Effect of MoO<sub>3</sub>-overlayer on MoS<sub>2</sub>-based photovoltaic photodetector performance

Wang Wan-Yu; Shi Kai-Xi; Li Jin-Hua; Chu Xue-Ying; Fang Xuan; Kuang Shang-Qi; Xu Guo-Hua

doi:10.7498/aps.72.20230464

Abstract

Photovoltaic device based on van der Waals heterojunction provides an effective way to develop high-performance, low-power consumption, ultra-integrated micro photodetection system. In this paper, we construct an asymmetric Au/MoS₂ Schottky junction to realize a planar MoS₂-based photovoltaic device. In order to further improve the photoelectric performance of the device, we design a structure covering MoO₃ on the surface of MoS₂ to construct the heterojunction. Owing to the absorption properties of MoO₃ in visible light and the excellent light transmittance of the ultra-thin two-dimensional structure, the electrons involved in conducting in MoS₂ material are increased. In most of previous reports, the preparation methods and performance improvement of MoS₂/MoO₃ heterojunctions were the focus of research, but little attention was paid to exploring the influence of overlayer on devices. Therefore, in this work, we investigate the influence of overlayer thickness on device performance. With the help of atomic layer deposition (ALD) method to control the film thickness, each of the MoO₃ materials with thickness of 4 nm, 12 nm and 20 nm (deposition periods of 10, 30 and 50, respectively) is covered on the surface of a MoS₂-based photodetector. The photoelectric performance enhancement effects of three groups of heterojunction photodetectors are compared with each other. The results show that the thinner the MoO₃ layer, the more significant the enhancement effect of heterojunction photodetectors is. This is mainly attributed to the fact that ultra-thin MoO₃ layer not only has visible light absorption, but also reduces the influence of the covering layer on the light absorption of MoS₂, thus achieving a heterojunction system with high light absorption efficiency. In addition, the interfacial electric field of the heterojunction effectively promotes the separation of photogenerated carriers, and the thinner the MoO₃ coating layer, the weaker the effect of introducing the interfacial defects of the heterojunction is. Therefore, the dark current gain effect of the device is effectively suppressed, which is beneficial to improving the response speed and optical detectivity of the device. Comparing with pure MoS₂ photovoltaic photodetectors, the photoresponsivity of MoS₂/MoO₃ heterojunction device in this paper is enhanced nearly 10 times. The device exhibits a high photoresponse of ~916.121 A/W, a detectivity of ~2.74×10¹¹ Jones, and a fast response time of ~73 μs, showing that this design can effectively solve the low-responsiveness problem of planar photovoltaic device. In this study, for the first time, we construct a planar photovoltaic device based on MoS₂/MoO₃. By designing heterostructure and optimizing the thickness of the overlayer, the photoelectric performance of planar MoS₂-based photovoltaic device is successfully improved, which provides a reference scheme for developing high-performance heterojunction photodetectors of MoS₂/oxide materials in future.

Keywords:

Authors and contacts

1.
School of Physics, Changchun University of Science and Technology, Changchun 130022, China
2.
State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

Corresponding author: Shi Kai-Xi, shikaixi@cust.edu.cn ; Li Jin-Hua, lijh@cust.edu.cn ;

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62174015), the Project of Science and Technology Department of Jilin Province, China (Grant No. YDZJ202301ZYTS488), the Project of Education Department of Jilin Province, China (Grant Nos. JJKH20210798KJ, JJKH20230795KJ), the“111” Project of China (Grant No. D17017), and the International Science and Technology Cooperation Project of Jilin Province, China (Grant No. 20190701029GH).

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References

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[25]	Wang Y, Du X, Wang J M, Su M Z, Wan X, Meng H, Xie W G, Xu J B, Liu P Y 2017 ACS Appl. Mater. Interfaces 9 5543 Google Scholar
[26]	Seguin L, Figlarz M, Cavagnat R, Lasskgues J C 1995 Spectrochim. Acta A Mol. Biomol. Spectrosc. 51 1323 Google Scholar
[27]	Demirtas M, Odacı C, Shehu Y, Perkgöz N K, Ay F 2020 Mater. Sci. Semicon. Proc. 108 104880 Google Scholar
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[31]	Choi Y, Kim Y, Jung E, Oh M, Kim H 2014 J. Korean Phys. Soc. 64 1535 Google Scholar
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[33]	Zhang Z G 2010 Chin. Phys. B 19 127802 Google Scholar
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Cited By

图 1 (a) MoS₂/MoO₃光伏型光电探测器的光学形貌图, 插图为器件模型图; (b) MoS₂/MoO₃异质结的Raman光谱, 插图为MoS₂薄膜的Raman光谱

Figure 1. (a) Optical morphology diagram of MoS₂/MoO₃ photovoltaic photodetector, the inset shows model diagram; (b) Raman spectra of MoS₂/MoO₃ heterojunction, the inset shows Raman spectra of MoS₂ film.

