhang H, Tan P H 2017 ACS Nano 11 11714 Google Scholar
[18]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[19]	Wang L, Meric I, Huang P Y, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L M, Muller D A, Guo J, Kim P, Hone J, Shepard K L, Dean C R 2013 Science 342 614 Google Scholar
[20]	Yi M, Shen Z G 2015 J. Mater. Chem. A 3 11700 Google Scholar
[21]	Ren S, Rong P, Yu Q 2018 Ceramics Int. 44 11940 Google Scholar
[22]	Withers F, Yang H, Britnell L, Rooney A P, Lewis E, Felten A, Woods C R, Sanchez Romaguera V, Georgiou T, Eckmann A, Kim Y J, Yeates S G, Haigh S J, Geim A K, Novoselov K S, Casiraghi C 2014 Nano Lett. 14 3987 Google Scholar
[23]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722 Google Scholar
[24]	Sharma M, Singh A, Aggarwal P, Singh R 2022 ACS Omega 7 11731 Google Scholar
[25]	Fu D, Zhao X, Zhang Y Y, Li L, Xu H, Jang A R, Yoon S I, Song P, Poh S M, Ren T 2017 J. Am. Chem. Soc. 139 9392 Google Scholar
[26]	Lee C H, Zhang Y, Johnson J M, Koltun R, Gambin V, Jamison J S, Myers R C, Hwang J, Rajan S 2020 Appl. Phys. Lett. 117 123102 Google Scholar
[27]	Jie W J, Yang Z B, Zhang F, Bai G X, Leung C W, Hao J H 2017 ACS Nano 11 6950 Google Scholar
[28]	Kodu M, Avarmaa T, Jaaniso R, Leemets K, Mändar H, Nagirnyi V 2016 Superlattices Microstruct. 98 18 Google Scholar
[29]	Wang J, Fan L, Wang X M, Xiao T T, Peng L P, Wang X M, Yu J, Cao L H, Xiong Z W, Fu Y J, Wang C B, Shen Q, Wu W D 2019 Appl. Surf. Sci. 494 651 Google Scholar
[30]	Gong Y J, Lin J H, Wang X L, Shi G, Lei S D, Lin Z, Zou X L, Ye G L, Vajtai R, Yakobson B I, Terrones H, Terrones M, Tay B K, Lou J, Pantelides S T, Liu Z, Zhou W, Ajayan P M 2014 Nat. Mater. 13 1135 Google Scholar
[31]	Hu S, Wang X F, Meng L, Yan X 2017 J. Mater. Sci. 52 7215 Google Scholar
[32]	Liu P Y, Luo T, Xing J, Xu H, Hao H Y, Liu H, Dong J J 2017 Nanoscale Res. Lett. 12 558 Google Scholar
[33]	Li M G, Yao J D, Wu X X, Zhang S C, Xing B R, Niu X Y, Yan X Y, Yu Y, Liu Y L, Wang Y W 2020 ACS Appl. Mater. Interfaces 12 6276 Google Scholar
[34]	Li J, Yang X D, Liu Y, Huang B L, Wu R X, Zhang Z W, Zhao B, Ma H F, Dang W Q, Wei Z, Wang K, Lin Z Y, Yan X X, Sun M Z, Li B, Pan X Q, Luo J, Zhang G Y, Liu Y, Huang Y, Duan X D, Duan X F 2020 Nature 579 368 Google Scholar
[35]	Zhang Z W, Huang Z W, Li J, Wang D, Lin Y, Yang X D, Liu H, Liu S, Wang Y L, Li B, Duan X F, Duan X D 2022 Nat. Nanotechnol. 17 493 Google Scholar
[36]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497 Google Scholar
[37]	Zhang W, Huang J K, Chen C H, Chang Y H, Cheng Y J, Li L J 2013 Adv. Mater. 25 3456 Google Scholar
[38]	Di Bartolomeo A, Genovese L, Foller T, Giubileo F, Luongo G, Croin L, Liang S J, Ang L K, Schleberger M 2017 Nanotechnology 28 214002 Google Scholar
[39]	Nie C B, Yu L Y, Wei X Z, Shen J, Lu W Q, Chen W M, Feng S L, Shi H F 2017 Nanotechnology 28 275203 Google Scholar
[40]	Han P, St Marie L, Wang Q X, Quirk N, El Fatimy A, Ishigami M, Barbara P 2018 Nanotechnology 29 20LT01 Google Scholar
[41]	Pak Y, Park W, Mitra S, Sasikala Devi A A, Loganathan K, Kumaresan Y, Kim Y, Cho B, Jung G Y, Hussain M M, Roqan I S 2018 Small 14 201703176
[42]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815 Google Scholar
[43]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302 Google Scholar
[44]	Li Y N, Li L N, Li S S, Sun J Y, Fang Y, Deng T 2022 ACS Omega 7 13615 Google Scholar
[45]	Zhao T G, Guo J X, Li T T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y Y, Xu T F, Xie R Z, Gao P Q, Wang X R, Hu W D 2023 Chem. Soc. Rev. 52 1650 Google Scholar
[46]	Suleman M, Lee S, Kim M, Nguyen V H, Riaz M, Nasir N, Kumar S, Park H M, Jung J, Seo Y 2022 ACS Omega 7 30074 Google Scholar
[47]	Sun P, Liu Y W, Ma J, Li W, Zhang K L, Yuan Y J 2019 CrystEngComm 21 6969 Google Scholar
[48]	Zhao T G, Zhong F, Wang S C, Wang Y K, Xu T F, Chen Y, Yu Y Y, Guo J X, Wang Z, Yu J C, Gao P Q 2022 Adv. Opt. Mater. 11 2202208
[49]	Sinha S, Kumar S, Arora SK, Sharma A, Tomar M, Wu H C, Gupta V 2021 J. Appl. Phys. 129 155304 Google Scholar

