Recent research progress of ferroelectric negative capacitance field effect transistors

Chen Jun-Dong; Han Wei-Hua; Yang Chong; Zhao Xiao-Song; Guo Yang-Yan; Zhang Xiao-Di; Yang Fu-Hua

doi:10.7498/aps.69.20200354

Abstract

Ferroelectric negative capacitance field effect transistors(Fe-NCFETs) can break through the so-called “Boltzmann Tyranny” of traditional metal oxide semiconductor field effect transistors and reduce the subthreshold swing below 60 mV/dec, which could greatly improve the on/off current ratio and short-channel effect. Consequently, the power dissipation of the device is effectively lowered. The Fe-NCFET provides a choice for the downscaling of the transistor and the continuation of Moore’s Law. In this review, the representative research progress of Fe-NCFETs in recent years is comprehensively reviewed to conduce to further study. In the first chapter, the background and significance of Fe-NCFETs are introduced. In the second chapter, the basic properties of ferroelectric materials are introduced, and then the types of ferroelectric materials are summarized. Among them, the invention of hafnium oxide-based ferroelectric materials solves the problem of compatibility between traditional ferroelectric materials and CMOS processes, making the performance of NCFETs further improved. In the third chapter, the advantages and disadvantages of Fe-NCFETs with MFS, MFIS and MFMIS structures are first summarized, then from the perspective of atomic microscopic forces the “S” relationship curve of ferroelectric materials is derived and combined with Gibbs free energy formula and L-K equation, and the intrinsic negative capacitance region in the free energy curve of the ferroelectric material is obtained. Next, the steady-state negative capacitance and transient negative capacitance in the ferroelectric capacitor are discussed from the aspects of concept and circuit characteristics; after that the working area of negative capacitance Fe-NCFET is discussed. In the fourth chapter, the significant research results of Fe-NCFETs combined with hafnium-based ferroelectrics in recent years are summarized from the perspective of two-dimensional channel materials and three-dimensional channel materials respectively. Among them, the Fe-NCFETs based on three-dimensional channel materials such as silicon, germanium-based materials, III-V compounds, and carbon nanotubes are more compatible with traditional CMOS processes. The interface between the channel and the ferroelectric layer is better, and the electrical performance is more stable. However, thereremain some problems to be solved in three-dimensional channel materials such as the limited on-state current resulting from the low effective carrier mobility of the silicon, the small on/off current ratio due to the leakage caused by the small bandgap of the germanium-based material, the poor interfacial properties between the III-V compound materials and the dielectric layer, and the ambiguous working mechanism of Fe-NCFETs based on carbon nanotube. Compared with Fe-NCFETs based on three-dimensional channel materials, the Fe-NCFETs based on two-dimensional channel materials such as transition metal chalcogenide, graphene, and black phosphorus provide the possibility for the characteristic size of the transistor to be reduced to 3 nm. However, the interface performance between the two-dimensional channel material and the gate dielectric layer is poor, since there are numerous defect states at the interface. Furthermore, the two-dimensional channel materials have poor compatibility with traditional CMOS process. Hence, it is imperative to search for new approaches to finding a balance between device characteristics. Finally, the presently existing problems and future development directions of Fe-NCFETs are summarized and prospected.

Keywords:

Authors and contacts

1.
Engineering Research Center of Semiconductor Integrated Technology, Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Han Wei-Hua, weihua@semi.ac.cn ; Yang Fu-Hua, fhyang@semi.ac.cn

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图 1 IRDS提出的SS路线图^[8]

Figure 1. Roadmap of subthreshold swing (SS) proposed by IRDS^[8].

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图 2 介电体分类示意图

Figure 2. The schematic diagram of the classification of dielectrics.

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图 3 铁电电滞回线^[41]

Figure 3. Ferroelectric hysteresis loop^[41].