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图 2 (a)—(c)3组MoS₂光电探测器在532 nm激光辐照下的I-V曲线, 图(a)中插图为灰色箭头指示处的I-V曲线放大视图; (d)—(f) 分别在图(a)—(c)中样品表面沉积10, 30, 50个周期MoO₃后的MoS₂/MoO₃光电探测器的I-V曲线

Figure 2. (a)–(c) I-V curves of three MoS₂ photodetectors, the laser incident at 532 nm, the inset shows an enlarged view of I-V curve at the gray arrow; (d)–(f) the I-V curves of MoS₂/MoO₃ photodetectors after 10, 30, and 50 cycles of MoO₃ were deposited on the sample surface in Fig. (a)–(c), respectively.

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图 3 覆盖层不同厚度的MoS₂/MoO₃光电探测器　(a)性能对比; (b) 响应度对比; (c) 探测率对比; (d) 光电性能增强倍数对比

Figure 3. (a) Performance comparison; (b) responsivity comparison; (c) detectivity comparison; (d) performance enhancement ratio comparison of MoS₂/MoO₃ photodetectors with different thickness of the overlayer.

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图 4 (a) 光伏性能测试系统示意图; (b)光辐照下器件Au/MoS₂肖特基结能带图; (c), (d) MoS₂光电探测器和MoS₂/MoO₃光电探测器在不同激光功率密度下的光伏曲线; (e), (f) 不同功率密度下, MoS₂复合MoO₃前后(e)光伏数据对比和(f)器件响应时间对比

Figure 4. (a) The testing process of photovoltaic performance; (b) band diagram of Au/MoS₂ electrodes asymmetrical contact under illumination; (c), (d) photovoltaic curves of MoS₂ and MoS₂/MoO₃ photodetectors at different laser power densities; (e), (f) photovoltaic performance and photoresponse times comparison of MoS₂ and MoS₂/MoO₃ photodetectors under different power densities.

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图 5 (a) MoO₃的吸收; (b) MoO₃的带隙, 红线是提取带隙的辅助线; (c) MoS₂与MoO₃构成异质结前的能带图; (d) MoS₂与MoO₃@10 cycles构成异质结后的能带变化图, 其中红色小球代表光生电子, 绿色小球代表光生空穴, 蓝色箭头代表异质结内建电场的方向, 灰色箭头代表载流子的移动方向; (e) MoS₂复合MoO₃前后的Raman和PL光谱对比

Figure 5. (a) The absorption of the MoO₃; (b) the bandgap of the MoO₃, the red line is an auxiliary line for extracting bandgap; (c) band diagram of MoS₂ and MoO₃ before heterojunction formed; (d) band diagram of MoS₂ and MoO₃ after heterojunction formed. Red balls represent photoelectrons, green balls represent light holes, blue arrows represent the direction of the built electric field within the heterojunction and gray arrows represent the direction of the carrier movement; (e) Raman and PL spectra of MoS₂ in individual and heterostructures.

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表 1 本文器件与其他MoS₂/MoO₃基光电器件的性能与MoO₃制备方法比较

Table 1. Comparison of MoS₂/MoO₃ photodetectors performance and MoO₃ preparation.

材料	光伏器件	MoO₃制备方法	响应时间/μs	探测率/Jones	响应度/(A·W^–1)	文献
MoS₂/MoO₃	Yes	ALD	73	2.74×10¹¹	916.121	本工作
MoS₂/MoO_X	No	热蒸发	3.52×10⁶	—	65.2	[4]
MoS₂/MoO₃/Graphene	Yes	电子束蒸发	10²	4.77×10¹⁰	0.67	[18]
MoS₂/MoO_{_X}	No	化学氧化	9×10⁵	—	3.6×10^–3	[19]
MoS₂/MoO₃/p-Si	Yes	自然氧化	6×10⁵	2.8×10¹¹	0.16	[21]
MoS₂/α-MoO_X	No	CVD	95	9.8×10¹⁶	10⁵	[22]
MoS₂/MoO_X	No	CVD	9.8×10⁶	2.08×10¹¹	1.09	[39]
MoS₂/MoO₃	No	化学剥离	1.75×10⁷	—	0.134×10^–3	[40]
MoO₃@MoS₂/p-Si	Yes	化学沉淀	—	5.813×10¹⁰	9.23×10^–3	[41]

