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β-Ga2O3-based deep-ultraviolet photodetector (PD) has versatile civil and military applications especially due to its inherent solar-blindness. In this work, pristine and N-doped β-Ga2O3 thin films are prepared on c-plane sapphire substrates by radio frequency magnetron sputtering. The influences of N impurity on the micromorphology, structural and optical properties of β-Ga2O3 film are investigated in detail by scanning electron microscopy, X-ray diffraction, and Raman spectra. The introduction of N impurities not only degrades the crystal quality of β-Ga2O3 films, but also affects the surface roughness. The β-Ga2O3 films doped with N undergoes a transition from a direct optical band gap to an indirect optical band gap. Then, the resulting metal-semiconductor-metal (MSM) PD is constructed. Comparing with the pure β-Ga2O3-based photodetector, the introduction of N impurities can effectively depress dark current and improve response speed of the β-Ga2O3 device. The N-doped β-Ga2O3-based photodetector achieves a dark current of 1.08 × 10–11 A and a fast response speed (rise time of 40 ms and decay time of 8 ms), which can be attributed to the decrease of oxygen vacancy related defects. This study demonstrates that the acceptor doping provides a new opportunity for producing ultraviolet photodetectors with fast response for further practical applications.
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Keywords:
- β-Ga2O3 films /
- N-doped /
- deep-ultraviolet photodetectors /
- fast response
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图 1 N掺杂β-Ga2O3薄膜的表面形貌和晶体结构 (a)—(d) SEM图; (e) XRD图谱; (f) Raman光谱
Figure 1. Surface morphology and crystal structure of N-doped β-Ga2O3 films: (a)−(d) SEM; (e) XRD; (f) Raman spectra.
图 2 (a)不同浓度N掺杂β-Ga2O3薄膜的透射光谱; (b), (c) 在直接和间接带隙下利用Tauc公式外推光学带隙图
Figure 2. (a) Transmission spectra of β-Ga2O3 films doped with different N concentrations; (b), (c) Tauc plots for samples under assumptions of an indirect bandgap and a direct bandgap.
图 3 (a)不同浓度N掺杂β-Ga2O3薄膜的室温光致发光谱; (b)局部放大图 (350−500 nm)
Figure 3. (a) Room temperature PL spectra of N-doped β-Ga2O3 films; (b) local enlarged view ranging from 350 to 500 nm.
图 4 β-Ga2O3薄膜MSM型日盲紫外器件的光电特性 (a), (b) I-V特性曲线; (c), (d) 瞬态光响应特性曲线(偏压为10 V); (e), (f) 光响应时间拟合曲线
Figure 4. Photoresponse performance of the β-Ga2O3 film MSM photodetectors: (a), (b) I-V curves of the MSM photodetector; (c), (d) transient light response characteristic curve under the bias voltage of 10 V; (e), (f) exponential fitting of a single cycle at 10 V illuminated with 254 nm light.
图 5 在254 nm光照下MSM型光电探测器的光响应能带示意图 (a)—(c)器件A; (d)—(f)器件C
Figure 5. Schematic energy band diagrams of MSM photodetector of samples A and C under 254 nm light illumination: (a)−(c) device A; (d)−(f) device C.
表 1 不同N掺杂浓度β-Ga2O3薄膜的(–201)衍射峰和201.4 cm–1拉曼特征峰的半高宽
Table 1. Full width at half maximum (FWHM) of XRD diffraction peak and Raman peak.
Sample FWHM of (–201) peak/(°) FWHM of 201.4 cm–1
peak/cm–1A 0.38 2.6 B 0.51 3.08 C 0.39 2.9 D 0.58 3.14 
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表 2 国内外Ga2O3薄膜基光电探测器的主要性能指标对比
Table 2. Comparison of the representative photoresponse metrics based on Ga2O3 film photodetectors.
Samples Growth Idark/nA τr/s τd/s Ref. β-Ga2O3 Sputtering 0.11 (10 V) 0.31/1.52 0.05/0.91 [9] β-Ga2O3 MOCVD 34 (10 V) 7.30 8.05 [40] β-Ga2O3 PLD ~1.2 0.59/2.4 0.15/1.6 [41] a-Ga2O3 Sputtering 0.3386 (10 V) 0.41/2.04 0.02/0.35 [42] Ga2O3:Zn Sputtering 45 (10 V) 17.2/1.23 4.03/46.10 [38] Ga2O3:Zn MOCVD 23 (30 V) 3.2 1.4 [43] Ga2O3:N CVD ~0.1 (5 V) 0.01 0.01 [24] Ga2O3:Mg Sputtering 0.0041 (10 V) 0.33/8.84 0.02 [34] Ga2O3:Ce PLD — 0.87/10.81 0.54/13.98 [32] α/β-Ga2O3 Sol–gel 0.125 (15 V) 0.04/0.87 0.02/1.00 [44] β-Ga2O3 Sputtering 0.56 (10 V) 0.51/3.04 0.07/0.08 This work Ga2O3:N Sputtering 0.0108 (10 V) 0.04/2.38 0.008/0.29 This work
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