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The deep-ultraviolet (DUV) photodetectors (PDs) have important applications in lots of fields. Thus, developing self-powered DUV PDs and excavating the inherent mechanism seem seriously crucial to achieving further actual applications. The construction of heterojunction can lead to many desired characteristics in optoelectronic devices. In the field of DUV photodetection, Ga2O3 has been a popular subject for constructing DUV PDs. So, it is necessary to develop self-powered Ga2O3-based DUV PDs through fabricating its heterogeneous structure. Therefore, in this work, the Ga2O3/Al0.1Ga0.9N heterojunction DUV PD is fabricated and discussed, which can achieve 254 and 365 nm DUV light photodetection. At positive voltages and negative voltages, the heterojunction PD can operate in a photoconductive mode or a depletion mode, respectively. In view of the PD performance, it displays decent dark current and DUV photoresponses. At voltage of 5 and –5 V, under 254 nm DUV light illumination, the photoresponsivity (R) is 2.09 and 66.32 mA/W, respectively, while under 365 nm DUV light illumination, R is 0.22 and 34.75 mA/W, respectively. In addition, under the built-in electric field (Ebuilt-in), R is 0.13 and 0.01 mA/W for 254 nm and 365 nm DUV light illumination, respectively. In all, the fabricated heterojunction PD displays promising prospects in the coming next-generation semiconductor photodetection technology. The results in this work indicate the potential of Ga2O3/Al0.1Ga0.9N heterojunction with high performance DUV photodetection. Furthermore, except for the characterizations of the materials and photodetector, in the end of this paper, the operating mechanism of the dual-band dual-mode heterojunction PD is analyzed through its heterogeneous energy-band diagram. It is concluded that the illustrated dual-band dual-mode Ga2O3/Al0.1Ga0.9N heterojunction can be sensitive to UVA waveband and UVC waveband in the electromagnetic spectrum, extending its photodetection region. And, the dual-mode (photoconductive mode and depletion mode) photodetection indicates two kinds of carrier transports in one PD, which can be attributed to the successful construction of the N-N tomo-type Ga2O3/Al0.1Ga0.9N heterojunction.
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Keywords:
- heterojunction /
- deep-ultraviolet detection /
- dual-band /
- dual-mode
[1] Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493
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图 5 (a) 正向偏压下、(b) 反向偏压下254 nm波长光辐照下的I-t特性曲线; (c) 正向偏压下、(d) 反向偏压下365 nm波长光辐照下的I-t特性曲线
Figure 5. The I-t curves at (a) positive voltages and (b) negative voltages under the illuminations of 254 nm UV light. The I-t curvesat (c) positive voltages and (d) negative voltages under the illuminations of 365 nm UV light
图 6 254 nm波长紫外光辐照下, 施加 (a) 正向偏压与 (b) 负偏压下的光电流与光强的关系图. 365 nm波长紫外光辐照下, 施加 (c) 正向偏压与 (d) 负偏压下的光电流与光强的关系图
Figure 6. The intensity dependent photocurrent at (a) positive voltages and (b) negative voltages under illumination of 254 nm UV light. The intensity dependent photocurrent at (c) positive voltages and (d) negative voltages under illumination of 365 nm UV light.
表 1 双波段、双模式Ga2O3/Al0.1Ga0.9N异质结光电探测器的性能总结
Table 1. Summary on the performance of the dual-band, dual-mode heterojunction photodetector.
波长254 nm 波长365 nm 偏压/V R /(mA·W–1) D*/Jones EQE /% R /(mA·W–1) D*/Jones EQE/% –5 2.09 1.60 $ \times $ 1011 1.01 0.22 1.69 $ \times $ 1010 0.075 –4 2.02 1.80 $ \times $ 1011 0.97 0.16 1.44 $ \times $ 1010 0.055 –3 1.17 1.92 $ \times $ 1011 0.84 0.13 1.39 $ \times $ 1010 0.044 –2 1.49 3.00 $ \times $ 1011 0.72 0.10 2.02 $ \times $ 1010 0.034 –1 1.16 1.52 $ \times $ 1011 0.66 0.07 9.53 $ \times $ 109 0.025 0 0.13 9.37 $ \times $ 109 0.06 0.01 6.18 $ \times $ 108 0.003 1 8.47 4.48 $ \times $ 1011 4.07 0.88 4.68 $ \times $ 1010 0.300 2 19.28 7.92 $ \times $ 1012 9.25 2.08 8.54 $ \times $ 1010 0.707 3 33.81 1.06 $ \times $ 1012 16.23 5.32 1.66 $ \times $ 1011 1.808 4 49.62 1.25 $ \times $ 1012 23.98 14.24 3.56 $ \times $ 1011 4.841 5 66.32 1.41 $ \times $ 1012 31.84 34.75 7.42 $ \times $ 1011 11.815 -