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[1]	Lu J T, Zheng Z Q, Yao J D, Gao W, Xiao Y, Zhang M L, Li J B 2020 Nanoscale 12 7196 Google Scholar
[2]	Wang J, Han J Y, Chen X Q, Wang X R 2019 InfoMat 1 33 Google Scholar
[3]	Liu B S, Zhang X K, Du J L, Xiao J K, Yu H H, Hong M Y, Gao L, Ou Y, Kang Z, Liao Q L, Zhang Z, Zhang Y 2022 InfoMat 4 12282 Google Scholar
[4]	Yoo G, Hong S, Heo J, Kim S 2017 Appl. Phys. Lett. 110 053112 Google Scholar
[5]	Zhang H, Wang Z H, Chen J W, Tan C Y, Yin S Q, Zhang H L, Wang S T, Qin Q G, Li L 2022 Nanoscale 14 16130 Google Scholar
[6]	Wang Z H, Zhang H, Wang W K, Tan C Y, Chen J W, Yin S Q, Zhang H L, Zhu A K, Li G, Du Y C, Wang S T, Liu F G, Li L 2022 ACS Appl. Mater. Interfaces 14 37926 Google Scholar
[7]	Zhou C J, Raju S, Li B, Chan M, Chai Y, Yang C Y 2018 Adv. Funct. Mater. 28 1802954 Google Scholar
[8]	Zhao Y D, Xiao X Y, Huo Y J, Wang Y C, Zhang T F, Jiang K L, Wang J P, Fan S S, Li Q Q 2017 ACS Appl. Mater. Interfaces 9 18945 Google Scholar
[9]	Kang Z, Cheng Y F, Zheng Z, Cheng F, Chen Z Y, Li L Y, Tan X Y, Xiong L, Zhai T Y, Gao Y J 2019 Nano-Micro Lett. 11 34 Google Scholar
[10]	Tang X Q, Wang S, Liang Y, Bai D W, Xu J Y, Wang Y Y, Chen C Y, Liu X, Wu S M, Wen Y, Jiang D Y, Zhang Z H 2022 Phys. Chem. Chem. Phys. 24 7323 Google Scholar
[11]	Shi K X, Li J H, Xiao Y C, Guo L, Chu X Y, Zhai Y J, Zhang B L, Lu D X, Rosei F 2020 ACS Appl. Mater. Interfaces 12 31382 Google Scholar
[12]	Du P, Fang X, Zhao H B, Fang D, Wang D B, Gong Q, Kou X F, Liu X L, Wang X H 2020 J. Alloys Compd. 847 156390 Google Scholar
[13]	Zhang B W, Fang D, Fang X, Zhao H B, Wang D K, Li J H, Wang X H, Wang D B 2022 Rare Met. 41 982 Google Scholar
[14]	Du P, Fang X, Gong Q, Li J M, Kou X F, Zhao H B, Wang X H 2019 Phys. Status Solidi RRL 13 1900474 Google Scholar
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[17]	Shan J J, Li J H, Chu X Y, Xu M Z, Jin F J 2018 IOP Conf. Ser. Mater. Sci. Eng. 382 022070 Google Scholar
[18]	Zhang R J, Ma X L, An C H, Zhang D H, Sun D, Hu X D, Liu J 2019 2 D Mater. 6 035033 Google Scholar
[19]	毕开西, 万强, 舒志文, 邵功磊, 靳媛媛, 朱梦剑, 林均, 刘华伟, 刘怀志, 陈艺勤, 刘松, 段辉高 2020 中国科学-材料 63 1076 Google Scholar Bi K X, Wan Q, Shu Z W, Shao G L, Jin Y Y, Zhu M J, Lin J, Liu H W, Liu H Z, Chen Y Q, Liu S, Duan H G 2020 Sci. China Mater. 63 1076 Google Scholar
[20]	Guo Y X, Kang L X, Song P, Zeng Q S, Tang B J, Yang J F, Wu Y, Tian D, Xu M Z, Zhao W, Qi X F, Zhang Z Y, Liu Z 2021 2D Mater. 8 035036 Google Scholar
[21]	Pala S, Mukherjee S, Nand M, Srivastava H, Mukherjee C, Jha S N, Ray S K 2020 App. Surf. Sci. 502 144196 Google Scholar
[22]	Feng S, Liu C, Zhu Q B, Su X, Qian W W, Sun Y, Wang C X, Li B, Chen M L, Chen L, Chen W, Zhang L L, Zhen C, Wang F J, Ren W C, Yin L C, Wang X M, Cheng H M, Sun D M 2021 Nat. Commun. 12 4094 Google Scholar