施引文献

图 1 (a) CVD生长单层MoS₂薄膜实验装置示意图; (b)化学反应区放大图; (c) CVD生长过程温度曲线

Fig. 1. (a) CVD experimental equipment for MoS₂ synthesis; (b) enlarged view of the chemical reaction zone; (c) temperature curve of CVD growth process.

下载: 全尺寸图片幻灯片

图 2 (a)—(d)不同MoO₃前驱体量下制备的MoS₂的SEM形貌; (e) MoS₂覆盖率随前驱体量的变化曲线; (f) MoS₂的AFM照片(插图)和图中黑线高度随位置的变化曲线

Fig. 2. (a)–(d) SEM morphologies of MoS₂ prepared under different volumes of MoO₃ precursor; (e) curve of MoS₂ coverage with precursor volume; (f) the height of MoS₂ as a function of position marked as black line in the inset, inset is AFM photograph of MoS₂.

下载: 全尺寸图片幻灯片

图 3 (a) MoS₂单晶光学显微镜图像; (b)单晶MoS₂的拉曼成像; (c) Si/SiO₂基底拉曼成像; (d)对应图(a)中各点的拉曼光谱; (e) MoS₂薄膜的光学显微镜图像; (f) MoS₂薄膜的拉曼成像; (g) Si/SiO₂基底拉曼成像; (h)图(e)各点对应的拉曼光谱

Fig. 3. (a) Optical microscope image of single crystal MoS₂; (b) Raman mapping of single crystal MoS₂; (c) Raman mapping of Si/SiO₂ substrate; (d) Raman spectra of each point in Fig. (a); (e) optical microscope image of thin film MoS₂; (f) Raman mapping of thin film MoS₂; (g) Raman mapping of Si/SiO₂ substrate; (h) Raman spectra of each point in Fig. (e).

