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The performance of gallium oxide (Ga2O3) thin film detector based on metal-semiconductor-metal (MSM) is highly dependent on the uniformity of the Ga2O3 thin film, and the manufacturing process is quite sophisticated, which poses a challenge for the scale-up and mass production of thin film photodetectors. In this work, an MSM Ga2O3 thin film solar-blind photodetector with five-finger interdigital electrodes is fabricated by physically depositing Ga2O3 thin film on the surface of a mass-produced cantilevered thin film chip. Through the microelectromechanical system (MEMS) process, the cantilever electrode structure is prepared, which protects the internal circuit and the integrity of the thin film. The Ga2O3 thin film treated by argon plasma at a low temperature is amorphous, but the photodetector still possesses considerable ultraviolet detection performance. At a bias voltage of 18 V, it approaches the detection performance of crystalline Ga2O3 thin film, with a detectivity of 7.9×1010 Jones, an external quantum efficiency of 1779%, rise time and decay time of 1.22 s and 0.24 s, respectively. Moreover, a system of arc detection is built in outdoor environments. Without any optical focusing system, this photodetector achieves sensitive detection of pulsed arc in an outdoor sunlight environments. For pulsed arcs with an output voltage of 100 kV, the photodetector is capable of sensitive detection at a distance of 25 cm. Besides, the maximum detection distance of 155 cm indicates that the photodetector will have a favorable potential application value in the field of solar-blind detection. This work develops a sensitive functional thin film deposition technology based on the cantilever electrode structure fabricated by the MEMS process, which avoids the influence of the large-area uniformity of the functional thin film on the etching circuit. It provides a new technical approach and process route for preparing MSM photodetectors.
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Keywords:
- gallium oxide /
- solar-blind photodetector /
- arc detection
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图 1 Ga2O3薄膜的(a) XRD图谱、(b) SEM图像、(c) EDS图谱、(d) XPS能谱、(e) Ga 2p能谱、(f) AFM图谱和(g) 光吸收曲线; 图(g)插图显示了$ (\alpha h\nu {)}^{2} $与$ h\nu $的光学带隙图.
Figure 1. (a) XRD pattern, (b) SEM image, (c) EDS pattern, (d) XPS energy spectrum, (e) Ga 2p spectrum, (f) AFM pattern, (g) optical absorption curve of Ga2O3 thin film. The inset in panel (g) shows the curve of $ (\alpha h\nu {)}^{2} $ versus $ h\nu $ for the determination of the optical band gap of Ga2O3 thin film.
图 2 (a) Ga2O3薄膜探测器的实物照片; (b) 悬臂式薄膜芯片的结构示意图; (c) 图(b)红色框中的叉指电极SEM图像; (d) 图(b)红色框中叉指电极的详细结构示意图
Figure 2. (a) Physical photograph of Ga2O3 thin film-based photodetector; (b) schematic of the structure of the cantilevered thin film chip; (c) the SEM image of interdigital electrodes in the red box in panel (b); (d) the detailed schematic structure of interdigital electrodes in the red box in panel (b).
图 3 Ga2O3薄膜探测器 (a) 在黑暗和254 nm光照下的I-V曲线; (b) 254 nm和365 nm光照下的动态响应曲线; (c) 在18 V偏压下不同光照强度的动态响应曲线; (d) 光电流与光强的关系; (e) 上升/下降曲线; (f) 数十个操作周期切换
Figure 3. Ga2O3 thin film detector: (a) I-V curves of the photodetector in the dark and under 254 nm illumination; (b) I-t curves operated at 254 nm and 365 nm illumination (2.08 mW/cm2); (c) I-t curves of the photodetector under different light intensities of 254 nm with a bias voltage of 18 V; (d) photocurrent versus light intensity; (e) rise/decay curves; (f) over tens of operation cycles.
图 4 (a) 户外电弧检测系统; 电弧与探测器距离(b) 25 cm, (c) 155 cm, (d) 165 cm的响应曲线
Figure 4. (a) Outdoor arc detection system; response curves for the arc to detector distances of (b) 25 cm, (c) 155 cm and (d) 165 cm.
表 1 MSM型Ga2O3薄膜光电探测器的光响应参数比较
Table 1. Comparison of photoresponse parameters of MSM type photodetectors based on Ga2O3 thin film.
制备方法 偏压/V 暗电流/nA PDCR R/(A·W–1) D*/Jones EQE/% $ {\tau }_{{\mathrm{r}}}/ $s $ {\tau }_{{\mathrm{d}}} $/s Ref. MOCVD、磁控溅射 10 0.17 3.5$ \times $103 9.4 1.17$ \times $1012 4.6$ \times $103 27 3.93 [28] 离子切割、光刻工艺 10 0.0287 953 0.13 — — 2.96/34.17 1.94/32.64 [38] 脉冲激光沉积、磁控溅射 –15 12.4 — 29.08 2.16$ \times $1011 1.4$ \times $104 0.41/0.52 1.06/1.68 [33] 卤化物气相外延、
真空沉积和光刻工艺10 10–2 — 7$ \times $104 1.12$ \times $1018 3.79$ \times $105 — — [39] MOCVD、磁控溅射 5 $ < $10–3 1.1$ \times $106 0.046 3.4$ \times $1013 22.4 0.96 0.19 [40] MOCVD、光刻和离子束溅射 10 1.9$ \times $10–3 8.97$ \times $107 634.15 5.93$ \times $1011 3.1$ \times $105 — — [41] MEMS工艺、磁控溅射 18 1.3 130 0.364 7.9$ \times $1010 1779 1.22 0.24 This work 
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[1] Xie C, Lu X T, Tong X W, Zhang Z X, Liang F X, Liang L, Luo L B, Wu Y C 2019 Adv. Funct. Mater. 29 1806006
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