Ga2O3-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO2 inserting layer

Dong Dian-Meng; Wang Cheng; Zhang Qing-Yi; Zhang Tao; Yang Yong-Tao; Xia Han-Chi; Wang Yue-Hui; Wu Zhen-Ping

doi:10.7498/aps.72.20222222

Abstract

Solar-blind photodetector (PD) converts 200–280 nm ultraviolet (UV) light into electrical signals, thereby expanding application range from security communication to missile or fire alarms detections. As an emerging ultra-wide bandgap semiconductor, gallium oxide (Ga₂O₃) has sprung to the forefront of solar blind detection activity due to its key attributes, including suitable optical bandgap, convenient growth procedure, highly temperture/chemical/radiation tolerance, and thus becoming a promising candidate to break the current bottleneck of photomultiplier tubes. The Ga₂O₃-based solar blind PDs based on various architectures have been realized in the past decade, including photoconductive PDs, Schottky barrier PDs, and avalanche PDs. Till now, the metal-semiconductor-metal (MSM) structure has been widely used in developing photoconductive Ga₂O₃ solar-blind PDs because of its simple preparation method and large light collection area. Unfortunately, despite unremitting efforts, the performance metric of reported MSM-type Ga₂O₃ solar-blind PDs still lags behind the benchmark of commercial PMTs. Apparently, lack of solution to the problem has greatly hindered further research and practical applications in this field. One effective strategy for further enhancing the device performance such as detectivity, external quantum efficiency (EQE), and light-to-dark ratio heavily relies on blocking the dark current. In this work, high-quality single crystalline β-Ga₂O₃ with a uniform thickness of 700 nm is grown by using a metal organic chemical vapor deposition (MOCVD) technique. Then atomic layer deposition (ALD) fabricated ultrathin hafnium oxide (HfO₂) films ( $ \sim $10 nm) are introduced as inserted insulators and passivation layers. The 30 nm/100 nm Ti/Au interdigital electrodes (length: 2800 μm, width: 200 μm, spacing: 200 μm, 4 pairs) are fabricated by sputtering on the top of the film as the Ohmic contacts. Taking advantage of its novel dielectric and insulating properties, the leakage current on Ga₂O₃ thin film can be effectively inhibited by the inserted ultrathin HfO₂ layer, and thus further improving the performance of PDs. Compared with simple MSM structured Ga₂O₃ PD, the resulting metal-insulator-semiconductor (MIS) device significantly reduces dark current, and thus improving specific detectivity, enhancing light-to-dark current ratio, and increasing response speed. These findings advance a significant step toward the suppressing of dark current in MSM structured photoconductive PDs and provide great opportunities for developing high-performance weak UV signal sensing in the future.

Keywords:

Authors and contacts

Laboratory of Information Functional Materials and Devices, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

Corresponding author: Wang Yue-Hui, yuehuiwang@bupt.edu.cn ; Wu Zhen-Ping, zhenpingwu@bupt.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12074044) and the Open Fund of State Key Laboratory of Information Photonics and Optical Communications, China (Grant No. IPOC2021ZT05).

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References

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Cited By

图 1 光电探测器结构示意图　(a) MSM结构S1; (b) MIS结构S2; (c) MIS-Passivation结构S3

Figure 1. Schematic diagrams of the photodetector structure: (a) MSM structure S1; (b) MIS structure S2; (c) MIS-passivation structure S3.

DownLoad: Full-Size Img PowerPoint

图 2 Al₂O₃衬底上异质外延的β-Ga₂O₃薄膜的XRD谱图

Figure 2. XRD patterns of epitaxial growth of β-Ga₂O₃ film on Al₂O₃ substrate.

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图 3 所制备薄膜的紫外-可见吸收谱图　(a) 不同薄膜的光学吸收特性曲线; (b) (αhν)²与hν关系曲线

Figure 3. UV-vis absorbance spectrum: (a) Optical absorption characteristics curves of different thin films; (b) the relationship of (αhν)² and hν.

DownLoad: Full-Size Img PowerPoint

图 4 在黑暗和254 nm紫外光照条件下, 不同结构β-Ga₂O₃紫外光电探测器的I-V特性曲线(对数坐标)(插图为引入氧化铪后器件等效电路图)

Figure 4. I-V curves (logarithmic coordinate) of different devices with and without 254 nm UV light irradiation (Inset is the equivalent circuit of the device after the insertion of HfO₂).

DownLoad: Full-Size Img PowerPoint

图 5 三个器件的光谱响应

Figure 5. Spectral response of three devices.

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图 6 (a) 50 V偏压下, 光电流与入射光功率强度的对应关系; (b) 1000 μW/cm²的254 nm紫外光照射下, 线性动态范围与外部偏置电压的对应关系

Figure 6. (a) Relationship of photocurrent and light intensity at 50 V bias; (b) linear dynamic range vs. external bias voltage under 254 nm light illumination with an intensity of 1000 μW/cm².

DownLoad: Full-Size Img PowerPoint

图 7 在50 V偏置电压下, 三种不同结构器件的性能参数　(a) PDCR, (b) R, (c) EQE和(d) D*随入射光强的变化曲线

Figure 7. (a) PDCR and (b) R and (c) EQE and (d) D* of the photodetectors replying on the light intensity under 50 V bias voltage.

DownLoad: Full-Size Img PowerPoint

图 8 入射光强固定在500 μW/cm², 三种不同结构器件的性能参数(a) PDCR, (b) R, (c) EQE和(d) D*随偏置电压的变化

Figure 8. (a) PDCR, (b) R, (c) EQE, and (d) D* of the photodetector varies with the bias voltage under 500 μW/cm² illumination.

DownLoad: Full-Size Img PowerPoint

图 9 (a)三种不同结构器件S1, S2, S3在20 V偏压下对254 nm紫外光的光响应I-t特征曲线; (b) S1, (c) S2和(d) S3器件上升及下降沿I-t拟合曲线

Figure 9. (a) Photoresponse of three different structural devices (S1, S2, and S3) under 254 nm light at a 20 V bias; Rise and decay I-t fitting curves of (b) S1, (c) S2, and (d) S3 photodetectors.

DownLoad: Full-Size Img PowerPoint

图 10 光电探测器在外加偏置电压下的能带结构及载流子转移过程　(a) 黑暗条件下的MSM结构探测器; (b) 254 nm紫外光照下的MSM结构探测器; (c) 黑暗条件下的MIS结构探测器; (d) 254 nm紫外光照下的MIS结构探测器. (e) 钝化前β-Ga₂O₃薄膜表面状态示意图; (f) 钝化后β-Ga₂O₃薄膜表面状态示意图

Figure 10. Band structures and carriers transfer processes of photodetectors under applied bias voltage: (a) MSM photodetector in the dark; (b) MSM photodetector under 254 nm light; (c) MIS photodetector in the dark; (d) MIS photodetector under 254 nm light. The schematic diagrams in (e) and (f) show the surface states of a β-Ga₂O₃ film before and after passivation, respectively.

DownLoad: Full-Size Img PowerPoint

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Ga₂O₃-based metal-insulator-semiconductor solar-blind ultraviolet photodetector with HfO₂ inserting layer