下载: 全尺寸图片幻灯片

图 4 (a)叉指电极装置示意图; (b) Au和Ti/Au电极上的电流和电压曲线, 插图是MoS₂叉指器件实物图

Fig. 4. (a) Schematic diagram of interdigital device; (b) the current and voltage curve with Au and Ti/Au electrodes, the inset shows the image of the MoS₂ interdigital device.

下载: 全尺寸图片幻灯片

图 5 不同电压(a)和光功率(b)条件的电流随时间变化关系; 光电探测器件的响应度和探测率随波长(c)和光功率(d)的变化关系; 器件的响应上升时间(e)和下降恢复时间(f)

Fig. 5. The relation of current with time under different voltage conditions (a) and different optical power conditions (b); the relationship between the responsivity and the detection rate of the photodetector with wavelength (c) and with optical power (d); the rise time (e) and the recovery time (f) of the photodetector.

下载: 全尺寸图片幻灯片

[1]	Gao G Y, Yu J, Yang X X, Pang Y K, Zhao J, Pan C F, Sun Q J, Wang Z L 2018 Adv. Mater. 31 1806905
[2]	Li X F, Yang L M, Si M W, Li S C, Huang M Q, Ye P D, Wu Y Q 2015 Adv. Mater. 27 1547 Google Scholar
[3]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147 Google Scholar
[4]	Kaushik V, Ahmad M, Agarwal K, Varandani D, Belle B D, Das P, Mehta B R 2020 J. Phys. Chem. C 124 23368 Google Scholar
[5]	Bagot P A J, Silk O B W, Douglas J O, Pedrazzini S, Crudden D J, Martin T L, Hardy M C, Moody M P, Reed R C 2017 Acta Mater. 125 156 Google Scholar
[6]	Wang X D, Wang P, Wang J L, Hu W D, Zhou X H, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M H, Liao L, Jiang A Q, Sun J L, Meng X J, Chen X S, Lu W, Chu J H 2015 Adv. Mater. 27 6575 Google Scholar
[7]	Huang Z Z, Zhang T F, Liu J K, Zhang L H, Jin Y H, Wang J P, Jiang K, Fan S, Li Q Q 2019 ACS Appl. Electron. Mater. 1 1314 Google Scholar
[8]	Furchi M M, Polyushkin D K, Pospischil A, Mueller T 2014 Nano Lett. 14 6165 Google Scholar
[9]	Lee J, Pak S, Lee Y W, Cho Y, Hong J, Giraud P, Shin H S, Morris S M, Sohn J I, Cha S, Kim J M 2017 Nat. Commun. 8 14734 Google Scholar
[10]	Lee D, Hwang E, Lee Y, Choi Y, Kim J S, Lee S, Cho J H 2016 Adv. Mater. 28 9196 Google Scholar
[11]	Choi M S, Lee G H, Yu Y J, Lee D Y, Lee S H, Kim P, Hone J, Yoo W J 2013 Nat. Commun. 4 1624 Google Scholar
[12]	Chen Y F, Wang Y, Wang Z, Gu Y, Ye Y, Chai X L, Ye J F, Chen Y, Xie R Z, Zhou Y, Hu Z G, Li Q, Zhang L L, Wang F, Wang P, Miao J S, Wang J L, Chen X S, Lu W, Zhou P, Hu W D 2021 Nat. Electron. 4 357 Google Scholar