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图 4 有机钙钛矿A(NH₄)X₃家族化学和晶格结构^[56]　(a) 有机钙钛矿铁电体的三维化学结构组成图; (b) 铁电相MDABCO-NH₄I₃在293 K时的晶胞结构图, 右侧椭圆中为有机正离子的空间结构示意图, 其对称性接近于球体; (c) 铁电相MDABCO-NH₄I₃在463 K时的晶胞结构图

Figure 4. Chemical and crystal structures of the metal-free A(NH₄) X₃ family^[56]: (a) Chemical structures of constituents of the metal-free 3D perovskite ferroelectrics; (b) the packing diagram of MDABCO–NH₄I₃ in the ferroelectric phase at 293 K. The oval to the right contains the space-fill diagram of the organic cation, showing the cationic geometry to be close to a ball; (c) the packing diagram of MDABCO–NH₄I₃ in the paraelectric phase at 463 K.

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图 5 场效应晶体管转移特性曲线

Figure 5. The transfer characteristic curve of field effect transistors.

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图 6 标准场效应晶体管结构示意图与其等效电容电路^[73]

Figure 6. The schematic diagram of a standard field effect transistors.structure and its eauivalent circuit of capacitance^[73].

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图 7 器件结构图　(a) 传统MOSFETs; (b) MFIS; (c) MFMIS

Figure 7. Device structure diagram: (a) Traditional MOSFETs; (b) MFIS; (c) MFMIS.

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图 8 (a) 钙钛矿型(ABO₃)铁电体的晶胞结构图^[85]; (b) (200)晶面的极化场分布图^[85]

Figure 8. (a) Conventional unit cell of an FE perovskite (ABO₃)^[85]; (b) schematic of the dipole fields in the (200) plane^[85].

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图 9 铁电体极化强度P和电场E之间的关系　(a) P-E关系图; (b) 电滞回线图

Figure 9. The relationship between polarization P and electric field E of ferroelectrics: (a) P vs. E; (b) hysteresis diagram.

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图 10 (a) 铁电体的Q_FE-V_FE关系图; (b)铁电体的U_FE-Q_FE关系图

Figure 10. (a) Q_FE vs. V_FE of ferroelectrics; (b) U_FE vs. Q_FE of ferroelectrics.

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图 11 不同电容系统的自由能曲线形貌^[90]

Figure 11. Energy landscapes of C_FE, C_DE and their series combination^[90].

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图 12 小信号测量模式测量铁电体NC　(a) 等效电路图^[91]; (b) LAO/BSTO超晶格结构示意图^[90]; (c) 电容与电压的关系^[90]

Figure 12. Ferroelectric NC measured by small-signal measurement mode: (a) Equivalent circuit diagram^[91]; (b) schematic diagram of a LAO/BSTO superlattice stack^[90]; (c) capacitance dependence on voltage^[90].

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图 13 测量铁电体瞬态NC的R-C_FE等效电路图^[99]

Figure 13. The schematic of a R-C_FE circuit for studying the transient NC in ferroelectrics^[99].

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图 14 瞬态NC模拟结果^[99]　(a) 输入电压, 输出电压和铁电电容上自由电荷与时间的关系图; (b) 极化强度和自由电荷与时间的关系图; (c) 极化强度和自由电荷对时间的微分结果及其差值随时间的变化曲线; (d) 铁电电容电压的变化速度随时间的变化曲线

Figure 14. The simulation results of transient NC^[99]: (a) Input voltage, output voltage, and free charge on a ferroelectric capacitor as functions of time; (b) polarization and free charge as functions of time; (c) charge density per unit time for free charge and polarization and the difference between them; (d) change in the voltage across a ferroelectric capacitor per unit time as a function of time.

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图 15 (a) 外电阻对R-C_FE电路中瞬态NC的影响; (b) 粘度系数对R-C_FE电路中瞬态NC的影响^[99]

Figure 15. (a) The effect of the external resistance on transient NC in a R-C_FE circuit; (b)the effect of the viscosity coefficient on transient NC in a R-C_FE circuit^[99].