[23]	Liu X X, Li F, Xu M X, Shen T, Yang Z L, Fan W L, Qi J J 2018 Langmuir 34 14151 Google Scholar
[24]	Nalwa H S 2020 RSC Adv. 10 30529 Google Scholar
[25]	Wang Y, Du X, Wang J M, Su M Z, Wan X, Meng H, Xie W G, Xu J B, Liu P Y 2017 ACS Appl. Mater. Interfaces 9 5543 Google Scholar
[26]	Seguin L, Figlarz M, Cavagnat R, Lasskgues J C 1995 Spectrochim. Acta A Mol. Biomol. Spectrosc. 51 1323 Google Scholar
[27]	Demirtas M, Odacı C, Shehu Y, Perkgöz N K, Ay F 2020 Mater. Sci. Semicon. Proc. 108 104880 Google Scholar
[28]	Xu H Y, Akbari M K, Hai Z Y, Wei Z H, Hyde L, Verpoort F, Xue C Y, Zhuiykov S 2018 Mater. Design 149 135 Google Scholar
[29]	Dai T J, Ren Y X, Qian L X, Liu X Z 2018 J. Electron. Mater. 47 6709 Google Scholar
[30]	Choi J H, Lee S W, Kim H B, Ahn J H 2020 Appl. Surf. Sci. 532 147462 Google Scholar
[31]	Choi Y, Kim Y, Jung E, Oh M, Kim H 2014 J. Korean Phys. Soc. 64 1535 Google Scholar
[32]	Rezeq M, Ali A, Patole S P, Eledlebi K, Dey R K, Cui B 2018 AIP Adv. 8 055122 Google Scholar
[33]	Zhang Z G 2010 Chin. Phys. B 19 127802 Google Scholar
[34]	Schulz P, Cowan S R, Guan Z L, Garcia A, Olson D C, Kahn A 2014 Adv. Funct. Mater. 24 701 Google Scholar
[35]	Yu Y L, Shen T, Long H R, Zhong M Z, Xin K Y, Zhou ZQ, Wang X Y, Liu Y Y, Wakabayashi H, Liu L Y, Yang J H, Wei Z M, Deng H X 2022 Adv. Mater. 34 2206486 Google Scholar
[36]	Zhang W J, Chuu C P, Huang J K, Chen C H, Tsai M L, Chang Y H, Liang C T, Chen Y Z, Chueh Y L, He J H, Chou M Y, Li L J 2014 Sci. Rep. 4 3826 Google Scholar
[37]	Lin J D, Han C, Wang F, Wang R, Xiang D, Qing S, Zhang X A, Wang L, Zhang H, Wee A T S, Chen W 2014 ACS Nano 8 5323 Google Scholar
[38]	Zhang K N, Zhang T N, Cheng G H, Li T X, Wang S X, Wei W, Zhou X H, Yu W W, Sun Y, Wang P, Zhang D, Zeng C G, Wang X J, Hu W D, Fan H J, Shen G Z, Chen X, Duan X F, Chang K, Dai N 2016 ACS Nano 10 3852 Google Scholar
[39]	Im H, Liu N, Bala A, Kim S, Choi W 2019 APL Mater. 7 061101 Google Scholar
[40]	Wei Y F, Tran V T, Zhao C Y, Liu H F, Kong J H, Du H J 2019 ACS Appl. Mater. Interfaces 11 21445 Google Scholar
[41]	Gunasekaran S, Marnadu R, Thangaraju D, Chandrasekaran J, Hegazy H H, Somaily H H, Durairajan A, Valente M A, Elango M, Reddy V R M 2021 Mater. Sci. Semicon. Proc. 135 106097 Google Scholar

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Vol. 72, Issue 14 - 2023-07-20

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Effect of MoO₃-overlayer on MoS₂-based photovoltaic photodetector performance

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Corresponding author: Shi Kai-Xi, shikaixi@cust.edu.cn ; Li Jin-Hua, lijh@cust.edu.cn ;

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Effect of MoO3-overlayer on MoS2-based photovoltaic photodetector performance

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Effect of MoO₃-overlayer on MoS₂-based photovoltaic photodetector performance