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原子层沉积氧化铝已经成为应用于钝化发射极和背面点接触(PERC) 型晶硅太阳能电池优异的钝化材料. 对于基于丝网印刷技术的太阳能电池, 钝化材料的钝化效果及其热稳定性是非常重要的. 本文在太阳能级硅片上用热原子层沉积设备制备了20 nm和30 nm的氧化铝, 少子寿命测试结果显示初始沉积的氧化铝薄膜具有一定的钝化效果, 在退火后可达到100 μs以上, 相当于硅表面复合速度小于100 cm/s. 经过制备传统晶硅太阳能电池的烧结炉后, 少子寿命能够保持在烧结前的一半以上, 可应用于工业PERC型电池的制备. 通过电子显微镜观察到了较厚的氧化铝薄膜有气泡, 解释了30 nm氧化铝比20 nm氧化铝钝化性能和稳定性更差的异常表现.Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.
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Keywords:
- surface passivation /
- thermal atomic layer deposition /
- Al2O3 /
- c-Si solar cell
[1] Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 042112
[2] Hoex B, Schmidt J, Bock R, Altermatt P P, van de Sanden M C M, Kessels W M M 2007 Appl. Phys. Lett. 91 112107
[3] Hoex B, Schmidt J, Pohl P, van de Sanden M C M, Kessels W M M 2008 J. of Appl. Phys. 104 044903
[4] Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Phys. Status Solidi (RRL) 4 10
[5] Saint Cast P, Benick J, Kania D, Weiss L, Hofmann M, Rentsch J, Preu R, Glunz W G 2010 Ieee Electron Device Lett. 31 695
[6] Benick J, Hoex B, van de Sande M C M, Kessels W M M, Schultz O, Glunz S W 2008 Appl. Phys. Lett. 92 253504
[7] Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[8] Sinton consulting, Inc, WCT-120 photoconductance lifetime tester, user manual
[9] Dingemans G, Van de Sanden M C M, Kessels W M M 2011 Phys. Status Solidi (RRL) 5 22
[10] Vermang B, Goverde H, Lorenz A, Uruena A, Vereecke G, Meersschaut J, Cornagliotti E, Rothschild A, John J, Poortmans J, Mertens R 2011 Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Washington, June 19-24, 2011
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[1] Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 042112
[2] Hoex B, Schmidt J, Bock R, Altermatt P P, van de Sanden M C M, Kessels W M M 2007 Appl. Phys. Lett. 91 112107
[3] Hoex B, Schmidt J, Pohl P, van de Sanden M C M, Kessels W M M 2008 J. of Appl. Phys. 104 044903
[4] Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Phys. Status Solidi (RRL) 4 10
[5] Saint Cast P, Benick J, Kania D, Weiss L, Hofmann M, Rentsch J, Preu R, Glunz W G 2010 Ieee Electron Device Lett. 31 695
[6] Benick J, Hoex B, van de Sande M C M, Kessels W M M, Schultz O, Glunz S W 2008 Appl. Phys. Lett. 92 253504
[7] Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[8] Sinton consulting, Inc, WCT-120 photoconductance lifetime tester, user manual
[9] Dingemans G, Van de Sanden M C M, Kessels W M M 2011 Phys. Status Solidi (RRL) 5 22
[10] Vermang B, Goverde H, Lorenz A, Uruena A, Vereecke G, Meersschaut J, Cornagliotti E, Rothschild A, John J, Poortmans J, Mertens R 2011 Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Washington, June 19-24, 2011
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