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图 16 器件电容电荷量与电压的关系　(a) 电容模型; (b) ${C_{\rm{S}}} < \left| {{C_{{\rm{FE}}}}} \right|$; (c) ${C_{\rm{S}}} < \left| {{C_{{\rm{FE}}}}} \right|$; (d) Fe-NCFETs^[91]; (e) Fe-FET^[91]

Figure 16. The relationship between capacitive charge and voltage of the device: (a) Capacitance model; (b) ${C_{\rm{S}}} < \left| {{C_{{\rm{FE}}}}} \right|$; (c) ${C_{\rm{S}}} < \left| {{C_{{\rm{FE}}}}} \right|$ (d) Fe-NCFETs^[91]; (e) Fe-FETs^[91].

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图 17 平面型硅基- HfAlO Fe-NCFETs^[116]　(a) 器件截面透射电子显微镜(transmission electron microscope, TEM)图; (b) 剩余极化强度与TaN中N含量的关系曲线; (c) F离子钝化作用对铁电层能带影响的示意图; (d) 不同处理作用后器件的SS与源漏电压的关系

Figure 17. Planar Silicon based HfAlO Fe-NCFETs^[116]: (a) HR TEM cross-section image; (b) polarization as a function of nitrogen content of TaN; (c) schematic band diagram of HfAlO before and after F-passivation; (d) SS as a function of V_DS after different treatments.

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图 18 硅基NCFinFET^[123]　(a) 器件截面TEM图; (b) 铁电NCFinFET的栅压放大系数与栅压的关系曲线; (c) 常规FinFET和铁电NCFinFET的SS与栅压的关系曲线

Figure 18. Silicon based NC-FinFET^[123]: (a) TEM cross-sectional image of NC-FinFET with TiN internal gate, HfZrO FE film and TiN gate; (b) the gate amplification coefficient as a function of V_G for NC-FinFET; (c) SS as a function of V_G for conventional FinFET and NC-FinFET.

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图 19 (a)硅基铁电NCp-FinFET截面TEM图^[124]; (b) 源漏电流与栅长关系曲线^[124]

Figure 19. (a) TEM cross-sectional image of silicon based NC-p-FinFET^[124]; (b) I_DS as a function of gate length^[124].

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图 20 双层堆叠硅纳米线GAA结构Fe-NCFETs^[126]　(a) 器件截面TEM图; (b) 沟道部分高分辨率TEM图; (c) HZO层的掠入角XRD曲线

Figure 20. Two-layer stacked silicon nanowire GAA Fe-NCFETs^[126] : (a) TEM cross-sectional image of the device; (b) HRTEM of a portion of the channel; (c) the GIXRD spectrum for the as-deposited HZO layer.

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图 21 Ge基- HZO NCP型晶体管^[129]　(a) Ge沟道器件结构示意图; (b) Ge-Sn沟道器件结构示意图; (c) Ge沟道器件转移特性曲线; (d) Ge-Sn沟道器件转移特性曲线

Figure 21. Germanium based HZO NC-pFET^[129]: (a) Schematic diagram of the device with Ge channel; (b) schematic diagram of the device with Ge-Sn channel; (c) transfer characteristic curve of the device with Ge channel; (d) transfer characteristic curve of the device with Ge-Sn channel.

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图 22 锗纳米线Fe-NCFETs^[135]　(a) 栅压扫描范围为 ±5 V时在不同扫描时间下的转移特性曲线; (b) 栅压扫描范围为 ±5 V时的回滞电压与扫描时间关系曲线; (c) 不同栅压扫描范围下的I_{D, Max}与扫描时间关系曲线

Figure 22. Germanium nanowire NC-pFET^[135]: (a) The transfer characteristic curve at different sweep times for ±5 V sweep range; (b) hysteresis versus sweep time for ±5 V sweep range; (c) maximum drain current versus sweep time for different sweep ranges.

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图 23 In_0.53Ga_0.47As沟道Fe-NCFETs　(a) 平面型器件的结构示意图^[136]; (b) Fin结构器件的结构示意图平^[137]; (c) 平面型器件的转移特性曲线^[136]; (d) Fin结构器件的转移特性曲线^[137]

Figure 23. In_0.53Ga_0.47As channel Fe-NCFETs: (a) Schematic diagram^[136] and (c) transfer characteristic curve of planar device^[136]; (b) schematic diagram^[137] and (d) transfer characteristic curve of Fin device^[137].