[13]	Wu P S, Ye L, Tong L, Wang P, Wang Y, Wang H L, Ge H N, Wang Z, Gu Y, Zhang K, Yu Y Y, Peng M, Wang F, Huang M, Zhou P, Hu W D 2022 Light Sci. Appl. 11 6 Google Scholar
[14]	Van Der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554 Google Scholar
[15]	Lee H S, Min S W, Chang Y G, Park M K, Nam T, Kim H, Kim J H, Ryu S, Im S 2012 Nano Lett. 12 3695 Google Scholar
[16]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805 Google Scholar
[17]	Li H, Wu J B, Ran F R, Lin M L, Liu X L, Zhao Y Y, Lu X, Xiong Q H, Zhang J, Huang W, Zhang H, Tan P H 2017 ACS Nano 11 11714 Google Scholar
[18]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666 Google Scholar
[19]	Wang L, Meric I, Huang P Y, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L M, Muller D A, Guo J, Kim P, Hone J, Shepard K L, Dean C R 2013 Science 342 614 Google Scholar
[20]	Yi M, Shen Z G 2015 J. Mater. Chem. A 3 11700 Google Scholar
[21]	Ren S, Rong P, Yu Q 2018 Ceramics Int. 44 11940 Google Scholar
[22]	Withers F, Yang H, Britnell L, Rooney A P, Lewis E, Felten A, Woods C R, Sanchez Romaguera V, Georgiou T, Eckmann A, Kim Y J, Yeates S G, Haigh S J, Geim A K, Novoselov K S, Casiraghi C 2014 Nano Lett. 14 3987 Google Scholar
[23]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722 Google Scholar
[24]	Sharma M, Singh A, Aggarwal P, Singh R 2022 ACS Omega 7 11731 Google Scholar
[25]	Fu D, Zhao X, Zhang Y Y, Li L, Xu H, Jang A R, Yoon S I, Song P, Poh S M, Ren T 2017 J. Am. Chem. Soc. 139 9392 Google Scholar
[26]	Lee C H, Zhang Y, Johnson J M, Koltun R, Gambin V, Jamison J S, Myers R C, Hwang J, Rajan S 2020 Appl. Phys. Lett. 117 123102 Google Scholar
[27]	Jie W J, Yang Z B, Zhang F, Bai G X, Leung C W, Hao J H 2017 ACS Nano 11 6950 Google Scholar
[28]	Kodu M, Avarmaa T, Jaaniso R, Leemets K, Mändar H, Nagirnyi V 2016 Superlattices Microstruct. 98 18 Google Scholar
[29]	Wang J, Fan L, Wang X M, Xiao T T, Peng L P, Wang X M, Yu J, Cao L H, Xiong Z W, Fu Y J, Wang C B, Shen Q, Wu W D 2019 Appl. Surf. Sci. 494 651 Google Scholar
[30]	Gong Y J, Lin J H, Wang X L, Shi G, Lei S D, Lin Z, Zou X L, Ye G L, Vajtai R, Yakobson B I, Terrones H, Terrones M, Tay B K, Lou J, Pantelides S T, Liu Z, Zhou W, Ajayan P M 2014 Nat. Mater. 13 1135 Google Scholar
[31]	Hu S, Wang X F, Meng L, Yan X 2017 J. Mater. Sci. 52 7215 Google Scholar