[1] Chen H, Liu K, Hu L, Al-Ghamdi A A, Fang X 2015 Mater. Today 18 493
Google Scholar
[2] Shi L, Nihtianov S 2012 IEEE Sensors J. 12 2453
Google Scholar
[3] Monroy E, Omnes F, Calle F 2003 Semicond. Sci. Technol. 18 R33
Google Scholar
[4] Pearton S J, Yang J, Cary IV P H, Ren F, Kim J, Tadjer M J, Mastro M A 2018 Appl. Phys. Rev. 5 011301
Google Scholar
[5] Chen X, Ren F, Gu S, Ye J 2019 Photonics Res. 7 381
Google Scholar
[6] Higashiwaki M 2021 Phys. Status Solidi RRL 15 2100357
Google Scholar
[7] 刘增, 李磊, 支钰崧, 都灵, 方君鹏, 李山, 余建刚, 张茂林, 杨莉莉, 张少辉, 郭宇锋, 唐为华 2022 物理学报 71 208501
Google Scholar
Liu Z, Li L, Zhi Y S, Du L, Fang J P, Li S, Yu J G, Zhang M L, Yang L L, Zhang S H, Guo Y F, Tang W H 2022 Acta Phys. Sin. 71 208501
Google Scholar
[8] Xu J, Zheng W, Huang F 2019 J. Mater. Chem. C 7 8753
Google Scholar
[9] Qian L, Li W, Gu Z, Tian J, Huang X, Lai P T, Zhang W 2022 Adv. Opt. Mater. 10 2102055
Google Scholar
[10] Liu Z, Wang X, Liu Y, Guo D, Li S, Yan Z, Tan C, Li W, Li P, Tang W 2019 J. Mater. Chem. C 7 13920
Google Scholar
[11] Liu Z, Du L, Zhang S, Li L, Xi Z, Tang J, Fang J, Zhang M, Yang L, Li S, Li P, Guo Y, Tang W 2022 IEEE Trans. Electron Devices 69 5595
Google Scholar
[12] Liu Z, Zhi Y, Zhang M, Yang L, Li S, Yan Z, Zhang S, Guo D, Li P, Guo Y, Tang W 2022 Chin. Phys. B 31 088503
Google Scholar
[13] Kroemer H 1963 Proc. IEEE 51 1782
Google Scholar
[14] Robertson J 2000 J. Vac. Sci. Technol., B 18 1785
Google Scholar
[15] Liu Z, Liu Y, Wang X, Li W, Zhi Y, Wang X, Li P, Tang W 2019 J. Appl. Phys. 126 045707
Google Scholar
[16] Chen Y, Yang X, Zhang C, He G, Chen X, Qiao Q, Zang J, Dou W, Sun P, Deng Y, Dong L, Shan C 2022 Nano Lett. 22 4888
Google Scholar
[17] Liu Z, Zhang S, Zhi Y, Li S, Yan Z, Chu X, Bian A, Li P, Tang W 2021 J. Phys. D: Appl. Phys. 54 195104
Google Scholar
[18] Qi X, Yue J, Ji X, Liu Z, Li S, Yan Z, Zhang M, Yang L, Li P, Guo D, Guo Y, Tang W 2022 Thin Solid Films 757 139397
Google Scholar
[19] Zheng Z, Wang W, Wu F, Wang Z, Shan M, Zhao Y, Liu W, Jian P, Dai J, Lu H, Chen C 2022 Opt. Express 30 21822
Google Scholar
[20] Gao A, Jiang W, Ma G, Liu Z, Li S, Yan Z, Sun W, Zhang S, Tang W 2022 Curr. Appl. Phys. 33 20
Google Scholar
[21] Ma G, Jiang W, Sun W, Yan Z, Sun B, Li S, Zhang M, Wang X, Gao A, Dai J, Liu Z, Li P, Tang W 2021 Phys. Scr. 96 125823
Google Scholar
[22] Sun W, Sun B, Li S, Ma G, Gao A, Jiang W, Zhang M, Li P, Liu Z, Tang W 2022 Chin. Phys. B 31 024205
Google Scholar
[23] Nakagomi S, Sato T, Takahashi Y, Kokubun Y 2015 Sens. Actuators, A 232 208
Google Scholar
[24] Weng W Y, Hsueh T J, Chang S J, Huang G J, Hsueh H T 2011 IEEE Sensors J. 11 1491
Google Scholar
[25] 王兰喜, 陈学康, 王瑞, 曹生珠 2009 真空与低温 15 5
Google Scholar
Wang L X, Chen X K, Wang D, Cao S Z 2009 Vac. Cryogenics 15 5
Google Scholar
[26] Razeghi M, Rogalski A 1996 J. Appl. Phys. 79 7433
Google Scholar
[27] Tung R T 2014 Appl. Phys. Rev. 1 011304
Google Scholar
[28] Liu Z, Zhi Y, Li S, Liu Y, Tang X, Yan Z, Li P, Li X, Guo D, Wu Z, Tang W 2020 J. Phys. D: Appl. Phys. 53 085105
Google Scholar
[29] Li S, Guo D, Li P, Wang X, Wang Y, Yan Z, Liu Z, Zhi Y, Huang Y, Wu Z, Tang W 2019 ACS Appl. Mater. Interfaces 11 35105
Google Scholar
[30] Liu Z, Li S, Yan Z, Liu Y, Zhi Y, Wang X, Wu Z, Li P, Tang W 2020 J. Mater. Chem. C 8 5071
Google Scholar
[31] Xu X, Chen J, Cai S, Long Z, Zhang Y, Su L, He S, Tang C, Liu P, Peng H, Fang X 2018 Adv. Mater. 30 1803165
Google Scholar
[32] Garrido J A, Monroy E, Izpura I, Muñoz E 1998 Semicond. Sci. Technol. 13 563
Google Scholar
[33] Grabowski S P, Schneider M, Nienhaus H, Mönch W, Dimitrov R, Ambacher O, Stutzmann M 2001 Appl. Phys. Lett. 78 2503
Google Scholar
[34] Ma J, Zheng M, Chen C, Zhu Z, Zheng X, Chen Z, Guo Y, Liu C, Yan Y, Fang G 2018 Adv. Funct. Mater. 28 1804128
Google Scholar
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