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图 24 碳纳米管Fe-NCFETs^[138]　(a) 器件横截面TEM图; (b) 电滞回线; (c) 转移特性曲线; (d) 栅电流和栅压的关系曲线

Figure 24. Carbon nanotube Fe-NCFETs^[138]: (a) TEM cross-sectional image; (b) P_r vs. E; (c) the transfer characteristic curve; (d) I_GS as a function of V_GS.

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图 25 MoS₂铁电NC体晶体管^[145]　(a) 器件结构图; (b) V_G = ± 7 V的转移特性曲线; (c) V_G = ± 10 V时的转移特性曲线

Figure 25. MoS₂ Fe-NCFETs^[145]: (a) Structure of the device; (b)transfer characteristic curve of V_G = ± 7 V; (c)transfer characteristic curve of V_G = ± 10 V.

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图 26 WSe₂铁电NC体晶^[140]　(a) MFIS型器件结构图; (b) MFMIS型器件结构图; (c) MFIS型器件的转移特性曲线; (d) MFMIS型器件的转移特性曲线

Figure 26. WSe₂ Fe-NCFETs^[140]: (a) Structure of MFIS device; (b) structure of MFMIS device; (c) transfer characteristic curve of MFIS device; (d) transfer characteristic curve of MFMIS device.

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图 27 石墨烯- Hf_xAl_yO₂晶体管^[154]　(a) 在石墨烯/二氧化硅衬底上沉积的Hf_xAl_yO₂薄膜; (b) Hf_xAl_yO₂的相对介电常数; (c) 不同Al组分下Hf_xAl_yO₂三个相的能量差; (d) 转移特性曲线(9.5% Al)

Figure 27. Graphene-Hf_xAl_yO₂ transistor^[154]: (a) Hf_xAl_yo₂ films deposited on graphene/SiO₂ substrates; (b) relative dielectric constant of Hf_xAl_yO₂; (c) energy difference among three phases in Hf_xAl_yO₂ with different Al concentrations; (d) transfer characteristic curve.

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图 28 黑磷铁电NC体晶体管^[155]　(a) 器件结构图; (b) 转移特性曲线; (c) 不同I_d下的SS

Figure 28. Black phosphorus Fe-NCFETs^[155]: (a) Structure of the device; (b) transfer characteristic curve; (c) SS in different I_d.

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图 29 实验报道的Fe-NCFETs的SS与Hysteresis关系图 (2D^{[30,33,108,140,144,146-148,155]}, Si^{[25,116,118,119,121,123-126]}, GeSn^{[129,130,134,156]}, InGaAs^[136,137])

Figure 29. SS versus Hysteresis of the reported Fe-NCFETs (2D^{[30,33,108,140,144,146-148,155]}, Si^{[25,116,118,119,121,123-126]}, GeSn^{[129,130,134,156]}, InGaAs^[136,137]).

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表 1 实验报道的Fe-NCFETs的性能参数对比

Table 1. Performance comparison of the reported Fe-NCFETs.

