Secondary electron emission suppression on alumina surface and its application in multipactor suppression

Meng Xiang-Chen; Wang Dan; Cai Ya-Hui; Ye Zhen; He Yong-Ning; Xu Ya-Nan

doi:10.7498/aps.72.20222404

Abstract

For the high-power microwave (HPM) components applied to the space environment, the seed electrons in the components may resonate with the radio-frequency electrical field and may further lead the secondary electron multiplication to occur, triggering off the phenomenon of multipactor. Multipactor deteriorates the performance of the components, and in severe circumstances, it is even possible to result in the failure of the components or the spacecraft. Alumina ceramic possesses good dielectricity, high hardness, good thermal isolation, low dielectric loss, etc., so it is widely used in HPM systems including dielectric windows, and many other microwave components. However, alumina ceramic possesses a relatively high level of secondary electron yield (SEY or δ), indicating that the devastating effect of multipactor discharge is likely to be triggered off inside the alumina-filled HPM components in the space environment. In this work, the model of alumina loaded coaxil low pass fillter is simulated to verify that reducing the SEY of the alumina surface is effective and necessary to improve the multipactor threshold. After that, we use several technologies to achieve an ultralow SEY on the alumina surface. Firstly, a series of microstructures with different porosities and aspect ratios is fabricated. The results indicate that the microstructure with 67.24% porosity and 1.57 aspect ratio shows an excellent low-SEY property, which is able to suppress the SEY peak value (δ_m) of alumina from 2.46 to 1.10. Then, various process parameters are used to fabricate TiN films on silicon sheets. Experimental results indicate that the TiN film achieves the lowest δ_m of 1.19 when the gas flow ratio of N₂∶Ar is 7.5∶15. Thereafter, we deposit TiN ceramic coating onto the laser-etched microstructure samples, and an ultralow δ_m of 0.79 is finally achieved on alumina surface. Then we implement a qualitative analysis to explore the influence of surface charge on the secondary electron emission and multipactor for the microstructured alumina surface, discuss the mechanism of low-SEY surfaces mitigating unilateral and bilateral multipactor. For verifying the actual effect of low-SEY technologies on the suppression of multipactor, we use the technologies of constructing microstructure and depositing TiN films on the alumina surface which is filled in the designed coaxial low pass filter. Finally, we obtain a significant improvement in the multipactor threshold for the filter, which increases from 125 W to 650 W, and the improvement is 7.16 dB. This work develops an effective method to reduce SEY for alumina, which is of great scientific significance in revealing the mechanism of multipactor for the dielectric-filled microwave components and also is of engineering application significance in improving the reliability of HPM components.

Keywords:

Authors and contacts

1.
School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
2.
ZhongKe Atomically Precise Manufacturing Technology Co., Ltd, Xi’an 710119, China
3.
Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, China
4.
Xi’an TST Testing Technique Co., Ltd, Xi’an 710076, China
5.
Shanghai Engineering Research Center of Space Engine, Shanghai Institute of Space Propulsion, Shanghai 201112, China

Corresponding author: Wang Dan, alexaustin@xjtu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant. Nos. 62101425, 52127817), the Key Research and Development Program of Shaanxi Province, China (Grant. No. 2021LLRH-03), the Shanghai Engineering Research Center of Space Engine, China (Grant. No. 17DZ2280800), the Major Research Equipment Development Projects of Chinese Academy of Sciences, China (Grant. No. ZDKYYQ20220007), and the Key Deployment Project of Chinese Academy of Sciences, China (Grant. No. ZDRW-XH-2021-6)