[32]	Liu P Y, Luo T, Xing J, Xu H, Hao H Y, Liu H, Dong J J 2017 Nanoscale Res. Lett. 12 558 Google Scholar
[33]	Li M G, Yao J D, Wu X X, Zhang S C, Xing B R, Niu X Y, Yan X Y, Yu Y, Liu Y L, Wang Y W 2020 ACS Appl. Mater. Interfaces 12 6276 Google Scholar
[34]	Li J, Yang X D, Liu Y, Huang B L, Wu R X, Zhang Z W, Zhao B, Ma H F, Dang W Q, Wei Z, Wang K, Lin Z Y, Yan X X, Sun M Z, Li B, Pan X Q, Luo J, Zhang G Y, Liu Y, Huang Y, Duan X D, Duan X F 2020 Nature 579 368 Google Scholar
[35]	Zhang Z W, Huang Z W, Li J, Wang D, Lin Y, Yang X D, Liu H, Liu S, Wang Y L, Li B, Duan X F, Duan X D 2022 Nat. Nanotechnol. 17 493 Google Scholar
[36]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497 Google Scholar
[37]	Zhang W, Huang J K, Chen C H, Chang Y H, Cheng Y J, Li L J 2013 Adv. Mater. 25 3456 Google Scholar
[38]	Di Bartolomeo A, Genovese L, Foller T, Giubileo F, Luongo G, Croin L, Liang S J, Ang L K, Schleberger M 2017 Nanotechnology 28 214002 Google Scholar
[39]	Nie C B, Yu L Y, Wei X Z, Shen J, Lu W Q, Chen W M, Feng S L, Shi H F 2017 Nanotechnology 28 275203 Google Scholar
[40]	Han P, St Marie L, Wang Q X, Quirk N, El Fatimy A, Ishigami M, Barbara P 2018 Nanotechnology 29 20LT01 Google Scholar
[41]	Pak Y, Park W, Mitra S, Sasikala Devi A A, Loganathan K, Kumaresan Y, Kim Y, Cho B, Jung G Y, Hussain M M, Roqan I S 2018 Small 14 201703176
[42]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815 Google Scholar
[43]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302 Google Scholar
[44]	Li Y N, Li L N, Li S S, Sun J Y, Fang Y, Deng T 2022 ACS Omega 7 13615 Google Scholar
[45]	Zhao T G, Guo J X, Li T T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y Y, Xu T F, Xie R Z, Gao P Q, Wang X R, Hu W D 2023 Chem. Soc. Rev. 52 1650 Google Scholar
[46]	Suleman M, Lee S, Kim M, Nguyen V H, Riaz M, Nasir N, Kumar S, Park H M, Jung J, Seo Y 2022 ACS Omega 7 30074 Google Scholar
[47]	Sun P, Liu Y W, Ma J, Li W, Zhang K L, Yuan Y J 2019 CrystEngComm 21 6969 Google Scholar
[48]	Zhao T G, Zhong F, Wang S C, Wang Y K, Xu T F, Chen Y, Yu Y Y, Guo J X, Wang Z, Yu J C, Gao P Q 2022 Adv. Opt. Mater. 11 2202208
[49]	Sinha S, Kumar S, Arora SK, Sharma A, Tomar M, Wu H C, Gupta V 2021 J. Appl. Phys. 129 155304 Google Scholar

