Passivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si

He Yue; Dou Ya-Nan; Ma Xiao-Guang; Chen Shao-Bin; Chu Jun-Hao

doi:10.7498/aps.61.248102

Abstract

Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.

Keywords:

Authors and contacts

1.
Suntech Power Co., Ltd., Shanghai 200114, China;
2.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Funds: Project supported by the National Natural Science Foundation of China (Nos. 60821092, U1037604), the Shanghai Rising-Star Program (Grants No. 11QB1406800), and the Innovation Project of Shanghai Institute of Technical Physics (No. Q-ZY-51).

References

[1]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 042112
[2]	Hoex B, Schmidt J, Bock R, Altermatt P P, van de Sanden M C M, Kessels W M M 2007 Appl. Phys. Lett. 91 112107
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Cited By

[1]	Hoex B, Heil S B S, Langereis E, van de Sanden M C M, Kessels W M M 2006 Appl. Phys. Lett. 89 042112
[2]	Hoex B, Schmidt J, Bock R, Altermatt P P, van de Sanden M C M, Kessels W M M 2007 Appl. Phys. Lett. 91 112107
[3]	Hoex B, Schmidt J, Pohl P, van de Sanden M C M, Kessels W M M 2008 J. of Appl. Phys. 104 044903
[4]	Dingemans G, Seguin R, Engelhart P, van de Sanden M C M, Kessels W M M 2010 Phys. Status Solidi (RRL) 4 10
[5]	Saint Cast P, Benick J, Kania D, Weiss L, Hofmann M, Rentsch J, Preu R, Glunz W G 2010 Ieee Electron Device Lett. 31 695
[6]	Benick J, Hoex B, van de Sande M C M, Kessels W M M, Schultz O, Glunz S W 2008 Appl. Phys. Lett. 92 253504
[7]	Poodt P, Lankhorst A, Roozeboom F, Spee K, Maas D, Vermeer A 2010 Adv. Mater. 22 3564
[8]	Sinton consulting, Inc, WCT-120 photoconductance lifetime tester, user manual
[9]	Dingemans G, Van de Sanden M C M, Kessels W M M 2011 Phys. Status Solidi (RRL) 5 22
[10]	Vermang B, Goverde H, Lorenz A, Uruena A, Vereecke G, Meersschaut J, Cornagliotti E, Rothschild A, John J, Poortmans J, Mertens R 2011 Proceedings of the 37th IEEE Photovoltaic Specialists Conference, Washington, June 19-24, 2011

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Catalog

Vol. 61, Issue 24 - 2012-12-20

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