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References

[1]	Michizono S, Saito Y, Fukuda S, Anami S, Hayashi K 1997 Vacuum 47 625 Google Scholar
[2]	Cummings K A, Risbud S H 2000 J. Phys. Chem. Solids 61 551 Google Scholar
[3]	宋佰鹏, 范壮壮, 苏国强, 穆海宝, 张冠军, 刘纯亮 2014 强激光与粒子束 26 271 Google Scholar Song B P, Fan Z Z, Su G Q, Mu H B, Zhang G J, Liu C L 2014 High Power Laser and Particle Beams 26 271 Google Scholar
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[20]	Wang D, He Y N, Cui W Z 2018 J. Appl. Phys. 124 053301 Google Scholar
[21]	Ladarola G 2014 Ph. D. Dissertation (Napoli: Università degli Studi di Napoli Federico II)
[22]	Fukuma H 2013 Ecloud’12: Joint Infn-Cern-Eucard-Accnet Workshop on Electron-Cloud Effects Isola d’Elba, Italy, June 5–9, 2013 pp27–30
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[26]	Ye M, Wang D, Li Y, He Y N, Cui W Z, Daneshmand M 2017 J. Appl. Phys. 121 074902 Google Scholar
[27]	Cai Y H, Wang D, Qi K C, He Y N 2022 Rev. Sci. Instrum. 93 055103 Google Scholar
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Cited By

图 1 氧化铝表面刻蚀图样　(a)方孔阵列微孔表面; (b)方孔刻蚀单元

Figure 1. Etching patterns on alumina surface: (a) Porous surface with square hole array; (b) etching cell of square hole.

DownLoad: Full-Size Img PowerPoint

图 2 同轴低通滤波器仿真模型

Figure 2. Simulation model of designed coaxial low pass filter.

DownLoad: Full-Size Img PowerPoint

图 3 四组氧化铝加载器件在不同输入功率下的电子数量变化过程仿真　(a) 第1组(δ_m = 4.3, E_pm = 500 eV); (b) 第2组(δ_m = 3.6, E_pm = 450 eV); (c) 第3组(δ_m = 2.5, E_pm = 400 eV); (d) 第4组(δ_m = 1.2, E_pm = 300 eV)

Figure 3. Simulated evolution of electron number for the four groups alumina-loaded devices with various input powers: (a) Group 1 (δ_m = 4.3, E_pm = 500 eV); (b) group 2 (δ_m = 3.6, E_pm = 450 eV); (c) group 3 (δ_m = 2.5, E_pm = 400 eV); (d) group 4 (δ_m = 1.2, E_pm = 300 eV).

DownLoad: Full-Size Img PowerPoint

图 4 激光刻蚀微结构氧化铝样品三维轮廓　(a)—(d) 样品#1—#4, 孔隙比例相似但深度不同; (d)—(g) 样品#4—#7, 深度相似但孔隙比例不同; (h)样品#8, 未经处理的原始氧化铝

Figure 4. 3D morphologies of laser-etched porous alumina samples: (a)–(d) Sample #1 to #4, similar porosity but different depths; (d)–(g) sample #4 to #7, similar depth but different porosity; (h) sample #8, untreated original alumina.

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图 5 表面微结构氧化铝样品SEY曲线　(a)样品#1—#4; (b)样品#4—#7

Figure 5. SEY curves of alumina samples with surface microstructure: (a) Samples #1 to #4; (b) samples #4 to #7.

DownLoad: Full-Size Img PowerPoint

图 6 样品TiN#1和TiN#3表征结构　(a), (d)表面形貌; (b), (e)截面图像; (c), (f)表面粗糙度

Figure 6. (a), (d) Surface morphology of Sample TiN#1 and TiN#3; (b), (e) cross-section images; (c), (f) surface roughness characterized

DownLoad: Full-Size Img PowerPoint

图 7 不同N₂∶Ar气体流量比下所制备TiN薄膜SEY曲线

Figure 7. SEY curves of TiN thin film fabricated under various gas flow ratio of N₂∶Ar.

DownLoad: Full-Size Img PowerPoint

图 8 表面镀覆TiN薄膜的微结构氧化铝样品SEY曲线　(a) 样品#1—#4; (b) 样品 #4—#7

Figure 8. SEY curves of microstructure alumina samples coated with TiN thin film: (a) Sample #1 to #4; (b) sample #4 to #7.

DownLoad: Full-Size Img PowerPoint

图 9 微结构氧化铝表面二次电子倍增抑制示意图　(a)单边倍增; (b)双边倍增

Figure 9. Schematic diagrams of suppressing multipactor for alumina surface by microstructures: (a) Unilateral multipactor; (b) bilateral multipactor.