[1]	段聪, 刘俊杰, 陈永杰, 左慧玲, 董健生, 欧阳钢. MoS₂/SiO₂界面黏附性能的尺寸和温度效应. 物理学报, 2024, 73(5): 056801. doi: 10.7498/aps.73.20231648
[2]	孙堂友, 余燕丽, 覃祖彬, 陈赞辉, 陈均丽, 江玥, 张法碧. 基于TiO₂纳米柱的多波段响应Cs₂AgBiBr₆双钙钛矿光电探测器. 物理学报, 2024, 73(7): 078502. doi: 10.7498/aps.73.20231919
[3]	宿冉, 奚昭颖, 李山, 张嘉汉, 姜明明, 刘增, 唐为华. 基于GaSe/Ga₂O₃异质结的自供电日盲紫外光电探测器. 物理学报, 2024, 73(11): 118502. doi: 10.7498/aps.73.20240267
[4]	王爱伟, 祝鲁平, 单衍苏, 刘鹏, 曹学蕾, 曹丙强. 利用脉冲激光沉积外延制备CsSnBr₃/Si异质结高性能光电探测器. 物理学报, 2024, 73(5): 058503. doi: 10.7498/aps.73.20231645
[5]	赵吉玉, 谭秋红, 刘磊, 杨伟业, 王前进, 刘应开. 基于Au纳米岛修饰的CdSSe纳米带光电探测器. 物理学报, 2023, 72(9): 098103. doi: 10.7498/aps.72.20222021
[6]	刘晓轩, 孙飞扬, 吴颖, 杨盛谊, 邹炳锁. 硅纳米线阵列光电探测器研究进展. 物理学报, 2023, 72(6): 068501. doi: 10.7498/aps.72.20222303
[7]	王月, 马杰. MoS₂中S原子空位形成的非绝热动力学研究. 物理学报, 2023, 72(22): 226101. doi: 10.7498/aps.72.20230787
[8]	宋雨心, 李玉琦, 王凌寒, 张晓兰, 王冲, 王钦生. 利用Li⁺插层调控WS₂光电器件响应性能研究. 物理学报, 2023, 72(22): 226801. doi: 10.7498/aps.72.20231000
[9]	王婉玉, 石凯熙, 李金华, 楚学影, 方铉, 匡尚奇, 徐国华. MoO₃覆盖层对MoS₂基光伏型光电探测器性能的影响. 物理学报, 2023, 72(14): 147301. doi: 10.7498/aps.72.20230464
[10]	费翔, 张秀梅, 付泉桂, 蔡正阳, 南海燕, 顾晓峰, 肖少庆. 基于熔融玻璃的预沉积法生长毫米级单晶MoS₂及WS₂-MoS₂异质结. 物理学报, 2022, 71(4): 048101. doi: 10.7498/aps.71.20211735
[11]	孔宇晗, 王蓉, 徐明生. CuPc/MoS₂范德瓦耳斯异质结荧光特性. 物理学报, 2022, 71(12): 128103. doi: 10.7498/aps.71.20220132
[12]	胡紫婷, 舒鑫, 王香, 李跃, 徐闰, 洪峰, 马忠权, 蒋最敏, 徐飞. 双配体策略制备大气环境下性能稳定的CsPbIBr₂光电探测器. 物理学报, 2022, 71(11): 116801. doi: 10.7498/aps.71.20212143
[13]	傅群东, 王小伟, 周修贤, 朱超, 刘政. 硅基底上二维硒氧化铋的化学气相沉积法合成及其光电探测应用. 物理学报, 2022, 71(16): 166101. doi: 10.7498/aps.71.20220388
[14]	舒衍涛, 张有为, 王顺. 基于过渡金属硫族化合物同质结的光电探测器. 物理学报, 2021, 70(17): 177301. doi: 10.7498/aps.70.20210859
[15]	赵一默, 黄志伟, 彭仁苗, 徐鹏鹏, 吴强, 毛亦琛, 余春雨, 黄巍, 汪建元, 陈松岩, 李成. 超薄介质插层调制的氧化铟锡/锗肖特基光电探测器. 物理学报, 2021, 70(17): 178506. doi: 10.7498/aps.70.20210138
[16]	邓文, 汪礼胜, 刘嘉宁, 余雪玲, 陈凤翔. 光电协控多层MoS₂记忆晶体管的阻变行为与机理研究. 物理学报, 2021, 70(21): 217302. doi: 10.7498/aps.70.20210750
[17]	孟宪成, 田贺, 安侠, 袁硕, 范超, 王蒙军, 郑宏兴. 基于二维材料二硒化锡场效应晶体管的光电探测器. 物理学报, 2020, 69(13): 137801. doi: 10.7498/aps.69.20191960
[18]	郑加金, 王雅如, 余柯涵, 徐翔星, 盛雪曦, 胡二涛, 韦玮. 基于石墨烯-钙钛矿量子点场效应晶体管的光电探测器. 物理学报, 2018, 67(11): 118502. doi: 10.7498/aps.67.20180129
[19]	安涛, 涂传宝, 龚伟. 具有光电倍增的宽光谱三相体异质结有机彩色探测器. 物理学报, 2018, 67(19): 198503. doi: 10.7498/aps.67.20180502
[20]	王尘, 许怡红, 李成, 林海军. 高性能SOI基GePIN波导光电探测器的制备及特性研究. 物理学报, 2017, 66(19): 198502. doi: 10.7498/aps.66.198502

计量

文章访问数: 4697
PDF下载量: 112
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板

大面积单层二硫化钼的制备及其光电性能