MOS structure	Channel materials	Gate structure	Ferroelectric materials	t_FE/nm	SS_min/ (mV·dec^–1)	Hysteresis/V	Orders of I_DS	V_D/V	I_ON/I_OFF	Year	Ref.
Planar	p-Si	MFIS	Hf_0.65Zr_0.35O₂	30	5	—	—	–0.5	10⁴	2014	^[115]
Planar	n-Si	MFIS	HfAlO (Al: 6%)	10	Sub-25	0.02	4	0.2	10⁸	2017	^[116]
Planar	n-Si	MFIS	Hf_0.75Zr_0.25O₂	10	40	Free	1	0.2	10⁷	2018	^[119]
Planar	n-Si	MFIS	Hf_0.53Zr_0.47O₂	5	~40	~0.1	2	0.2	10⁷	2019	^[121]
Planar	n-Si	MFIS	HfAlO (Al: 4%)	10	Sub-30	0.02	4	0.2	10⁸	2019	^[118]
FinFET	n-Si	MFIS	Hf_0.5Zr_0.5O₂	4	Sub-30	0.003	2	0.05	10⁷	2018	^[25]
FinFET	n-Si	MFMIS	Hf_0.42Zr_0.58O₂	5	58	0.003	1	0.1	10⁵	2015	^[123]
FinFET	n-Si	MFIS	Hf_0.5Zr_0.5O₂	5	Sub-60	Free	—	0.1	10⁷	2019	^[125]
FinFET	p-Si	MFMIS	Hf_0.42Zr_0.58O₂	3	34.5	0.009	2	–0.05	10⁴	2019	^[124]
FinFET	n-Si	MFIS	Hf_0.5Zr_0.5O₂	5	Sub-60	Free	—	0.1	10⁷	2019	^[125]
GAA	poly n-Si	MFIS	Hf_0.5Zr_0.5O₂	10	26.84	0.003	4	0.1	10⁸	2019	^[126]
Planar	p-Ge	MFMIS	Hf_0.5Zr_0.5O₂	6.5	43	2.34	1	–0.05	10³	2016	^[129]
Planar	p-GeSn	MFMIS	Hf_0.5Zr_0.5O₂	6.5	40	0.41	2	–0.05	10³	2016	^[129]
Planar	p-GeSn	MFMIS	Hf_0.5Zr_0.5O₂	6	Sub-20	< 0.01	2	–0.05	10⁴	2017	^[130]
Planar	p-Ge	MFMIS	Hf_0.5Zr_0.5O₂	4.5	~87.5	Free	—	–0.05	10³	2019	^[156]
Planar	p-Ge	MFIS	Hf_0.67Zr_0.33O₂	7	~125	~0.105	—	–0.5	10⁴	2019	^[134]
Planar	n-InGaAs	MFIS	Hf_0.5Zr_0.5O₂	8	23	~0.2	3	0.05	10⁵	2018	^[136]
FinFET	n-InGaAs	MFIS	Hf_0.5Zr_0.5O₂	5	23	0.2	1	0.05	10³	2019	^[137]
GAA	nanotube	MFMIS	HfAlO(Al: 7%)	10	~45	—	—	0.05	10⁴	2018	^[138]
2D-FET	MoS₂	MFMIS	Hf_1-xZr_xO₂	15	Sub-60	1.2	3	0.5	10⁵	2017	^[146]
2D-FET	MoS₂	MFMIS	Hf_0.5Zr_0.5O₂	15	6.07	0.5	4	0.5	10⁵	2017	^[33]
2D-FET	MoS₂	MFMIS	HfAlO(Al:7.3%)	10	57	0.5	4	0.5	10⁵	2017	^[108]
2D-FET	MoS₂	MFMIS	HfZrO_x	15	47	2.5	1	0.1	10⁶	2018	^[30]
2D-FET	MoS₂	MFIS	Hf_0.5Zr_0.5O₂	20	Sub-60	< 0.005	4	0.5	10⁶	2018	^[147]
2D-FET	MoS₂	MFIS	Hf_0.5Zr_0.5O₂	20	23	0.077	6	0.1	10⁹	2017	^[144]
2D-FET	WSe₂	MFMIS	Hf_0.5Zr_0.5O₂	20	14.4	0.12	2	–0.1	10⁵	2018	^[140]
2D-FET	WSe₂	MFIS	Hf_0.5Zr_0.5O₂	10	18.2	0.02	4	–0.1	10⁴	2018	^[148]
2D-FET	Graphene	MFS	HfAlO(Al:9.5%)	5	—	—	—	0.1	2.75	2016	^[154]
2D-FET	BP	MFMIS	Hf_0.5Zr_0.5O₂	20	104	0.5	—	0.1	10²	2019	^[155]

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