DownLoad: Full-Size Img PowerPoint

图 10 高纯度氧化铝表面应用4种工艺后SEY曲线

Figure 10. SEY curves of highly purified alumina applied four treating technologies.

DownLoad: Full-Size Img PowerPoint

图 11 电子束辐照对表面电位V_S的影响

Figure 11. Effect of electron beam irradiation on the surface potential V_S.

DownLoad: Full-Size Img PowerPoint

表 1 器件加载不同SEY氧化铝微放电阈值仿真结果

Table 1. Simulated multipactor threshold of the alumina-loaded devices with various SEY.

参数	第1组	第2组	第3组	第4组
δ_m	4.3	3.6	2.5	1.2
微放电阈值/W	82.52	139.65	223.43	426.54

DownLoad: CSV

表 2 激光刻蚀微结构的特征参数测量结果

Table 2. Measured feature parameters of laser-etched microstructures.

参数	#1	#2	#3	#4	#5	#6	#7
实际微孔边长/μm	158	160	161	164	134	106	78
微孔平均深度/μm	34	112	198	257	264	259	272
实际孔隙比例/%	62.41	64.00	64.80	67.24	44.89	28.09	15.21

DownLoad: CSV

表 3 微结构氧化铝样品表面镀覆TiN薄膜前后SEY特征参数统计

Table 3. Feature parameters of SEY for microstructure alumina samples with/without TiN coated.

参数	#1	#2	#3	#4	#5	#6	#7	#8
镀TiNδ_m	1.87	1.28	1.09	0.79	1.07	1.49	1.75	1.87
镀TiN E_pm/eV	615	588	694	470	528	605	908	357
无镀层δ_m	2.12	1.75	1.39	1.10	1.50	1.70	2.09	2.46
Δδ_m	0.25	0.47	0.30	0.31	0.43	0.21	0.34	0.59

DownLoad: CSV

表 4 器件插入损耗和微放电阈值测试结果

Table 4. Measurement results of insertion loss and multipactor threshold for the fabricated devices.

插入损耗和微放电阈值	器件#1	器件#2	器件#3	器件#4
插入损耗/dB	0.17	0.18	0.24	0.24
插入损耗增量/dB	—	0.01	0.07	0.07
微放电阈值/W	125	375	425	650
微放电阈值提升幅度/dB	—	4.77	5.31	7.16

DownLoad: CSV

[1]	Michizono S, Saito Y, Fukuda S, Anami S, Hayashi K 1997 Vacuum 47 625 Google Scholar
[2]	Cummings K A, Risbud S H 2000 J. Phys. Chem. Solids 61 551 Google Scholar
[3]	宋佰鹏, 范壮壮, 苏国强, 穆海宝, 张冠军, 刘纯亮 2014 强激光与粒子束 26 271 Google Scholar Song B P, Fan Z Z, Su G Q, Mu H B, Zhang G J, Liu C L 2014 High Power Laser and Particle Beams 26 271 Google Scholar
[4]	Vague J, Melgarejo J C, Guglielmi M, Boria V E, Anza S, Vicente, C, Moreno M R, Taroncher M, Gimeno M B, Raboso D 2018 IEEE Trans. Microw. Theory Techn. 66 3644 Google Scholar
[5]	崔万照, 李韵, 张洪太 2019 航天器微波部件微放电分析及其应用 (北京: 北京理工大学出版社) 第5—7页 Cui W Z, Li Y, Zhang H T 2019 Simulation Method of Multipactor and Its Application in Satellite Microwave Components (Beijing: Beijing Institute of Technology Press) pp5–7 (in Chinese)
[6]	董烨, 刘庆想, 庞健, 周海京, 董志伟 2018 物理学报 67 037901 Google Scholar Dong Y, Liu Q X, Pang J, Zhou H J, Dong Z W 2018 Acta Phys. Sin. 67 037901 Google Scholar
[7]	Raboson D 2008 6th International Workshop on Multipactor Corona and Passive Intermodulation Valencia, Spain, September 24–27, 2008
[8]	胡天存, 曹猛, 鲍艳, 张永辉, 马建中, 崔万照 2017 中国空间科学技术 37 54 Google Scholar Hu T C, Cao M, Bao Y, Zhang Y H, Ma J Z, Cui W Z 2017 Chinese Space Science and Technology 37 54 Google Scholar
[9]	翟永贵, 王瑞, 王洪广, 林舒, 陈坤, 李永东 2018 物理学报 67 353 Google Scholar Zhai Y G, Wang R, Wang H G, Lin S, Chen K, Li Y D 2018 Acta Phy. Sin. 67 353 Google Scholar
[10]	张娜, 崔万照, 曹猛, 王瑞, 胡天存 2020 中国空间科学技术 40 1 Google Scholar Zhang N, Cui W Z, Cao M, Wang R, Hu T C 2020 Chinese Space Science and Technology 40 1 Google Scholar
[11]	李韵, 封国宝, 谢贵柏, 苗光辉, 李小军, 崔万照, 贺永宁 2022 强激光与粒子束 34 29 Google Scholar Li Y, Feng G B, Xie G B, Miao G H, Li X J, Cui W Z, He Y N 2022 High Power Laser and Particle Beams 34 29 Google Scholar
[12]	Vaughan J R M 1988 IEEE Trans. Electron. Dev. 35 1172 Google Scholar
[13]	Michizono S 2007 IEEE Trans. Dielectr. Electr. Insul. 14 583 Google Scholar
[14]	Song B P, Shen W W, Mu H B, Deng J B, Hao X W, Zhang G J 2013 IEEE Trans. Plasma. Sci. 41 2117 Google Scholar
[15]	雷杨俊, 肖定全, 唐兵华 2006 硅酸盐学报 34 713 Google Scholar Lei Y J, Xiao D Q, Tang B H 2006 J. Chin. Ceram. Soc. 34 713 Google Scholar
[16]	Suharyanto, Yamano Y, Kobayashi S, Michizono S, Saito Y 2006 IEEE Trans. Dielectr. Electr. Insul. 13 72 Google Scholar
[17]	Cazaux J 2010 Appl. Surf. Sci. 257 1002 Google Scholar
[18]	王丹, 叶鸣, 冯鹏, 贺永宁, 崔万照 2019 物理学报 68 067901 Google Scholar Wang D, Ye M, Feng P, He Y N, Cui W Z 2019 Acta Phys. Sin. 68 067901 Google Scholar
[19]	Gineste T, Belhaj M, Teyssedre G, Puech J 2015 Appl. Surf. Sci. 359 398 Google Scholar
[20]	Wang D, He Y N, Cui W Z 2018 J. Appl. Phys. 124 053301 Google Scholar
[21]	Ladarola G 2014 Ph. D. Dissertation (Napoli: Università degli Studi di Napoli Federico II)
[22]	Fukuma H 2013 Ecloud’12: Joint Infn-Cern-Eucard-Accnet Workshop on Electron-Cloud Effects Isola d’Elba, Italy, June 5–9, 2013 pp27–30
[23]	Rumolo G, Ruggiero F, Zimmermann F 2001 Phys. Rev. Spec. Top-Ac 4 012801 Google Scholar
[24]	张洪涛, 董海义, 杨奇 2014 真空 51 61 Google Scholar Zhang H T, Dong H Y, Yang Q 2014 Vacuum 51 61 Google Scholar
[25]	Michizono S, Kinbara A, Saito Y, Yamaguchi S, Anami S, Matuda N 1992 J. Vac. Sci. Technol. A 10 1180 Google Scholar
[26]	Ye M, Wang D, Li Y, He Y N, Cui W Z, Daneshmand M 2017 J. Appl. Phys. 121 074902 Google Scholar
[27]	Cai Y H, Wang D, Qi K C, He Y N 2022 Rev. Sci. Instrum. 93 055103 Google Scholar
[28]	Wang D, He Y N, Ye M, Peng W B, Cui W Z 2017 J. Appl. Phys. 122 153302 Google Scholar
[29]	Braga D, Poumellec B, Cannas V, Blaise G, Ren Y, Kristensen M 2004 J. Appl. Phys. 96 885 Google Scholar

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